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Francisco Guinea

Francisco Guinea appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.opticshep-thcond-mat.dis-nn

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Published work

61 published item(s)

preprint2026arXiv

Moiré-Driven Equilibrium

Perturbations in moiré materials, such as due to substrates or strain, are common in many experiments and can significantly modify the electronic properties of the system. Here, we show that perturbations in twisted bilayer graphene tend to be transferred between the coupled Dirac cones, eventually reaching an equilibrium near the magic angle. We connect our results to experiments and show that this equilibrium behavior remains robust even when the moiré potential itself is perturbed. Our findings extend the notion of the magic angle to a more general regime governed by moiré-driven equilibrium.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of superconducting collective modes from competing pairing instabilities in single-layer NbSe$_2$

In certain unconventional superconductors with sizable electronic correlations, the availability of closely competing pairing channels leads to characteristic soft collective fluctuations of the order parameters, which leave fingerprints in many observables and allow to scrutinize the phase competition. Superconducting layered materials, where electron-electron interactions are enhanced with decreasing thickness, are promising candidates to display these correlation effects. In this work, we report the existence of a soft collective mode in single-layer NbSe$_2$, observed as a characteristic resonance excitation in high resolution tunneling spectra. This resonance is observed along with higher harmonics, its frequency $Ω/2Δ$ is anticorrelated with the local superconducting gap $Δ$, and its amplitude gradually vanishes by increasing the temperature and upon applying a magnetic field up to the critical values (T$_C$ and H$_{C2}$), which sets an unambiguous link to the superconducting state. Aided by a microscopic model that captures the main experimental observations, we interpret this resonance as a collective Leggett mode that represents the fluctuation towards a proximate f-wave triplet state, due to subleading attraction in the triplet channel. Our findings demonstrate the fundamental role of correlations in superconducting 2D transition metal dichalcogenides, opening a path towards unconventional superconductivity in simple, scalable and transferable 2D superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strain Switching in van der Waals Heterostructures triggered by a Spin-Crossover Metal Organic Framework

Van der Waals heterostructures (vdWHs) combine different layered materials with properties of interest,1 such as two-dimensional (2D) semimetals, semiconductors, magnets or superconductors. These heterostructures provide the possibility of engineering new materials with emergent functionalities that are not accessible in another way. Beyond inorganic 2D materials, layered molecular materials remain still rather unexplored, with only few examples regarding their isolation as atomically thin-layers. By a proper chemical design, the physical properties of these systems can be tuned, as illustrated by the so-called spin-crossover (SCO) compounds, in which a spin transition can be induced by applying external stimuli like light, temperature, pressure or an electric field. Here, we report on vdWHs formed by SCO layers and few-layers graphene, being its properties modified by the strain concomitant to the spin transition. These molecular/inorganic vdWHs represent the deterministic incorporation of bistable molecular layers with other 2D materials of interest in the emergent field of straintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strain-driven chiral phonons in two-dimensional hexagonal materials

Hexagonal two-dimensional materials with broken inversion symmetry (as BN or transition metal dichalcodenides) are known to sustain chiral phonons with finite angular momentum, adding a further useful degree of freedom to the extraordinary entangled (electrical, optical, magnetic and mechanical) properties of these compounds. However, because of lattice symmetry constraints, such chiral modes are constrained to the corners of the Brillouin zone, allowing little freedom for manipulating the chiral features. In this work, we show how the application of uniaxial strain leads to the existence of new chiral modes in the vicinity of the zone center. We also show that such strain-induced chiral modes, unlike the ones pinned at the K points, can be efficiently manipulated by modifying the strain itself, which determines the position of these modes in the Brillouin Zone. The results of the present paper add a new technique for the engineering of the quantum properties of two-dimensional lattices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoiré systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.

