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Andres Castellanos-Gomez

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.ins-det physics.ed-ph cond-mat.supr-con physics.optics cond-mat.other

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preprint2023arXiv

Paper-based Flexible Supercapacitors with drawn van der Waals materials

Two-dimensional (2D) materials are widely used in various applications due to their extraordinary properties. In particular, their electrochemical stability, low electrical resistance, and huge specific surface area make them very interesting active materials for supercapacitors. Herein, flexible, biodegradable, and low-cost supercapacitors are introduced in a very simple way based on hand-drawing pencil traces or -rubbing molybdenum disulfide (MoS2), titanium trisulfide (TiS3) and franckeite traces on the paper. Results demonstrate that pencil-drawn paper has higher capacitance performance (~6.39 F/g) among the suggested electrodes. Interestingly, the introduced MoS2/pencil, TiS3/pencil, and franckeite/pencil drawn paper electrodes reveal dramatic improvements with long cyclic life thanks to the occurrence of synergetic effects and higher available active cites within the heterostructures. Moreover, the assembled symmetric solid-state supercapacitors retain their performance even under applied bending, indicating their excellent potential for wearable/flexible applications.

preprint2022arXiv

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing

Paper offers a low-cost and widely available substrate for electronics. It posses alternative characteristics to silicon, as it shows low density and high-flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-fabricate perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green, by increasing the bromide content on MAPb(I$_{1-x}$Br$_x$)$_3$ perovskite alloys. The devices show a fast and efficient response. The best performances are observed for the pure I and Br perovskite compositions, with a maximum responsivity of 376 mA/W on the MAPbBr$_3$ device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offer for the development of low-cost, biodegradable and easy-to-fabricate devices.

preprint2022arXiv

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA/W. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.

preprint2020arXiv

A system for the deterministic transfer of 2D materials under inert environmental conditions

The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N2 of Ar gloveboxes that require the use of very thick gloves to operate within the chamber or the implementation of several motorized micro-manipulators. Here, we set up a deterministic transfer system for 2D materials within a gloveless anaerobic chamber. Unlike other setups based on over-pressurized gloveboxes, in our system the operator can manipulate the 2D materials within the chamber with bare hands. This experimental setup allows us to exfoliate 2D materials and to deterministically place them at a desired location with accuracy in a controlled O2-free and very low humidity (<2% RH) atmosphere. We illustrate the potential of this system to work with air-sensitive 2D materials by comparing the stability of black phosphorus and perovskite flakes inside and outside the anaerobic chamber.

preprint2020arXiv

A system to test 2D optoelectronic devices in high vacuum

The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such 'all-surface materials' present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires measurement systems operating in high-vacuum. However, conventional optoelectronic probe-station testing systems are are not compatible with high vacuum operation and vacuum-compatible versions are rather expensive. Here, we present a high-vacuum system specifically designed to test electronic and optoelectronic devices based on 2D materials. This system can be implemented with low budget and it is mostly based on the assembly of commercially available standard vacuum and optic components. Despite the simplicity of this system we demonstrate full capabilities to characterize optoelectronic devices in a broad range of wavelengths with fast pumping/venting speed and possibility of modulating the device temperature (room temperature to ~150deg).

preprint2020arXiv

An inexpensive system for the deterministic transfer of 2D materials

The development of systems for the deterministic transfer of two-dimensional (2D) materials have undoubtedly contributed to a great advance in the 2D materials research. In fact, they have made it possible to fabricate van der Waals heterostructures and 2D materials-based devices with complex architectures. Nonetheless, as far as we know, the amount of papers in the literature providing enough details to reproduce these systems by other research groups is very scarce in the literature. Moreover, these systems typically require the use of expensive optical and mechanical components hampering their applicability in research groups with low budget. Here we demonstrate how a deterministic placement system for 2D materials set up with full capabilities can be implemented under 900 Eur which can be easily implemented in low budget labs and educational labs.

preprint2020arXiv

Biaxial strain tuning of interlayer excitons in bilayer MoS2

We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 +- 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).

preprint2020arXiv

Direct transformation of crystalline MoO$_3$ into few-layers MoS$_2$

We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300x300 um$^2$ with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

preprint2020arXiv

Engineering symmetry breaking in two-dimensional layered materials

Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications.

preprint2020arXiv

Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain

The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The band gap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ~200 meV/%. We further characterize the effect of biaxial strain on the electrical properties of the InSe devices. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ~450-1000, ~5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe band gap also translates in a strain-induced redshift of the spectral response of our InSe photodetectors with ΔEcut-off ~173 meV at a rate of ~360 meV/% of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.

