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Yayu Wang

Yayu Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.mes-hallcond-mat.other

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Published work

44 published item(s)

preprint2025arXiv

Tailoring Neel orders in Layered Topological Antiferromagnets

In the two-dimensional limit, the interplay between Neel order and band topology in van der Waals topological antiferromagnets can give rise to novel quantum phenomena in the quantum anomalous Hall state, including the cascaded quantum phase transition and spin-modulation effect. However, due to the absence of net magnetization in antiferromagnets, probing the energetically degenerate Neel orders has long remained a significant challenge. Inspired by recent advances in realizing the quantum anomalous Hall effect in AlOx-capped layered topological antiferromagnet MnBi2Te4, we demonstrate deterministic control over the Neel order through surface anisotropy engineering enabled by the AlOx capping layer. By tuning the surface anisotropy, we uncover paritydependent symmetry breaking states that manifest as distinct odd-even boundary architectures, including 180 degree domain walls or continuous spin structures. Comparative studies between AlOx-capped and pristine odd-layer MnBi2Te4 flakes using domain-resolved magnetic force microscopy reveal pronounced differences in coercivity and magnetization-reversal dynamics. Notably, an unconventional giant exchange bias, which arises from perpendicular magnetic anisotropy rather than traditional interface pinning mechanisms, is observed for the first time. Our findings establish a pathway for manipulating Neel order through surface modification in A-type antiferromagnets, offering new opportunities for spintronic devices and quantum information technologies.

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preprint2022arXiv

Influences of the dissipative topological edge state on quantized transport in MnBi2Te4

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.

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preprint2021arXiv

Ambi-chiral anomalous Hall effect in magnetically doped topological insulators

The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomenological model to explain the evolution of magnetic order and anomalous Hall effect chirality in magnetically doped topological insulators.

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preprint2021arXiv

Evolution of Charge and Pair Density Modulations in Overdoped Bi2Sr2CuO6+delta

One of the central issues concerning the mechanism of high temperature superconductivity in cuprates is the nature of the ubiquitous charge order and its implications to superconductivity. Here we use scanning tunneling microscopy to investigate the evolution of charge order from the optimally doped to strongly overdoped Bi2Sr2CuO6+δ cuprates. We find that with increasing hole concentration, the long-range checkerboard order gradually evolves into short-range glassy patterns consisting of diluted charge puddles. Each charge puddle has a unidirectional nematic internal structure, and exhibits clear pair density modulations as revealed by the spatial variations of superconducting coherence peak and gap depth. Both the charge puddles and the nematicity vanish completely in the strongly overdoped non-superconducting regime, when another type of short-range order with root2 * root2 periodicity emerges. These results shed important new lights on the intricate interplay between the intertwined orders and the superconducting phase of cuprates.

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preprint2021arXiv

Particle-hole asymmetric superconducting coherence peaks in overdoped cuprates

To elucidate the superconductor to metal transition at the end of superconducting dome, the overdoped regime has stepped onto the center stage of cuprate research recently. Here, we use scanning tunneling microscopy to investigate the atomic-scale electronic structure of overdoped trilayer Bi-2223 and bilayer Bi-2212 cuprates. At low energies the spectroscopic maps are well described by dispersive quasiparticle interference patterns. However, as the bias increases to the superconducting coherence peak energy, a virtually non-dispersive pattern with sqrt(2)*sqrt(2) periodicity emerges. Remarkably, the position of the coherence peaks exhibits evident particle-hole asymmetry which also modulates with the same period. We propose that this is an extreme quasiparticle interference phenomenon, caused by pairing-breaking scattering between flat anti-nodal Bogoliubov bands, which is ultimately responsible for the superconductor to metal transition.

