Researcher profile

G. Abstreiter

G. Abstreiter contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2011arXiv

Excited State Quantum Couplings and Optical Switching of an Artificial Molecule

We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton transitions in the upper and lower dots are energetically separated by only ~2 meV. Excited state transitions ~8-16 meV to higher energy exhibit pronounced anticrossings as the electric field is tuned due to the formation of hybridized electron states. We show that the observed excited state transitions occur between these hybridized electronic states and different hole states in the upper dot. By simultaneously pumping two different excited states with two laser fields we demonstrate a strong (88% on-off contrast) laser induced switching of the optical response. The results represent an electrically tunable, discrete coupled quantum system with a conditional optical response.

preprint2011arXiv

Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms

Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear excitonic Zeeman gap, providing a blueprint to enhance such magnetic non-linearities via growth engineering.

preprint2010arXiv

Asymmetric optical nuclear spin pumping in a single uncharged quantum dot

A highly asymmetric dynamic nuclear spin pumping is observed in a single self assembled InGaAs quantum dot subject to resonant optical pumping of the neutral exciton transition leading to a large maximum polarization of 54%. This dynamic nuclear polarization is found to be much stronger following pumping of the higher energy Zeeman state. Time-resolved measurements allow us to directly monitor the buildup of the nuclear spin polarization in real time and to quantitatively study the dynamics of the process. A strong dependence of the observed dynamic nuclear polarization on the applied magnetic field is found, with resonances in the pumping efficiency being observed for particular magnetic fields. We develop a model that fully accounts for the observed behaviour, where the pumping of the nuclear spin system is due to hyperfine-mediated spin flip transitions between the states of the neutral exciton manifold.

preprint2010arXiv

Interplay between the electrical transport properties of GeMn thin films and Ge substrates

We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small bandgap. Anomalous Hall measurements and large magneto resistance effects are completely understood by taking a dominating substrate contribution as well as the measurement geometry into account. It is shown that substrate conduction persists also for well conducting, degenerate, p-type thin films, giving rise to an effective two-layer conduction scheme. Using n-type Ge substrates, parallel conduction through the substrate can be reduced for the p-type epi-layers, as a consequence of the emerging pn-interface junction. GeMn thin films fabricated on these substrates exhibit a negligible magneto resistance effect. Our study underlines the importance of a thorough characterization and understanding of possible substrate contributions for electrical transport studies of GeMn thin films.

preprint2010arXiv

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, DC Stark shift, diamagnetic shift and g-factor tunability for model dots with the measured size and a comparatively low In-composition of x(In)~35% near the dot apex. We show that the observed g-factor tunability is dominated by the hole, the electron contributing only weakly. The electric field induced perturbation of the hole wavefunction is shown to impact upon the g-factor via orbital angular momentum quenching, the change of the In:Ga composition inside the envelope function playing only a minor role. Our results provide design rules for growing self-assembled quantum dots for electrical spin manipulation via electrical g-factor modulation.