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D. Schuh

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Published work

42 published item(s)

preprint2020arXiv

Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz-laser radiation with a spot smaller than the film area. This eliminates the near-field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.

preprint2016arXiv

Coherent cyclotron motion beyond Kohn's theorem

In solids, the high density of charged particles makes many-body interactions a pervasive principle governing optics and electronics[1-12]. However, Walter Kohn found in 1961 that the cyclotron resonance of Landau-quantized electrons is independent of the seemingly inescapable Coulomb interaction between electrons[2]. While this surprising theorem has been exploited in sophisticated quantum phenomena[13-15] such as ultrastrong light-matter coupling[16], superradiance[17], and coherent control[18], the complete absence of nonlinearities excludes many intriguing possibilities, such as quantum-logic protocols[19]. Here, we use intense terahertz pulses to drive the cyclotron response of a two-dimensional electron gas beyond the protective limits of Kohn's theorem. Anharmonic Landau ladder climbing and distinct terahertz four- and six-wave mixing signatures occur, which our theory links to dynamic Coulomb effects between electrons and the positively charged ion background. This new context for Kohn's theorem unveils previously inaccessible internal degrees of freedom of Landau electrons, opening up new realms of ultrafast quantum control for electrons.

preprint2016arXiv

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation.

preprint2015arXiv

Electric-dipole-induced spin resonance in a lateral double quantum dot incorporating two single domain nanomagnets

On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling constants depend crucially on the detailed field distribution. We present a double quantum dot (QD) hybrid device laterally defined in a GaAs / AlGaAs het- erostructure which incorporates two single domain nanomagnets. They have appreciably different coercive fields which allows us to realize four distinct configurations of the local inhomogeneous field distribution. We perform dc transport spectroscopy in the Pauli-spin blockade regime as well as electric-dipole-induced spin resonance (EDSR) measurements to explore our hybrid nanodevice. Characterizing the two nanomagnets we find excellent agreement with numerical simulations. By comparing the EDSR measurements with a second double QD incorporating just one nanomagnet we reveal an important advantage of having one magnet per QD: It facilitates strong field gradients in each QD and allows to control the electron spins individually for instance in an EDSR experi- ment. With just one single domain nanomagnet and common QD geometries EDSR can likely be performed only in one QD.

preprint2015arXiv

Landau-Zener interference at bichromatic driving

We investigate experimentally and theoretically the interference at avoided crossings which are repeatedly traversed as a consequence of an applied ac field. Our model system is a charge qubit in a serial double quantum dot connected to two leads. Our focus lies on effects caused by simultaneous driving with two different frequencies. We work out how the commensurability of the driving frequencies affects the symmetry of the interference patterns both in real space and in Fourier space. For commensurable frequencies, the symmetry depends sensitively on the relative phase between the two modes, whereas for incommensurable frequencies the symmetry of monochromatic driving is always recovered.

preprint2015arXiv

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.

preprint2014arXiv

Hole spin dynamics and hole $g$ factor anisotropy in coupled quantum well systems

Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole $g$ factor via time-resolved Kerr rotation, and for the low-symmetry crystallographic orientations (110) and (113a), we observe a large in-plane anisotropy of the hole $g$ factor, in good agreement with our theoretical calculations. Using resonant spin amplification, we also observe an anisotropy of the hole spin dephasing in the (110)-grown structure, indicating that crystal symmetry may be used to control hole spin dynamics.

preprint2014arXiv

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

preprint2014arXiv

Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.

preprint2014arXiv

Magnetoresistance Induced by Rare Strong Scatterers in a High Mobility 2DEG

We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong scatterers. We identify the rare strong scatterers as macroscopic defects in the material and determine their density from the peak curvature.

preprint2013arXiv

Characterization of Qubit Dephasing by Landau-Zener Interferometry

Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM) quantum interference of the resulting superposition state. We demonstrate that LZSM interferometry is a viable and very general tool to not only study qubit properties but beyond to decipher decoherence caused by complex environmental influences. Our scheme is based on straightforward steady state experiments. The coherence time of our two-electron charge qubit is limited by electron-phonon interaction. It is much longer than previously reported for similar structures.

preprint2013arXiv

Finite-size effect in shot noise in hopping conduction

We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hopping (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime.

preprint2013arXiv

Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.

preprint2013arXiv

Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.

preprint2013arXiv

Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5 percent. Spin diffusion is studied by varying the distance between pump and probe beams in micro-spectroscopy experiments. We observe diffusion lengths above 100 $μ$m and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance.

preprint2012arXiv

Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the $g$ factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.