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preprint2021arXiv

Superconductivity from Repulsive Interactions in Rhombohedral Trilayer Graphene: a Kohn-Luttinger-Like Mechanism

We study the emergence of superconductivity in rhombohedral trilayer graphene due purely to the long-range Coulomb repulsion. This repulsive-interaction-driven phase in rhombohedral trilayer graphene is significantly different from those found in twisted bilayer and trilayer graphenes. In the latter case, the nontrivial momentum-space geometry of the Bloch wavefunctions leads to an effective attractive electron-electron interaction; this allows for less modulated order parameters and for spin-singlet pairing. In rhombohedral trilayer graphene, we instead find spin-triplet superconductivity with critical temperatures up to 0.15 K. The critical temperatures strongly depend on electron filling and peak where the density of states diverge. The order parameter shows a significant modulation within each valley pocket of the Fermi surface.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unconventional superconductivity due to interband polarization

We analyze in detail the superconductivity that arises in an extended Hubbard model describing a multiband system with repulsive interactions. We show that virtual interband processes induce an effective attractive interaction for small momentum transfers, a situation not found in most models of superconductivity from repulsion. This attraction can be traced back, in real space, to the presence of correlated hopping terms induced by interband polarization. We reveal this physics with both strong-coupling expansion and many-body perturbation theory, supplemented by numerical calculations. Finally, we point out interesting similarities with the problem of interacting electrons in twisted bilayer graphene, suggesting the importance of interband contribution to superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A numerical study of the rippling instability driven by electron-phonon coupling in graphene

Suspended graphene exhibits ripples of size ranging from 50 to 100 Å and height $\sim$10Å, however, their origin remains undetermined. Previous theoretical works have proposed that rippling in graphene might be generated by the coupling between the bending modes and the density of electrons. These studies theoretically proposed that in the thermodynamic limit a membrane of single layer graphene displays a lattice instability for large enough electron-phonon coupling, undergoing a phase transition from a flat phase to a rippled one. In this work we solve the elasticity equations for a finite membrane of graphene coupled to the charge distribution, modeled in the tight-binding approximation, we find that the electron-phonon coupling controls a transition from a stable flat configuration to a stable rippled phase.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Band structure and insulating states driven by the Coulomb interaction in twisted bilayer graphene

We analyze the phase diagram of twisted graphene bilayers near a magic angle. We consider the effect of the long range Coulomb interaction, treated within the self consistent Hartree-Fock approximation, and we study arbitrary band fillings. We find a rich phase diagram, with different broken symmetry phases, although tehy do not show necessarily a gap at the Fermi energy. There are non trivial effects of the electrostatic potential on the shape and the gaps of the bands in the broken symmetry phases. The results suggest that the non superconducting broken symmetry phases observed experimentally are induced by the long range exchange interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning band gaps in twisted bilayer MoS$_2$

In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge when the twist angle is sufficiently small (around 7.3$^{\circ}$). Interestingly, the band gap can be tuned up to a 2.2\% (51 meV) when the twist angle in the relaxed sample varies from 21.8$^{\circ}$ to 0.8$^{\circ}$. Furthermore, when looking at local density of states we find that the band gap varies locally along the moirè pattern due to the change in the coupling between layers at different sites. Finally, we also find that the system can suffer a transition from a semiconductor to a metal when a sufficiently strong electric field is applied. Our study can serve as a guide for the practical engineering of the TMDCs based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Direct and inverse spin Hall effect: Lorentz force and Zeeman energy

It is shown that magnetic forces as the Lorentz force, exerted on electric currents, and the force μDiv(B), exerted on electron spins at rest, account for both the transverse spin imbalance typical of spin Hall effect and the transverse charge imbalance associated with pure spin currents (inverse spin Hall effect). Considering that for stationary currents the laboratory reference frame and those for which the spin up and spin down carriers are at rest are inertial systems, one can easily find the forces exerted by the lattice on both spin sub-bands, as well as the force between sub-bands.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The emergence of one-dimensional channels in marginal-angle twisted bilayer graphene

We generalize the continuum model for Moiré structures made from twisted graphene layers, in order to include lattice relaxation and the formation of channels at very small (marginal) twist angles. We show that a precise description of the electronic structure at such small angles can be achieved by i) calculating first the relaxed atomic structure, ii) projecting the interlayer electronic hopping parameters using a suitable basis of Bloch states, and iii) increasing the number of harmonics in the continuum approximation to interlayer hopping. The results show a complex structure of quasi one dimensional states when a finite bias is applied.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Edge modes in zigzag and armchair ribbons of monolayer MoS$_2$

We explore the electronic structure, orbital character and topological aspect of a monolayer MoS$_2$ nanoribbon using tight-binding (TB) and low-energy (${\bm k}\cdot{\bm p} $) models. We obtain a mid-gap edge mode in the zigzag ribbon of monolayer MoS$_2$, which can be traced back to the topological properties of the bulk band structure. Monolayer MoS$_2$ can be considered as a valley Hall insulator. The boundary conditions at armchair edges mix the valleys on the edges, and a gap is induced in the edge modes. The spin-orbit coupling in the valence band reduces the hybridization of the bulk states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electron-phonon vertex and its influence on the superconductivity of two-dimensional metals on a piezoelectric substrate

We investigate the interaction between the electrons of a two-dimensional metal and the acoustic phonons of an underlying piezoelectric substrate. Fundamental inequalities can be obtained from general energy arguments. As a result, phonon mediated attraction can be proven to never overcome electron Coulomb repulsion, at least for long phonon wavelengths. We study the influence of these phonons on the possible pairing instabilities of a two-dimensional electron gas such as graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Enhanced superconductivity in atomically thin TaS2

The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Faraday effect in rippled graphene: Magneto-optics and random gauge fields

A beam of linearly polarized light transmitted through magnetically biased graphene can have its axis of polarization rotated by several degrees after passing the graphene sheet. This large Faraday effect is due to the action of the magnetic field on graphene's charge carriers. As deformations of the graphene membrane result in pseudomagnetic fields acting on the charge carriers, the effect of random mesoscopic corrugations (ripples) can be described as the exposure of graphene to a random pseudomagnetic field. We aim to clarify the interplay of these typically sample inherent fields with the external magnetic bias field and the resulting effect on the Faraday rotation. In principle, random gauge disorder can be identified from a combination of Faraday angle and optical spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interaction between point charges, dipoles and graphene layers

We analyse the interaction between charges and graphene layers. The electric polarisability of graphene induces a force, that can be described by an image charge. The analysis shows that graphene can be described as an imperfect conductor with a finite dielectric constant, $ε_r$, for weak coupling, and it behaves as a metal for strong fields. As a consequence, the interaction between polar molecules and graphene layer(s) tends to align the molecular dipole along the direction normal to the graphene, and quantitative estimates of the energy gain are given The strength of this interaction can be sufficient to overcome thermal effects when the molecule is close to the layer, even at room temperature. Hence, boundary effects play a significant role in determining the structure of systems such as water confined in atomically narrow van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inverse Funnel Effect of Excitons in Strained Black Phosphorus

We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength and strain-tuneable direct band gap. We compare the results to the case of molybdenum disulphide (MoS$_2$) monolayers. We find that the so-called funnel effect, i.e. the possibility of controlling exciton motion by means of inhomogeneous strains, is much stronger in few-layer BP than in MoS$_2$ monolayers and, crucially, is of opposite sign. Instead of excitons accumulating isotropically around regions of high tensile strain like in MoS$_2$, excitons in BP are pushed away from said regions. This \emph{inverse} funnel effect is moreover highly anisotropic, with much larger funnel distances along the armchair crystallographic direction, leading to a directional focusing of exciton flow. A strong inverse funnel effect could enable simpler designs of funnel solar cells, and offer new possibilities for the manipulation and harvesting of light.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Mapping the effect of defect-induced strain disorder on the Dirac states of topological insulators