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preprint2020arXiv

Electronic states and magnetic response of MnBi2Te4 by scanning tunneling microscopy and spectroscopy

Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers of MnBi2Te4, respectively. The measured band structures exhibit intriguing and complex properties. Here we employ low-temperature scanning tunneling microscopy to study its surface states and magnetic response. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 is different from that of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure presumably related to the modification of crystalline structure during sample cleaving and re-orientation of magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The ratio of Mn/Bi substitutions is 5%. The electronic structures are fluctuating at atomic scale on the surface, which can affect the magnetism of MnBi2Te4. Our findings shed new lights on the magnetic property of MnBi2Te4 and thus the design of magnetic topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect, which was realized in magnetically doped topological insulators (TIs) in the absence of magnetic field. Recently, the layered van der Waals compound MnBi2Te4 has been theoretically predicted and experimentally verified to be a TI with interlayer antiferromagnetic (AFM) order. It is a rare stoichiometric material with coexisting topology and magnetism, thus represents a perfect building block for complex topological-magnetic structures. Here we investigate the quantum transport behaviors of both bulk crystal and exfoliated MnBi2Te4 flakes in a field effect transistor geometry. In the 6 septuple layers (SLs) device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristic of the axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic field range, and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2 (h is the Plank constant and e is the elemental charge). These results pave the road for using even-number-SL MnBi2Te4 to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems.

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preprint2019arXiv

Effect of structural supermodulation on superconductivity in tri-layer cuprate Bi2Sr2Ca2Cu3O10+x

We investigate the spatial and doping evolutions of the superconducting properties of tri-layer cuprate Bi2Sr2Ca2Cu3O10+x by using scanning tunneling microscopy and spectroscopy. Both the superconducting coherence peak and gap size exhibit periodic variations with the structural supermodulation, but the effect is much more pronounced in the underdoped regime than at optimal doping. Moreover, a new type of tunneling spectrum characterized by two superconducting gaps emerges with increasing doping, and the two-gap features also correlate with the supermodulation. We propose that the interaction between the inequivalent outer and inner CuO2 planes is responsible for these novel features that are unique to tri-layer cuprates.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

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preprint2015arXiv

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3(111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2-xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2-xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of the zero Hall plateau in a quantum anomalous Hall insulator

Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has been discovered experimentally in an ultrathin film of the Bi2Te3 family TI with spontaneous ferromagnetic (FM) order. An important question concerning the QAH state is whether it is simply a zero-magnetic-field version of the quantum Hall (QH) effect, or if there is new physics beyond the conventional paradigm. Here we report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a QAH insulator caused by magnetization reversal. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity, consistent with a recent theoretical prediction. The features of the zero Hall plateau are shown to be closely related to that of the QAH effect, but its temperature evolution exhibits quantitative differences from the network model for conventional QH plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a QAH insulator, are responsible for the zero Hall plateau. The rich magnetic domain dynamics makes the QAH effect a distinctive class of quantum phenomenon that may find novel applications in spintronics.

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preprint2015arXiv

Onset of the Meissner effect at 65 K in FeSe thin film grown on Nb doped SrTiO3 substrate

We report the Meissner effect studies on an FeSe thin film grown on Nb doped SrTiO3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screening at 65 K, which is consistent with the gap opening temperature determined by previous angle resolved photoemission spectroscopy results. The applied magnetic field causes a broadening of the superconducting transition near the onset temperature, which is the typical behavior for quasi-two-dimensional superconductors. Our results provide direct evidence that FeSe thin film grown on Nb doped SrTiO3 substrate has an onset TC ~ 65 K, which is the highest among all iron based superconductors discovered so far.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas

Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems. Significant progress has been made to achieve high mobility black phosphorus two-dimensional electron gas (2DEG) since the development of the first black phosphorus field-effect transistors (FETs)$^{1-4}$. Here, we reach a milestone in developing high quality black phosphorus 2DEG - the observation of integer quantum Hall (QH) effect. We achieve high quality by embedding the black phosphorus 2DEG in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DEG, and brings the carrier Hall mobility up to 6000 $cm^{2}V^{-1}s^{-1}$. The exceptional mobility enabled us, for the first time, to observe QH effect, and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

