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Researcher profile

Martin Albrecht

Martin Albrecht contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nnphysics.app-phphysics.chem-phphysics.comp-phphysics.ins-detphysics.optics

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Published work

8 published item(s)

preprint2026arXiv

Studies of ultrafast dynamics in substrate-free nanoparticles at ELI using Timepix3 optical camera

We present a novel application of the Timepix3 optical camera (Tpx3Cam) for investigating ultrafast dynamics in substrate-free nanoparticles at the Extreme Light Infrastructure European Research Infrastructure Consortium (ELI ERIC). The camera, integrated into an ion imaging system based on a micro-channel plate (MCP) and a fast P47 scintillator, enables individual time-stamping of incoming ions with nanosecond timing precision and high spatial resolution. The detector successfully captured laser-induced ion events originating from free nanoparticles disintegrated by intense laser pulses. Owing to the broad size distribution of the nanoparticles (10-500 nm) and the variation in laser intensities within the interaction volume, the detected events range in occupancy from near-zero to extremely high, approaching the readout limits of the detector. By combining time-of-flight and velocity map imaging (VMI) techniques, detailed post-processing and analysis were performed. The results presented here focus on the performance of Tpx3Cam under high-occupancy conditions, which are of particular relevance to this study. These conditions approach the limitations imposed by the camera readout capabilities and challenge the effectiveness of standard post-processing algorithms. We investigated these limitations and associated trade-offs, and we present improved methods and algorithms designed to extract the most informative features from the data.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

FAIR data enabling new horizons for materials research

The prosperity and lifestyle of our society are very much governed by achievements in condensed matter physics, chemistry and materials science, because new products for sectors such as energy, the environment, health, mobility and information technology (IT) rely largely on improved or even new materials. Examples include solid-state lighting, touchscreens, batteries, implants, drug delivery and many more. The enormous amount of research data produced every day in these fields represents a gold mine of the twenty-first century. This gold mine is, however, of little value if these data are not comprehensively characterized and made available. How can we refine this feedstock; that is, turn data into knowledge and value? For this, a FAIR (findable, accessible, interoperable and reusable) data infrastructure is a must. Only then can data be readily shared and explored using data analytics and artificial intelligence (AI) methods. Making data 'findable and AI ready' (a forward-looking interpretation of the acronym) will change the way in which science is carried out today. In this Perspective, we discuss how we can prepare to make this happen for the field of materials science.

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preprint2022arXiv

Tackling Disorder in $γ$-Ga$_2$O$_3$

Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation $\normalsize{}\mathrm{\mathrm{\mathrm{NiO}(1\bar{\mathrm{1}}0)}\:||\:\mathrm{\mathrm{GaN}(11.0)}}$ and $\mathrm{\mathrm{\mathrm{NiO}\mathrm{(10\bar{\mathrm{1}})}\:||\:\mathrm{GaN(11.0)}}}$, was observed by X-ray diffraction (XRD) and confirmed by in-situ reflection high-energy electron diffraction as well as transmission electron microscopy (TEM) and electron backscatter diffraction. With respect to the high lattice mismatch of 8.1 % and a measured low residual tensile layer strain, growth by lattice matching epitaxy or domain matching epitaxy is discussed. The morphology measured by atomic force microscopy showed a grainy surface, probably arising from the growth by the columnar rotational domains visible in TEM micrographs. The domain sizes measured by AFM and TEM increase with the growth temperature, indicating an increasing surface diffusion length. Growth at 850 $^{\circ}$C, however, involved local decomposition of the GaN substrate that lead to an interfacial $\mathrmβ$-Ga$\mathrm{_{2}}$O$\mathrm{_{3}}$($\bar{\mathrm{2}}$01) layer and a high NiO surface roughness. Raman mesurements of the quasi-forbidden one-phonon peak indicate increasing layer quality (decreasing defect density) with increasing growth temperature. The results above suggest optimum growth temperatures around 700 $^{\circ}$C for high layer and interface quality.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The role of 2s Bloch wave state excitations on STEM-HAADF intensity in quantitative analysis of alloys

In this work, we emphasize the important contribution of the 2s Bloch wave state to the properties of a STEM electron probe propagating on an atomic column. For a strong enough column potential, the confinement of the 2s state leads to a long-period oscillation of the electron wave function, which is reflected in the resulting STEM-HAADF intensity. We show how this influences STEM composition quantification even at large thicknesses. We found additionally that the excitation of the 2s state affects the intensity of alloys where long-range order phenomena are present, which in turn provides a way to probe the degree of order in alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The role of the interface in controlling the epitaxial relationship between orthorhombic $\text{LaInO}_\text{3}$ and cubic $\text{BaSnO}_\text{3}$

Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration corrected transmission electron microscopy that orthorhombic $\text{LaInO}_\text{3}$ films grow in form of three different types of domains on the cubic $\text{BaSnO}_\text{3}$ pseudosubstrate. Quantitative evaluation of our TEM data shows that $c_{pc}$-oriented and $a_{pc}/b_{pc}$-oriented domains are present with similar probability. While continuum elasticity theory suggests that $c_{pc}$-oriented domains should exhibit a significantly higher strain energy density than $a_{pc}/b_{pc}$-oriented domains, density functional calculations confirm that $c_{pc}$- and $a_{pc}$-oriented domains on $\text{BaSnO}_\text{3}$ have similar energies.

0 citations0 reviewsNo code linkedOpen access