We provide a detailed microscopic characterization of the influence of defects-induced disorder onto the Dirac spectrum of three dimensional topological insulators. By spatially resolved Landau-levels spectroscopy measurements, we reveal the existence of nanoscale fluctuations of both the Dirac point energy as well as of the Dirac-fermions velocity which is found to spatially change in opposite direction for electrons and holes, respectively. These results evidence a scenario which goes beyond the existing picture based on chemical potential fluctuations. The findings are consistently explained by considering the microscopic effects of local stain introduced by defects, which our model calculations show to effectively couple to topological states, reshaping their Dirac-like dispersion over a large energy range. In particular, our results indicate that the presence of microscopic spatially varying stain, inevitably present in crystals because of the random distribution of defects, effectively couple to topological states and should be carefully considered for correctly describing the effects of disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magneto-electronic properties of multilayer black phosphorus

We examine the electronic properties of 2D electron gas in black phosphorus multilayers in the presence of a perpendicular magnetic field, highlighting the role of in-plane anisotropy on various experimental quantities such as ac magneto-conductivity, screening, and magneto-plasmons. We find that resonant structures in the ac conductivity exhibits a red-shift with increasing doping due to inter-band coupling, $γ$. This arises from an extra correction term in the Landau energy spectrum proportional to $n^2γ^2$ ($n$ is Landau index), up to second order in $γ$. We found also that Coulomb interaction leads to highly anisotropic magneto-excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Orbital magnetic susceptibility of graphene and MoS2

We calculate the orbital magnetic susceptibility $χ_{\mathrm{orb}}$ for an 8-band tight-binding model of gapless and gapped graphene using Green's functions. Analogously, we study $χ_{\mathrm{orb}}$ for a $\mathrm{MoS_2}$ 12-band model. For both materials, we unravel the character of the processes involved in the magnetic response by looking at the contribution at each point of the Brillouin zone. By this, a clear distinction between intra- and interband excitations is generally possible and we are able to predict qualitative features of $χ_{\mathrm{orb}}$ only through the knowledge of the band structure. The study is complemented by comparing the magnetic response with that of 2-band lattice Hamiltonians which reduce to the Dirac and Bernevig-Hughes-Zhang (BHZ) models in the continuum limit.

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preprint2015arXiv

Strain engineering in semiconducting two-dimensional crystals

One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.

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preprint2015arXiv

Theory of strain in single-layer transition metal dichalcogenides

Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials.

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preprint2015arXiv

Topological currents in black phosphorus with broken inversion symmetry

We examine the nature of topological currents in black phosphorus when its inversion symmetry is deliberately broken. Here, the conduction and valence band edges are located at the $Γ$ point of the rectangular Brillouin zone, and they exhibit strong anisotropy along its two crystal axes. We will show below that these salient features lead to a linear transverse neutral topological currents, accompanied also by a non-linear transverse charge current at the Fermi surface. These topological currents are maximal when the in-plane electric field is applied along the zigzag crystal axes, but zero along the armchair direction.

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preprint2014arXiv

Electronic structure of spontaneously strained graphene on hexagonal Boron Nitride

Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions develop in graphene due to the moiré adhesion landscape. Simultaneously a gap opens at the Dirac point. Here we derive a simple low energy model for graphene carriers close to alignment with the substrate, taking into account spontaneous strains at equilibrium, pseudogauge fields and deformation potentials. We carry out a detailed characterisation of the modified band structure, gap, local and global density of states, and band topology in terms of physical parameters. We show that the overall electronic structure is strongly modified by the spontaneous strains.

