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Researcher profile

Yee Sin Ang

Yee Sin Ang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-sciphysics.comp-phphysics.opticsMachine Learningphysics.chem-phphysics.data-an

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Published work

15 published item(s)

preprint2022arXiv

Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$-TeO$_2$

Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $β$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $β$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $β$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 μA/μm according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $β$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $β$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Modeling of electric double layer at solid-liquid interface with spatial complexity

Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB equations (with and without steric effects) by introducing a phenomenal parameter $D$ (with a value between 0 and 1) to account for the spatial complexity due to impurities in EDL. The electrical potential and ion charge distribution for different $D$ are investigated. At $D$ = 1, the model recover the classical findings of ideal EDL. The electrical potential decays slowly at $D <$1, thus suggesting a wider region of saturated layer under fixed surface potential in the presence of spatial complexity. The fractional-space generalized model developed here provides a useful tool to account for spatial complexity effects which are not captured in the classic full-dimensional models.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Port Reconfigurable Phase-Change Optical Resonator

Active control and manipulation of electromagnetic waves are highly desirable for advanced photonic device technology, such as optical cloaking, active camouflage and information processing. Designing optical resonators with high ease-of-control and reconfigurability remains a open challenge thus far. Here we propose a novel mechanism to continuously reconfigure an optical resonator between one-port and two-port configurations via \emph{phase-change material} for efficient optical modulation. By incorporating a phase-change material VO$_2$ substrate into a photonic crystal optical resonator, we computationally show that the system behaves as a one-port device with near-perfect absorption and two-port device with high transmission up to 92% when VO$_2$ is in the metallic rutile phase and insulating monoclinic phase, respectively. The optical response can be continuously and reversibly modulated between various intermediate states. More importantly, the proposed device is compatible with wide-angle operation and is robust against structural distortion. Our findings reveal a novel device architecture of \emph{port reconfigurable} optical resonator uniquely enabled by switchable optical properties of phase change material.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

SUTD-PRCM Dataset and Neural Architecture Search Approach for Complex Metasurface Design

Metasurfaces have received a lot of attentions recently due to their versatile capability in manipulating electromagnetic wave. Advanced designs to satisfy multiple objectives with non-linear constraints have motivated researchers in using machine learning (ML) techniques like deep learning (DL) for accelerated design of metasurfaces. For metasurfaces, it is difficult to make quantitative comparisons between different ML models without having a common and yet complex dataset used in many disciplines like image classification. Many studies were directed to a relatively constrained datasets that are limited to specified patterns or shapes in metasurfaces. In this paper, we present our SUTD polarized reflection of complex metasurfaces (SUTD-PRCM) dataset, which contains approximately 260,000 samples of complex metasurfaces created from electromagnetic simulation, and it has been used to benchmark our DL models. The metasurface patterns are divided into different classes to facilitate different degree of complexity, which involves identifying and exploiting the relationship between the patterns and the electromagnetic responses that can be compared in using different DL models. With the release of this SUTD-PRCM dataset, we hope that it will be useful for benchmarking existing or future DL models developed in the ML community. We also propose a classification problem that is less encountered and apply neural architecture search to have a preliminary understanding of potential modification to the neural architecture that will improve the prediction by DL models. Our finding shows that convolution stacking is not the dominant element of the neural architecture anymore, which implies that low-level features are preferred over the traditional deep hierarchical high-level features thus explains why deep convolutional neural network based models are not performing well in our dataset.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using first-principle calculations. We find that MoSi$_2$N$_4$/GaN is a direct band gap Type-I VDWH while MoSi$_2$N$_4$/ZnO is an indirect band gap Type-II VDWH. Intriguingly, by applying an electric field or mechanical strain along the out-of-plane direction, the band structures of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO can be substantially modified, exhibiting rich transitional behaviors, such as the Type-I-to-Type-II band alignment and the direct-to-indirect band gap transitions. These findings reveal the potentials of MoSi$_2$N$_4$-based WBG VDWH as a tunable hybrid materials with enormous design flexibility in ultracompact optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Designing 24-hour Electrical Power Generator: Thermoradiative Device for Harvesting Energy from Sun and Outer Space

