Abstract
We introduce an in-situ characterization method of resists used for e-beam lithography. The technique is based on the application of an atomic force microscope which is directly mounted below the cathode of an electron-beam lithography system. We demonstrate that patterns irradiated by the e-beam can be efficiently visualized and analyzed in surface topography directly after the e-beam exposure. This in-situ analysis takes place without any development or baking steps, and gives access to the chemical (or latent) image of the irradiated resist.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.