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preprint2014arXiv

Generation and morphing of plasmons in graphene superlattices

Recent experimental studies on graphene on hexagonal Boron Nitride (hBN) have demonstrated that hBN is not only a passive substrate that ensures superb electronic properties of graphene's carriers, but that it actively modifies their massless Dirac fermion character through a periodic moiré potential. In this work we present a theory of the plasmon excitation spectrum of massless Dirac fermions in a moiré superlattice. We demonstrate that graphene-hBN stacks offer a rich platform for plasmonics in which control of plasmon modes can occur not only via electrostatic gating but also by adjusting e.g. the relative crystallographic

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preprint2014arXiv

Novel mid-infrared plasmonic properties of bilayer graphene

We study the mid-infrared plasmonic response in Bernal-stacked bilayer graphene. Unlike its monolayer counterpart, bilayer graphene accommodates optically active phonon modes and a resonant interband transition at infrared frequencies. They strongly modifies the plasmonic properties of bilayer graphene, leading to Fano-type resonances, giant plasmonic enhancement of infrared phonon absorption, narrow window of optical transparency, and a new plasmonic mode at higher energy than the classical plasmon.

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preprint2014arXiv

Plasmons and screening in monolayer and multilayer black phosphorus

Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the carrier concentration, and $β<\tfrac{1}{2}$. Screening and charge distribution in the out-of-plane direction are also studied using a non-linear Thomas-Fermi model.

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preprint2014arXiv

Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices

We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $μ$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $μ$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.

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preprint2014arXiv

Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.

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preprint2014arXiv

Spontaneous Strains and Gap in Graphene on Boron Nitride

The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an average gap in the electronic spectrum of graphene. We present a simple, but realistic model, by which the displacements, strains and spectral gap can be derived analytically from the adhesion forces between hBN and graphene. When the lattice axes of graphene and the substrate are aligned, strains reach a value of order 2\%, leading to effective magnetic fields above 100T. The combination of strains and induced scalar potential gives a sizeable contribution to the electronic gap. Commensuration effects are negligible, due to the large stiffness of graphene.

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preprint2014arXiv

Stiffening graphene by controlled defect creation

Graphene extraordinary strength, stiffness and lightness have generated great expectations towards its application in flexible electronics and as mechanical reinforcement agent. However, the presence of lattice defects, unavoidable in sheets obtained by scalable routes, might degrade its mechanical properties. Here we report a systematic study on the elastic modulus and strength of graphene with controlled density of defects. Counter intuitively, the in-plane Young modulus increases with increasing defect density up to almost twice the initial value for vacancy content of ~0.2%, turning it into the stiffest material ever reported. For higher density of vacancies, elastic modulus decreases with defect inclusion. The initial increase in Young modulus is explained in terms of a dependence of the elastic coefficients with the momentum of flexural modes predicted for 2D membranes. In contrast, the fracture strength decreases with defect density according to standard fracture continuum models. These quantitative structure-property relationships, measured in atmospheric conditions, are of fundamental and technological relevance and provide guidance for applications in which graphene mechanics represents a disruptive improvement.

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preprint2014arXiv

Substrate Sensitive Mid-Infrared Photoresponse in Graphene

We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-polaritons associated with the substrate are excited, which indirectly heat up the graphene leading to a graphene photocurrent with fixed spectral features. Models for other commonly used substrates show that the responsivity of graphene infrared photodetectors can be tailored to specific mid-IR frequency bands by the choice of the substrate.

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preprint2013arXiv

Artificial graphene as a tunable Dirac material

Artificial honeycomb lattices offer a tunable platform to study massless Dirac quasiparticles and their topological and correlated phases. Here we review recent progress in the design and fabrication of such synthetic structures focusing on nanopatterning of two-dimensional electron gases in semiconductors, molecule-by-molecule assembly by scanning probe methods, and optical trapping of ultracold atoms in crystals of light. We also discuss photonic crystals with Dirac cone dispersion and topologically protected edge states. We emphasize how the interplay between single-particle band structure engineering and cooperative effects leads to spectacular manifestations in tunneling and optical spectroscopies.

