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Jinfeng Jia

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Published work

13 published item(s)

preprint2022arXiv

Catalytic growth of ultralong graphene nanoribbons on insulating substrates

Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.

preprint2022arXiv

Observation of magnetism induced topological edge state in antiferromagnetic topological insulator MnBi4Te7

Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN ~12.5 K, which is constituted of alternatively stacked magnetic layer (MnBi2Te4) and non-magnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at non-magnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN, the edge state vanishes, while the point defect induced state persists upon temperature increasing. These results confirm the observation of magnetism induced edge states. Our analysis based on an axion insulator theory reveals that the nontrivial topological nature of the observed edge state.

preprint2022arXiv

Quantum phase transition in magnetic nanographenes on a lead superconductor

Quantum spins, referred to the spin operator preserved by full SU(2) symmetry in the absence of the magnetic anistropy, have been proposed to host exotic interactions with superconductivity4. However, spin orbit coupling and crystal field splitting normally cause a significant magnetic anisotropy for d/f-shell spins on surfaces6,9, breaking SU(2) symmetry and fabricating the spins with Ising properties10. Recently, magnetic nanographenes have been proven to host intrinsic quantum magnetism due to their negligible spin orbital coupling and crystal field splitting. Here, we fabricate three atomically precise nanographenes with the same magnetic ground state of spin S=1/2 on Pb(111) through engineering sublattice imbalance in graphene honeycomb lattice. Scanning tunneling spectroscopy reveals the coexistence of magnetic bound states and Kondo screening in such hybridized system. Through engineering the magnetic exchange strength between the unpaired spin in nanographenes and cooper pairs, quantum phase transition from the singlet to the doublet state has been observed, in consistent with quantum models of spins on superconductors. Our work demonstrates delocalized graphene magnetism host highly tunable magnetic bound states with cooper pairs, which can be further developed to study the Majorana bound states and other rich quantum physics of low-dimensional quantum spins on superconductors.

preprint2022arXiv

Topological Defects Induced High-Spin Quartet State in Truxene-Based Molecular Graphenoids

Topological defects in graphene materials introduce exotic properties which are absent in their defect-free counterparts with both fundamental importance and technological implications. Although individual topological defects have been widely studied, collective magnetic behaviors originating from well-organized multiple topological defects remain a great challenge. Here, we studied the collective magnetic properties originating from three pentagon topological defects in truxene-based molecular graphenoids by using scanning tunneling microscopy and non-contact atomic force microscopy. Unpaired $π$ electrons are introduced into the aromatic topology of truxene molecular graphenoids one by one by dissociating hydrogen atoms at the pentagon defects via atom manipulation. Scanning tunneling spectroscopy measurements together with density functional theory calculations suggest that the unpaired electrons are ferromagnetically coupled, forming a collective high-spin quartet state of S=3/2. Our work demonstrates that the collective spin ordering can be realized through engineering regular patterned topological defects in molecular graphenoids, providing a new platform for designer one-dimensional ferromagnetic spin chains and two-dimensional ferromagnetic networks.

preprint2021arXiv

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

preprint2020arXiv

Combining quantum spin hall effect and superconductivity in few-layer stanene

Stanene was proposed to be a quantum spin hall insulator containing topological edges states and a time reversal invariant topological superconductor hosting helical Majorana edge mode. Recently, experimental evidences of existence of topological edge states have been found in monolayer stanene films and superconductivity has been observed in few-layer stanene films excluding single layer. An integrated system with both topological edge states and superconductivity are higly pursued as a possible platform to realize topological superconductivity. Few-layer stanene show great potential to meet this requirement and is highly desired in experiment. Here we successfully grow few-layer stanene on bismuth (111) substrate. Both topological edge states and superconducting gaps are observed by in-situ scanning tunneling microscopy/spectroscopy (STM/STS). Our results take a further step towards topological superconductivity by stanene films.

