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Tony Low

Tony Low appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsquant-phphysics.app-phphysics.comp-phcond-mat.othercond-mat.str-elcond-mat.supr-conmath-phmath.MP

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Published work

67 published item(s)

preprint2026arXiv

Emergence of unconventional magnetic order in strain-engineered RuO2/TiO2 superlattices

The spin ordering in RuO2 remains a highly debated topic, owing to its elusive nature, with reports ranging from a nonmagnetic ground state to signatures of unconventional magnetic order. Here we provide the first unambiguous, and direct evidence of unconventional magnetism in epitaxial, fully strained RuO2/TiO2 superlattices on TiO2 (110) substrate grown by hybrid molecular beam epitaxy. Polarized neutron reflectometry reveals a finite magnetic moment localized within the compressively strained RuO2 layers, consistent with predictions obtained from first-principles calculations. Complementary density functional theory and X-ray photoemission spectroscopy show that epitaxial strain drives the Ru 4d states toward the Fermi level, triggering a Stoner-type instability that stabilizes non-compensated magnetic order. These unique results reveal that RuO2 exhibits unconventional magnetic states under epitaxial strain, which are not accessible in bulk and establish strain engineering as a powerful route to uncover and control magnetic phases in RuO2 and related oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Twisted two-dimensional material stacks for polarization optics

The ability to control light polarization state is critically important for diverse applications in information processing, telecommunications, and spectroscopy. Here, we propose that a stack of anisotropic van der Waals materials can facilitate the building of optical elements with Jones matrices of unitary, Hermitian, non-normal, singular, degenerate, and defective classes. We show that the twisted stack with electrostatic control can function as arbitrary-birefringent wave-plate or arbitrary polarizer with tunable degree of non-normality, which in turn give access to plethora of polarization transformers including rotators, pseudorotators, symmetric and ambidextrous polarizers. Moreover, we discuss an electrostatic-reconfigurable stack which can be tuned to operate as four different polarizers and be used for Stokes polarimetry.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Convert widespread paraelectric perovskite to ferroelectrics

While nature provides a plethora of perovskite materials, only a few exhibits large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the non-polar CaTiO$_3$(CTO)structure, limiting the scope of their applications. Based on effective Hamiltonian model as well as first-principles calculations, we propose a general thin-film design method to stabilize the functional BiFeO$_3$(BFO)-type structure, which is a common metastable structure in widespread CaTiO$_3$-type perovskite oxides. It is found that the improper antiferroelectricity in CTO-type perovskite and ferroelectricity in BFO-type perovskite have distinct dependences on mechanical and electric boundary conditions, both of which involve oxygen octahedral rotation and tilt. The above difference can be used to stabilize the highly polar BFO-type structure in many CTO-type perovskite materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate tunable light-matter interaction in natural biaxial hyperbolic van der Waals heterostructures

The recent discovery of natural biaxial hyperbolicity in van der Waals crystals, such as $α$-MoO$_3$, has opened up new avenues for mid-IR nanophotonics due to their deep subwavelength phonon-polaritons. However, a significant challenge is the lack of active tunability of these hyperbolic phonon polaritons. In this work, we investigate heterostructures of graphene and $α$-MoO$_3$ for actively tunable hybrid plasmon phonon polariton modes via electrostatic gating in the mid-infrared spectral region. We observe a unique propagation direction dependent hybridization of graphene plasmon polaritons with hyperbolic phonon polaritons for experimentally feasible values of graphene chemical potential. We further report an application to tunable valley quantum interference in this system with a broad operational bandwidth due to the formation of these hybrid modes. This work presents a lithography-free alternative for actively tunable, anisotropic spontaneous emission enhancement using a sub-wavelength thick naturally biaxial hyperbolic materials.

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preprint2022arXiv

Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN

In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A perspective of twisted photonic structures

Moire superlattices-twisted van der Waals (vdW) structures with small angles-are attracting increasing attention in condensed matter physics, due to important phenomena revealed therein, including unconventional superconductivity, correlated insulating states, and ferromagnetism. Moire superlattices are typically comprised of atomic layers of vdW materials where the exotic physics arises from the quantum electronic coupling between adjacent atomic layers. Recently, moire electronics has motivated their photonic counterparts. In addition to vdW materials, twisted photonic systems can also be comprised of metamaterials, metasurfaces, and photonic crystals, mediated by interlayer electromagnetic coupling instead. The interplay between short-ranged interlayer quantum and long-ranged electromagnetic coupling in twisted structures are expected to yield rich phenomena in nano-optics. This perspective reviews recent progress in twisted structures for nanophotonics and outlooks emerging topics, opportunities, fundamental challenges, and potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Efficient domain wall motion in asymmetric magnetic tunnel junctions with vertical current flow