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preprint2015arXiv

Realization of Stable Ferromagnetic Order in Topological Insulator: Codoping Enhanced Magnetism in 4f Transition Metal Doped Bi2Se3

The realization of long range and insulating ferromagnetic states in topological insulator (TI) has been a pressing issue since its discovery. Only recently, such state was achieved in Cr-doped Bi2-xSbxTe3, leading to the discovery of quantum anomalous Hall effect (QAHE). However, the effect is only observed at extremely low temperatures mainly due to the limited magnetism. To fully understand the mechanism of the ferromagnetic ordering whereby improving the ferromagnetism, we investigated 4f transition metal-doped Bi2Se3, using density-functional-theory approaches. We found that Eu and Sm prefer the Bi substitutional sites with large magnetic moments to ensure stable long-range ferromagnetic states. Additionally, codoping can be a novel strategy to preserve the insulating property of the host material as well as improving the incorporation of magnetic dopants. Our findings thus offer the critical step in facilitating the realization of QAHE in TI systems.

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preprint2015arXiv

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

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preprint2015arXiv

Strong similarities between the local electronic structure of insulating iron pnictide and lightly doped cuprate

One of the major puzzles regarding unconventional superconductivity is how some of the most interesting superconductors are related to an insulating phase that lies in close proximity. Here we report scanning tunneling microscopy studies of the local electronic structure of Cu doped NaFeAs across the superconductor to insulator transition. We find that in the highly insulating regime the electronic spectrum develops an energy gap with diminishing density of state at the Fermi level. The overall lineshape and strong spatial variations of the spectra are strikingly similar to that of lightly doped cuprates close to the parent Mott insulator. We propose that the suppression of itinerant electron state and strong impurity potential induced by Cu dopants lead to this insulating iron pnictide.

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preprint2015arXiv

Structural phase transition and electronic structure evolution in Ir1-xPtxTe2 studied by scanning tunneling microscopy

The IrTe2 transition metal dichalcogenide undergoes a series of structural and electronic phase transitions when doped with Pt. The nature of each phase and the mechanism of the phase transitions have attracted much attention. In this paper, we report scanning tunneling microscopy and spectroscopy studies of Pt doped IrTe2 with varied Pt contents. In pure IrTe2, we find that the ground state has a 1/6 superstructure, and the electronic structure is inconsistent with Fermi surface nesting induced charge density wave order. Upon Pt doping, the crystal structure changes to a 1/5 superstructure and then to a quasi-periodic hexagonal phase. First principles calculations show that the superstructures and electronic structures are determined by the global chemical strain and local impurity states that can be tuned systematically by Pt doping.

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preprint2015arXiv

Thickness dependence of superconductivity and superconductor-insulator transition in ultrathin FeSe films on SrTiO3(001) substrate

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe film on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. Here, by ex situ transport measurements, we report on the superconductivity in FeSe ultra-thin films with different thickness on STO substrate. We find that the onset superconducting transition temperature (Tc) decreases with increasing film thickness of FeSe, which is opposite to the behavior usually observed in traditional superconductor films. By systematic post-annealing of 5 UC FeSe films, we observe an insulator to superconductor transition, which is accompanied with a sign change of the dominated charge carriers from holes to electrons at low temperatures according to the corresponding Hall measurement.

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preprint2014arXiv

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which however show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron doping level. Scanning tunneling microscopy and first principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in Bi2Se3 matrix, which contribute to the observed chemical potential dependent gap-opening in the Dirac surface states without long-range ferromagnetic order.

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preprint2014arXiv

Doping dependence of the anisotropic quasiparticle interference in NaFe1-xCoxAs iron-based superconductors

We use scanning tunneling microscopy to investigate the doping dependence of quasiparticle interference (QPI) in NaFe1-xCoxAs iron-based superconductors. The goal is to study the relation between nematic fluctuations and Cooper pairing. In the parent and underdoped compounds, where four-fold rotational symmetry is broken macroscopically, the QPI patterns reveal strong rotational anisotropy. At optimal doping, however, the QPI patterns are always four-fold symmetric. We argue this implies small nematic susceptibility and hence insignificant nematic fluctuation in optimally doped iron pnictides. Since Tc is the highest this suggests nematic fluctuation is not a prerequistite for strong Cooper pairing.