preprint2020arXiv

Designer spin order in diradical nanographenes

The magnetic properties of carbon materials are at present the focus of an intense research effort in physics, chemistry and materials science due to their potential applications in spintronics and quantum computations. Although the presence of spins in open-shell nanographenes has been recently confirmed, the ability to control magnetic coupling sign has remained elusive, but the most desirable. Here, we demonstrate an effective approach of engineering magnetic ground states in atomically precise open-shell bipartite/nonbipartite nanographenes using combined scanning probe techniques and mean-field Hubbard model calculations. The magnetic coupling sign between two spins has been controlled via breaking bipartite lattice symmetry of nanographenes. In addition, the exchange-interaction strength between two spins has been widely tuned by finely tailoring their spin density overlap, realizing a large exchange-interaction strength of 42 meV. Our demonstrated method provides ample opportunities for designer above-room-temperature magnetic phases and functionalities in graphene nanomaterials.

preprint2020arXiv

Stanene: A Good Platform for Topological Insulator and Topological Superconductor

Two dimensional (2D) topological insulators (TIs) and topological superconductors (TSCs) have been intensively studied for recent years due to its great potential for dissipationless electron transportation and fault-tolerant quantum computing, respectively. Here we focus on stanene, the tin analogue of graphene, to give a brief review of its development as a candidate for both 2D TI and TSC. Stanene is proposed to be a TI with a large gap of 0.3 eV, and its topological properties are sensitive to various factors, e.g., the lattice constants, chemical functionalization and layer thickness, which offer various methods for phase tunning. Experimentally, the inverted gap and edge states are observed recently, which are strong evidence for TI. In addition, stanene is also predicted to be a time reversal invariant TSC by breaking inversion symmetry, supporting helical Majorana edge modes. The layer-dependent superconductivity of stanene is recently confirmed by both transport and scanning tunneling microscopy measurements. This review gives a detailed introduction to stanene and its topological properties and some prospects are also discussed.

preprint2019arXiv

Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br

We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic magnetoresistance as large as 3*10^5 in single-crystalline AuTe2Br in a magnetic field up to 58 T.

preprint2016arXiv

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

preprint2015arXiv

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy

Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer (ML) films, networks of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other. There are also isolated ones in the bottom layer without companion in the top-layer and are detected by STM/S through quantum tunneling of the defect states through the barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML film reveals some common features as well as differences. Quantum confinement of the defect states is indicated. Point defects in BL MoSe2 are also observed by STM/S, where ionization of the donor defect by the tip-induced electric field is evidenced. These results are of great fundamental interests as well as practical relevance of devices made of MoSe2 ultrathin layers.

preprint2015arXiv

Observation of intervalley quantum interference in epitaxial monolayer WSe2

Monolayer (ML) transition metal dichalcogenides (TMDs) have been attracting great research attentions lately for their extraordinary properties, in particular the exotic spin-valley coupled electronic structures that promise future spintronic and valleytronic applications1-3. The energy bands of ML TMDs have well separated valleys that constitute effectively an extra internal degree of freedom for low energy carriers3-12. The large spin-orbit coupling in the TMDs makes the spin index locked to the valley index, which has some interesting consequences such as the magnetoelectric effects in 2H bilayers13. A direct experimental characterization of the spin-valley coupled electronic structure can be of great interests for both fundamental physics and device applications. In this work, we report the first experimental observation of the quasi-particle interference (QPI) patterns in ML WSe2 using low-temperature (LT) scanning tunneling microscopy/spectroscopy (STM/S). We observe intervalley quantum interference involving the Q-valleys in the conduction band due to spin-conserved scattering processes, while spin-flip intervalley scattering is absent. This experiment establishes unequivocally the presence of spin-valley coupling and affirms the large spin-splitting at the Q valleys. Importantly, the inefficient spin-flip intervalley scattering implies long valley and spin lifetime in ML WSe2, which represents a key figure of merit for valley-spintronic applications.

preprint2014arXiv

Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations

We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe2 grown by molecular-beam epitaxy. High-resolution transmission electron microscopy and scanning tunneling microscopy and spectroscopy (STM/STS) studies show these 1D modes are mid-gap states at inversion domain boundaries. STM/STS measurements further reveal intensity undulations of the metallic modes, presumably arising from the superlattice potentials due to moire pattern and the quantum confinement effect. A dense network of the metallic modes with high density of states is of great potential for heterocatalysis applications. The interconnection of such mid-gap 1D conducting channels may also imply new transport behaviors distinct from the 2D bulk.