In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We show that as we increase the MTJ asymmetry, by considering dissimilar ferromagnetic contacts, a linear-in-voltage field-like torque behavior is accompanied by an enhancement in the domain wall displacement efficiency and a higher degree of bidirectional propagation. Our analysis is based on a combination of a quantum transport model and magnetization dynamics as described by the Landau-Lifshitz-Gilbert equation, along with comparison to the intrinsic characteristics of a benchmark in-plane current injection domain wall device.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Near-field probing of image phonon-polaritons in hexagonal boron nitride on gold crystals

Near-field mapping has been widely used to study hyperbolic phonon-polaritons in van der Waals crystals. However, an accurate measurement of the polaritonic loss remains challenging because of the inherent complexity of the near-field signal and the substrate-mediated loss. Here we demonstrate that large-area monocrystalline gold flakes, an atomically-flat low-loss substrate for image polaritons, provide a platform for precise near-field measurement of the complex propagation constant of polaritons in van der Waals crystals. As a topical example, we measure propagation loss of the image phonon-polaritons in hexagonal boron nitride, revealing that their normalized propagation length exhibits a parabolic spectral dependency. Further, we show that image phonon-polaritons exhibit up to a twice lower normalized propagation loss, while being 2.4 times more compressed compared to the case of dielectric substrate. We conclude that the monocrystalline gold flakes provide a unique nanophotonic platform for probing and exploitation of the image modes in low-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Toggling Near-field Directionality via Polarization Control of Surface Waves

Directional excitation of guidance modes is central to many applications ranging from light harvesting, optical information processing to quantum optical technology. Of paramount interest, especially, the active control of near-field directionality provides a new paradigm for the real-time on-chip manipulation of light. Here we find that for a given dipolar source, its near-field directionality can be toggled efficiently via tailoring the polarization of surface waves that are excited, for example, via tuning the chemical potential of graphene in a graphene-metasurface waveguide. This finding enables a feasible scheme for the active near-field directionality. Counterintuitively, we reveal that this scheme can transform a circular electric/magnetic dipole into a Huygens dipole in the near-field coupling. Moreover, for Janus dipoles, this scheme enables us to actively flip their near-field coupling and non-coupling faces.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Boosting quantum yields in 2D semiconductors via proximal metal plates

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton dipolar field interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed inside the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A semiclassical model accounting for the screening of the dipole-dipole interaction qualitatively captures the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Broadband Enhancement of On-chip Single Photon Extraction via Tilted Hyperbolic Metamaterials

A fundamental building block for on-chip quantum photonics is a single-photon source with high repetition rates, which can enable many applications such as high-speed quantum communication and quantum information processing. Ideally, such single photon sources would then require a large on-chip photon extraction decay rate, namely the rate of excited photons coupled into nanofibers or waveguides, over a broad spectral range. However, this goal has remained elusive till date. Here we propose a feasible scheme to enhance the on-chip photon extraction decay rate of quantum emitters, through the tilting of the optical axis of hyperbolic metamaterials with respect to the end-facet of nanofibers. Importantly, the revealed scheme is applicable to arbitrarily orientated quantum emitters over a broad spectral range, e.g., up to ~80 nm for visible light. The underlying physics relies on the emerging unique feature of hyperbolic metamaterials if their optical axis is judiciously tilted. That is, their supported high-k (i.e., wavevector) hyperbolic eigenmodes, which are intrinsically confined inside them if their optical axis is un-tilted, can now become momentum-matched with the guided modes of nanofibers, and more importantly, they can safely couple into nanofibers almost without reflection.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chiral plasmons with twisted atomic bilayers

Van der Waals heterostructures of atomically thin layers with rotational misalignments, such as twisted bilayer graphene, feature interesting structural moiré superlattices. Due to the quantum coupling between the twisted atomic layers, light-matter interaction is inherently chiral; as such, they provide a promising platform for chiral plasmons in the extreme nanoscale. However, while the interlayer quantum coupling can be significant, its influence on chiral plasmons still remains elusive. Here we present the general solutions from full Maxwell equations of chiral plasmons in twisted atomic bilayers, with the consideration of interlayer quantum coupling. We find twisted atomic bilayers have a direct correspondence to the chiral metasurface, which simultaneously possesses chiral and magnetic surface conductivities, besides the common electric surface conductivity. In other words, the interlayer quantum coupling in twisted van der Waals heterostructures may facilitate the construction of various (e.g., bi-anisotropic) atomically-thin metasurfaces. Moreover, the chiral surface conductivity, determined by the interlayer quantum coupling, determines the existence of chiral plasmons and leads to a unique phase relationship (i.e., +/-π/2 phase difference) between their TE and TM wave components. Importantly, such a unique phase relationship for chiral plasmons can be exploited to construct the missing longitudinal spin of plasmons, besides the common transverse spin of plasmons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hyperbolicity in 2D transition metal ditellurides induced by electronic bands nesting

