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Rafael Roldán

Rafael Roldán appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phcond-mat.softphysics.optics

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Published work

19 published item(s)

preprint2020arXiv

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inverse Funnel Effect of Excitons in Strained Black Phosphorus

We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength and strain-tuneable direct band gap. We compare the results to the case of molybdenum disulphide (MoS$_2$) monolayers. We find that the so-called funnel effect, i.e. the possibility of controlling exciton motion by means of inhomogeneous strains, is much stronger in few-layer BP than in MoS$_2$ monolayers and, crucially, is of opposite sign. Instead of excitons accumulating isotropically around regions of high tensile strain like in MoS$_2$, excitons in BP are pushed away from said regions. This \emph{inverse} funnel effect is moreover highly anisotropic, with much larger funnel distances along the armchair crystallographic direction, leading to a directional focusing of exciton flow. A strong inverse funnel effect could enable simpler designs of funnel solar cells, and offer new possibilities for the manipulation and harvesting of light.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus

We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventually a semiconductor to semimetal transition takes place. This nontrivial phase is characterized by the emergence of a pair of Dirac points in the spectrum. As a consequence, the Landau levels are not equidistant anymore, but follow the $\varepsilon_n\propto \sqrt{nB}$ characteristic of Dirac crystals as graphene. By using the Kubo-Bastin formula in the context of the kernel polynomial method, we compute the Hall conductivity of the system. We obtain a $σ_{xy}\propto 2n$ quantization of the Hall conductivity in the gapped phase (standard quantum Hall effect regime), and a $σ_{xy}\propto 4(n+1/2)$ quantization in the semimetalic phase, characteristic of Dirac systems with non-trivial topology.

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preprint2016arXiv

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

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preprint2015arXiv

Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration and non-linear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

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preprint2015arXiv

Magneto-electronic properties of multilayer black phosphorus

We examine the electronic properties of 2D electron gas in black phosphorus multilayers in the presence of a perpendicular magnetic field, highlighting the role of in-plane anisotropy on various experimental quantities such as ac magneto-conductivity, screening, and magneto-plasmons. We find that resonant structures in the ac conductivity exhibits a red-shift with increasing doping due to inter-band coupling, $γ$. This arises from an extra correction term in the Landau energy spectrum proportional to $n^2γ^2$ ($n$ is Landau index), up to second order in $γ$. We found also that Coulomb interaction leads to highly anisotropic magneto-excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Screening and plasmons in pure and disordered single- and bilayer black phosphorus

We study collective plasmon excitations and screening of disordered single- and bilayer black phosphorus beyond the low energy continuum approximation. The dynamical polarizability of phosphorene is computed using a tight-binding model that properly accounts for the band structure in a wide energy range. Electron-electron interaction is considered within the Random Phase Approximation. Damping of the plasmon modes due to different kinds of disorder, such as resonant scatterers and long-range disorder potentials, is analyzed. We further show that an electric field applied perpendicular to bilayer phosphorene can be used to tune the dispersion of the plasmon modes. For sufficiently large electric field, the bilayer BP enters in a topological phase with a characteristic plasmon spectrum, which is gaped in the armchair direction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain engineering in semiconducting two-dimensional crystals

One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.

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preprint2015arXiv

Theory of strain in single-layer transition metal dichalcogenides

Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials.

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preprint2014arXiv

Plasmons and screening in monolayer and multilayer black phosphorus

Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the carrier concentration, and $β<\tfrac{1}{2}$. Screening and charge distribution in the out-of-plane direction are also studied using a non-linear Thomas-Fermi model.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Local strain engineering in atomically thin MoS2

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Screening and Collective Modes in Disordered Graphene Antidot Lattices

The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $π$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differences of GALs with respect to single-layer graphene (SLG). Our results show that, in addition to the well-understood bulk plasmon in doped samples, inter-band plasmons appear in GALs. We further show that the static screening properties of undoped and doped GALs are quantitatively different from SLG.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2.