preprint2020arXiv

InSe Schottky diodes based on van der Waals contacts

Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier.

preprint2020arXiv

InSe: a two-dimensional semiconductor with superior flexibility

Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young's modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

preprint2020arXiv

Microheater actuators as a versatile platform for strain engineering in 2D materials

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64 % and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 um/deg, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.

preprint2020arXiv

MoS$_2$-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

preprint2020arXiv

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

preprint2020arXiv

Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters.

preprint2020arXiv

Superlattices based on van der Waals 2D materials

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodical perturbation, each component contributing with different characteristics. Furthermore, in a 2D materials-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D materials based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D materials-based superlattices and we describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications for each type of superlattices.

preprint2020arXiv

Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré

Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability.

preprint2020arXiv

The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation in thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity values reported in the literature for thin InSe photodetectors. By performing optoelectronic measurements on thin InSe-based photodetectors operated under different environmental conditions we find that the photoresponsivity, the response time and the photocurrent power dependency are strongly correlated in this material. This observation indicates that the photogating effect plays an imporant role for thin InSe flakes, and it is the dominant mechanism in the ultra-high photoresponsivity of pristine InSe devices. In addition, when exposing the pristine InSe photodetectors to the ambient environment we observe a fast and irreversible change in the photoresponse, with a decrease in the photoresponsivity accompanied by an increase of the operating speed. We attribute this photodetector performance change (upon atmospheric exposure) to the decrease in the density of the traps present in InSe, due to the passivation of selenium vacancies by atmospheric oxygen species. This passivation is accompanied by a downward shift of the InSe Fermi level and by a decrease of the Fermi level pinning, which leads to an increase of the Schottky barrier between Au and InSe. Our study reveals the important role of traps induced by defects in tailoring the properties of devices based on 2D materials and offers a controllable route to design and functionalize thin InSe photodetectors to realize devices with either ultrahigh photoresposivity or fast operation speed.

preprint2020arXiv

Thickness identification of thin InSe by optical microscopy methods

Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate.

preprint2020arXiv

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.

preprint2019arXiv

Tailored Graphenic Structures Directly Grown on Titanium Oxide Boost the Interfacial Charge Transfer

The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct synthesis of tailored graphenic structures by using Plasma Assisted Chemical Vapour Deposition that present a clean junction with the prototypical titanium oxide (110) surface. Chemical analysis of the interface indicates chemical bonding between both materials. Photocurrent measurements under UV light illumination manifest that the charge transfer across the interface is efficient. Moreover, the influence of the synthesis atmosphere, gas precursor (C2H2) and diluents (Ar, O2), on the interface and on the structure of the as-grown graphenic material is assessed. The inclusion of O2 promotes vertical growth of partially oxidized carbon nanodots/rods with controllable height and density. The deposition with Ar results in continuous graphenic films with low resistivity (6.8x10-6 ohm x m). The synthesis protocols developed here are suitable to produce tailored carbon-semiconductor structures on a variety of practical substrates as thin films, pillars or nanoparticles.

preprint2016arXiv

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy

We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.

preprint2016arXiv

Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization

We present an easy drop-casting based functionalization of MoS2-based photodetectors that results in an enhancement of the photoresponse of about four orders of magnitude, reaching responsivities up to 100 A/W. The functionalization is technologically trivial, air-stable, fully reversible and reproducible, and opens the door to the combination of 2D-materials with molecular dyes for the development of high performance photodetectors.

preprint2016arXiv

Enhanced superconductivity in atomically thin TaS2

The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.

preprint2016arXiv

Environmental Effects in Mechanical Properties of Few-layer Black Phosphorus

We report on the mechanical properties of few-layer black phosphorus (BP) nanosheets, in high vacuum and as a function of time of exposure to atmospheric conditions [1]. BP flakes with thicknesses ranging from 4 to 30 nm suspended over circular holes are characterized by nanoindentations using an atomic force microscope tip. From measurements in high vacuum an elastic modulus of 46+/-10 GPa and breaking strength of 2.4+/-1 GPa are estimated. Both magnitudes are independent of the thickness of the flakes. Our results show that the exposure to air has substantial influence in the mechanical response of flakes thinner than 6 nm but small effects on thicker flakes.

preprint2016arXiv

Folded MoS2 layers with reduced interlayer coupling

We study molybdenum disulfide (MoS2) structures generated by folding single- and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence emission yield. We additionally find that folded single-layer MoS2 structures show a contribution to photoluminescence spectra of both neutral and charged excitons, which is a characteristic feature of single-layer MoS2 that has not been observed in multilayer MoS2. The results presented here open the door to fabrication of multilayered MoS2 samples with high optical absorption while maintaining the advantageous enhanced photoluminescence emission of single-layer MoS2 by controllably twisting the MoS2 layers.

preprint2016arXiv

Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres

In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells.

preprint2016arXiv

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

preprint2016arXiv

Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3

The effect of quantum confinement in the optical absorption spectra of atomically thin α-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated α-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors.

preprint2016arXiv

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2) - molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 uA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.

preprint2016arXiv

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance.

preprint2016arXiv

Why all the fuss about 2D semiconductors?

