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Researcher profile

L. K. Ang

L. K. Ang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.mtrl-sciMachine Learningphysics.comp-phphysics.opticsComputer Visioncond-mat.othermath.NANumerical Analysisphysics.chem-phphysics.data-anquant-ph

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Published work

11 published item(s)

preprint2022arXiv

Modeling of electric double layer at solid-liquid interface with spatial complexity

Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB equations (with and without steric effects) by introducing a phenomenal parameter $D$ (with a value between 0 and 1) to account for the spatial complexity due to impurities in EDL. The electrical potential and ion charge distribution for different $D$ are investigated. At $D$ = 1, the model recover the classical findings of ideal EDL. The electrical potential decays slowly at $D <$1, thus suggesting a wider region of saturated layer under fixed surface potential in the presence of spatial complexity. The fractional-space generalized model developed here provides a useful tool to account for spatial complexity effects which are not captured in the classic full-dimensional models.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Stack operation of tensor networks

The tensor network, as a facterization of tensors, aims at performing the operations that are common for normal tensors, such as addition, contraction and stacking. However, due to its non-unique network structure, only the tensor network contraction is so far well defined. In this paper, we propose a mathematically rigorous definition for the tensor network stack approach, that compress a large amount of tensor networks into a single one without changing their structures and configurations. We illustrate the main ideas with the matrix product states based machine learning as an example. Our results are compared with the for loop and the efficient coding method on both CPU and GPU.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

SUTD-PRCM Dataset and Neural Architecture Search Approach for Complex Metasurface Design

Metasurfaces have received a lot of attentions recently due to their versatile capability in manipulating electromagnetic wave. Advanced designs to satisfy multiple objectives with non-linear constraints have motivated researchers in using machine learning (ML) techniques like deep learning (DL) for accelerated design of metasurfaces. For metasurfaces, it is difficult to make quantitative comparisons between different ML models without having a common and yet complex dataset used in many disciplines like image classification. Many studies were directed to a relatively constrained datasets that are limited to specified patterns or shapes in metasurfaces. In this paper, we present our SUTD polarized reflection of complex metasurfaces (SUTD-PRCM) dataset, which contains approximately 260,000 samples of complex metasurfaces created from electromagnetic simulation, and it has been used to benchmark our DL models. The metasurface patterns are divided into different classes to facilitate different degree of complexity, which involves identifying and exploiting the relationship between the patterns and the electromagnetic responses that can be compared in using different DL models. With the release of this SUTD-PRCM dataset, we hope that it will be useful for benchmarking existing or future DL models developed in the ML community. We also propose a classification problem that is less encountered and apply neural architecture search to have a preliminary understanding of potential modification to the neural architecture that will improve the prediction by DL models. Our finding shows that convolution stacking is not the dominant element of the neural architecture anymore, which implies that low-level features are preferred over the traditional deep hierarchical high-level features thus explains why deep convolutional neural network based models are not performing well in our dataset.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using first-principle calculations. We find that MoSi$_2$N$_4$/GaN is a direct band gap Type-I VDWH while MoSi$_2$N$_4$/ZnO is an indirect band gap Type-II VDWH. Intriguingly, by applying an electric field or mechanical strain along the out-of-plane direction, the band structures of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO can be substantially modified, exhibiting rich transitional behaviors, such as the Type-I-to-Type-II band alignment and the direct-to-indirect band gap transitions. These findings reveal the potentials of MoSi$_2$N$_4$-based WBG VDWH as a tunable hybrid materials with enormous design flexibility in ultracompact optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Broadband strong optical dichroism in topological Dirac semimetals with Fermi velocity anisotropy

Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and numerical studies of 3D DSMs. Although this omission does not qualitatively alter the physics of light-driven massless quasiparticles in 3D DSMs, it does \emph{quantitatively} change the optical coefficients which can lead to nontrivial implications in terms of nanophotonics and plasmonics applications. Here we study the linear optical response of 3D DSMs for general Fermi velocity values along each direction. Although the signature conductivity-frequency scaling, $σ(ω) \propto ω$, of 3D Dirac fermion is well-protected from Fermi velocity anisotropy, the linear optical response exhibits strong linear dichroism as captured by the \emph{universal} extinction ratio scaling law, $Λ_{ij} = (v_i/v_j)^2$ (where $i\neq j$ denotes the three spatial coordinates $x,y,z$, and $v_i$ is the $i$-direction Fermi velocity), which is independent of frequency, temperature, doping, and carrier scattering lifetime. For Cd$_3$As$_2$ and Na$_3$Bi$_3$, an exceptionally strong extinction ratio larger than 15 and covering broad terahertz window is revealed. Our findings shed new light on the role of Fermi velocity anisotropy in the optical response of Dirac semimetals and open up novel polarization-sensitive functionalities, such as photodetection and light modulation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient generation of extreme terahertz harmonics in 3D Dirac semimetals

Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations and complementary analytical theory, we show that 3D Dirac semimetals (DSMs) have enormous potential as compact sources of extreme terahertz harmonics, achieving energy conversion efficiencies beyond $10^{-5}$ at the $31^{\rm{st}}$ harmonic with input intensities on the order of $10$ MW/cm$^2$, over $10^5$ times lower than in conventional THz high harmonic generation systems. Our theory also reveals a fundamental feature in the nonlinear optics of 3D DSMs: a distinctive regime where higher-order optical nonlinearity vanishes, arising as a direct result of the extra dimensionality in 3D DSMs compared to 2D DSMs. Our findings should pave the way to the development of efficient platforms for high-frequency terahertz light sources and optoelectronics based on 3D DSMs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green&#39;s function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Generalized scaling law for exciton binding energy in two-dimensional materials

Binding energy calculation in two-dimensional (2D) materials is crucial in determining their electronic and optical properties pertaining to enhanced Coulomb interactions between charge carriers due to quantum confinement and reduced dielectric screening. Based on full solutions of the Schrödinger equation in screened hydrogen model with a modified Coulomb potential ($1/r^{β-2}$), we present a generalized and analytical scaling law for exciton binding energy, $E_β = E_{0}\times \big (\,aβ^{b}+c\big )\, (μ/ε^{2})$, where $β$ is a fractional-dimension parameter accounted for the reduced dielectric screening. The model is able to provide accurate binding energies, benchmarked with the reported Bethe-Salpeter Equation (BSE) and experimental data, for 58 mono-layer 2D and 8 bulk materials respectively through $β$. For a given material, $β$ is varied from $β$ = 3 for bulk 3D materials to a value lying in the range 2.55$-$2.7 for 2D mono-layer materials. With $β_{\text{mean}}$ = 2.625, our model improves the average relative mean square error by 3 times in comparison to existing models. The results can be used for Coulomb engineering of exciton binding energies in the optimal design of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Super-Andreev reflection and longitudinal shift of pseudospin-one fermions

Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface. We show that distinct from the previously studied pseudospin-1/2 and two dimensional electron gas models, the pseudospin-1 fermions exhibit a strongly enhanced Andreev reflection probability, and remarkably, can be further tuned to approach perfect Andreev reflection with unit efficiency for all incident angles, exhibiting a previously unknown {super-Andreev reflection effect}. The super-Andreev reflection leads to perfect transparency of the NS interface that strongly promotes charge injection into the superconductor, and directly manifests as a differential conductance peak which can be readily probed in experiment. Additionally, we find that sizable longitudinal shifts exist in the normal and Andreev reflections of pseudospin-1 fermions. Distinct from the pseudospin-1/2 case, the shift is always in the forward direction in the subgap regime, regardless of whether the reflection is of retro- or specular type.

0 citations0 reviewsNo code linkedOpen access