Naturally occurring hyperbolic plasmonic media is rare, and was only recently observed in the 1T$'$ phase of WTe$_2$. We elucidate on the physical origin of this strong infrared hyperbolic response, and attribute it to band-nested anisotropic interband transitions. Such phenomenon does not occur in general anisotropic materials, at least not in their pristine state. However, band-nested anisotropic interband transitions can in principle be induced via proper electronic band nesting. We illustrate this principle and demonstrate a topological elliptic-to-hyperbolic transition in MoTe$_2$ via strain engineering, which is otherwise non-hyperbolic.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Image polaritons in boron nitride for extreme polariton confinement with low losses

Polaritons in two-dimensional materials provide extreme light confinement that is difficult to achieve with metal plasmonics. However, such tight confinement inevitably increases optical losses through various damping channels. Here we demonstrate that hyperbolic phonon polaritons in hexagonal boron nitride can overcome this fundamental trade-off. Among two observed polariton modes, featuring a symmetric and antisymmetric charge distribution, the latter exhibits lower optical losses and tighter polariton confinement. Far-field excitation and detection of this high-momenta mode becomes possible with our resonator design that can boost the coupling efficiency via virtual polariton modes with image charges that we dub image polaritons. Using these image polaritons, we experimentally observe a record-high effective index of up to 132 and quality factors as high as 501. Further, our phenomenological theory suggests an important role of hyperbolic surface scattering in the damping process of hyperbolic phonon polaritons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Plasmons and screening in finite-bandwidth 2D electron gas

The dynamical and nonlocal dielectric function of a two-dimensional electron gas (2DEG) with finite energy bandwidth is computed within random-phase approximation. For large bandwidth, the plasmon dispersion has two separate branches at small and large momenta. The large momenta branch exhibits negative quasi-flat dispersion. The two branches merge with decreasing bandwidth. We discuss how the maximum energy plasmon mode which resides at energies larger than all particle-hole continuum can potentially open a route to low-loss plasmons. Moreover, we discuss the bandwidth effects on the static screening of the charged and magnetic impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Engineering quantum interference in van der Waals heterostructures

In this paper, we present a novel route to tunable spontaneous valley coherence in heterostructures of two dimensional valleytronic materials with other layered materials hosting anisotropic polaritonic modes. We first discuss the dependence of this coherence on the conductivity tensor of the anisotropic part of a general heterostructure and on its geometrical configuration. Subsequently, we propose two implementations - one, using anisotropic plasmons in phosphorene and another with hyperbolic phonon polaritons in MoO3. In both these systems we show for the first time electrostatic tunability of the spontaneous valley coherence achieving unprecedented values of up to 80% in the near to mid infrared wavelengths at room temperature. The tunability of this valley coherence shown in these heterostructures will enable the realization of active valleytronic quantum circuitry.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic Weyl semimetals with diamond structure realized in spinel compounds

Diamond-structure materials have been extensively studied for decades, which form the foundation for most semiconductors and their modern day electronic devices. Here, we discover a e$_g$-orbital ($d_{z^2}$,$d_{x^2-y^2}$ ) model within the diamond lattice (e$_g$-diamond model) that hosts novel topological states. Specifically, the e$_g$-diamond model yields a 3D nodal cage (3D-NC), which is characterized by a $d$-$d$ band inversion protected by two types of degenerate states (i.e., e$_g$-orbital and diamond-sublattice degeneracies). We demonstrate materials realization of this model in the well-known spinel compounds (AB$_2$X$_4$), where the tetrahedron-site cations (A) form the diamond sub-lattice. An ideal half metal with one metallic spin channel formed by well-isolated and half-filled e$_g$-diamond bands, accompanied by a large spin gap (4.36 eV) is discovered in one 4-2 spinel compound (VMg$_2$O$_4$), which becomes a magnetic Weyl semimetal when spin-orbit coupling effect is further considered. Our discovery greatly enriches the physics of diamond structure and spinel compounds, opening a door to their application in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mid-infrared polarized emission from black phosphorus light-emitting diodes

The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $μ$m, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells, InSb/AlInSb, GaInAsSbP pentanary alloys, and intersubband transitions in group III-V compounds. These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS$_2$) heterojunction emits polarized light at $λ$ = 3.68 $μ$m with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1$\%$ and $\sim3\times10^{-2}\%$, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nonretarded edge plasmon-polaritons in anisotropic two-dimensional materials

By an integral equation approach to the time-harmonic classical Maxwell equations, we describe the dispersion in the nonretarded frequency regime of the edge plasmon-polariton (EPP) on a semi-infinite flat sheet. The sheet has an arbitrary, physically admissible, tensor valued and spatially homogeneous conductivity, and serves as a model for a family of two-dimensional conducting materials. We formulate a system of integral equations for the electric field tangential to the sheet in a homogeneous and isotropic ambient medium. We show how this system is simplified via a length scale separation. This view entails the quasi-electrostatic approximation, by which the tangential electric field is replaced by the gradient of a scalar potential, $φ$. By the Wiener-Hopf method, we solve an integral equation for $φ$ in some generality. The EPP dispersion relation comes from the elimination of a divergent limiting Fourier integral for $φ$ at the edge. We connect the existence, or lack thereof, of the EPP dispersion relation to the index for Wiener-Hopf integral equations, an integer of topological character. We indicate that the values of this index may express an asymmetry due to the material anisotropy in the number of wave modes propagating on the sheet away from the edge with respect to the EPP direction of propagation. We discuss extensions such as the setting of two semi-infinite, coplanar sheets. Our theory forms a generalization of the treatment by Volkov and Mikhailov (1988 Sov. Phys. JETP 67 1639).

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preprint2019arXiv

Plasmonic-based gas sensing with graphene nanoribbons

The main challenge to exploiting plasmons for gas vibrational mode sensing is the extremely weak infrared absorption of gas species. In this work, we explore the possibility of trapping free gas molecules via surface adsorption, optical, or electrostatic fields to enhance gas-plasmon interactions and to increase plasmon sensing ability. We discuss the relative strengths of these trapping forces and found gas adsorption in a typical nanoribbon array plasmonic setup produces measurable dips in optical extinction of magnitude 0.1 % for gas concentration of about parts per thousand level.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Large-scale defects hidden inside a topological insulator grown onto a 2D substrate

Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. However, a major obstacle to realizing the promise of TIs is the thin-film materials' quality, which lags behind that of epitaxially grown semiconductors. In contrast to the latter systems, the Bi-chalcogenides form by van der Waals epitaxy, which allows them to successfully grow onto substrates with various degrees of lattice mismatch. This flexibility enables the integration of TIs into heterostructures with emerging materials, including two-dimensional materials. However, understanding and controlling local features and defects within the TI films is critical to achieving breakthrough device performance. Here, we report observations and modeling of large-scale structural defects in (Bi,Sb)$_2$Te$_3$ films grown onto hexagonal BN, highlighting unexpected symmetry-breaking rotations within the films and the coexistence of a second phase along grain boundaries. Using first-principles calculations, we show that these defects could have consequential impacts on the devices that rely on these TI films, and therefore they cannot be ignored.

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preprint2016arXiv

Anisotropic 2D materials for tunable hyperbolic plasmonics

Motivated by the recent emergence of a new class of anisotropic 2D materials, we examine their electromagnetic modes and demonstrate that a broad class of the materials can host highly directional hyperbolic plasmons. Their propagation direction can be manipulated on-the-spot by gate doping, enabling hyperbolic beams reflection, refraction and bending. The realization of these natural 2D hyperbolic media opens up a new avenue in dynamic control of hyperbolic plasmons not possible in the 3D version.

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preprint2016arXiv

Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching

We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer materials, Group V elemental monolayer materials, transition metal dichalcogenides (TMD) and transition metal trichalcogenides (TMT) reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterojunction for 903 different possible combination of these 2D materials which establishes a periodic table of heterojunctions.

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preprint2016arXiv

Broadband achromatic anomalous mirror in near-IR and visible frequency range

The anomalous achromatic mirror operating in near-IR and visible frequency range was designed using an array of metal-insulator-metal (MIM) resonators. An incident wave interacting with MIM resonator experiences phase shift that is equal to the optical path travelled by the gap plasmon, excited by the wave. The phase gradient along the mirror surface is created through the difference in plasmons optical paths in resonators of different lengths. In the frequency region well below the plasma frequency of the metal, the phase gradient is a linear function of frequency, and thus the mirror operates in achromatic regime, i.e. reflection angle does not depend on the radiation frequency. Using silver-air-silver resonators, we predicted that the mirror can steer normally incident beam to angles as large as 40$^{\circ}$ with high radiation efficiency (exceeding 98 $\%$) and small Joule losses (below 10 $\%$).

