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Yunbo Ou

Yunbo Ou contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Strain-Tuned Magnetic Anisotropy in Sputtered Thulium Iron Garnet Ultrathin Films and TIG/Au/TIG Valve Structures

Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.5 to 60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick films annealed at 600 °C show compressive strain favoring an in-plane magnetic anisotropy (IPMA), whereas films annealed above 800 °C are under a tensile strain leading to a perpendicular magnetic anisotropy (PMA). Air-annealed films present a high degree of crystallinity and magnetization saturation close to the bulk value. These results lead to successful fabrication of trilayers TIG/Au/TIG, with coupling between the TIG layers depending on Au thickness. These results will facilitate the use of TIG to create various in situ clean hybrid structures for fundamental interface exchange studies, and towards the development of complex devices. Moreover, the sputtering technique is advantageous as it can be easily scaled up for industrial applications.

preprint2019arXiv

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.