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Jinsong Zhang

Jinsong Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conArtificial Intelligencecond-mat.str-eleess.ASSoundComputer VisionHuman-Computer InteractionInformation Retrieval

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Published work

16 published item(s)

preprint2025arXiv

From Events to Trending: A Multi-Stage Hotspots Detection Method Based on Generative Query Indexing

LLM-based conversational systems have become a popular gateway for information access, yet most existing chatbots struggle to handle news-related trending queries effectively. To improve user experience, an effective trending query detection method is urgently needed to enable differentiated processing of such target traffic. However, current research on trending detection tailored to the dialogue system scenario remains largely unexplored, and methods designed for traditional search engines often underperform in conversational contexts due to radically distinct query distributions and expression patterns. To fill this gap, we propose a multi-stage framework for trending detection, which achieves systematic optimization from both offline generation and online identification perspectives. Specifically, our framework first exploits selected hot events to generate index queries, establishing a key bridge between static events and dynamic user queries. It then employs a retrieval matching mechanism for real-time online detection of trending queries, where we introduce a cascaded recall and ranking architecture to balance detection efficiency and accuracy. Furthermore, to better adapt to the practical application scenario, our framework adopts a single-recall module as a cold-start strategy to collect online data for fine-tuning the reranker. Extensive experiments demonstrate that our framework significantly outperforms baseline methods in both offline evaluations and online A/B tests, and user satisfaction is relatively improved by 27\% in terms of positive-negative feedback ratio.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Tailoring Neel orders in Layered Topological Antiferromagnets

In the two-dimensional limit, the interplay between Neel order and band topology in van der Waals topological antiferromagnets can give rise to novel quantum phenomena in the quantum anomalous Hall state, including the cascaded quantum phase transition and spin-modulation effect. However, due to the absence of net magnetization in antiferromagnets, probing the energetically degenerate Neel orders has long remained a significant challenge. Inspired by recent advances in realizing the quantum anomalous Hall effect in AlOx-capped layered topological antiferromagnet MnBi2Te4, we demonstrate deterministic control over the Neel order through surface anisotropy engineering enabled by the AlOx capping layer. By tuning the surface anisotropy, we uncover paritydependent symmetry breaking states that manifest as distinct odd-even boundary architectures, including 180 degree domain walls or continuous spin structures. Comparative studies between AlOx-capped and pristine odd-layer MnBi2Te4 flakes using domain-resolved magnetic force microscopy reveal pronounced differences in coercivity and magnetization-reversal dynamics. Notably, an unconventional giant exchange bias, which arises from perpendicular magnetic anisotropy rather than traditional interface pinning mechanisms, is observed for the first time. Our findings establish a pathway for manipulating Neel order through surface modification in A-type antiferromagnets, offering new opportunities for spintronic devices and quantum information technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Influences of the dissipative topological edge state on quantized transport in MnBi2Te4

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Text-Aware End-to-end Mispronunciation Detection and Diagnosis

Mispronunciation detection and diagnosis (MDD) technology is a key component of computer-assisted pronunciation training system (CAPT). In the field of assessing the pronunciation quality of constrained speech, the given transcriptions can play the role of a teacher. Conventional methods have fully utilized the prior texts for the model construction or improving the system performance, e.g. forced-alignment and extended recognition networks. Recently, some end-to-end based methods attempt to incorporate the prior texts into model training and preliminarily show the effectiveness. However, previous studies mostly consider applying raw attention mechanism to fuse audio representations with text representations, without taking possible text-pronunciation mismatch into account. In this paper, we present a gating strategy that assigns more importance to the relevant audio features while suppressing irrelevant text information. Moreover, given the transcriptions, we design an extra contrastive loss to reduce the gap between the learning objective of phoneme recognition and MDD. We conducted experiments using two publicly available datasets (TIMIT and L2-Arctic) and our best model improved the F1 score from $57.51\%$ to $61.75\%$ compared to the baselines. Besides, we provide a detailed analysis to shed light on the effectiveness of gating mechanism and contrastive learning on MDD.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast coherent interlayer phonon dynamics in atomically thin layers of MnBi2Te4

The atomically thin MnBi2Te4 crystal is a novel magnetic topological insulator, exhibiting exotic quantum physics. Here we report a systematic investigation of ultrafast carrier dynamics and coherent interlayer phonons in few-layer MnBi2Te4 as a function of layer number using time-resolved pump-probe reflectivity spectroscopy. Pronounced coherent phonon oscillations from the interlayer breathing mode are directly observed in the time domain. We find that the coherent oscillation frequency, the photocarrier and coherent phonon decay rates all depend sensitively on the sample thickness. The time-resolved measurements are complemented by ultralow-frequency Raman spectroscopy measurements, which both confirm the interlayer breathing mode and additionally enable observation of the interlayer shear mode. The layer dependence of these modes allows us to extract both the out-of-plane and in-plane interlayer force constants. Our studies not only reveal the interlayer van der Waals coupling strengths, but also shed light on the ultrafast optical properties of this novel two-dimensional material.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Universal scaling of the critical temperature and the strange-metal scattering rate in unconventional superconductors