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preprint2016arXiv

Layer Tunable Third-Harmonic Generation in Multilayer Black Phosphorus

Black phosphorus has been the subject of growing interest due to its unique band structure that is both layer dependent and anisotropic. While many have studied the linear optical response of black phosphorus, the nonlinear response has remained relatively unexplored. Here we report on the observation of third-harmonic generation in black phosphorus using an ultrafast near-IR laser and measure Chi(3) experimentally for the first time. It was found that the third-harmonic emission is highly anisotropic, dependent on the incident polarization, and varies strongly with the number of layers present due to signal depletion and phase-matching conditions.

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preprint2016arXiv

Pumping electrons in graphene to the $\mathbf{M}$-point in the Brillouin zone: The emergence of anisotropic plasmons

We consider the existence of plasmons in a non-equilibrium situation where electrons from the valence band of graphene are pumped to states in the Brillouin zone around the $\mathbf{M}$-point by a high intensity UV electromagnetic field. The resulting out-of-equilibrium electron gas is later probed by a weak electromagnetic field of different frequency. We show that the optical properties of the system and the dispersion of the plasmons are strongly anisotropic, depending on the pumping radiation properties: its intensity, polarization, and frequency. This anisotropy has its roots in the saddle-like nature of the electronic dispersion relation around that particular point in the Brillouin zone. It is found that despite the strong anisotropy, the dispersion of the plasmons scales with the square root of the wave number but is characterized an effective Fermi energy, which depends on the properties of the pumping radiation. Our calculations go beyond the usual Dirac cone approximation taking the full band structure of graphene into account. This is a necessary condition for discussing plasmons at the $\mathbf{M}$-point in the Brillouin zone.

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preprint2015arXiv

Magneto-electronic properties of multilayer black phosphorus

We examine the electronic properties of 2D electron gas in black phosphorus multilayers in the presence of a perpendicular magnetic field, highlighting the role of in-plane anisotropy on various experimental quantities such as ac magneto-conductivity, screening, and magneto-plasmons. We find that resonant structures in the ac conductivity exhibits a red-shift with increasing doping due to inter-band coupling, $γ$. This arises from an extra correction term in the Landau energy spectrum proportional to $n^2γ^2$ ($n$ is Landau index), up to second order in $γ$. We found also that Coulomb interaction leads to highly anisotropic magneto-excitons.

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preprint2015arXiv

Mobility anisotropy in monolayer black phosphorus due to charged impurities

We study the charged impurity limited mobility in black phosphorus, a highly anisotropic layered material. We compute the mobility within the Boltzmann transport equation under detailed balance condition, and taking into account the anisotropy in transport and electronic structure. For carrier densities accessible in experiments, we obtained an anisotropy ratio of 3 ~ 4 at zero temperature, two-folds larger than that observed in experiments on multilayers samples. We discuss also how the anisotropy depends on carrier density and impurity distribution.

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preprint2015arXiv

Multilayer black phosphorus as a versatile mid-infrared electro-optic material

We investigate the electro-optic properties of black phosphorus (BP) thin films for optical modulation in the mid-infrared frequencies. Our calculation indicates that an applied out-of-plane electric field may lead to red-, blue-, or bidirectional shift in BP's absorption edge. This is due to the interplay between the field-induced quantum-confined Franz-Keldysh effect and the Pauli-blocked Burstein-Moss shift. The relative contribution of the two electro-absorption mechanisms depends on doping range, operating wavelength, and BP film thickness. For proof-of concept, simple modulator configuration with BP overlaid over a silicon nanowire is studied. Simulation result shows that operating BP in the quantum-confined Franz-Keldysh regime can enable improved maximal attainable absorption as well as power efficiency compared to its graphene counterpart.

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preprint2015arXiv

Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.

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preprint2015arXiv

Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays

Interactions between localized plasmons in proximal nanostructures is a well-studied phenomenon. Here we explore plasmon plasmon interactions in connected extended systems. Such systems can now be easily produced using graphene. Specifically we employ the finite element method to study such interactions in graphene nanoribbon arrays with a periodically modulated electrochemical potential or number of layers. We find a rich variation in the resulting plasmonic resonances depending on the dimensions and the electrochemical potentials (doping) of the nanoribbon segments and the involvement of transverse and longitudinal plasmon interactions. Unlike predictions based of the well-known "orbital hybridization model", the energies of the resulting hybrid plasmonic resonances of the extended system can lie between the energies of the plasmons of the individual components. The results demonstrate the wide range tunability of the graphene plasmons and can help to design structures with desired spectra, which can be used to enhance optical fields in the infrared region of the electromagnetic spectrum.

