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G. Abstreiter

G. Abstreiter appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

17 published item(s)

preprint2015arXiv

Coulomb mediated hybridization of excitons in artificial molecules

We report the Coulomb mediated hybridization of excitonic states in an optically active, artificial quantum dot molecule. By probing the optical response of the artificial molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic 8-band $k \cdot p$ calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial molecule.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical control of inter-dot electron tunneling in a quantum dot molecule

We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitoring the temporal evolution of the pump-probe spectra the electron and hole tunneling times are separately measured and resonant tunneling between the two dots is shown to be mediated both by elastic and inelastic processes. Ultrafast (< 5 ps) inter-dot tunneling is shown to occur over a surprisingly wide bandwidth, up to ~8 meV, reflecting the spectrum of exciton-acoustic phonon coupling in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High fidelity optical preparation and coherent Larmor precession of a single hole in an InGaAs quantum dot molecule

We employ ultrafast pump-probe spectroscopy with photocurrent readout to directly probe the dynamics of a single hole spin in a single, electrically tunable self-assembled quantum dot molecule formed by vertically stacking InGaAs quantum dots. Excitons with defined spin configurations are initialized in one of the two dots using circularly polarized picosecond pulses. The time-dependent spin configuration is probed by the spin selective optical absorption of the resulting few Fermion complex. Taking advantage of sub-5 ps electron tunneling to an orbitally excited state of the other dot, we initialize a single hole spin with a purity of >96%, i.e., much higher than demonstrated in previous single dot experiments. Measurements in a lateral magnetic field monitor the coherent Larmor precession of the single hole spin with no observable loss of spin coherence within the ~300 ps hole lifetime. Thereby, the purity of the hole spin initialization remains unchanged for all investigated magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pumping conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pumping.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Excited State Quantum Couplings and Optical Switching of an Artificial Molecule

We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton transitions in the upper and lower dots are energetically separated by only ~2 meV. Excited state transitions ~8-16 meV to higher energy exhibit pronounced anticrossings as the electric field is tuned due to the formation of hybridized electron states. We show that the observed excited state transitions occur between these hybridized electronic states and different hole states in the upper dot. By simultaneously pumping two different excited states with two laser fields we demonstrate a strong (88% on-off contrast) laser induced switching of the optical response. The results represent an electrically tunable, discrete coupled quantum system with a conditional optical response.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms

Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear excitonic Zeeman gap, providing a blueprint to enhance such magnetic non-linearities via growth engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Asymmetric optical nuclear spin pumping in a single uncharged quantum dot

A highly asymmetric dynamic nuclear spin pumping is observed in a single self assembled InGaAs quantum dot subject to resonant optical pumping of the neutral exciton transition leading to a large maximum polarization of 54%. This dynamic nuclear polarization is found to be much stronger following pumping of the higher energy Zeeman state. Time-resolved measurements allow us to directly monitor the buildup of the nuclear spin polarization in real time and to quantitatively study the dynamics of the process. A strong dependence of the observed dynamic nuclear polarization on the applied magnetic field is found, with resonances in the pumping efficiency being observed for particular magnetic fields. We develop a model that fully accounts for the observed behaviour, where the pumping of the nuclear spin system is due to hyperfine-mediated spin flip transitions between the states of the neutral exciton manifold.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interplay between the electrical transport properties of GeMn thin films and Ge substrates

We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small bandgap. Anomalous Hall measurements and large magneto resistance effects are completely understood by taking a dominating substrate contribution as well as the measurement geometry into account. It is shown that substrate conduction persists also for well conducting, degenerate, p-type thin films, giving rise to an effective two-layer conduction scheme. Using n-type Ge substrates, parallel conduction through the substrate can be reduced for the p-type epi-layers, as a consequence of the emerging pn-interface junction. GeMn thin films fabricated on these substrates exhibit a negligible magneto resistance effect. Our study underlines the importance of a thorough characterization and understanding of possible substrate contributions for electrical transport studies of GeMn thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Probing spin relaxation in an individual InGaAs quantum dot using a single electron optical spin memory device

We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales exceeding 40μs. The selective generation of a single electron in the quantum dot is performed by resonant optical excitation and subsequent partial exciton ionization; the hole is removed from the quantum dot whilst the electron remains stored. When subject to a magnetic field applied in Faraday geometry, we show how the spin of the electron can be prepared with a polarization up to 65% simply by controlling the voltage applied to the gate electrode. After generation, the electron spin is stored in the quantum dot before being read out using an all optical implementation of spin to charge conversion technique, whereby the spin projection of the electron is mapped onto the more robust charge state of the quantum dot. After spin to charge conversion, the charge state of the dot is repeatedly tested by pumping a luminescence recycling transition to obtain strong readout signals. In combination with spin manipulation using fast optical pulses or microwave pulses, this provides an ideal basis for probing spin coherence in single self-assembled quantum dots over long timescales and developing optimal methods for coherent spin control.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, DC Stark shift, diamagnetic shift and g-factor tunability for model dots with the measured size and a comparatively low In-composition of x(In)~35% near the dot apex. We show that the observed g-factor tunability is dominated by the hole, the electron contributing only weakly. The electric field induced perturbation of the hole wavefunction is shown to impact upon the g-factor via orbital angular momentum quenching, the change of the In:Ga composition inside the envelope function playing only a minor role. Our results provide design rules for growing self-assembled quantum dots for electrical spin manipulation via electrical g-factor modulation.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Photocurrent and Photoconductance Properties of a GaAs Nanowire

We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects

Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.

0 citations0 reviewsNo code linkedOpen access