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preprint2013arXiv

Collective excitations in a large-d model for graphene

We consider a model of Dirac fermions coupled to flexural phonons to describe a graphene sheet fluctuating in dimension $2+d$. We derive the self-consistent screening equations for the quantum problem, exact in the limit of large $d$. We first treat the membrane alone, and work out the quantum to classical, and harmonic to anharmonic crossover. For the coupled electron-membrane problem we calculate the dressed two-particle propagators of the elastic and electron interactions and find that it exhibits a collective mode which becomes unstable at some wave-vector $q_{\rm c}$ for large enough coupling $g$. The saddle point analysis, exact at large $d$, indicates that this instability corresponds to spontaneous and simultaneous appearance of gaussian curvature and electron puddles. The relevance to ripples in graphene is discussed.

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preprint2013arXiv

Coupling light into graphene plasmons through surface acoustic waves

We propose a scheme for coupling laser light into graphene plasmons with the help of electrically generated surface acoustic waves. The surface acoustic wave forms a diffraction grating which allows to excite the long lived phonon-like branch of the hybridized graphene plasmon-phonon dispersion with infrared laser light. Our approach avoids patterning the graphene sheet, does not rely on complicated optical near-field techniques, and allows to electrically switch the coupling between far field radiation and propagating graphene plasmons.

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preprint2013arXiv

Electron-phonon interaction on the surface of a 3D topological insulator

We analyze the role of a Rayleigh surface phonon mode in the electron-phonon interaction at the surface of a 3D topological insulator. A strong renormalization of the phonon dispersion, leading eventually to the disappearance of Rayleigh phonons, is ruled out in the ideal case of a continuum long-wavelength limit, which is only justified if the surface is clean and defect free. The absence of backscattering for Dirac electrons at the Fermi surface is partly responsible for the reduced influence of the electron-phonon interaction. A pole in the dielectric response function due to the Rayleigh phonon dispersion could drive the electron-electron interaction attractive at low frequencies. However, the average pairing interaction within the weak coupling approach is found to be too small to induce a surface superconducting instability.

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preprint2013arXiv

Flexural mode of graphene on a substrate

Out of plane vibrations are suppressed in graphene layers placed on a substrate. These modes, in suspended samples, are relevant for the understanding of properties such as the resistivity, the thermal expansion coefficient, and other. We present a general framework for the study of the properties of out of plane modes in graphene on different substrates. We use the model to estimate the substrate induced changes in the thermal expansion coefficient, or in the temperature dependence of the resistivity.

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preprint2013arXiv

Generation of pure bulk valley current in graphene

The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations of the strains and chemical potential in the suspended region. The accompanied strain gauge fields can break the spatial mirror symmetry of the problem within each of the two inequivalent valleys, leading to a fnite valley current due to quantum pumping. An all-electrical measurement configuration is designed to detect the novel state with pure bulk valley currents.

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preprint2013arXiv

Local strain engineering in atomically thin MoS2

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

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preprint2013arXiv

Tunable phonon-induced transparency in bilayer graphene nanoribbons

In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the meta-stable level in EIT of atomic systems. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating, and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm-1, based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon non-linear optics and slow light in this novel two-dimensional material, without external optical pumping and at room temperature.

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preprint2012arXiv

Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange

For a system of two spatially separated monoatomic graphene layers encapsulated in hexagonal boron nitride, we consider the drag effect between charge carriers in the Fermi liquid regime. Commonly, the phenomenon is described in terms of an interlayer Coulomb interaction. We show that if an additional electron - electron interaction via exchange of virtual substrate phonons is included in the model, the predicted drag resistivity is modified considerably at temperatures above 150 K. The anisotropic crystal structure of boron nitride, with strong intralayer and comparatively weak interlayer bonds, is found to play an important role in this effect.

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preprint2012arXiv

Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2.