preprint2012arXiv

Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas

We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pumping leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, while low power resonant optical pumping only leads to a resident hole spin polarization if a sufficient in-plane magnetic field is applied. The competition between two different processes of spin orientation strongly modifies the shape of resonant spin amplification traces. Calculations of the spin dynamics in the electron--hole system are in good agreement with the experimental Kerr rotation and resonant spin amplification traces and allow us to determine the hole spin polarization within the sample after optical orientation, as well as to extract quantitative information about spin dephasing processes at various stages of the evolution.

preprint2012arXiv

Determination of energy scales in few-electron double quantum dots

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.

preprint2012arXiv

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.

preprint2011arXiv

A circular dielectric grating for vertical extraction of single quantum dot emission

We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.

preprint2011arXiv

Efficient quantum dot single photon extraction into an optical fiber using a nanophotonic directional coupler

We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fiber input and output. Effcient photoluminescence collection over a wavelength range of tens of nanometers is demonstrated, and a maximum collection effciency of 6.05 % (corresponding single photon rate of 3.0 MHz) into a single mode optical fiber was estimated for a single quantum dot exciton.

preprint2011arXiv

Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.

preprint2011arXiv

Electron spin relaxation as evidence of excitons in an electron-hole plasma

We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures.

preprint2011arXiv

Optical polarization of localized hole spins in p-doped quantum wells

The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.

preprint2011arXiv

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems

We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes.

preprint2010arXiv

Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures

For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system. Recently, hole spins in III-V-based quantum dots were discussed as alternatives to electron spins, since the hole spin, in contrast to the electron spin, is not affected by contact hyperfine interaction with the nuclear spins. Here, we report a breakthrough in the spin coherence times of hole ensembles, confined in so called natural quantum dots, in narrow GaAs/AlGaAs quantum wells at temperatures below 500 mK. Consistently, time-resolved Faraday rotation and resonant spin amplification techniques deliver hole-spin coherence times, which approach in the low magnetic field limit values above 70 ns. The optical initialisation of the hole spin polarisation, as well as the interconnected electron and hole spin dynamics in our samples are well reproduced using a rate equation model.

preprint2010arXiv

Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

preprint2010arXiv

Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

preprint2010arXiv

Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas

The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus SOI is important. We relate the measured splitting to the Dresselhaus coupling parameter, the QW confinement, the Fermi wavenumber and to strain effects. From this, the coupling parameter is determined quantitatively, including its sign.

preprint2010arXiv

Spatially resolved ultrafast transport current in GaAs photoswitches

We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of a collective electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches.

preprint2010arXiv

Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures

We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.

preprint2010arXiv

Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.

preprint2009arXiv

Confluence of resonant laser excitation and bi-directional quantum dot nuclear spin polarization

Resonant laser scattering along with photon correlation measurements have established the atom-like character of quantum dots. Here, we present measurements which challenge this identification for a wide range of experimental parameters: the absorption lineshapes that we measure at magnetic fields exceeding 1 Tesla indicate that the nuclear spins polarize by an amount that ensures locking of the quantum dot resonances to the incident laser frequency. In contrast to earlier experiments, this nuclear spin polarization is bi-directional, allowing the electron+nuclear spin system to track the changes in laser frequency dynamically on both sides of the quantum dot resonance. Our measurements reveal that the confluence of the laser excitation and nuclear spin polarization suppresses the fluctuations in the resonant absorption signal. A master equation analysis shows narrowing of the nuclear Overhauser field variance, pointing to potential applications in quantum information processing.

preprint2009arXiv

Cyclotron effect on coherent spin precession of two-dimensional electrons

We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the $(001)$-grown structures without external magnetic fields, we observe coherent oscillations of the electron spin polarization about the effective spin-orbit field. In non-quantizing magnetic fields applied normal to the sample plane, the cyclotron motion of the electrons rotates the effective spin-orbit field. This rotation leads to fast oscillations in the spin polarization about a non-zero value and a strong increase in the spin dephasing time in our experiments. These two effects are absent in the $(110)$-grown structure due to the different symmetry of its effective spin-orbit field. The measurements are in excellent agreement with our theoretical model.

preprint2009arXiv

Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-insulator-transition shows the longest spin relaxation time at low temperatures, a clear crossing of the spin relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin relaxation time above 70 K.

preprint2009arXiv

Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures

We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-doping layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs.

preprint2009arXiv

Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

preprint2008arXiv

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

preprint2007arXiv

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^\ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^\ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with {\em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.

preprint2007arXiv

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.

preprint2004arXiv

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.

preprint2003arXiv

Spin-sensitive Bleaching and Spin-Relaxation in QW's

Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of circularly polarized radiation is mostly controlled by the spin relaxation time of the holes. The saturation behavior has been investigated for different QW widths and in dependence on the temperature with the result that the saturation intensity substantially decreases with narrowing of QWs. Spin relaxation times were experimentally obtained by making use of calculated (linear) absorption coefficients for inter-subband transitions.