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Xu-Cun Ma

Xu-Cun Ma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

40 published item(s)

preprint2022arXiv

Berry-phase switch in electrostatically-confined topological surface states

Here we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the 7-quintuple-layer three dimensional (3D) topological insulator (TI) Sb2Te3 epitaxial films. As shown by spatially- and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semi-classical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct observation of nodeless superconductivity and phonon modes in electron-doped copper oxide Sr$_{1-x}$Nd$_x$CuO$_2$

The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study an electron-doped copper oxide compound Sr$_{1-x}$Nd$_x$CuO$_2$ that has only bare cations separating the CuO$_2$ planes and thus the simplest infinite-layer structure among all cuprate superconductors. Tunneling conductance spectra of the major CuO$_2$ planes in the superconducting state revealed direct evidence for a nodeless pairing gap, regardless of variation of its magnitude with the local doping of trivalent neodymium. Furthermore, three distinct bosonic modes are observed as multiple peak-dip-hump features outside the superconducting gaps and their respective energies depend little on the spatially varying gaps. Along with the bosonic modes with energies identical to those of the external, bending and stretching phonons of copper oxides, our findings indicate their origin from lattice vibrations rather than spin excitations.

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preprint2022arXiv

Selective Trapping of Hexagonally Warped Topological Surface States in a Triangular Quantum Corral

The surface of a three-dimensional topological insulator (TI) hosts two-dimensional massless Dirac fermions (DFs), the gapless and spin-helical nature of which yields many exotic phenomena, such as the immunity of topological surface states (TSS) to back-scattering. This leads to their high transmission through surface defects or potential barriers. Quantum corrals, previously elaborated on metal surfaces, can act as nanometer-sized electronic resonators to trap Schrödinger electrons by quantum confinement. It is thus intriguing, concerning their peculiar nature, to put the Dirac electrons of TSS to the test in similar circumstances. Here, we report the behaviors of TSS in a triangular quantum corral (TQC) fabricated by epitaxially growing Bi bilayer nanostructures on the surfaces of Bi2Te3 films. Unlike a circular corral, the TQC is supposed to be totally transparent for DFs. By mapping the electronic structure of TSS inside TQCs through a low-temperature scanning tunneling microscope in the real space, both the trapping and de-trapping behaviors of the TSS electrons are observed. The selection rules are found to be governed by the geometry and spin texture of the constant energy contour of TSS upon the strong hexagonal warping in Bi2Te3. Careful analysis of the quantum interference patterns of quasi-bound states yields the corresponding wave vectors of trapped TSS, through which two trapping mechanisms favoring momenta in different directions are uncovered. Our work indicates the extended nature of TSS and elucidates the selection rules of the trapping of TSS in the presence of a complicated surface state structure, giving insights into the effective engineering of DFs in TIs.

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preprint2022arXiv

Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX$_2$ (X = Se, Te) at the two-dimensional limit

Charge density wave (CDW) is a collective quantum phenomenon in metals and features a wave-like modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX$_2$ (X = Se, Te) ultra-thin films, accompanied by a commensurate 2 $\times$ 2 CDW order. Furthermore, we observed a CDW energy gap up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX$_2$ films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of Zr 4d-derived elliptical electron conduction band at the corners of the Brillouin zone.

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preprint2022arXiv

Tuning the electronic states and superconductivity in alkali fulleride films

The successful preparation of superconducting alkali fulleride (A$_x$C$_{60}$, A = K, Rb, Cs) films using state-of-the-art molecular beam epitaxy overcomes the disadvantages of the air-sensitivity and phase separation in bulk A$_x$C$_{60}$, enabling for the first time a direct investigation of the superconductivity in alkali fullerides on the molecular scale. In this paper, we briefly review recent cryogenic scanning tunneling microscopy results of the structural, electronic, and superconducting properties of the fcc A$_x$C$_{60}$ films grown on graphitized SiC substrates. Robust $s$-wave superconductivity is revealed against the pseudogap, electronic correlation, non-magnetic impurities, and merohedral disorder. By controlling the alkali metal species, film thickness, and electron doping, we systematically tune the C$_{60}^{x-}$ orientational orderings and superconductivity in A$_x$C$_{60}$ films and then complete a unified phase diagram of superconducting gap size vs electronic correlation and doping. These investigations are conclusive and elucidated that the $s$-wave superconductivity retains in alkali fullerides despite of the electronic correlation and presence of pseudogap.

