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Paper detail

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

preprint2016arXivOpen access
Cui-Zu ChangJinsong ZhangXiao FengJie ShenZuocheng ZhangMinghua GuoKang LiYunbo OuPang WeiLi-Li WangZhong-Qing JiYang FengShuaihua JiXi ChenJinfeng JiaXi DaiZhong FangShou-Cheng ZhangKe HeYayu WangLi LuXu-Cun MaQi-Kun Xu
cond-mat.mes-hall
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Open access23 authors1 topic
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Cui-Zu ChangJinsong ZhangXiao FengJie ShenZuocheng ZhangMinghua GuoKang LiYunbo OuPang WeiLi-Li WangZhong-Qing JiYang FengShuaihua JiXi ChenJinfeng JiaXi DaiZhong FangShou-Cheng ZhangKe HeYayu WangLi LuXu-Cun MaQi-Kun Xu

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