Source author record

Lay Kee Ang

Lay Kee Ang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

12works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

12 published item(s)

preprint2022arXiv

Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology.

preprint2021arXiv

Designing 24-hour Electrical Power Generator: Thermoradiative Device for Harvesting Energy from Sun and Outer Space

Energy harvesting from sun and outer space using thermoradiative devices (TRD), despite being promising renewable energy sources, are limited only to daytime and nighttime period, respectively. A system with 24-hour continuous energy generation remains an open question thus far. Here, we propose a TRD-based power generator that harvests solar energy via concentrated solar irradiation during daytime and via thermal infrared emission towards the outer space at nighttime, thus achieving the much sought-after 24-hour electrical power generation. We develop a rigorous thermodynamical model to investigate the performance characteristics, parametric optimum design, and the role of various energy loss mechanisms. Our model predicts that the TRD-based system yields a peak efficiency of 12.6\% at daytime and a maximum power density of 10.8 Wm$^{-2}$ at nighttime, thus significantly outperforming the state-of-art record-setting thermoelectric generator. These findings reveal the potential of TRD towards 24-hour electricity generation and future renewable energy technology.

preprint2021arXiv

Designing a Concentrated High-Efficiency Thermionic Solar Cell Enabled by Graphene Collector

We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the thermionic emission current from graphene, space charge effect in vacuum gap, and the various irreversible energy losses within the subcomponents, we perform a detailed characterization on the conversion efficiency limit and electrical power output characteristics of the proposed system. We systematically model and compare the energy conversion efficiency of various configurations of graphene-graphene and graphene-diamond and diamond-diamond thermionic emitter, and show that utilizing diamond films as an emitter and graphene as a collector offers the highest maximum efficiency, thus revealing the important role of graphene in achieving high-performance thermionic emission solar cell. A maximum efficiency of 12.8\% under 800 sun has been revealed, which is significantly higher than several existing solid-state solar cell designs, such as the solar-driven thermoelectric and thermophotovoltaic converters. Our work thus opens up new avenues to advance the efficiency limit of thermionic solar energy conversion and the development of next-generation novel-nanomaterial-based solar energy harvesting technology.

preprint2021arXiv

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$Ω$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts.

preprint2015arXiv

High-Efficiency Van Der Waals heterostructure Thermionic Device With Graphene Electrodes

In this paper, we propose van del Waals heterostructure-based thermionic devices for the applications in cooling and power generation in the temperature range of 300 to 400 K. By using two-dimensional materials of low cross-plane thermal conductivity as the barrier materials and graphene as electrodes, our calculation demonstrates that our proposed device will have a higher efficiency as compared to other methods such as thermoelectric device and the traditional thermionic devices. By using the parameters within the current technology, we predict a cooling capability at more than 50$\%$ of the Carnot efficiency, and a 10 to 20 $\%$ efficiency in harvesting the wasted heat at 400 K.

preprint2015arXiv

Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation

Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.

preprint2014arXiv

Electro-optical graphene plasmonic logic gates

The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/AND, NAND/OR, XNOR/XOR) achieved not only ultracompact size lengths of less than λ/28 with respect to the operating wavelength of 10 μm, but also a minimum extinction ratio as high as 15 dB. These graphene plasmonic logic gates are potential building blocks for future nanoscale midinfrared photonic integrated circuits.

preprint2014arXiv

Waveguide engineering of graphene's nonlinearity

Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's nonlinearity, we are able to dramatically increase the nonlinear parameter and decrease the switching optical power to sub-watt levels. Our design makes use of the hybrid plasmonic waveguide and careful manipulation of graphene's refractive index by tuning its Fermi level. The ability to tailor the nonlinear parameter in graphene based waveguides via the Fermi level provides a paradigm of nonlinear optics devices to be realized.

preprint2013arXiv

Design of a Monopole Antenna Based Resonant Nanocavity for Detection of Optical Power from Hybrid Plasmonic Waveguides

A novel plasmonic waveguide-coupled nanocavity with a monopole antenna is proposed to localize the optical power from a hybrid plasmonic waveguide and subsequently convert it into electrical current. The nanocavity is designed as a Fabry-Pérot waveguide resonator, while the monopole antenna is made of a metallic nanorod directly mounted onto the metallic part of the waveguide terminal which acts as the conducting ground. The nanocavity coincides with the antenna feed sandwiched in between the antenna and the ground. Maximum power from the waveguide can be coupled into, and absorbed in the nanocavity by means of the field resonance in the antenna as well as in the nanocavity. Simulation results show that 42% optical power from the waveguide can be absorbed in a germanium filled nanocavity with a nanoscale volume of 220x150x60nm$^3$. The design may find applications in nanoscale photo-detection, subwavelength light focusing and manipulating, as well as sensing.

preprint2013arXiv

Mid-infrared Active Graphene Nanoribbon Plasmonic Waveguide Devices

Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP) wavelength. In this paper, we design active plasmonic waveguide devices based on electrical-modulation of doped graphene nanoribbons (GNRs) on a voltage-gated inhomogeneous dielectric layer. We first develop figure-of-merit (FoM) formulae to characterize the performance of passive and active graphene nanoribbon waveguides. Based on the FoMs, we choose optimal GNRs to build a plasmonic shutter, which consists of a GNR placed on top of an inhomogeneous SiO$_2$ substrate supported by a Si nanopillar. Simulation studies show that for a simple 50nm-long plasmonic shutter, the modulation contrast can exceed 30dB. The plasmonic shutter is further extended to build a 4-port active power splitter and an 8-port active network, both based on GNR cross-junction waveguides. For the active power splitter, the GSP power transmission at each waveguide arm can be independently controlled by an applied gate-voltage with high modulation contrast and nearly-equal power-splitting proportions. From the construct of the 8-port active network, we see that it is possible to scale up the GNR cross-junction waveguides into large and complex active waveguide networks, showing great potential in an exciting new area of mid-infrared graphene plasmonic integrated nanocircuits.

preprint2013arXiv

Plasmonic coupled-cavity system for enhancement of surface plasmon localization in plasmonic detectors

A plasmonic coupled-cavity system, which consists of a quarter-wave coupler cavity, a resonant Fabry-Perot detector nanocavity, and an off-resonant reflector cavity, is used to enhance the localization of surface plasmons in a plasmonic detector. The coupler cavity is designed based on transmission line theory and wavelength scaling rules in the optical regime, while the reflector cavity is derived from off-resonant resonator structures to attenuate transmission of plasmonic waves. We observed strong coupling of the cavities in simulation results, with an 86% improvement of surface plasmon localization achieved. The plasmonic coupled-cavity system may find useful applications in areas of nanoscale photodetectors, sensors, and an assortment of plasmonic-circuit devices.

preprint2013arXiv

Ultracompact Vanadium Dioxide Dual-Mode Plasmonic Waveguide Electroabsorption Modulator

Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO$_2$-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the "on" state and high-loss VO$_2$ layer during the "off" state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10dB with an active size of only 200x50x220nm$^3$ (or ~λ$^3$/1700), requiring a drive-voltage of ~4.6V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology.