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Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.

preprint2007arXivOpen access
A. GartnerL. PrechtelD. SchuhA. W. HolleitnerJ. P. Kotthaus
cond-mat.mes-hallcond-mat.othercond-mat.str-el
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A. GartnerL. PrechtelD. SchuhA. W. HolleitnerJ. P. Kotthaus

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