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Shi Xue Dou

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Published work

7 published item(s)

preprint2016arXiv

Beyond Bean's critical state model: On the origin of paramagnetic Meissner effect

Solving phenomenological macroscopic equations instead of microscopic Ginzburg-Landau equations for superconductors is much easier and can be advantageous in a variety of applications. However, till now, only Bean's critical state model is available for the description of irreversible properties. Here we propose a plausible overall macroscopic model for both reversible and irreversible properties, combining London theory and Bean's model together based on superposition principle. First, a simple case where there is no pinning is discussed, from which a microscopic basis for Bean's model is explored. It is shown that a new concept of 'flux share' is needed when the field is increased above the lower critical field. A portion of magnetic flux is completely shielded, named as 'Meissner share' and the rest penetrates through vortices, named as 'vortices share'. We argue that the flux shares are irreversible if there is pinning. It is shown that the irreversible flux shares can be the reason for observed peculiar reversible magnetization behavior near zero field. The overall macroscopic model seems to be valuable for the analysis of fundamental physical properties as well. As an example, it is shown the origin of paramagnetic Meissner effect can be explained by the phenomenological macroscopic model.

preprint2015arXiv

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.

preprint2015arXiv

Mg coating induced superconductivity in the FeSe ultrathin film

The transition from insulator to superconductor was achieved in the non-superconducting FeSe ultrathin film via simple Mg coating technique in present work. It was found that in non-superconducting FeSe ultrathin film without Mg coating, insulating \b{eta}-Fe1-xSe phase with iron-vacancy disorders is the main phase and more likely to be the parent phase of FeSe superconducting system. Proper Mg coating on the surface of FeSe films can lead to Mg entering FeSe crystal lattice to fill up these Fe vacancies rather than replace Fe. Simultaneously, additional electron doping is introduced and the electron carrier concentration in this parent phase can be tuned, which is responsible for the SIT and evolution of superconductivity in this system. However, abnormal decrease of electron concentration was found in FeSe film with excessive Mg coating, which brings about the severe degradation in superconducting performance.

preprint2015arXiv

Observation of van Hove Singularities in Twisted Silicene Multilayers

Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing <i>sp</i><sup>2</sup> and <i>sp</i><sup>3</sup> hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (> 20<sup>o</sup>) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material.

preprint2014arXiv

Effects of Oxygen Adsorption on the Surface State of Epitaxial Silicene on Ag(111)

Epitaxial silicene, which is one single layer of silicon atoms packed in a honeycomb structure, demonstrates a strong interaction with the substrate that dramatically affects its electronic structure. The role of electronic coupling in the chemical reactivity between the silicene and the substrate is still unclear so far, which is of great importance for functionalization of silicene layers. Here, we report the reconstructions and hybridized electronic structures of epitaxial 4x4 silicene on Ag(111), which are revealed by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. The hybridization between Si and Ag results in a metallic surface state, which can gradually decay due to oxygen adsorption. X-ray photoemission spectroscopy confirms the decoupling of Si-Ag bonds after oxygen treatment as well as the relatively oxygen resistance of Ag(111) surface, in contrast to 4x4 silicene [with respect to Ag(111)]. First-principles calculations have confirmed the evolution of the electronic structure of silicene during oxidation. It has been verified experimentally and theoretically that the high chemical activity of 4x4 silicene is attributable to the Si pz state, while the Ag(111) substrate exhibits relatively inert chemical behavior.

preprint2014arXiv

Tuning the Band Gap in Silicene by Oxidation

Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.

preprint2014arXiv

Unabridged phase diagram for single-phased FeSexTe1-x thin films

A complete phase diagram and its corresponding physical properties are essential prerequisites to understand the underlying mechanism of iron based superconductivity. For the structurally simplest 11 (FeSeTe) system, earlier attempts using bulk samples have not been able to do so due to the fabrication difficulties. Here, thin FeSexTe1-x films with the Se content covering the full range were fabricated by using pulsed laser deposition method. Crystal structure analysis shows that all films retain the tetragonal structure in room temperature. Significantly, the highest superconducting transition temperature (TC = 20 K) occurs in the newly discovered domain, 0.6 - 0.8. The single-phased superconducting dome for the full Se doping range is the first of its kind in iron chalcogenide superconductors. Our results present a new avenue to explore novel physics as well as to optimize superconductors.