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A. W. Holleitner

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Published work

19 published item(s)

preprint2016arXiv

Imaging Spectroscopic Ellipsometry of Mono- and Few-layer MoS2

Micromechanically exfoliated mono- and multilayers of molybdenum disulfide (MoS2) are investigated by spectroscopic imaging ellipsometry. In combination with knife edge illumination, MoS2 flakes can be detected and classified on arbitrary flat and also transparent substrates with a lateral resolution down to 1 to 2 um. The complex dielectric functions from mono- and trilayer MoS2 are presented. They are extracted from a multilayer model to fit the measured ellipsometric angles employing an anisotropic and an isotropic fit approach. We find that the energies of the critical points of the optical constants can be treated to be independent of the utilized model, whereas the magnitude of the optical constants varies with the used model. The anisotropic model suggests a maximum absorbance for a MoS2 sheet supported by sapphire of about 14 % for monolayer and of 10 % for trilayer MoS2. Furthermore, the lateral homogeneity of the complex dielectric function for monolayer MoS2 is investigated with a spatial resolution of 2 um. Only minor fluctuations are observed. No evidence for strain, for a significant amount of disorder or lattice defects can be found in the wrinkle-free regions of the MoS2 monolayer from complementary Raman spectroscopy measurements. We assume that the minor lateral variation in the optical constants are caused by lateral modification in the van der Waals interaction presumably caused by the preparation using micromechanical exfoliation and viscoelastic stamping.

preprint2015arXiv

Optical control of internal electric fields in band-gap graded InGaN nanowires

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.

preprint2013arXiv

Polarization dependent, surface plasmon induced photoconductance in gold nanorod arrays

We report on the photoconductance in two-dimensional arrays of gold nanorods which is strongly enhanced at the frequency of the longitudinal surface plasmon of the nanorods. The arrays are formed by a combination of droplet deposition and stamping of gold nanorod solutions on SiO2 substrates. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting photons. We interpret the occurrence of the photoconductance as a bolometric enhancement of the arrays' conductance upon excitation of the longitudinal surface plasmon resonance of the nanorods.

preprint2012arXiv

A Waveguide-Coupled On-Chip Single Photon Source

We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz.

preprint2012arXiv

Electrical control of inter-dot electron tunneling in a quantum dot molecule

We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitoring the temporal evolution of the pump-probe spectra the electron and hole tunneling times are separately measured and resonant tunneling between the two dots is shown to be mediated both by elastic and inelastic processes. Ultrafast (< 5 ps) inter-dot tunneling is shown to occur over a surprisingly wide bandwidth, up to ~8 meV, reflecting the spectrum of exciton-acoustic phonon coupling in the system.

preprint2012arXiv

Local photocurrent generation in thin films of the topological insulator Bi2Se3

We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

preprint2012arXiv

Many-body correlations of electrostatically trapped dipolar excitons

We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceeding the excitonic separation. With decreasing temperature and increasing density n <= 5*10^10 cm^{-2} we find an increasingly asymmetric PL lineshape with a sharpening blue edge and a broad red tail which we interpret to reflect correlated behavior mediated by dipolar interactions. From the PL intensity I(E) below the PL maximum at E_{0} we extract at T < 5 K a distinct power law I(E) \sim (E_{0}-E)^-|α| with -|α|\sim -0.8 in the range E_{0}-E of 1.5-4 meV, comparable to the dipolar interaction energy.

preprint2012arXiv

Single exciton emission from gate-defined quantum dots

With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.

preprint2010arXiv

In-situ direct visualization of irradiated e-beam patterns on unprocessed resists using atomic force microscopy

We introduce an in-situ characterization method of resists used for e-beam lithography. The technique is based on the application of an atomic force microscope which is directly mounted below the cathode of an electron-beam lithography system. We demonstrate that patterns irradiated by the e-beam can be efficiently visualized and analyzed in surface topography directly after the e-beam exposure. This in-situ analysis takes place without any development or baking steps, and gives access to the chemical (or latent) image of the irradiated resist.

preprint2010arXiv

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects.

preprint2010arXiv

Spatially resolved ultrafast transport current in GaAs photoswitches

We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of a collective electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches.

preprint2009arXiv

Optoelectronic Sensitization of Carbon Nanotubes by CdTe Nanocrystals

We investigate the photoconductance of single-walled carbon nanotube-nanocrystalhybrids. The nanocrystals are bound to the nanotubes via molecular recognition. We find that the photoconductance of the hybrids can be adjusted by the absorption characteristics of the nanocrystals. In addition, the photoconductance of the hybrids surprisingly exhibits a slow time constant of about 1 ms after excitation of the nanocrystals. The data are consistent with a bolometrically induced current increase in the nanotubes caused by photon absorption in the nanocrystals.

preprint2009arXiv

Photocurrent and Photoconductance Properties of a GaAs Nanowire

We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors.

preprint2009arXiv

Photocurrent Properties of Freely Suspended Carbon Nanotubes under Uniaxial Strain

The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the non-monotonous behavior by a superposition of the influence of the uniaxial strain on the resistivity of the CNTs and the effects caused by Schottky contacts between the CNTs and the metal contacts.

preprint2009arXiv

Surface Plasmon Enhanced Photoconductance of Gold Nanoparticle Arrays with Incorporated Alkane Linkers

We report on a photoconductive gain effect in two-dimensional arrays of gold nanoparticles, in which alkane molecules are inserted. The nanoparticle arrays are formed by a self-assembly process from alkanethiol-coated gold nanoparticles, and subsequently they are patterned on a Si/SiO2 chip by a microcontact printing technique. We find that the photoconductance of the arrays is strongly enhanced at the frequency of the surface plasmon of the nanoparticles. We interpret the observation as a bolometric enhancement of the conductance of the nanoparticle arrays upon excitation of the surface plasmon resonance.

preprint2008arXiv

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

preprint2007arXiv

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.