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preprint2015arXiv

Topological currents in black phosphorus with broken inversion symmetry

We examine the nature of topological currents in black phosphorus when its inversion symmetry is deliberately broken. Here, the conduction and valence band edges are located at the $Γ$ point of the rectangular Brillouin zone, and they exhibit strong anisotropy along its two crystal axes. We will show below that these salient features lead to a linear transverse neutral topological currents, accompanied also by a non-linear transverse charge current at the Fermi surface. These topological currents are maximal when the in-plane electric field is applied along the zigzag crystal axes, but zero along the armchair direction.

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preprint2015arXiv

Tunable light-matter interaction and the role of hyperbolicity in graphene-hBN system

Hexagonal boron nitride (hBN) is a natural hyperbolic material which can also accommodate highly dispersive surface phonon-polariton modes. In this paper, we examine theoretically the mid-infrared optical properties of graphene-hBN heterostructures derived from their coupled plasmon-phonon modes. We found that the graphene plasmon couples differently with the phonons of the two Reststrahlen bands, owing to their different hyperbolicity. This also leads to distinctively different interaction between an external quantum emitter and the plasmon-phonon modes in the two bands, leading to substantial modification of its spectrum. The coupling to graphene plasmons allows for additional gate tunability in the Purcell factor, and narrow dips in its emission spectra.

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preprint2014arXiv

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

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preprint2014arXiv

Gate-controlled mid-infrared light bending with aperiodic graphene nanoribbons array

Graphene plasmonic nanostructures enable subwavelength confinement of electromagnetic energy from the mid-infrared down to the terahertz frequencies. By exploiting the spectrally varying light scattering phase at vicinity of the resonant frequency of the plasmonic nanostructure, it is possible to control the angle of reflection of an incoming light beam. We demonstrate, through full-wave electromagnetic simulations based on Maxwell equations, the electrical control of the angle of reflection of a mid-infrared light beam by using an aperiodic array of graphene nanoribbons, whose widths are engineered to produce a spatially varying reflection phase profile that allows for the construction of a far-field collimated beam towards a predefined direction.

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preprint2014arXiv

Graphene Plasmonics for Terahertz to Mid-Infrared Applications

In recent years, we have seen a rapid progress in the field of graphene plasmonics, motivated by graphene's unique electrical and optical properties, tunabilty, long-lived collective excitation and their extreme light confinement. Here, we review the basic properties of graphene plasmons; their energy dispersion, localization and propagation, plasmon-phonon hybridization, lifetimes and damping pathways. The application space of graphene plasmonics lies in the technologically significant, but relatively unexploited terahertz to mid-infrared regime. We discuss emerging and potential applications, such as modulators, notch filters, polarizers, mid-infrared photodetectors, mid-infrared vibrational spectroscopy, among many others.

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preprint2014arXiv

Graphene Side Gate Engineering

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore myriads of typical side gated devices such as symmetric dual side gates and asymmetric single side gate biasing, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.

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preprint2014arXiv

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.

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preprint2014arXiv

Nonlocal Electromagnetic Response of Graphene Nanostructures

Nonlocal electromagnetic effects of graphene arise from its naturally dispersive dielectric response. We present semi-analytical solutions of nonlocal Maxwell's equations for graphene nano-ribbons array with features around 100 nm, where we found prominent departures from its local response. Interestingly, the nonlocal corrections are stronger for light polarization parallel to the ribbons, which manifests as additional broadening of the Drude peak. For the perpendicular polarization case, nonlocal effects lead to blue-shifts of the plasmon peaks. These manifestations provide a physical measure of nonlocal effects, and we quantify their dependence on ribbon width, doping and wavelength.

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preprint2014arXiv

Novel mid-infrared plasmonic properties of bilayer graphene

We study the mid-infrared plasmonic response in Bernal-stacked bilayer graphene. Unlike its monolayer counterpart, bilayer graphene accommodates optically active phonon modes and a resonant interband transition at infrared frequencies. They strongly modifies the plasmonic properties of bilayer graphene, leading to Fano-type resonances, giant plasmonic enhancement of infrared phonon absorption, narrow window of optical transparency, and a new plasmonic mode at higher energy than the classical plasmon.

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preprint2014arXiv

Origin of photoresponse in black phosphorus photo-transistors

We study the origin of photocurrent generated in doped multilayer BP photo-transistors, and find that it is dominated by thermally driven thermoelectric and bolometric processes. The experimentally observed photocurrent polarities are consistent with photo-thermal processes. The photo-thermoelectric current can be generated up to a $μ$m away from the contacts, indicating a long thermal decay length. With an applied source-drain bias, a photo-bolometric current is generated across the whole device, overwhelming the photo-thermoelectric contribution at a moderate bias. The photo-responsivity in the multilayer BP device is two orders of magnitude larger than that observed in graphene.