Energy harvesting from sun and outer space using thermoradiative devices (TRD), despite being promising renewable energy sources, are limited only to daytime and nighttime period, respectively. A system with 24-hour continuous energy generation remains an open question thus far. Here, we propose a TRD-based power generator that harvests solar energy via concentrated solar irradiation during daytime and via thermal infrared emission towards the outer space at nighttime, thus achieving the much sought-after 24-hour electrical power generation. We develop a rigorous thermodynamical model to investigate the performance characteristics, parametric optimum design, and the role of various energy loss mechanisms. Our model predicts that the TRD-based system yields a peak efficiency of 12.6\% at daytime and a maximum power density of 10.8 Wm$^{-2}$ at nighttime, thus significantly outperforming the state-of-art record-setting thermoelectric generator. These findings reveal the potential of TRD towards 24-hour electricity generation and future renewable energy technology.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Designing a Concentrated High-Efficiency Thermionic Solar Cell Enabled by Graphene Collector

We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the thermionic emission current from graphene, space charge effect in vacuum gap, and the various irreversible energy losses within the subcomponents, we perform a detailed characterization on the conversion efficiency limit and electrical power output characteristics of the proposed system. We systematically model and compare the energy conversion efficiency of various configurations of graphene-graphene and graphene-diamond and diamond-diamond thermionic emitter, and show that utilizing diamond films as an emitter and graphene as a collector offers the highest maximum efficiency, thus revealing the important role of graphene in achieving high-performance thermionic emission solar cell. A maximum efficiency of 12.8\% under 800 sun has been revealed, which is significantly higher than several existing solid-state solar cell designs, such as the solar-driven thermoelectric and thermophotovoltaic converters. Our work thus opens up new avenues to advance the efficiency limit of thermionic solar energy conversion and the development of next-generation novel-nanomaterial-based solar energy harvesting technology.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$Ω$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Broadband strong optical dichroism in topological Dirac semimetals with Fermi velocity anisotropy

Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and numerical studies of 3D DSMs. Although this omission does not qualitatively alter the physics of light-driven massless quasiparticles in 3D DSMs, it does \emph{quantitatively} change the optical coefficients which can lead to nontrivial implications in terms of nanophotonics and plasmonics applications. Here we study the linear optical response of 3D DSMs for general Fermi velocity values along each direction. Although the signature conductivity-frequency scaling, $σ(ω) \propto ω$, of 3D Dirac fermion is well-protected from Fermi velocity anisotropy, the linear optical response exhibits strong linear dichroism as captured by the \emph{universal} extinction ratio scaling law, $Λ_{ij} = (v_i/v_j)^2$ (where $i\neq j$ denotes the three spatial coordinates $x,y,z$, and $v_i$ is the $i$-direction Fermi velocity), which is independent of frequency, temperature, doping, and carrier scattering lifetime. For Cd$_3$As$_2$ and Na$_3$Bi$_3$, an exceptionally strong extinction ratio larger than 15 and covering broad terahertz window is revealed. Our findings shed new light on the role of Fermi velocity anisotropy in the optical response of Dirac semimetals and open up novel polarization-sensitive functionalities, such as photodetection and light modulation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization

We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the energy conversion efficiency of various configurations by explicitly considering the non-Richardson thermionic emission across few-layer graphene/semiconductor Schottky heterostructures. The calculations reveal that ABA-stacked trilayer graphene-silicon solar cell exhibits a maximal conversion efficiency exceeding 28\% due to a lower reversed saturation current when compared to that of the ABC-stacking configuration. The thermal coefficients of PCE for ABA and ABC stacking FGSCs are -0.064\%/K and -0.049\%/K, respectively. Our work offers insights for optimal designs of graphene-based solar cells, thus paving a route towards the design of high-performance FGSC for future nanoscale energy converters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green&#39;s function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.

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preprint2020arXiv

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices.

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preprint2019arXiv

Super-Andreev reflection and longitudinal shift of pseudospin-one fermions

Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface. We show that distinct from the previously studied pseudospin-1/2 and two dimensional electron gas models, the pseudospin-1 fermions exhibit a strongly enhanced Andreev reflection probability, and remarkably, can be further tuned to approach perfect Andreev reflection with unit efficiency for all incident angles, exhibiting a previously unknown {super-Andreev reflection effect}. The super-Andreev reflection leads to perfect transparency of the NS interface that strongly promotes charge injection into the superconductor, and directly manifests as a differential conductance peak which can be readily probed in experiment. Additionally, we find that sizable longitudinal shifts exist in the normal and Andreev reflections of pseudospin-1 fermions. Distinct from the pseudospin-1/2 case, the shift is always in the forward direction in the subgap regime, regardless of whether the reflection is of retro- or specular type.

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