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preprint2014arXiv

Electrically tuned magnetic order and magnetoresistance in a topological insulator

The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic topological magnetoelectric effects. A particularly intriguing phenomenon in this case is the magnetic field dependence of electrical resistance, or magnetoresistance (MR). The intricate interplay between topological protection and broken-TRS may lead to highly unconventional MR behaviour that can find unique applications in magnetic sensing and data storage. However, so far the MR of TI with spontaneously broken TRS is still poorly understood, mainly due to the lack of well-controlled experiments. In this work, we investigate the magneto transport properties of a ferromagnetic TI thin film fabricated into a field effect transistor device. We observe an unusually complex evolution of MR when the Fermi level (EF) is tuned across the Dirac point (DP) by gate voltage. In particular, MR tends to be positive when EF lies close to the DP but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture for localization, but is intimately correlated with the gate-tuned magnetic order. We show that the underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative MR. The simultaneous electrical control of magnetic order and magneto transport facilitates future TI-based spintronic devices.

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preprint2014arXiv

Emergence of a coherent in-gap state in SmB6 Kondo insulator revealed by scanning tunneling spectroscopy

We use scanning tunneling microscopy to investigate the (001) surface of cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gap-like density of state suppression around the Fermi level, which is due to the hybridization between the itinerant Sm 5d band and localized Sm 4f band. At temperatures below 40 K, a sharp coherence peak emerges within the hybridization gap near the lower gap edge. We propose that the in-gap resonance state is due to a collective excitation in magnetic origin with the presence of spin-orbital coupling and mixed valence fluctuations. These results shed new lights on the electronic structure evolution and transport anomaly in SmB6.

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preprint2013arXiv

Adsorption site determination of a molecular monolayer via inelastic tunneling

We have combined scanning tunneling microscopy with inelastic electron tunneling spectroscopy (IETS) and density functional theory (DFT) to study a tetracyanoethylene monolayer on Ag(100). Images show that the molecules arrange in locally ordered patterns with three non-equivalent, but undeterminable, adsorption sites. While scanning tunneling spectroscopy only shows subtle variations of the local electronic structure at the three different positions, we find that vibrational modes are very sensitive to the local atomic environment. IETS detects sizeable mode frequency shifts of the molecules located at the three topographically detected sites, which permits us to determine the molecular adsorption sites through identification with DFT calculations.

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preprint2013arXiv

Direct observation of high temperature superconductivity in one-unit-cell FeSe films

Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of ~ 65 K. If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high TC superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films is challenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and a extremely large critical current density JC ~ 1.7*106 A/cm2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.

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preprint2013arXiv

New Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping

We report the discovery of a new diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess Lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism is mediated in semiconducting samples of relative low mobile carriers with a small coercive force, indicating an easy spin flip.

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preprint2013arXiv

Phase fluctuations versus Gaussian fluctuations in optimally-doped YBa$_2$Cu$_3$O$_7$

We analyze recent torque measurements of the magnetization $M_d$ vs. magnetic field $H$ in optimally doped YBa$_2$Cu$_3$O$_{7-y}$ (OPT YBCO) to argue against a recent proposal by Rey et al that the magnetization results above $T_c$ are consistent with Gaussian fluctuations. We find that, despite its strong interlayer coupling, OPT YBCO displays an anomalous non-monotonic dependence of $M_d$ on $H$ which represents direct evidence for the locking of the pair wavefunction phase $θ_n$ at $T_c$ and the subsequent unlocking by a relatively weak $H$. These unusual features characterize the unusual nature of the transition to the Meissner state in cuprate superconductors. They are absent in low-$T_c$ superconductors to our knowledge. We also stress the importance of the vortex liquid state, as well as the profiles of the melting field $H_m(T)$ and the upper critical field curve $H_{c2}(T)$ in the $T$-$H$ plane. Contrary to the claims of Rey et al, we show that the curves of the magnetization and the Nernst signal illustrate the inaccessibility of the $H_{c2}$ line near $T_c$. The prediction of the $H_{c2}$ line by Rey et al is shown to be invalid in OPT YBCO.

