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Researcher profile

Xiaolin Wang

Xiaolin Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallArtificial IntelligenceComputation and Languagecond-mat.othercond-mat.softDistributed, Parallel, and Cluster Computinghep-exMachine Learningnucl-exphysics.flu-dyn

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Published work

12 published item(s)

preprint2026arXiv

Language-free Experience at Expo 2025 Osaka

In line with the Global Communication Plan 2025, we have pursued the development of multilingual translation technologies to realize a language-barrier-free experience at Expo 2025 Osaka. Our work includes the advancement of simultaneous interpretation systems emphasizing high translation quality and low latency. Key achievements include chunk-based input segmentation, context-aware translation, and multi-engine machine translation technologies. Through demonstration deployments and collaboration with private companies, our technologies have led to real-world applications, with several services and systems showcased at Expo 2025 Osaka.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Deep Learning Workload Scheduling in GPU Datacenters: Taxonomy, Challenges and Vision

Deep learning (DL) shows its prosperity in a wide variety of fields. The development of a DL model is a time-consuming and resource-intensive procedure. Hence, dedicated GPU accelerators have been collectively constructed into a GPU datacenter. An efficient scheduler design for such GPU datacenter is crucially important to reduce the operational cost and improve resource utilization. However, traditional approaches designed for big data or high performance computing workloads can not support DL workloads to fully utilize the GPU resources. Recently, substantial schedulers are proposed to tailor for DL workloads in GPU datacenters. This paper surveys existing research efforts for both training and inference workloads. We primarily present how existing schedulers facilitate the respective workloads from the scheduling objectives and resource consumption features. Finally, we prospect several promising future research directions. More detailed summary with the surveyed paper and code links can be found at our project website: https://github.com/S-Lab-System-Group/Awesome-DL-Scheduling-Papers

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Experimental Confirmation of the Universal Law for the Vibrational Density of States of Liquids

An analytical model describing the vibrational phonon density of states (VDOS) of liquids has long been elusive, mainly due to the difficulty in dealing with the imaginary modes dominant in the low-energy region, as described by the instantaneous normal mode (INM) approach. Nevertheless, Zaccone and Baggioli have recently developed such a model based on overdamped Langevin liquid dynamics. The model was proposed to be the universal law for the vibrational density of states of liquids. Distinct from the Debye law, g(ω) ~ ω2, for solids, the universal law for liquids reveals a linear relationship, g(ω) ~ ω, in the low-energy region. The universal law has been successfully verified with computer simulated VDOS for Lennard-Jones liquids. We further confirm this universal law with experimental VDOS measured by inelastic neutron scattering on real liquid systems including water, liquid metal, and polymer liquids. We have applied this model and extracted the effective relaxation rate for the short time dynamics for each liquid. The model has been further evaluated in the predication of the specific heat. The results have been compared with the existing experimental data as well as with values obtained by different approaches.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures

Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quarkonia production in ultra-peripheral PbPb collisions at LHCb

Measurements of coherent charmonium production cross sections together with their ratio in ultra-peripheral PbPb collisions are studied at a nucleon-nucleon centre-of-mass energy of $5.02\,\mathrm{TeV}$, the differential cross-sections are measured as a function of rapidity and transverse momentum, separately. The photo-production of \jpsi mesons at low transverse momentum is studied in peripheral PbPb collisions, which confirms coherent \jpsi production in hadronic collisions. These latest results significantly improve previous measurements and are compared with some theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An incompressible Eulerian method for fluid-structure interaction with mixed soft and rigid solids

We present a general simulation approach for incompressible fluid--structure interactions in a fully Eulerian framework using the reference map technique (RMT). The approach is suitable for modeling one or more rigid or finitely-deformable objects or soft objects with rigid components interacting with the fluid and with each other. It is also extended to control the kinematics of structures in fluids. The model is based on our previous Eulerian fluid--soft solver, and generalized to rigid structures by constraining the deformation-rate tensor in a projection framework. Several numerical examples are presented to illustrate the capability of the method.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By developing a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann's limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin gapless semiconductors

Spin gapless semiconductors (SGSs) are a new class of zero gap materials which have a fully spin polarised electrons and holes. They bridge zero gap materials and half-metals. The band structures of the SGSs can have two types of energy dispersions: Dirac linear dispersion and parabolic dispersion. The Dirac type SGSs exhibit fully spin polarized Dirac cones, and offer a platform for massless and fully spin polarized spintronics as well as dissipationless edge state via quantum anomalous Hall effect. Due to its fascinating spin and charge states, they hold great potential application in spintronics. There have been tremendous efforts worldwide on searching for suitable candidates of SGSs. In particularly, there is an increasing interest in searching for Dirac type SGSs. In the past decade, a large number of Dirac or parabolic type SGSs have been predicted by density functional theory and some of parabolic SGSs have been experimentally demonstrated. The SGSs hold great potential for high speed and low-energy consumption spintronics, electronics and optoelectronics. Here, we review both Dirac and parabolic types of SGSs in different materials systems and outline the concepts of SGSs, novel spin and charge states, and potential applications of SGSs in next generation spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Understanding the mechanism of oxygen evolution reaction (OER) with the consideration of spin

Oxygen evolution reaction (OER) with intractable high overpotential is the rate-limiting step for rechargeable metal-air battery, water electrolysis systems, and solar fuels devices. There exists a spin state transition from spin singlet OH-/H2O reactant to spin triplet O2 product, which has not received enough attention yet. In this perspective, we attempt to retrospect electron behaviours during the whole OER process, with the consideration of spin attribute. Regardless of the adopted mechanisms by different electrocatalysts, for example, adsorbate evolution mechanism (AEM) or lattice oxygen mechanism (LOM), the underlying rationale is that active sites have to extract three in four electrons with the same spin direction before the formation of O=O. This spin-sensitive nature of OER superimposes additional high requirements on the electrocatalysts, especially on the spin structure, to compliment the fast electron transfer in the interface with spin selection and smoothly delivery afterwards. When optimizing the geometric and electronic structures catering for the spin-sensitive OER, awareness of the couplings between spin, charge, orbital and lattice is necessary. Some spin-correlated physical properties, such as (1) crystal field, (2) coordination, (3) oxidation, (4) bonding, (5) eg electron number, (6) conductivity and (7) magnetism, are also discussed briefly. It is hoped that our perspective could shed lights on the underlying physics of the slow kinetics of OER, providing a rational guidance for more effective energy conversion electrocatalysts designs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Weak localization and anti-localization in rare earth doped topological insulators

We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition between weak localization and weak anti-localization demonstrates a gap opening at the Dirac point of surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results hold potential for the realization of exotic topological effects in gapped topological insulator surface states.

0 citations0 reviewsNo code linkedOpen access