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Li-Li Wang

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Published work

10 published item(s)

preprint2025arXiv

Scalable Stellar Parameter Inference Using Python-based LASP: From CPU Optimization to GPU Acceleration

To enhance the efficiency, scalability, and cross-survey applicability of stellar parameter inference in large spectroscopic datasets, we present a modular, parallelized Python framework with automated error estimation, built on the LAMOST Atmospheric Parameter Pipeline (LASP) originally implemented in IDL. Rather than a direct code translation, this framework refactors LASP with two complementary modules: LASP-CurveFit, a new implementation of the LASP fitting procedure that runs on a CPU, preserving legacy logic while improving data I/O and multithreaded execution efficiency; and LASP-Adam-GPU, a GPU-accelerated method that introduces grouped optimization by constructing a joint residual function over multiple observed and model spectra, enabling high-throughput parameter inference across tens of millions of spectra. Applied to 10 million LAMOST spectra, the framework reduces runtime from 84 to 48 hr on the same CPU platform and to 7 hr on an NVIDIA A100 GPU, while producing results consistent with those from the original pipeline. The inferred errors agree well with the parameter variations from repeat observations of the same target (excluding radial velocities), while the official empirical errors used in LASP are more conservative. When applied to DESI DR1, our effective temperatures and surface gravities agree better with APOGEE than those from the DESI pipeline, particularly for cool giants, while the latter performs slightly better in radial velocity and metallicity. These results suggest that the framework delivers reliable accuracy, efficiency, and transferability, offering a practical approach to parameter inference in large spectroscopic surveys. The code and DESI-based catalog are available via \dataset[DOI: 10.12149/101679]{https://doi.org/10.12149/101679} and \dataset[DOI: 10.12149/101675]{https://doi.org/10.12149/101675}, respectively.

preprint2021arXiv

Stellar populations of galaxies in the LAMOST spectral survey

We firstly derive the stellar population properties: age and metallicity for $\sim$ 43,000 low redshift galaxies in the seventh data release (DR7) of the Large Sky Area Multi-Object Fiber Spectroscopic Telescope (LAMOST) survey, which have no spectroscopic observations in the Sloan Digital Sky Survey(SDSS). We employ a fitting procedure based on the small-scale features of galaxy spectra so as to avoid possible biases from the uncertain flux calibration of the LAMOST spectroscopy. We show that our algorithm can successfully recover the average age and metallicity of the stellar populations of galaxies down to signal-to-noise$\geq$5 through testing on both mock galaxies and real galaxies comprising LAMOST and their SDSS counterparts. We provide a catalogue of the age and metallicity for $\sim$ 43,000 LAMOST galaxies online. As a demonstration of the scientific application of this catalogue, we present the Holmberg effect on both age and metallicity of a sample of galaxies in galaxy pairs.

preprint2016arXiv

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

preprint2015arXiv

Automatic Incident Classification for Big Traffic Data by Adaptive Boosting SVM

Modern cities experience heavy traffic flows and congestions regularly across space and time. Monitoring traffic situations becomes an important challenge for the Traffic Control and Surveillance Systems (TCSS). In advanced TCSS, it is helpful to automatically detect and classify different traffic incidents such as severity of congestion, abnormal driving pattern, abrupt or illegal stop on road, etc. Although most TCSS are equipped with basic incident detection algorithms, they are however crude to be really useful as an automated tool for further classification. In literature, there is a lack of research for Automated Incident Classification (AIC). Therefore, a novel AIC method is proposed in this paper to tackle such challenges. In the proposed method, traffic signals are firstly extracted from captured videos and converted as spatial-temporal (ST) signals. Based on the characteristics of the ST signals, a set of realistic simulation data are generated to construct an extended big traffic database to cover a variety of traffic situations. Next, a Mean-Shift filter is introduced to suppress the effect of noise and extract significant features from the ST signals. The extracted features are then associated with various types of traffic data: one normal type (inliers) and multiple abnormal types (outliers). For the classification, an adaptive boosting classifier is trained to detect outliers in traffic data automatically. Further, a Support Vector Machine (SVM) based method is adopted to train the model for identifying the categories of outliers. In short, this hybrid approach is called an Adaptive Boosting Support Vector Machines (AB-SVM) method. Experimental results show that the proposed AB-SVM method achieves a satisfied result with more than 92% classification accuracy on average.

preprint2015arXiv

Band structure and charge doping effects of potassium-adsorbed FeSe/SrTiO3 system

We theoretically study, through combining the density functional theory and an unfolding technique, the electronic band structure and the charge doping effects for the deposition of potassium (K) on multilayer FeSe films grown on SrTiO3 (001) surface. These results form a theoretical base line for further detailed studies of low-temperature electronic properties and their multiway quantum engineering of FeSe thin films. We explain the Fermi surface topology observed in experiment and formulate the amount of doped electrons as a function of atomic K coverage. We show that the atomic K deposition efficiently dopes electrons to top layer FeSe. Both checkerboard and pair-checkerboard antiferromagnetic (AFM) FeSe layers show electron pockets at M point and no Fermi pocket at $Γ$ point with moderate atomic K coverage. The electron transfer from K adsorbate to FeSe film introduces a strong electric field, which leads to a double-Weyl cone structure at M point in the Brillouin zone of checkerboard-AFM FeSe. We demonstrate that with experimentally accessible heavy electron doping, an electron-like Fermi pocket will emerge at $Γ$ point, which should manifest itself in modulating the high-temperature superconductivity of FeSe thin films.

preprint2015arXiv

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

preprint2014arXiv

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which however show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron doping level. Scanning tunneling microscopy and first principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in Bi2Se3 matrix, which contribute to the observed chemical potential dependent gap-opening in the Dirac surface states without long-range ferromagnetic order.

preprint2011arXiv

Crossover between weak localization and weak antilocalization in magnetically doped topological insulator

Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities and the weak antilocalization (WAL) of Dirac fermions. Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects. Here we report transport studies on magnetically doped TI Cr-Bi2Se3. With increasing Cr concentration, the low temperature electrical conduction exhibits a characteristic crossover from WAL to weak localization (WL). In the heavily doped regime where WL dominates at the ground state, WAL reenters as temperature rises, but can be driven back to WL by strong magnetic field. These complex phenomena can be explained by a unified picture involving the evolution of Berry phase with the energy gap opened by magnetic impurities. This work demonstrates an effective way to manipulate the topological transport properties of the TI surface states by TRS-breaking perturbations.

preprint2010arXiv

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

preprint2010arXiv

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.