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preprint2012arXiv

Evolution from unconventional spin density wave to superconductivity and a novel gap-like phase in NaFe1-xCoxAs

Similar to the cuprate high TC superconductors, the iron pnictide superconductors also lie in close proximity to a magnetically ordered phase. A central debate concerning the superconducting mechanism is whether the local magnetic moments play an indispensable role or the itinerant electron description is sufficient. A key step for resolving this issue is to acquire a comprehensive picture regarding the nature of various phases and interactions in the iron compounds. Here we report the doping, temperature, and spatial evolutions of the electronic structure of NaFe1-xCoxAs studied by scanning tunneling microscopy. The spin density wave gap in the parent state is observed for the first time, which shows a strongly asymmetric lineshape that is incompatible with the conventional Fermi surface nesting scenario. The optimally doped sample exhibits a single, symmetric energy gap, but in the overdoped regime another asymmetric gap-like feature emerges near the Fermi level. This novel gap-like phase coexists with superconductivity in the ground state, persists deep into the normal state, and shows strong spatial variations. The characteristics of the three distinct low energy states, in conjunction with the peculiar high energy spectra, suggest that the coupling between the local moments and itinerant electrons is the fundamental driving force for the phases and phase transitions in the iron pnictides.

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preprint2012arXiv

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3

Searching for superconducting materials with high transition temperature (TC) is one of the most exciting and challenging fields in physics and materials science. Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with TC above 77 K, the liquid nitrogen boiling point. Here we report an interface engineering method for dramatically raising the TC of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

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preprint2012arXiv

Visualizing the atomic scale electronic structure of the Ca2CuO2Cl2 Mott insulator

Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier density is sufficiently high. The natural starting point for tackling high Tc superconductivity is to elucidate the electronic structure of the parent Mott insulator and the behavior of a single doped charge. Here we use a scanning tunneling microscope to investigate the atomic scale electronic structure of the Ca2CuO2Cl2 parent Mott insulator of the cuprates. The full electronic spectrum across the Mott-Hubbard gap is uncovered for the first time, which reveals the particle-hole symmetric and spatially uniform Hubbard bands. A single electron donated by surface defect is found to create a broad in-gap electronic state that is strongly localized in space with spatial characteristics intimately related to the AF spin background. The unprecedented real space electronic structure of the parent cuprate sheds important new light on the origion of high Tc superconductivity from the doped Mott insulator perspective.

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preprint2012arXiv

Visualizing the microscopic coexistence of spin density wave and superconductivity in underdoped NaFe1-xCoxAs

Although the origin of high temperature superconductivity in the iron pnictides is still under debate, it is widely believed that magnetic interactions or fluctuations play an important role in triggering Cooper pairing. Because of the relevance of magnetism to pairing, the question of whether long range spin magnetic order can coexist with superconductivity microscopically has attracted strong interests. The available experimental methods used to answer this question are either bulk probes or local ones without control of probing position, thus the answers range from mutual exclusion to homogeneous coexistence. To definitively answer this question, here we use scanning tunneling microscopy to investigate the local electronic structure of an underdoped NaFe1-xCoxAs near the spin density wave (SDW) and superconducting (SC) phase boundary. Spatially resolved spectroscopy directly reveal both the SDW and SC gap features at the same atomic location, providing compelling evidence for the microscopic coexistence of the two phases. The strengths of the SDW and SC features are shown to anti correlate with each other, indicating the competition of the two orders. The microscopic coexistence clearly indicates that Cooper pairing occurs when portions of the Fermi surface (FS) are already gapped by the SDW order. The regime TC < T < TSDW thus show a strong resemblance to the pseudogap phase of the cuprates where growing experimental evidences suggest a FS reconstruction due to certain density wave order. In this phase of the pnictides, the residual FS has a favorable topology for magnetically mediated pairing when the ordering moment of the SDW is small.