Graphene is no longer alone; a family of atomically thin 2D semiconductors has emerged. Optoelectronics and photonics applications are in their experimental infancy but the future holds much promise.

preprint2015arXiv

Black phosphorus: narrow gap, wide applications

The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensional, in the nanoscience and nanotechnology community. In this Perspective we critically analyze the reasons behind the surge of experimental and theoretical works on this novel two-dimensional material. We believe that the fact that black phosphorus band gap value spans over a wide range of the electromagnetic spectrum that was not covered by any other two-dimensional material isolated to date (with remarkable industrial interest such as thermal imaging, thermoelectrics, fiber optics communication, photovoltaics, etc), its high carrier mobility, its ambipolar field-effect and its rather unusual in-plane anisotropy drew the attention of the scientific community towards this two-dimensional material. Here we also review the current advances, the future directions and the challenges in this young research field.

preprint2015arXiv

Electronic bandgap and exciton binding energy of layered semiconductor TiS3

We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature.

preprint2015arXiv

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier.

preprint2015arXiv

Environmental instability of few-layer black phosphorus

We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of moisture from air. We find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes. Interestingly, flakes can be etched down to single layer (phosphorene) thicknesses. BP's strong affinity for water greatly modifies the performance of fabricated field-effect transistors (FETs) measured in ambient conditions. Upon exposure to air, we differentiate between two timescales for doping of BP FET transfer characterisitcs: a short timescale (minutes) in which a shift in the threshold voltage occurs due to physisorbed oxygen and nitrogen, and a long timescale (hours) in which p-type doping occurs from water absorption. Continuous measurements of BP FETs in air reveal eventual degradation and break-down of the channel material after several days due to the layer-by-layer etching process.

preprint2015arXiv

Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors

Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, due to the strong photogating effect, these direct-band gap, multi-layer phototransistors produce ultra-high gains of (9.8 +- 2.5) x 10^4 A/W and inferred detectivities of (3.3 +- 0.8) x 10^13 Jones, putting In2Se3 amongst the most sensitive 2D materials for photodetection studied to date.

preprint2015arXiv

High-Q Tantalum Oxide Nanomechanical Resonators by Laser-Oxidation of TaSe2

Controlling the strain in two-dimensional materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by laser-oxidation of nano-drumhead resonators made out of tantalum diselenide (TaSe2), a layered 2D material belonging to the metal dichalcogenides. Prior to the study of their mechanical properties with a laser interferometer, we checked the oxidation and crystallinity of the freely-suspended tantalum oxide in a high-resolution electron microscope. We show that the stress of tantalum oxide resonators increase by 140 MPa (with respect to pristine TaSe2 resonators) which causes an enhancement of quality factor (14 times larger) and resonance frequency (9 times larger) of these resonators.

preprint2015arXiv

Mechanical manipulation and exfoliation of boron nitride flakes by micro-plowing with an AFM tip

We demonstrate a simple method to manipulate and exfoliate thick hexagonal boron nitride (h-BN) flakes using an atomic force microscope (AFM) cantilever and tip mounted to a micromanipulator stage. Thick flakes of tens to hundreds of nanometers can be thinned down to large area, few-layer and monolayer flakes. We characterize the resulting thinned-down flakes using AFM and Raman spectroscopy. This technique is extendable to other two dimensional, van der Waals materials.

preprint2015arXiv

Mechanics of freely-suspended ultrathin layered materials

The study of atomically thin two-dimensional materials is a young and rapidly growing field. In the past years, a great advance in the study of the remarkable electrical and optical properties of 2D materials fabricated by exfoliation of bulk layered materials has been achieved. Due to the extraordinary mechanical properties of these atomically thin materials, they also hold a great promise for future applications such as flexible electronics. For example, this family of materials can sustain very large deformations without breaking. Due to the combination of small dimensions, high Young's modulus and high crystallinity of 2D materials, they have attracted the attention of the field of nanomechanical systems as high frequency and high quality factor resonators. In this article, we review experiments on static and dynamic response of 2D materials. We provide an overview and comparison of the mechanics of different materials, and highlight the unique properties of these thin crystalline layers. We conclude with an outlook of the mechanics of 2D materials and future research directions such as the coupling of the mechanical deformation to their electronic structure.

