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Liemao Cao

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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5 publications

preprint2022arXiv

Cataloguing MoSi2_2N4_4 and WSi2_2N4_4 van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi2_2N4_4 and WSi2_2N4_4 monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi2_2N4_4 and WSi2_2N4_4-based [(Mo,W)Si2_2N4_4] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi2_2N4_4/(InSe, WSe2_2) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si2_2N4_4 vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si2_2N4_4/α2α_2-(Mo,W)Ge2_2P4_4 vdWHs. Our findings unravel the enormous potential of (Mo,W)Si2_2N4_4 vdWHs in designing ultimately compact excitonic solar cell device technology.

Open access
preprint2022arXiv

Multiferroic van der Waals heterostructure FeCl2_2/Sc2_2CO2_2: Nonvolatile electrically switchable electronic and spintronic properties

Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl2_2 monolayer and ferroelectric Sc2_2CO2_2 monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl2_2/Sc2_2CO2_2 heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc2_2CO2_2. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl2_2/Sc2_2CO2_2 vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.

Open access
preprint2021arXiv

Quantum Transport in Two-Dimensional WS2_2 with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS2_2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 kΩΩ\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼\sim190 cm2^2V−1^{-1}s−1^{-1}) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2_2-indium interface. Our results reveal significant advances towards high-performance WS2_2 devices using indium alloy contacts.

Open access
preprint2020arXiv

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Ultrathin films of topological Dirac semimetal, Na3_3Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na3_3Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS2_2 and WS2_2 monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na3_3Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable nn-type doping in the Na3_3Bi/graphene heterostructures. In the case of MoS2_2 and WS2_2 monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na3_3Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.

Open access
preprint2020arXiv

Two-dimensional van der Waals electrical contact to monolayer MoSi2_2N4_4

Two-dimensional (2D) MoSi2_2N4_4 monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi2_2N4_4, the physics of electrical contacts to MoSi2_2N4_4 remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi2_2N4_4 contacted by graphene and NbS2_2 monolayers using first-principle density functional theory calculations. We show that the MoSi2_2N4_4/NbS2_2 contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi2_2N4_4/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi2_2N4_4, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi2_2N4_4-based 2D nanodevices.

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