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preprint2011arXiv

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.

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preprint2011arXiv

Crossover between weak localization and weak antilocalization in magnetically doped topological insulator

Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities and the weak antilocalization (WAL) of Dirac fermions. Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects. Here we report transport studies on magnetically doped TI Cr-Bi2Se3. With increasing Cr concentration, the low temperature electrical conduction exhibits a characteristic crossover from WAL to weak localization (WL). In the heavily doped regime where WL dominates at the ground state, WAL reenters as temperature rises, but can be driven back to WL by strong magnetic field. These complex phenomena can be explained by a unified picture involving the evolution of Berry phase with the energy gap opened by magnetic impurities. This work demonstrates an effective way to manipulate the topological transport properties of the TI surface states by TRS-breaking perturbations.

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preprint2011arXiv

Imaging the coexistence of superconductivity and a charge density modulation in K0.73Fe1.67Se2 superconductor

We report scanning tunneling microscopy studies of the local structural and electronic properties of the iron selenide superconductor K0.73Fe1.67Se2 with TC = 32K. On the atomically resolved FeSe surface, we observe well-defined superconducting gap and the microscopic coexistence of a charge density modulation with root2*root2 periodicity with respect to the original Se lattice. We propose that a possible origin of the pattern is the electronic superstructure caused by the block antiferromagnetic ordering of the iron moments. The widely expected iron vacancy ordering is not observed, indicating that it is not a necessary ingredient for superconductivity in the intercalated iron selenides.

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preprint2010arXiv

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

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preprint2010arXiv

Landau Quantization of Massless Dirac Fermions in Topological Insulator

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.

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preprint2010arXiv

Quasiparticle interference of C2-symmetric surface states in LaOFeAs parent compound

We present scanning tunneling microscopy studies of the LaOFeAs parent compound of iron pnictide superconductors. Topographic imaging reveals two types of atomically flat surfaces, corresponding to the exposed LaO layer and FeAs layer respectively. On one type of surface, we observe strong standing wave patterns induced by quasiparticle interference of two-dimensional surface states. The distribution of scattering wavevectors exhibits pronounced two-fold symmetry, consistent with the nematic electronic structure found in the Ca(Fe1-xCox)2As2 parent state.

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preprint2009arXiv

Diamagnetism and Cooper pairing above $T_c$ in cuprates

In the cuprate superconductors, Nernst and torque magnetization experiments have provided evidence that the disappearance of the Meissner effect at $T_c$ is caused by the loss of long-range phase coherence, rather than the vanishing of the pair condensate. Here we report a series of torque magnetization measurements on single crystals of $\mathrm{La_{2-x}Sr_xCuO_4}$ (LSCO), $\mathrm{Bi_2Sr_{2-y}La_yCuO_6}$ (Bi 2201), $\mathrm{Bi_2Sr_2CaCu_2O_{8+δ}}$ (Bi 2212) and optimal $\mathrm{YBa_2Cu_3O_7}$. Some of the measurements were taken to fields as high as 45 T. Focusing on the magnetization above $T_c$, we show that the diamagnetic term $M_d$ appears at an onset temperature $T^M_{onset}$ high above $T_c$. We construct the phase diagram of both LSCO and Bi 2201 and show that $T^M_{onset}$ agrees with the onset temperature of the vortex Nernst signal $T^ν_{onset}$. Our results provide thermodynamic evidence against a recent proposal that the high-temperature Nernst signal in LSCO arises from a quasiparticle contribution in a charge-ordered state.