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preprint2012arXiv

Electronic Properties of Disordered Graphene Antidot Lattices

Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect placement of identical perforations, a situation not likely to occur in the laboratory. Here, we present a systematic study of the effects of disorder in GALs. We consider both geometric and chemical disorder, and evaluate the density-of-states as well as the optical conductivity of disordered GALs. The theoretical method is based on an efficient algorithm for solving the time-dependent Schr{ö}dinger equation in a tight-binding representation of the graphene sheet [S. Yuan et al., Phys. Rev. B 82, 115448 (2010)], which allows us to consider GALs consisting of 6400 $\times$ 6400 carbon atoms. The central conclusion for all kinds of disorder is that the gaps found for pristine GALs do survive at a considerable amount of disorder, but disappear for very strong disorder. Geometric disorder is more detrimental to gap formation than chemical disorder. The optical conductivity shows a low-energy tail below the pristine GAL band gap due to disorder-introduced transitions.

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preprint2012arXiv

Polarization of graphene in a strong magnetic field beyond the Dirac cone approximation

In this paper we study the excitation spectrum of graphene in a strong magnetic field, beyond the Dirac cone approximation. The dynamical polarizability is obtained using a full $π$-band tight-binding model where the effect of the magnetic field is accounted for by means of the Peierls substitution. The effect of electron-electron interaction is considered within the random phase approximation, from which we obtain the dressed polarization function and the dielectric function. The range of validity of the Landau level quantization within the continuum approximation is studied, as well as the non-trivial quantization of the spectrum around the Van Hove singularity. We further discuss the effect of disorder, which leads to a smearing of the absorption peaks, and temperature, which activates additional inter-Landau level transitions induced by the Fermi distribution function.

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preprint2011arXiv

Excitation spectrum and high energy plasmons in single- and multi-layer graphene

In this paper we study the excitation spectrum of single- and multi-layer graphene beyond the Dirac cone approximation. The dynamical polarizability of graphene is computed using a full $π$-band tight-binding model, considering the possibility of inter-layer hopping in the calculation. The effect of electron-electron interaction is considered within the random phase approximation. We further discuss the effect of disorder in the spectrum, which leads to a smearing of the absorption peaks. Our results show a redshift of the $π$-plasmon dispersion of single-layer graphene with respect to graphite, in agreement with experimental results. The inclusion of inter-layer hopping in the kinetic Hamiltonian of multi-layer graphene is found to be very important to properly capture the low energy region of the excitation spectrum.

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preprint2011arXiv

Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene

We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a π-band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC stacking order, due to the opening of a gap at the Dirac point, while the ABA-stacked trilayer graphene remains metallic. We discuss our results in the context of recent electronic transport experiments. Furthermore, we argue that the expressions obtained can be useful in the analysis of future measurements of cyclotron resonance of electrons and holes in trilayer graphene.

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preprint2011arXiv

Optical conductivity of disordered graphene beyond the Dirac cone approximation

In this paper we systemically study the optical conductivity and density of states of disorded graphene beyond the Dirac cone approximation. The optical conductivity of graphene is computed by using the Kubo formula, within the framework of a full π-band tight-binding model. Different types of non-correlated and correlated disorders are considered, such as random or Gaussian potentials, random or Gaussian nearest-neighbor hopping parameters, randomly distributed vacancies or their clusters, and random adsorbed hydrogen atoms or their clusters. For a large enough concentration of resonant impurities, a new peak in the optical conductivity is found, associated to transitions between the midgap states and the Van Hove singularities of the main π-band. We further discuss the effect of doping on the spectrum, and find that small amounts of resonant impurities are enough to obtain a background contribution to the conductivity in the infra-red part of the spectrum, in agreement with recent experiments.

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preprint2011arXiv

Suppression of anharmonicities in crystalline membranes by external strain

In practice, physical membranes are exposed to a certain amount of external strain (tension or compression), due to the environment where they are placed. As a result, the behavior of the phonon modes of the membrane is modified. We show that anharmonic effects in stiff two-dimensional membranes are highly suppressed under the application of tension. For this, we consider the anharmonic coupling between bending and stretching modes in the self-consistent screening approximation (SCSA), and compare the obtained height-height correlation function in the SCSA to the corresponding harmonic propagator. The elasticity theory results are compared to atomistic Monte Carlo simulations for a graphene membrane under tension. We find that, while rather high values of strain are needed to avoid anharmonicity in soft membranes, strain fields less than 1% are enough to suppress all the anharmonic effects in stiff membranes, as graphene.

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