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preprint2021arXiv

Atomic-Scale Probing of Heterointerface Phonon Bridges in Nitride Semiconductor

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various localized phonon modes, of which the extended and interfacial modes act as bridges to connect the bulk AlN modes and bulk Si modes, and are expected to boost the inelastic phonon transport thus substantially contribute to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.

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preprint2021arXiv

Charge density waves and Fermi level pinning in monolayer and bilayer SnSe$_2$

Materials with reduced dimensionality often exhibit exceptional properties that are different from their bulk counterparts. Here we report the emergence of a commensurate 2 $\times$ 2 charge density wave (CDW) in monolayer and bilayer SnSe$_2$ films by scanning tunneling microscope. The visualized spatial modulation of CDW phase becomes prominent near the Fermi level, which is pinned inside the semiconductor band gap of SnSe$_2$. We show that both CDW and Fermi level pinning are intimately correlated with band bending and virtual induced gap states at the semiconductor heterointerface. Through interface engineering, the electron-density-dependent phase diagram is established in SnSe$_2$. Fermi surface nesting between symmetry inequivalent electron pockets is revealed to drive the CDW formation and to provide an alternative CDW mechanism that might work in other compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$. In underdoped regions, we observe a universal pseudogap opening around the Fermi level, which changes little with the applied magnetic field and the occurrence of Sn vacancies. The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase. Our findings, along with the previously observed superconductivity at a higher doping level, are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Merohedral disorder and impurity impacts on superconductivity of fullerenes

Local quasiparticle states around impurities provide essential insight into the mechanism of unconventional superconductivity, especially when the candidate materials are proximate to an antiferromagnetic Mott-insulating phase. While such states have been reported in atom-based cuprates and iron-based compounds, they are unexplored in organic superconductors which feature tunable molecular orientation. Here we employ scanning tunneling microscopy and spectroscopy to reveal multiple forms of robustness of an exotic $s$-wave superconductivity in epitaxial Rb$_3$C$_{60}$ films against merohedral disorder, non-magnetic single impurities and step edges at the atomic scale. Also observed have been Yu-Shiba-Rusinov (YSR) states induced by deliberately incurred Fe adatoms that act as magnetic scatters. The bound states display abrupt spatial decay and vary in energy with the Fe adatom registry. Our results and the universal optimal superconductivity at half-filling point towards local electron pairing in which the multiorbital electronic correlations and intramolecular phonons together drive the high-temperature superconductivity of doped fullerenes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct visualization of ambipolar Mott transition in cuprate CuO2 planes

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott transition in Sr1-xLaxCuO2+y cuprate films that cover the entire electron- and hole-doped regimes. Tunneling conductance measurements directly on the cooper-oxide (CuO2) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring atomic-scale electronic response of CuO2 to substitutional dopants and intrinsic defects in a sister compound Sr0.92Nd0.08CuO2. The results could be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic inhomogeneity and band structure on superstructural CuO2 planes of infinite-layer Sr0.94La0.06CuO2+y films

Scanning tunneling microscopy and spectroscopy are utilized to study the atomic-scale structure and electronic properties of infinite-layer Sr0.94La0.06CuO2+y films prepared on SrRuO3-buffered SrTiO3(001) substrate by ozone-assisted molecular beam epitaxy. Incommensurate structural supermodulation with a period of 24.5Å is identified on the CuO2-terminated surface, leading to characteristic stripes running along the 45o direction with respect to the Cu-O-Cu bonds. Spatially resolved tunneling spectra reveal substantial inhomogeneity on a nanometer length scale and emergence of in-gap states at sufficient doping. Despite the Fermi level shifting up to 0.7 eV, the charge-transfer energy gap of the CuO2 planes remains fundamentally unchanged at different doping levels. The occurrence of the CuO2 superstructure is constrained in the surface region and its formation is found to link with oxygen intake that serves as doping agent of holes in the epitaxial films.

