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Researcher profile

J. P. Kotthaus

J. P. Kotthaus contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2012arXiv

Influence of e-e scattering on the temperature dependence of the resistance of a classical ballistic point contact in a two-dimensional electron system

We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)].

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Many-body correlations of electrostatically trapped dipolar excitons

We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceeding the excitonic separation. With decreasing temperature and increasing density n <= 5*10^10 cm^{-2} we find an increasingly asymmetric PL lineshape with a sharpening blue edge and a broad red tail which we interpret to reflect correlated behavior mediated by dipolar interactions. From the PL intensity I(E) below the PL maximum at E_{0} we extract at T < 5 K a distinct power law I(E) \sim (E_{0}-E)^-|α| with -|α|\sim -0.8 in the range E_{0}-E of 1.5-4 meV, comparable to the dipolar interaction energy.

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preprint2012arXiv

Single exciton emission from gate-defined quantum dots

With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.

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preprint2010arXiv

Acoustic phonon-based interaction between coplanar quantum circuits in magnetic field

We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity of B. This indicates that the spatial regions where the phonon emission/reabsorption is efficient are controlled by magnetic field. The results are interpreted in terms of non-equilibrium transport via skipping orbits in two-dimensional electron system.

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preprint2008arXiv

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

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preprint2003arXiv

Single electron-phonon interaction in a suspended quantum dot phonon cavity

An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode confined in the cavity. This phonon blockade of transport is lifted at magnetic fields where higher electronic states with nonzero angular momentum are brought into resonance with the phonon energy.

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