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preprint2014arXiv

Plasmons and screening in monolayer and multilayer black phosphorus

Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the carrier concentration, and $β<\tfrac{1}{2}$. Screening and charge distribution in the out-of-plane direction are also studied using a non-linear Thomas-Fermi model.

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preprint2014arXiv

Substrate Sensitive Mid-Infrared Photoresponse in Graphene

We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-polaritons associated with the substrate are excited, which indirectly heat up the graphene leading to a graphene photocurrent with fixed spectral features. Models for other commonly used substrates show that the responsivity of graphene infrared photodetectors can be tailored to specific mid-IR frequency bands by the choice of the substrate.

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preprint2014arXiv

Tunable optical properties of multilayers black phosphorus thin films

Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, doping, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra.

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preprint2014arXiv

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high doping levels, the Zeeman shift of the charged exciton increases to $\mp$ 0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons.

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preprint2013arXiv

Generation of pure bulk valley current in graphene

The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations of the strains and chemical potential in the suspended region. The accompanied strain gauge fields can break the spatial mirror symmetry of the problem within each of the two inequivalent valleys, leading to a fnite valley current due to quantum pumping. An all-electrical measurement configuration is designed to detect the novel state with pure bulk valley currents.

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preprint2013arXiv

Photocurrent in graphene harnessed by tunable intrinsic plasmons

Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations.

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preprint2013arXiv

Tunable phonon-induced transparency in bilayer graphene nanoribbons

In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the meta-stable level in EIT of atomic systems. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating, and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm-1, based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon non-linear optics and slow light in this novel two-dimensional material, without external optical pumping and at room temperature.

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preprint2012arXiv

Contact-induced negative differential resistance in short-channel graphene FETs

In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium Green's function (NEGF) simulations and a simpler semianalytical ballistic model that captures the essential physics. This NDR phenomenon is due to a transport mode bottleneck effect induced by the graphene Dirac point in the different device regions, including the contacts. NDR is found to occur only when the gate biasing produces an n-p-n or p-n-p polarity configuration along the channel, for both positive and negative drain-source voltage sweep. In addition, we also explore the impact on the NDR effect of contact-induced energy broadening in the source and drain regions and a finite contact resistance.

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preprint2012arXiv

Cooling of photoexcited carriers in graphene by internal and substrate phonons

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.

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preprint2012arXiv

Deformation and scattering in graphene over substrate steps

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced doping, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements.

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preprint2012arXiv

Electron pumping in graphene mechanical resonators

The combination of high frequency vibrations and metallic transport in graphene makes it a unique material for nano-electromechanical devices. In this letter, we show that graphene-based nano-electromechanical devices are extremely well suited for charge pumping, due to the sensitivity of its transport coefficients to perturbations in electrostatic potential and mechanical deformations, with the potential for novel small scale devices with useful applications.

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preprint2012arXiv

Mid-infrared plasmons in scaled graphene nanostructures

Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial damping channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when damping through the emission of an optical phonon is allowed. Furthermore, the surface polar phonons in SiO2 substrate underneath the graphene nanostructures lead to a significantly modified plasmon dispersion and damping, in contrast to a non-polar diamond-like-carbon (DLC) substrate. Much reduced damping is realized when the plasmon resonance frequencies are close to the polar phonon frequencies. Our study paves the way for applications of graphene in plasmonic waveguides, modulators and detectors in an unprecedentedly broad wavelength range from sub-terahertz to mid-infrared.

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preprint2012arXiv

Photoconductivity of biased graphene

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-induced bolometric effect dominate the photoresponse due to hot photocarrier generation and subsequent lattice heating through electron-phonon cooling channels respectively. The measured photocurrent displays polarity reversal as it alternates between these two mechanisms in a backgate voltage sweep. Our analysis yields elevated electron and phonon temperatures, with the former an order higher than the latter, confirming that hot electrons drive the photovoltaic response of homogeneous graphene near the Dirac point.

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preprint2012arXiv

Quantum behavior of graphene transistors near the scaling limit

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity and of the on/off current ratio, are investigated.

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preprint2012arXiv

Structure and electronic transport in graphene wrinkles

Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes. Quantum transport calculations show that conductance through these collapsed wrinkle structures is limited mainly by a density-of-states bottleneck and by interlayer tunneling across the collapsed bilayer region. Also through systematic measurements across large numbers of devices with wide folded wrinkles, we find a distinct anisotropy in their electrical resistivity, consistent with our transport simulations. These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics.