preprint2015arXiv

Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers

In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to ultraviolet (UV). These measurements have allowed to observe and identify 41 peaks, among which 22 have not been previously experimentally observed for this compound, characterizing the existence of different resonant excitation conditions for the different excitation wavelengths. This has also included the first analysis of resonant Raman spectra that are achieved using UV excitation conditions. In addition, the analysis of atomically thin MoS2 layers has corroborated the higher potential of UV resonant Raman scattering measurements for the non destructive assessment of 2 dimensional MoS2 samples. Analysis of the relative integral intensity of the additional first and second order peaks measured under UV resonant excitation conditions is proposed for the non destructive characterization of the thickness of the layers, complementing previous studies based on the changes of the peak frequencies.

preprint2015arXiv

Photocurrent generation with two-dimensional van der Waals semiconductors

Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10\%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.

preprint2015arXiv

Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27 +- 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of -32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications.

preprint2015arXiv

Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging

The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-dimensional materials. Here we study the optical absorption of single- and few-layer molybdenum disulfide (MoS2) in the spectral range from 1.24 eV to 3.22 eV (385 nm to 1000 nm) by developing a hyperspectral imaging technique that allows one to probe the optical properties with diffraction limited spatial resolution. We find hyperspectral imaging very suited to study indirect bandgap semiconductors, unlike photoluminescence that only provides high luminescence yield for direct gap semiconductors. Moreover, this work opens the door to study the spatial variation of the optical properties of other two-dimensional systems, including non-semiconducting materials where scanning photoluminescence cannot be employed.

preprint2015arXiv

Strain engineering in semiconducting two-dimensional crystals

One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.

preprint2015arXiv

Strain induced bang-gap engineering in layered $\text{TiS}_3$

By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the electronic band gap of layered TiS$_3$ can be modified for monolayer, bilayer and bulk material by inducing either hydrostatic pressure or strain. In addition, we find that the monolayer and bilayer exhibits a transition from a direct to indirect gap when the strain is increased in the direction of easy transport. The ability to control the band gap and its nature can have an impact in the use of TiS$_3$ for optical applications. We verify our prediction via optical absorption experiments that present a band gap increase of up to 10\% upon tensile stress application along the easy transport direction.

preprint2015arXiv

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 K to 570 K, due to the anharmonic vibrations of the lattice which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors such as MoS2, MoSe2, WSe2 or black phosphorus (BP). This marked temperature dependence of the Raman could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a non-invasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to a lower interlayer coupling in the nanosheets.

preprint2015arXiv

Thermoelectric power of bulk black-phosphorus

The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40 % while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work demonstrates the feasibility of black-phosphorus in thermoelectric applications, such as thermal energy scavenging, which typically require devices with high performance at temperatures above room temperature.

preprint2015arXiv

TiS3 transistors with tailored morphology and electrical properties

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.

preprint2014arXiv

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

Deterministic transfer of two-dimensional crystals constitutes a crucial step towards the fabrication of heterostructures based on artificial stacking of two-dimensional materials. Moreover, control on the positioning of two-dimensional crystals facilitates their integration in complex devices, which enables the exploration of novel applications and the discovery of new phenomena in these materials. Up to date, deterministic transfer methods rely on the use of sacrificial polymer layers and wet chemistry to some extent. Here, we develop an all-dry transfer method that relies on viscoelastic stamps and does not employ any wet chemistry step. This is found very advantageous to freely suspend these materials as there are no capillary forces involved in the process. Moreover, the whole fabrication process is quick, efficient, clean, and it can be performed with high yield.

preprint2014arXiv

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors

Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm2/V s and current ON/OFF ratio larger than 103. Upon illumination, the black phosphorus transistors show response to excitation wavelengths from the visible up to 940 nm and rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W and it could be drastically enhanced by engineering a detector based on a PN junction. The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetection across the visible and near-infrared part of the electromagnetic spectrum.

preprint2014arXiv

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves.

preprint2014arXiv

Isolation and characterization of few-layer black phosphorus

Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Raman spectroscopy and transmission electron microscopy in a fast and reliable way. Moreover, we demonstrate that the exfoliated flakes are highly crystalline and that they are stable even in free-standing form through Raman spectroscopy and transmission electron microscopy measurements. A strong thickness dependence of the band structure is found by density functional theory calculations. The exciton binding energy, within an effective mass approximation, is also calculated for different number of layers. Our computational results for the optical gap are consistent with preliminary photoluminescence results on thin flakes. Finally, we study the environmental stability of black phosphorus flakes finding that the flakes are very hydrophilic and that long term exposure to air moisture etches black phosphorus away. Nonetheless, we demonstrate that the aging of the flakes is slow enough to allow fabrication of field-effect transistors with strong ambipolar behavior. Density functional theory calculations also give us insight into the water-induced changes of the structural and electronic properties of black phosphorus.