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preprint2012arXiv

Electron pumping in graphene mechanical resonators

The combination of high frequency vibrations and metallic transport in graphene makes it a unique material for nano-electromechanical devices. In this letter, we show that graphene-based nano-electromechanical devices are extremely well suited for charge pumping, due to the sensitivity of its transport coefficients to perturbations in electrostatic potential and mechanical deformations, with the potential for novel small scale devices with useful applications.

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preprint2012arXiv

Electron-hole puddles in the absence of charged impurities

It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate like quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy.

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preprint2012arXiv

Mid-infrared plasmons in scaled graphene nanostructures

Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial damping channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when damping through the emission of an optical phonon is allowed. Furthermore, the surface polar phonons in SiO2 substrate underneath the graphene nanostructures lead to a significantly modified plasmon dispersion and damping, in contrast to a non-polar diamond-like-carbon (DLC) substrate. Much reduced damping is realized when the plasmon resonance frequencies are close to the polar phonon frequencies. Our study paves the way for applications of graphene in plasmonic waveguides, modulators and detectors in an unprecedentedly broad wavelength range from sub-terahertz to mid-infrared.

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preprint2012arXiv

Non-Abelian gauge potentials in graphene bilayers

We study the effect of spatial modulations in the interlayer hopping of graphene bilayers, such as those that arise upon shearing or twisting. We show that their single-particle physics, characterized by charge accumulation and recurrent formation of zero-energy bands as the pattern period L increases, is governed by a non-Abelian gauge potential arising in the low-energy electronic theory due to the coupling between layers. We show that such gauge-type couplings give rise to a potential that, for certain discrete values of L, spatially confines states at zero energy in particular regions of the Moiré patterns. We also draw the connection between the recurrence of the flat zero-energy bands and the non-Abelian character of the potential.

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preprint2012arXiv

Odd momentum pairing and superconductivity in vertical graphene heterostructures

Vertical graphene heterostructures made up of graphene layers separated by BN spacers allow for novel ways of tuning the interactions between electrons. We study the possibility of electron pairing mediated by modified repulsive interactions. Long range intravalley and short range intervalley interactions give rise to different anisotropic phases. We show that a superconducting state with gaps of opposite signs in different valleys, an odd momentum pairing state, can exist above carrier densities of $5-10 \times 10^{13} {\rm cm}^{-2}$. The dependence of the transition temperature on the different parameters of the devices is studied in detail.

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preprint2012arXiv

Temperature dependence of the conductivity of graphene on boron nitride

The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the charge carrier mobility. We here show that for substrates made of the piezoelectric hexagonal boron nitride (hBN), in comparison to the widely used SiO$_2$, this mechanism of remote phonon scattering is --at room temperature-- weaker by almost an order of magnitude, and causes a resistivity of approximately 3\,$Ω$. This makes hBN an excellent candidate material for future graphene based electronic devices operating at room temperature.

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preprint2011arXiv

Effect of Coulomb interactions on the physical observables of graphene

We give an update of the situation concerning the effect of electron-electron interactions on the physics of a neutral graphene system at low energies. We revise old renormalization group results and the use of 1/N expansion to address questions of the possible opening of a low-energy gap, and the magnitude of the graphene fine structure constant. We emphasize the role of Fermi velocity as the only free parameter determining the transport and electronic properties of the graphene system and revise its renormalization by Coulomb interactions in the light of recent experimental evidence.

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preprint2011arXiv

Geometrical and topological aspects of graphene and related materials

Graphene, a two-dimensional crystal made of carbon atoms, provides a new and unexpected bridge between low and high-energy physics. The field has evolved very fast and very good reviews are already available in the literature. Graphene constitutes a condensed matter realization of lower dimensional quantum field theory models that were proposed to confront important -- still unresolved -- puzzles of the area: Chiral symmetry breaking and quark confinement. The new materials named topological insulators, closely related to graphene, are physical realizations of topological field theory. This article reviews some of these topics with the aim of bridging the gap and making these condensed matter issues accessible to high energy readers. The electronic interactions in the monolayer are analyzed with special emphasis on the recent experimental confirmation of some theoretical predictions. The issue of spontaneous chiral symmetry breaking in the model materials is also reviewed. Finally we give an extensive description of some recent topological aspects of graphene that allow to understand the main aspects of topological insulators.

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preprint2011arXiv

Quenching of the quantum Hall effect in graphene with scrolled edges

Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arc length of the scrolls in combination with their compact transverse size results in formation of many nonchiral transport channels in the scrolls. They short-circuit the bulk current paths and inhibit the observation of the quantized two-terminal resistance. Unlike competing theoretical proposals, this mechanism of disrupting the Hall quantization in suspended graphene is not caused by ill-chosen placement of the contacts, singular elastic strains, or a small sample size.

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preprint2011arXiv

Skipping and snake orbits of electrons: singularities and catastrophes

Near the sample edge, or a sharp magnetic field step the drift of two-dimensional electrons in a magnetic field has the form of skipping/snake orbits. We show that families of skipping/snake orbits of electrons injected at one point inside a 2D metal generically exhibit caustics folds, cusps and cusp triplets, and, in one extreme case, a section of the batterfly bifurcation. Periodic appearance of singularities along the $\pm B$-interface leads to the magneto-oscillations of nonlocal conductance in multi-terminal electronic devices.

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preprint2010arXiv

Low-energy instability of flexural phonons in graphene

We study the effect exerted by the electrons on the flexural phonons in graphene, accounting for the attractive interaction created by the exchange of electron-hole excitations. Combining the self-consistent computation of the phonon self-energy with renormalization group methods, we show that graphene has two different phases corresponding to soft and strong renormalization of the bending rigidity in the long-wavelength limit. In the first case, the system may have an intermediate scale in which the phonon dispersion is softened, but it manages finally to become increasingly rigid over large distance scales. The strongly renormalized phase is closer however to critical behavior, with an effective rigidity that becomes pinned in practice at very small values, implying a very large susceptibility for the development of a condensate of the flexural phonon field.

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preprint2010arXiv

Singular elastic strains and magnetoconductance of suspended graphene

Graphene membranes suspended off electric contacts or other rigid supports are prone to elastic strain, which is concentrated at the edges and corners of the samples. Such a strain leads to an algebraically varying effective magnetic field that can reach a few Tesla in sub-micron wide flakes. In the quantum Hall regime the interplay of the effective and the physical magnetic fields causes backscattering of the chiral edge channels, which can destroy the quantized conductance plateaus.

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preprint2007arXiv

Existence and topological stability of Fermi points in multilayered graphene

We study the existence and topological stability of Fermi points in a graphene layer and stacks with many layers. We show that the discrete symmetries (spacetime inversion) stabilize the Fermi points in monolayer, bilayer and multilayer graphene with orthorhombic stacking. The bands near $k=0$ and $ε=0$ in multilayers with the Bernal stacking depend on the parity of the number of layers, and Fermi points are unstable when the number of layers is odd. The low energy changes in the electronic structure induced by commensurate perturbations which mix the two Dirac points are also investigated.

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preprint2006arXiv

Electron-Phonon Coupling and Raman Spectroscopy in Graphene

We show that the electron-phonon coupling in graphene, in contrast with the non-relativistic two-dimensional electron gas, leads to shifts in the phonon frequencies that are non-trivial functions of the electronic density. These shifts can be measured directly in Raman spectroscopy. We show that depending whether the chemical potential is smaller (larger) than half of the phonon frequency, the frequency shift can negative (positive) relative to the neutral case (when the chemical potential is at the Dirac point), respectively. We show that the use of the static response function to calculate these shifts is incorrect and leads always to phonon softening. In samples with many layers, we find a shift proportional to the carrier concentration, and a splitting of the phonon frequencies if the charge is not homogeneously distributed. We also discuss the effects of edges in the problem.

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