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preprint2009arXiv

Tuning Molecule-Mediated Spin Coupling in Bottom-Up Fabricated Vanadium-TCNE Nanostructures

We have fabricated hybrid magnetic complexes from V atoms and tetracyanoethylene (TCNE) ligands via atomic manipulation with a cryogenic scanning tunneling microscope. Using tunneling spectroscopy we observe spin-polarized molecular orbitals as well as Kondo behavior. For complexes having two V atoms, the Kondo behavior can be quenched for different molecular arrangements, even as the spin-polarized orbitals remain unchanged. This is explained by variable spin-spin (i.e., V-V) ferromagnetic coupling through a single TCNE molecule, as supported by density functional calculations.

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preprint2006arXiv

Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping

Research on the oxide perovskites has uncovered electronic properties that are strikingly enhanced compared with those in conventional metals. Examples are the high critical temperatures of the cuprate superconductors and the colossal magnetoresistance in the manganites. The conducting layered cobaltate $\rm Na_xCoO_2$ displays several interesting electronic phases as $x$ is varied including water-induced superconductivity and an insulating state that is destroyed by field. Initial measurements showed that, in the as-grown composition, $\rm Na_xCoO_2$ displays moderately large thermopower $S$ and conductivity $σ$. However, the prospects for thermoelectric cooling applications faded when the figure of merit $Z$ was found to be small at this composition (0.6$<x<$0.7). Here we report that, in the poorly-explored high-doping region $x>$0.75, $S$ undergoes an even steeper enhancement. At the critical doping $x_p\sim$ 0.85, $Z$ (at 80 K) reaches values $\sim$40 times larger than in the as-grown crystals. We discuss prospects for low-temperature thermoelectric applications.

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preprint2006arXiv

Magnetization, Nernst effect and vorticity in the cuprates

Nernst and magnetization experiments reveal the existence of a large region of the cuprate phase diagram above the $T_c$ curve in which vorticity and weak diamagnetism exist without phase coherence. We discuss the implication that the transition at $T_c$ is caused by the loss of long-range phase coherence caused by spontaneous vortex creation. Below $T_c$, these measurements provide an estimate of the depairing field $H_{c2}$ which is found to be very large (40-100 T depending on doping). We discuss the high-field Nernst and magnetization results, binding energy, and the phase diagram of hole-doped cuprates. Some new magnetization results on the vortex liquid in very underdoped LSCO in the limit $T\to 0$ are reported as well.

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preprint2005arXiv

Field-enhanced diamagnetism in intense magnetic field in the pseudogap state of the cuprate $\rm Bi_2Sr_2CaCu_2O_{8+δ}

In hole-doped cuprates, Nernst experiments imply that the superconducting state is destroyed by spontaneous creation of vortices which destroy phase coherence. Using torque magnetometry on $\rm Bi_2Sr_2CaCu_2O_{8+δ}$, we uncover a field-enhanced diamagnetic signal $M$ above the transition temperature $T_c$ that increases with applied field to 32 Tesla and scales just like the Nernst signal. The magnetization results above $T_c$ distinguish $M$ from conventional amplitude fluctuations, and strongly support the vortex scenario for the loss of phase coherence at $T_c$.

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preprint2005arXiv

Strongly nonlinear magnetization above $T_c$ in $\rm Bi_2Sr_2CaCu_2O_{8+δ}$

Using high-resolution magnetometry we have investigated in detail the magnetization $M$ above the critical temperature $T_c$ in $\rm Bi_2Sr_2CaCu_2O_{8+δ}$. In a broad range of temperature $T$ above $T_c$, we find that $M(T,H)$ is strongly non-linear in the field $H$. We show that as $T\to T_c$, the susceptibility $χ(T,H)$ diverges to very large values ($χ\to$ -1) if measured in weak $H$. In addition, $M(H)$ displays an anomalous non-analytic form $M\sim H^{1/δ}$ in weak fields with a strongly $T$-dependent exponent $δ(T)$. These features strongly support the proposal that, above $T_c$, the pair condensate survives to support significant London rigidity.

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