preprint2014arXiv

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms: the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of two larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by e.g. an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizeable thermal gradient upon illumination.

preprint2014arXiv

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN junction, typically defined by ionic dopants in a semiconductor. In atomically thin semiconductors, the doping level can be controlled by the field-effect without need of implanting dopants in the lattice, which makes 2D semiconductors prospective materials to implement electrically tunable PN junctions. However, most 2D semiconducting materials do not show ambipolar P-type and N-type field-effect transport, necessary to realize PN junctions. Few-layer black phosphorus is a recently isolated 2D semiconductor that presents a direct bandgap, high mobility, current on/off ratio and ambipolar operation. Here, we fabricate few-layer black phosphorus (b-P) field-effect transistors with split bottom gates and crystalline hexagonal boron nitride (h-BN) dielectric. We demonstrate electrostatic control of the local charge carrier type and density above each gate in the device, tuning its electrical behaviour from metallic to rectifying. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltage, which we attribute to the separation of electron-hole pairs driven by the internal electric field at the junction region. Due to the small bandgap of the material, we observe photocurrents and photovoltages for illumination wavelengths up to 940 nm, attractive for energy harvesting applications in the near-infrared region

preprint2014arXiv

Single-layer MoS2 mechanical resonators

Here, we demonstrate the fabrication of single-layer MoS2 mechanical resonators. The fabricated resonators have fundamental resonance frequencies in the order of 10 MHz to 30 MHz (depending on their geometry) and their quality factor is about ~55 at room temperature in vacuum. The dynamical properties clearly indicate that monolayer MoS2 membranes are in the membrane limit (i.e., tension dominated), in contrast to their thicker counterparts, which behave as plates. We also demonstrate clear signatures of nonlinear behaviour of our atomically thin membranes, thus providing a starting point for future investigations on the nonlinear dynamics of monolayer nanomechanical resonators.

preprint2014arXiv

Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates

We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS2 crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS2 flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS2 crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions.

preprint2014arXiv

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination, the TiS3 NR-FETs present an ultrahigh photoresponse of 2910 A/W and fast rise/fall times of ~4 ms. In addition, we measure cutoff frequencies (f3dB) up to 1000 Hz. The strong combination of ultrahigh sensitivity all along the visible spectrum and fast time response of TiS3 nanoribbon transistors put them among the best nanoscale photodetectors to date.

preprint2013arXiv

A simple method to characterize the electrical and mechanical properties of micro-fibers

A procedure to characterize the electrical and mechanical properties of micro-fibers is presented here. As the required equipment can be found in many teaching laboratories, it can be carried out by physics and mechanical/electrical engineering students. The electrical resistivity, mass density and Young's modulus of carbon micro-fibers have been determined using this procedure, obtaining values in very good agreement with the reference values. The Young's modulus has been obtained by measuring the resonance frequency of carbon fiber based cantilevers. In this way, one can avoid common approaches based on tensile or bending tests which are difficult to implement for microscale materials. Despite the simplicity of the experiments proposed here, they can be used to trigger in the students interest on the electrical and mechanical properties of microscale materials.

preprint2013arXiv

Large and tunable photo-thermoelectric effect in single-layer MoS2

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photo-thermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that, by an external electric field, can be tuned between -4x10^2 uV/K and -1x10^5 uV/K. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

preprint2013arXiv

Local strain engineering in atomically thin MoS2

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

preprint2013arXiv

Periodic spatial variation of the electron-phonon interaction in epitaxial graphene on Ru(0001

We have performed low temperature scanning tunnelling spectroscopy (STS) measurements on graphene epitaxially grown on Ru(0001). An inelastic feature, related to the excitation of a vibrational breathing mode of the graphene lattice, was found at 360 meV. The change in the differential electrical conductance produced by this inelastic feature, which is associated with the electron-phonon interaction strength, varies spatially from one position to other of the graphene supercell. This inhomogeneity in the electronic properties of graphene on Ru(0001) results from local variations of the carbon-ruthenium interaction due to the lattice mismatch between the graphene and the Ru(0001) lattices.

preprint2013arXiv

The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2

We quantitatively study the Raman and photoluminescence (PL) emission from single layer molybdenum disulfide (MoS2) on dielectric (SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film) and conducting substrates (Au and few-layer graphene). We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the A1g Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoS2-based vertical heterostructures and represent the first step in ad-hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

preprint2012arXiv

A simple strobe to study high-order harmonics and multifrequency oscillations in mechanical resonators