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preprint2020arXiv

Molecular beam epitaxy growth and surface structure of Sr1-xNdxCuO2 cuprate films

We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate temperature and flux control has been used to achieve single-phase, stoichiometric, and c-axis oriented films. The surface of the films is usually characterized by a mixed CuO2 surface and gridlike superstructure. The superstructure exhibits a periodicity of 3.47 nm that corresponds to a coincidence lattice between the overlayer peroxide SrO2 and underlying CuO2 plane, and gives rise to a conductance spectrum that is distinct from the Mott-Hubbard band structure of CuO2. At a higher Nd composition x > 0.1, a (2 x 2) surface characteristic of the hole-doped CuO2 emerges, which we ascribe to the intake of apical oxygens in the intervening Sr planes.

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preprint2020arXiv

Stoichiometry and defect superstructures in epitaxial FeSe films on SrTiO3

Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of Se leads to formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer FeSe during low-temperature annealing, which is revealed to link with Fe vacancy formation and adatom migration. Our results document very special roles of film stoichiometry and help unravel several controversies in the properties of monolayer FeSe films.

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preprint2019arXiv

Coexistence of full-gap superconductivity and pseudogap in two-dimensional fullerides

Alkali-fulleride superconductors with a maximum critical temperature Tc of 40 K exhibit similar electronic phase diagram with unconventional high-Tc superconductors where the superconductivity resides proximate to a magnetic Mott-insulating state. However, distinct from cuprate compounds, which superconduct through two-dimensional (2D) CuO2 planes, alkali fullerides are attributed to the three-dimensional (3D) members of high-Tc family. Here, we employ scanning tunneling microscopy to show that trilayer K3C60 displays fully gapped strong coupling s-wave superconductivity that coexists spatially with a cuprate-like pseudogap state above Tc = 22 K and within vortices. A precise control of electronic correlations and doping reveals that superconductivity occurs near a superconductor-Mott insulator transition and reaches maximum at half-filling. The s-wave symmetry retains over the entire phase diagram, which, in conjunction with an abrupt decline of superconductivity below half-filling, demonstrates that alkali fullerides are predominantly phonon-mediated superconductors, although the multiorbital electronic correlations also come into play.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Insulating Parent Phase and Distinct Doping Evolution to Superconductivity in Single-Layer FeSe/SrTiO3 Films

The single-layer FeSe/SrTiO3 (FeSe/STO) films have attracted much attention because of their simple crystal structure, distinct electronic structure and record high superconducting transition temperature (Tc). The origin of the dramatic Tc enhancement in single-layer FeSe/STO films and the dichotomy of superconductivity between single-layer and multiple-layer FeSe/STO films are still under debate. Here we report a comprehensive high resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy measurements on the electronic structure evolution with doping in single-layer and multiple-layer FeSe/STO films. We find that the single-layer FeSe/STO films have a distinct parent phase and a route of doping evolution to superconductivity that are fundamentally different from multiple-layer FeSe/STO films. The parent phase of the single-layer FeSe/STO films is insulating, and its doping evolution is very similar to that of doping a Mott insulator in cuprate superconductors. In multiple-layer FeSe/STO films, high-Tc superconductivity occurs by suppressing the nematic order in the parent compound with electron doping. The single-layer FeSe/STO films represent the first clear case in the iron-based superconductors that the parent compound is an insulator. Our observations of the unique parent state and doping evolution in the single-layer FeSe/STO films provide key insight in understanding its record high-Tc superconductivity. They also provide a new route of realizing superconductivity in iron-based superconductors that is common in high temperature cuprate superconductors.