Dramatic evolution of properties with minute change in the doping level is a hallmark of the complex chemistry which governs cuprate superconductivity as manifested in the celebrated superconducting domes as well as quantum criticality taking place at precise compositions. The strange metal state, where the resistivity varies linearly with temperature, has emerged as a central feature in the normal state of cuprate superconductors. The ubiquity of this behavior signals an intimate link between the scattering mechanism and superconductivity. However, a clear quantitative picture of the correlation has been lacking. Here, we report observation of quantitative scaling laws between the superconducting transition temperature $T_{\rm c}$ and the scattering rate associated with the strange metal state in electron-doped cuprate $\rm La_{2-x}Ce_xCuO_4$ (LCCO) as a precise function of the doping level. High-resolution characterization of epitaxial composition-spread films, which encompass the entire overdoped range of LCCO has allowed us to systematically map its structural and transport properties with unprecedented accuracy and increment of $Δx = 0.0015$. We have uncovered the relations $T_{\rm c}\sim(x_{\rm c}-x)^{0.5}\sim(A_1^\square)^{0.5}$, where $x_c$ is the critical doping where superconductivity disappears on the overdoped side and $A_1^\square$ is the scattering rate of perfect $T$-linear resistivity per CuO$_2$ plane. We argue that the striking similarity of the $T_{\rm c}$ vs $A_1^\square$ relation among cuprates, iron-based and organic superconductors is an indication of a common mechanism of the strange metal behavior and unconventional superconductivity in these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Adaptive 3D Face Reconstruction from a Single Image

3D face reconstruction from a single image is a challenging problem, especially under partial occlusions and extreme poses. This is because the uncertainty of the estimated 2D landmarks will affect the quality of face reconstruction. In this paper, we propose a novel joint 2D and 3D optimization method to adaptively reconstruct 3D face shapes from a single image, which combines the depths of 3D landmarks to solve the uncertain detections of invisible landmarks. The strategy of our method involves two aspects: a coarse-to-fine pose estimation using both 2D and 3D landmarks, and an adaptive 2D and 3D re-weighting based on the refined pose parameter to recover accurate 3D faces. Experimental results on multiple datasets demonstrate that our method can generate high-quality reconstruction from a single color image and is robust for self-occlusion and large poses.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Formant Tracking Using Dilated Convolutional Networks Through Dense Connection with Gating Mechanism

Formant tracking is one of the most fundamental problems in speech processing. Traditionally, formants are estimated using signal processing methods. Recent studies showed that generic convolutional architectures can outperform recurrent networks on temporal tasks such as speech synthesis and machine translation. In this paper, we explored the use of Temporal Convolutional Network (TCN) for formant tracking. In addition to the conventional implementation, we modified the architecture from three aspects. First, we turned off the "causal" mode of dilated convolution, making the dilated convolution see the future speech frames. Second, each hidden layer reused the output information from all the previous layers through dense connection. Third, we also adopted a gating mechanism to alleviate the problem of gradient disappearance by selectively forgetting unimportant information. The model was validated on the open access formant database VTR. The experiment showed that our proposed model was easy to converge and achieved an overall mean absolute percent error (MAPE) of 8.2% on speech-labeled frames, compared to three competitive baselines of 9.4% (LSTM), 9.1% (Bi-LSTM) and 8.9% (TCN).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect, which was realized in magnetically doped topological insulators (TIs) in the absence of magnetic field. Recently, the layered van der Waals compound MnBi2Te4 has been theoretically predicted and experimentally verified to be a TI with interlayer antiferromagnetic (AFM) order. It is a rare stoichiometric material with coexisting topology and magnetism, thus represents a perfect building block for complex topological-magnetic structures. Here we investigate the quantum transport behaviors of both bulk crystal and exfoliated MnBi2Te4 flakes in a field effect transistor geometry. In the 6 septuple layers (SLs) device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristic of the axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic field range, and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2 (h is the Plank constant and e is the elemental charge). These results pave the road for using even-number-SL MnBi2Te4 to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrically tuned magnetic order and magnetoresistance in a topological insulator

The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic topological magnetoelectric effects. A particularly intriguing phenomenon in this case is the magnetic field dependence of electrical resistance, or magnetoresistance (MR). The intricate interplay between topological protection and broken-TRS may lead to highly unconventional MR behaviour that can find unique applications in magnetic sensing and data storage. However, so far the MR of TI with spontaneously broken TRS is still poorly understood, mainly due to the lack of well-controlled experiments. In this work, we investigate the magneto transport properties of a ferromagnetic TI thin film fabricated into a field effect transistor device. We observe an unusually complex evolution of MR when the Fermi level (EF) is tuned across the Dirac point (DP) by gate voltage. In particular, MR tends to be positive when EF lies close to the DP but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture for localization, but is intimately correlated with the gate-tuned magnetic order. We show that the underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative MR. The simultaneous electrical control of magnetic order and magneto transport facilitates future TI-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Direct observation of high temperature superconductivity in one-unit-cell FeSe films

Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of ~ 65 K. If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high TC superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films is challenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and a extremely large critical current density JC ~ 1.7*106 A/cm2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

New Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping

We report the discovery of a new diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess Lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism is mediated in semiconducting samples of relative low mobile carriers with a small coercive force, indicating an easy spin flip.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.

0 citations0 reviewsNo code linkedOpen access