A simple strobe setup with potential to study higher-order eigenmodes and multifrequency oscillations in micromechanical resonators is described. It requires standard equipment, commonly found in many laboratories, and it can thus be employed for public demonstrations of mechanical resonances. Moreover, the work presented here can be used by undergraduate students and/or teachers to prepare practical works in laboratory courses at physics or engineering universities. The dynamics of a micromachined cantilever is analysed as an example. In fact, using our stroboscopic setup, the first and the second flexural eigenmodes as well as a multifrequency oscillation composed by a superposition of both modes have been successfully filmed with a conventional optical microscope equipped with a digital camera.

preprint2012arXiv

Calibration of piezoelectric positioning actuators using a reference voltage-to-displacement transducer based on quartz tuning forks

We use a piezoelectric quartz tuning fork to calibrate the displacement of ceramic piezoelectric scanners which are widely employed in scanning probe microscopy. We measure the static piezoelectric response of a quartz tuning fork and find it to be highly linear, non-hysteretic and with negligible creep. These performance characteristics, close to those of an ideal transducer, make quartz transducers superior to ceramic piezoelectric actuators. Furthermore, quartz actuators in the form of a tuning fork have the advantage of yielding static displacements comparable to those of local probe microscope scanners. We use the static displacement of a quartz tuning fork as a reference to calibrate the three axis displacement of a ceramic piezoelectric scanner. Although this calibration technique is a non-traceable method, it can be more versatile than using calibration grids because it enables to characterize the linear and non-linear response of a piezoelectric scanner in a broad range of displacements, spanning from a fraction of a nanometer to hundreds of nanometers. In addition, the creep and the speed dependent piezoelectric response of ceramic scanners can be studied in detail.

preprint2012arXiv

Carbon-fiber tips for scanning probe microscopes and molecular electronics experiments

We fabricate and characterize carbon-fiber tips for their use in combined scanning tunneling and force microscopy based on piezoelectric quartz tuning fork force sensors. An electrochemical fabrication procedure to etch the tips is used to yield reproducible sub-100-nm apex. We also study electron transport through single-molecule junctions formed by a single octanethiol molecule bonded by the thiol anchoring group to a gold electrode and linked to a carbon tip by the methyl group. We observe the presence of conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction.

preprint2012arXiv

Elastic properties of freely suspended MoS2 nanosheets

We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of these nanosheets is extremely high (E = 0.33 TPa), comparable to that of graphene oxide, and the deflections are reversible up to tens of nanometers.

preprint2012arXiv

Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2.

preprint2012arXiv

Highly reproducible low temperature scanning tunnelling microscopy and spectroscopy with in situ prepared tips

An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are performed onto the sputtered cluster to mechanically anneal the tip apex and thus to ensure the stability of the tip. The efficiency of this method is confirmed by comparing the topography and spectroscopy data acquired with either unprepared or in situ prepared tips on epitaxial graphene grown on Ru (0001). We demonstrate that the use of in situ prepared tips increases the stability of the scanning tunneling images and the reproducibility of the spectroscopic measurements.

preprint2012arXiv

Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

Single-layer MoS2 is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS2 is an indirect bandgap semiconductor similar to silicon, with a gap of 1.2 eV, and therefore deterministic preparation of single MoS2 layers is a crucial step towards exploiting the large direct bandgap of monolayer MoS2 in electronic, optoelectronic, and photovoltaic applications. Although mechanical and chemical exfoliation methods can be used to obtain high quality MoS2 single-layers, the lack of control in the thickness, shape, size, and position of the flakes limits their usefulness. Here we present a technique for controllably thinning multilayered MoS2 down to a single-layer two-dimensional crystal using a laser. We generate single layers in arbitrary shapes and patterns with feature sizes down to 200 nm, and show that the resulting two-dimensional crystals have optical and electronic properties comparable to that of pristine exfoliated MoS2 single layers.

preprint2012arXiv

Mechanical properties of freely suspended atomically thin dielectric layers of mica

We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young's modulus is high (190 GPa), in agreement with the bulk value, which indicates that the exfoliation procedure employed to fabricate these nanolayers does not introduce a noticeable amount of defects. Additionally, ultrathin mica shows low pre-strain and can withstand reversible deformations up to tens of nanometers without breaking. The low pre-tension and high Young's modulus and breaking force found in these ultrathin mica layers demonstrates their prospective use as a complement for graphene in applications requiring flexible insulating materials or as reinforcement in nanocomposites.