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preprint2019arXiv

Visualizing molecular orientational ordering and electronic structure in CsnC60 fulleride films

Alkali-doped fullerides exhibit a wealth of unusual phases that remain controversial by nature. Here we report a cryogenic scanning tunneling microscopy study of the sub-molecular structural and electronic properties of expanded fullerene C60 films with various cesium (Cs) doping. By varying the discrete charge states and film thicknesses, we reveal a large tunability of orientational ordering of C60 anions, yet the tunneling conductance spectra are all robustly characteristic of energy gaps, hallmarks of Jahn-Teller instability and electronic correlations. The Fermi level lies halfway within the insulating gap for stoichiometric Cs doping level of n = 1, 2, 3 and 4, apart from which it moves toward band edges with concomitant electronic states within the energy gap. Our findings establish the universality of Jahn-Teller instability, and clarify the relationship among the doping, structural and electronic structures in CsnC60 fullerides.

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preprint2016arXiv

Electronic structure of the ingredient planes of cuprate superconductor Bi2Sr2CuO6+δ: a comparison study with Bi2Sr2CaCu2O8+δ

By means of low-temperature scanning tunneling microscopy, we report on the electronic structures of BiO and SrO planes of Bi2Sr2CuO6+δ (Bi-2201) superconductor prepared by argon-ion bombardment and annealing. Depending on post annealing conditions, the BiO planes exhibit either pseudogap (PG) with sharp coherence peaks and an anomalously large gap of 49 meV or van Hove singularity (VHS) near the Fermi level, while the SrO is always characteristic of a PG-like feature. This contrasts with Bi2Sr2CaCu2O8+δ (Bi-2212) superconductor where VHS occurs solely on the SrO plane. We disclose the interstitial oxygen dopants (δ in the formulas) as a primary cause for the occurrence of VHS, which are located dominantly around the BiO and SrO planes, respectively, in Bi-2201 and Bi-2212. This is supported by the contrasting structural buckling amplitude of BiO and SrO planes in the two superconductors. Our findings provide solid evidence for the irrelevance of PG to the superconductivity in the two superconductors, as well as insights into why Bi-2212 can achieve a higher superconducting transition temperature than Bi-2201, and by implication, the mechanism of cuprate superconductivity.

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preprint2016arXiv

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

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preprint2016arXiv

High-temperature superconductivity in single-unit-cell FeSe films on anatase TiO2(001)

We report on the observation of high-temperature ($T_\textrm{c}$) superconductivity and magnetic vortices in single-unit-cell FeSe films on anatase TiO$_2$(001) substrate by using scanning tunneling microscopy. A systematic study and engineering of interfacial properties has clarified the essential roles of substrate in realizing the high-$T_\textrm{c}$ superconductivity, probably via interface-induced electron-phonon coupling enhancement and charge transfer. By visualizing and tuning the oxygen vacancies at the interface, we find their very limited effect on the superconductivity, which excludes interfacial oxygen vacancies as the primary source for charge transfer between the substrate and FeSe films. Our findings have placed severe constraints on any microscopic model for the high-$T_\textrm{c}$ superconductivity in FeSe-related heterostructures.

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preprint2016arXiv

Nodeless pairing in superconducting copper-oxide monolayer films on Bi2Sr2CaCu2O8+δ

The pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO2 layers. Here, by growing CuO2 monolayer films on Bi2Sr2CaCu2O8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherence and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. Our results support an s-wave superconductivity in Bi2Sr2CaCu2O8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO2 layers.

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preprint2016arXiv

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium (K)-doped FeSe ultra-thin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-Tc dome, whereas in the heavily electron-doped higher-Tc dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ~ 14 meV, irrespective of film thickness, verifying the higher-Tc superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase has stepped towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

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preprint2016arXiv

Visualizing the elongated vortices in $γ$-Ga nanostrips

We study the magnetic response of superconducting $γ$-Ga via low temperature scanning tunneling microscopy and spectroscopy. The magnetic vortex cores rely substantially on the Ga geometry, and exhibit an unexpectedly-large axial elongation with aspect ratio up to 40 in rectangular Ga nano-strips (width $l$ $<$ 100 nm). This is in stark contrast with the isotropic circular vortex core in a larger round-shaped Ga island. We suggest that the unusual elongated vortices in Ga nanostrips originate from geometric confinement effect probably via the strong repulsive interaction between the vortices and Meissner screening currents at the sample edge. Our finding provides novel conceptual insights into the geometrical confinement effect on magnetic vortices and forms the basis for the technological applications of superconductors.

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preprint2015arXiv

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

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preprint2015arXiv

Band engineering of Dirac surface states in topological insulators-based van der Waals heterostructures

The existence of gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the non-trivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in-situ angle-resolved photoemission spectroscopy (ARPES) and the first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological non-trivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds lights in designing artificial topological materials for electronic and spintronic purposes.

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preprint2015arXiv

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-$T_\textrm{c}$ Cuprate Superconductor Bi2Sr2CaCu2O8+δ

Understanding the mechanism of high transition temperature (Tc) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy, we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO2) of Bi2Sr2CaCu2O8+δ superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected Van Hove singularity near the Fermi level, while the CuO2 planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near Tc, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high Tc superconductivity in cuprates.

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preprint2015arXiv

Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe$_2$ ultrathin films

Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and interstitial, respectively. By means of scanning tunneling microscopy, we demonstrate that the well-established charge density waves can survive in single unit-cell (one triple layer) regime, and find a gradual reduction in their correlation length as the density of surface defects in TiSe2 ultrathin films increases. Our findings offer important insights into the nature of charge density wave in TiSe2, and also pave a material foundation for potential applications based on the collective electronic states.

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preprint2015arXiv

Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate

The stoichiometric "111" iron-based superconductor, LiFeAs, has attacted great research interest in recent years. For the first time, we have successfully grown LiFeAs thin film by molecular beam epitaxy (MBE) on SrTiO3(001) substrate, and studied the interfacial growth behavior by reflection high energy electron diffraction (RHEED) and low-temperature scanning tunneling microscope (LT-STM). The effects of substrate temperature and Li/Fe flux ratio were investigated. Uniform LiFeAs film as thin as 3 quintuple-layer (QL) is formed. Superconducting gap appears in LiFeAs films thicker than 4 QL at 4.7 K. When the film is thicker than 13 QL, the superconducting gap determined by the distance between coherence peaks is about 7 meV, close to the value of bulk material. The ex situ transport measurement of thick LiFeAs film shows a sharp superconducting transition around 16 K. The upper critical field, Hc2(0)=13.0 T, is estimated from the temperature dependent magnetoresistance. The precise thickness and quality control of LiFeAs film paves the road of growing similar ultrathin iron arsenide films.

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preprint2015arXiv

Probing Dirac Fermion Dynamics in Topological Insulator Bi$_2$Se$_3$ Films with Scanning Tunneling Microscope

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi$_2$Se$_3$ ultrathin films. At two-dimensional limit, bulk electrons becomes quantized and the quantization can be controlled by film thickness at single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of phase relaxation length $l_ϕ$ and inelastic scattering lifetime $τ$ of topological surface-state electrons. We find that $τ$ exhibits a remarkable $(E-E_F)^{-2}$ energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

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preprint2015arXiv

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

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preprint2014arXiv

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which however show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron doping level. Scanning tunneling microscopy and first principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in Bi2Se3 matrix, which contribute to the observed chemical potential dependent gap-opening in the Dirac surface states without long-range ferromagnetic order.

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preprint2014arXiv

Imaging the Electron-Boson Coupling in Superconducting FeSe

Scanning tunneling spectroscopy has been used to reveal signatures of a bosonic mode in the local quasiparticle density of states of superconducting FeSe films. The mode appears below Tc as a 'dip-hump' feature at energy Ω~ 4.7 kBTc beyond the superconducting gap Δ. Spectra on strained regions of the FeSe films reveal simultaneous decreases in Δand Ω. This contrasts with all previous reports on other high-Tc superconductors, where Δlocally anti-correlates with Ω. A local strong coupling model is found to reconcile the discrepancy well, and to provide a unified picture of the electron-boson coupling in unconventional superconductors.

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preprint2013arXiv

Experimental Proof of Universal Conductance Fluctuation in Quasi-1D Epitaxial Bi$_{2}$Se$_{3}$ Wires

We report on conductance fluctuation in quasi-one-dimensional wires made of epitaxial Bi$_{2}$Se$_{3}$ thin film. We found that this type of fluctuation decreases as the wire length becomes longer and that the amplitude of the fluctuation is well scaled to the coherence, thermal diffusion, and wire lengths, as predicted by conventional universal conductance fluctuation (UCF) theory. Additionally, the amplitude of the fluctuation can be understood to be equivalent to the UCF amplitude of a system with strong spin-orbit interaction and no time-reversal symmetry. These results indicate that the conductance fluctuation in Bi$_{2}$Se$_{3}$ wires is explainable through UCF theory. This work is the first to verify the scaling relationship of UCF in a system with strong spin-orbit interaction.

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preprint2012arXiv

Suppression of Superconductivity by Twin Boundaries in FeSe

Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate twin boundaries in stoichiometric FeSe films grown by molecular beam epitaxy. Twin boundaries can be unambiguously identified by imaging the 90° change in the orientation of local electronic dimers from Fe site impurities on either side. Twin boundaries run at approximately 45° to the Fe-Fe bond directions, and noticeably suppress the superconducting gap, in contrast with the recent experimental and theoretical findings in other iron pnictides. Furthermore, vortices appear to accumulate on twin boundaries, consistent with the degraded superconductivity there. The variation in superconductivity is likely caused by the increased Se height in the vicinity of twin boundaries, providing the first local evidence for the importance of this height to the mechanism of superconductivity.

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preprint2012arXiv

Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3

In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

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preprint2011arXiv

Current induced anisotropic magnetoresistance in topological insulator films

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurement, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Measurements under in-plane magnetic field, along and perpendicular to the bias current show opposite magnetoresistance. We argue that this contrasting behavior is related to the locking of the spin and current direction providing evidence for helical spin structure of the topological surface states.

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preprint2011arXiv

Evidence for electron-electron interaction in topological insulator thin films

We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band gap in the Pb doped filims. Transport data show weak localization behavior, as expected for a 2D system, but a detailed analysis within the standard theoretical framework of diffusive transport shows that the temperature and magnetic field dependences of resistance cannot be reconciled in a theory that neglects inter-electron interactions. We demonstrate that an excellent account of quantum corrections to conductivity is achieved when both disorder and interaction are taken into account. These results clearly demonstrate that it is crucial to include electron electron interaction for a comprehensive understanding of diffusive transport in topological insulators.

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preprint2011arXiv

Interplay between topological insulators and superconductors

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films contacted by superconducting (In, Al and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi2Se3 film strongly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are the consequence of the interplay between the Cooper pairs of the electrodes and the spin polarized current of the surface states in Bi2Se3.

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preprint2010arXiv

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

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preprint2008arXiv

Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate

Superconductor films on semiconductor substrates draw much attention recently since the derived superconductor-based electronics have been shown promising for future data process and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual giant magnetoresistance effect when the Pb film is superconducting. In addition to the great fundamental interest of this effect, the simple structure and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.

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