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preprint2011arXiv

Connectivity of edge and surface states in topological insulators

The edge states of a two-dimensional quantum spin Hall (QSH) insulator form a one-dimensional helical metal which is responsible for the transport property of the QSH insulator. Conceptually, such a one-dimensional helical metal can be attached to any scattering region as the usual metallic leads. We study the analytical property of the scattering matrix for such a conceptual multiterminal scattering problem in the presence of time reversal invariance. As a result, several theorems on the connectivity property of helical edge states in two-dimensional QSH systems as well as surface states of three-dimensional topological insulators are obtained. Without addressing real model details, these theorems, which are phenomenologically obtained, emphasize the general connectivity property of topological edge/surface states from the mere time reversal symmetry restriction.

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preprint2011arXiv

Pseudo-potential Band Structure Calculation of InSb Ultra-thin Films and its application to assess the n-Metal-Oxide-Semiconductor Transistor Performance

Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Γ$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtained the important electronic structure and transport parameters, such as effective mass and valley energy minimum, of InSb thin film as a function of film thickness. Our calculations reveal that the 'effective mass' of $Γ$ valley electrons increases with the scaling down of the film thickness. We also provide an assessment of nanoscale InSb thin film devices using Non-Equilibrium Green's Function under the effective mass framework in the ballistic regime.

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preprint2011arXiv

Scaling of the energy gap in pattern-hydrogenated graphene

Recent experiments show that a substantial energy gap in graphene can be induced via patterned hydrogenation on an iridium substrate. Here, we show that the energy gap is roughly proportional to $\sqrt{N_{H}}/N_{C}$ when disorder is accounted for, where $N_H$ and $N_C$ denote concentration of hydrogen and carbon atoms, respectively. The dispersion relation, obtained through calculation of the momentum-energy resolved density of states, is shown to agree with previous angle-resolved photoemission spectroscopy results. Simulations of electronic transport in finite size samples also reveal a similar transport gap, up to 1eV within experimentally achievable $\sqrt{N_{H}}/N_{C}$ value.

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preprint2011arXiv

Signatures of disorder in the minimum conductivity of graphene

Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomaterial under common experimental conditions is of critical importance for developing graphene-based nanoscale devices. We present a comprehensive experimental and theoretical study on the influence of edge disorder and bulk disorder on the minimum conductivity of graphene ribbons. For the first time, we discovered a strong non-monotonic size scaling behavior featuring a peak and saturation minimum conductivity. Through extensive numerical simulations and analysis, we are able to attribute these features to the amount of edge and bulk disorder in graphene devices. This study elucidates the quantum transport mechanisms in realistic experimental graphene systems, which can be used as a guideline for designing graphene-based nanoscale devices with improved performance.

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preprint2011arXiv

Substrate Gating of Contact Resistance in Graphene Transistors

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry can be modulated by the bottom gate. In this letter, we explain this observation by postulating the presence of an effective thin interfacial dielectric layer between the metal contact and the underlying graphene. Electrical results from quantum transport calculations accounting for this modified electrostatics corroborate well with the experimentally measured contact resistances. Our study indicates that the engineering of metal- graphene interface is a crucial step towards reducing the contact resistance for high performance graphene transistors.

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preprint2010arXiv

Gate-controlled Guiding of Electrons in Graphene

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create electronic analogs of optical devices having both positive and negative indices of refraction. Here, we use gate-controlled density with both p and n carrier types to demonstrate the analog of the fiber-optic guiding in graphene. Two basic effects are investigated: (1) bipolar p-n junction guiding, based on the principle of angle-selective transmission though the graphene p-n interface, and (2) unipolar fiber-optic guiding, using total internal reflection controlled by carrier density. Modulation of guiding efficiency through gating is demonstrated and compared to numerical simulations, which indicates that interface roughness limits guiding performance, with few-nanometer effective roughness extracted. The development of p-n and fiber-optic guiding in graphene may lead to electrically reconfigurable wiring in high-mobility devices.

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preprint2010arXiv

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especially the magnetoresistance, which is found to be lower compared to earlier predictions. The interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to explore the tunneling barrier design issues.

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preprint2010arXiv

Strain-induced pseudo-magnetic field for novel graphene electronics

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained graphene flakes of sizes of 100nm, we examine possible means of exploiting this effect for practical electronics and valleytronics devices. First, we found that elastic backscattering at rough edges leads to the formation of well defined transport gaps of order 100meV under moderate maximum strain of 10%. Second, the application of a real magnetic field induced a separation, in space and energy, of the states arising from different valleys, leading to a way of inducing bulk valley polarization which is insensitive to short range scattering.

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