preprint2012arXiv

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

We fabricate freely suspended nanosheets of MoS2 which are characterized by quantitative optical microscopy and high resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young's modulus and the initial pre-tension of the nanosheets are determined by performing a nanoscopic version of a bending test experiment. MoS2 sheets show high elasticity and an extremely high Young's modulus (0.30 TPa, 50% larger than steel). These results make them a potential alternative to graphene in applications requiring flexible semiconductor materials.

preprint2012arXiv

Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy

The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing thousands of scanning tunneling spectroscopy measurements we determine that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy band gap of 0.4 eV around the Fermi level. We find that although the plasma treatment modifies the surface topography in a non-reversible way, the change in the electronic properties can be reversed by a moderate thermal annealing and the samples can be hydrogenated again yielding a similar, but slightly reduced, semiconducting behavior after the second hydrogenation.

preprint2012arXiv

Strong and tunable mode coupling in carbon nanotube resonators

The non-linear interaction between two mechanical resonances of the same freely suspended carbon nanotube resonator is studied. We find that in the Coulomb blockade regime, the non-linear modal interaction is dominated by single-electron-tunneling processes, and that the mode-coupling parameter can be tuned with the gate voltage, allowing both mode softening and mode stiffening behavior. This is in striking contrast to tension-induced mode coupling in strings, where the coupling parameter is positive and gives rise to a stiffening of the mode. The strength of the mode coupling in carbon nanotubes in the Coulomb blockade regime is observed to be six orders of magnitude larger than the mechanical mode coupling in micromechanical resonators.

preprint2011arXiv

Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene

We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally, we show that few-layer graphene flakes can be deposited on top of a previously transferred mica flake. Our transfer method relies on viscoelastic stamps, as those used for soft lithography. A Raman spectroscopy study shows that such an all-dry deposition technique yields cleaner and higher quality flakes than conventional wet-transfer procedures based on lithographic resists.

preprint2011arXiv

Carbon tips as electrodes for single-molecule junctions

We study electron transport through single-molecule junctions formed by an octanethiol molecule bonded with the thiol anchoring group to a gold electrode and the opposing methyl endgroup to a carbon tip. Using the scanning tunneling microscope based break junction technique, we measure the electrical conductance of such molecular junctions. We observe the presence of well-defined conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction.

preprint2011arXiv

Force-gradient-induced mechanical dissipation of quartz tuning fork force sensors used in atomic force microscopy

We have studied the dynamics of quartz tuning fork resonators used in atomic force microscopy taking into account mechanical energy dissipation through the attachment of the tuning fork base. We find that the tuning fork resonator quality factor changes even for the case of a purely elastic sensor-sample interaction. This is due to the effective mechanical imbalance of the tuning fork prongs induced by the sensor-sample force gradient which in turn has an impact on the dissipation through the attachment of the resonator base. This effect may yield a measured dissipation signal that can be different to the one exclusively related to the dissipation between the sensor and the sample. We also find that there is a second order term in addition to the linear relationship between the sensor-sample force gradient and the resonance frequency shift of the tuning fork that is significant even for force gradients usually present in atomic force microscopy which are in the range of tens of N/m.

preprint2011arXiv

Spatially resolved electronic inhomogeneities of graphene due to subsurface charges

We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential difference measurements using electrostatic force microscopy permit us to obtain the average charge density but it does not provide enough resolution to identify individual charges. We find that the tunneling current decay constant, which is related to the local tunneling barrier height, enables one to probe the electronic properties of graphene distorted at the nanometer scale by individual charged impurities. We observe that such inhomogeneities do not show long range ordering and their surface density obtained by direct counting is consistent with the value obtained by macroscopic charge density measurements. These microscopic perturbations of the carrier density significantly alter the electronic properties of graphene, and their characterization is essential for improving the performance of graphene based devices.

preprint2010arXiv

Carbon fibre tips for scanning probe microscopy based on quartz tuning fork force sensors

We report the fabrication and the characterization of carbon fibre tips for their use in combined scanning tunnelling and force microscopy based on piezoelectric quartz tuning fork force sensors. We find that the use of carbon fibre tips results in a minimum impact on the dynamics of quartz tuning fork force sensors yielding a high quality factor and consequently a high force gradient sensitivity. This high force sensitivity in combination with high electrical conductivity and oxidation resistance of carbon fibre tips make them very convenient for combined and simultaneous scanning tunnelling microscopy and atomic force microscopy measurements. Interestingly, these tips are quite robust against occasionally occurring tip crashes. An electrochemical fabrication procedure to etch the tips is presented that produces a sub-100 nm apex radius in a reproducible way which can yield high resolution images.

preprint2010arXiv

Dynamics of quartz tuning fork force sensors used in scanning probe microscopy

We have performed an experimental characterization of the dynamics of oscillating quartz tuning forks which are being increasingly used in scanning probe microscopy as force sensors. We show that tuning forks can be described as a system of coupled oscillators. Nevertheless, this description requires the knowledge of the elastic coupling constant between the prongs of the tuning fork, which has not yet been measured. Therefore tuning forks have been usually described within the single oscillator or the weakly coupled oscillators approximation that neglects the coupling between the prongs. We propose three different procedures to measure the elastic coupling constant: an opto-mechanical method, a variation of the Cleveland method and a thermal noise based method. We find that the coupling between the quartz tuning fork prongs has a strong influence on the dynamics and the measured motion is in remarkable agreement with a simple model of coupled harmonic oscillators. The precise determination of the elastic coupling between the prongs of a tuning fork allows to obtain a quantitative relation between the resonance frequency shift and the force gradient acting at the free end of a tuning fork prong.

preprint2010arXiv

Optical identification of atomically thin dichalcogenide crystals

We present a systematic study of the optical contrast of diselenide (NbSe2) and molybdenum disulphide (MoS2) flakes deposited onto Si wafers with a thermally grown SiO2 layer. We measure the optical contrast of flakes whose thickness ranges from 200 layers down to a monolayer using different illumination wavelengths in the visible spectrum. The refractive index of these thin crystals has been obtained from the measured optical contrast dependence on the flake thickness by using a simple model based on the Fresnel law. With the refractive index of these NbSe2 and MoS2 crystallites, the optical microscopy data can be quantitatively analyzed to determine the thickness of the flakes in a fast and non-destructive way.

Andres Castellanos-Gomez

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82 published item(s)

Paper-based Flexible Supercapacitors with drawn van der Waals materials

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

A system for the deterministic transfer of 2D materials under inert environmental conditions

A system to test 2D optoelectronic devices in high vacuum

An inexpensive system for the deterministic transfer of 2D materials

Biaxial strain tuning of interlayer excitons in bilayer MoS2

Direct transformation of crystalline MoO$_3$ into few-layers MoS$_2$

Engineering symmetry breaking in two-dimensional layered materials

Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain

InSe Schottky diodes based on van der Waals contacts

InSe: a two-dimensional semiconductor with superior flexibility

Microheater actuators as a versatile platform for strain engineering in 2D materials

MoS$_2$-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

Superlattices based on van der Waals 2D materials

Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré

The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors

Thickness identification of thin InSe by optical microscopy methods

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

Tailored Graphenic Structures Directly Grown on Titanium Oxide Boost the Interfacial Charge Transfer

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy

Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization

Enhanced superconductivity in atomically thin TaS2

Environmental Effects in Mechanical Properties of Few-layer Black Phosphorus

Folded MoS2 layers with reduced interlayer coupling

Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

Why all the fuss about 2D semiconductors?

Black phosphorus: narrow gap, wide applications

Electronic bandgap and exciton binding energy of layered semiconductor TiS3

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

Environmental instability of few-layer black phosphorus

Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors

High-Q Tantalum Oxide Nanomechanical Resonators by Laser-Oxidation of TaSe2

Mechanical manipulation and exfoliation of boron nitride flakes by micro-plowing with an AFM tip

Mechanics of freely-suspended ultrathin layered materials

Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers

Photocurrent generation with two-dimensional van der Waals semiconductors

Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging

Strain engineering in semiconducting two-dimensional crystals

Strain induced bang-gap engineering in layered $\text{TiS}_3$

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Thermoelectric power of bulk black-phosphorus

TiS3 transistors with tailored morphology and electrical properties

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Isolation and characterization of few-layer black phosphorus

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

Single-layer MoS2 mechanical resonators

Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

A simple method to characterize the electrical and mechanical properties of micro-fibers

Large and tunable photo-thermoelectric effect in single-layer MoS2

Local strain engineering in atomically thin MoS2

Periodic spatial variation of the electron-phonon interaction in epitaxial graphene on Ru(0001

The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2

A simple strobe to study high-order harmonics and multifrequency oscillations in mechanical resonators

Calibration of piezoelectric positioning actuators using a reference voltage-to-displacement transducer based on quartz tuning forks

Carbon-fiber tips for scanning probe microscopes and molecular electronics experiments

Elastic properties of freely suspended MoS2 nanosheets

Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

Highly reproducible low temperature scanning tunnelling microscopy and spectroscopy with in situ prepared tips

Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

Mechanical properties of freely suspended atomically thin dielectric layers of mica

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy