Source author record

Zbigniew Galazka

Zbigniew Galazka appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall physics.comp-ph physics.optics

Catalog footprint

What is connected

12works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.

preprint2022arXiv

First and Second Order Raman Spectroscopy of Monoclinic $β-\mathrm{Ga}_2\mathrm{O}_{3}$

We employ a combined experimental-theoretical study of the first- and second-order Raman modes of monoclinic $β$-Ga$_{2}$O$_{3}$. The investigated materials is of particular interest due to its deep-UV bandgap paired with a high critical field strength, offering promising applications in power-electronics. A crucial prerequisite for the future development of Ga$_{2}$O$_{3}$-based devices is a detailed understanding of the lattice dynamics as they are important for the elasticity (through acoustic phonons), thermal conductivity (through the heat transferred by phonons), the temperature-dependence of the bandgap (impacted by electron-phonon coupling) or the free carrier transport (via phonon scattering). Polarized micro-Raman spectroscopy measurements on the (010) and ($\bar{2}01$) planes enable the determination of the phonon frequencies of all 15 first-order and more than 40 second-order Raman modes. The experimental results are correlated with calculations of the mode frequencies, phonon dispersion relation and phonon density of states using density functional perturbation theory (DFPT). By applying a group-theoretical analysis, we are able to distinguish between overtones and combinational modes and identify the high symmetry points in the Brillouin zone which contribute to the observed second order modes. Based on these information, we demonstrate the simultaneous determination of Raman-, IR-, and acoustic phonons in $β$-Ga$_{2}$O$_{3}$ by second-order Raman spectroscopy.

preprint2021arXiv

Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV.

preprint2021arXiv

Thermal conductivity of bulk In$_{2}$O$_{3}$ single crystals

The transparent semiconductor In$_{2}$O$_{3}$ is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conductivity. We present a study of thermal conductivity of In$_{2}$O$_{3}$ crystals and find that around 20 K, it peaks to a value as high as 5,000 WK$^{-1}$m$^{-1}$, comparable to the peak thermal conductivity in silicon and exceeded only by a handful of insulators. The amplitude of the peak drastically decreases in presence of a type of disorder, which does not simply correlate with the density of mobile electrons. Annealing enhances the ceiling of the phonon mean free path. Samples with the highest thermal conductivity are those annealed in the presence of hydrogen. Above 100 K, thermal conductivity becomes sample independent. In this intrinsic regime, dominated by phonon-phonon scattering, the magnitude of thermal diffusivity, $D$ becomes comparable to many other oxides, and its temperature dependence evolves towards $T^{-1}$. The ratio of $D$ to the square of sound velocity yields a scattering time which obeys the expected scaling with the Planckian time.

preprint2020arXiv

Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a high electron concentration of n = 3.26*10^(19) cm^(-3), caused by unintenional doping. The mobility at room temperature is mu = 55 cm^2/Vs, whereas the scattering on ionized impurities limits the mobility to mu =62 cm^2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is S_(ZnGa2O4-Al) = (-125+-2) muV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K we observed a maximum of the Seebeck coefficient due to the phonon drag effect.

preprint2019arXiv

Signatures of free carriers in Raman spectra of cubic In$_2$O$_3$

We discuss the influence of free carriers on the Raman scattering in $n$-type In$_2$O$_3$. For high-quality cubic single crystals, electronic single-particle excitations are revealed as a relatively broad Raman feature in the frequency range below 300~cm$^{-1}$. Furthermore, discrete phonon lines in the same frequency range exhibit asymmetric lineshapes characteristic for Fano resonances. The two observed spectral features contain the potential to be utilized for the quantitative determination of the free carrier concentration in $n$-type In$_2$O$_3$ using Raman spectroscopy as a contactless experimental technique.

preprint2019arXiv

The electrical conductivity tensor of $β$-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differently-oriented high-quality bulk samples and the comparison to finite element simulations we precisely determine the ratio of all elements of the $β$-Ga$_{2}$O$_{3}$ 3-dimensional electrical conductivity tensor. Despite the structural anisotropy a nearly isotropic conductivity at and above room temperature was found with the principal conductivities deviating from each other by less than 6% and the off-diagonal element being $\approx3$% of the diagonal ones. Analysis of the temperature dependence of the anisotropy and mobility of differently doped samples allows us to compare the anisotropy for dominant phonon-scattering to that for dominant ionized-impurity scattering. For both scattering mechanisms, the conductivites along the $a$ and $b$-direction agree within 2%. In contrast, the conductivity along $c$-direction amounts to $0.96\times$ and up to $1.12\times$ that along the $b$-direction for phonon and ionized impurity scattering, respectively. The determined transport anisotropies are larger than the theoretically predicted effective mass anisotropy, suggesting slightly anisotropic scattering mechanisms. We demonstrate that significantly higher anisotropies can be caused by oriented extended structural defects in the form of low-angle grain boundaries for which we determined energy barriers of multiple 10 meV.

preprint2016arXiv

Atomic signatures of local environment from core-level spectroscopy in $β$-Ga$_2$O$_3$

We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $β$-Ga$_2$O$_3$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region. The spectrum from O 1$s$ core electrons is dominated by excitonic effects, which overall redshift the absorption onset by 0.5 eV, and significantly redistribute the intensity to lower energies. Analysis of the spectra obtained within many-body perturbation theory reveals atomic fingerprints of the inequivalent O atoms. From the comparison of energy-loss near-edge fine-structure (ELNES) spectra computed with respect to different crystal planes, with measurements recorded under the corresponding diffraction conditions, we show how the spectral contributions of specific O atoms can be enhanced while quenching others. These results suggest ELNES, combined with ab initio many-body theory, as a very powerful technique to characterize complex systems, with sensitivity to individual atomic species and to their local environment.

preprint2016arXiv

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating $β$-$\mathrm{Ga_2O_3}$ single crystal along [100], [010] and [001]

The monoclinic crystal structure of $β$-$\mathrm{Ga_2O_3}$ leads to significant anisotropy of the thermal properties. The 2$ω$-method is used to measure the thermal diffusivity $D$ in [010] and [001] direction respectively and to determine the thermal conductivity values $λ$ of the [100], [010] and [001] direction from the same insulating Mg doped $β$-$\mathrm{Ga_2O_3}$ single crystal. We detect a temperature independent anisotropy factor of both the thermal diffusivity and conductivity values of $D_{[010]}/D_{[001]}=λ_{[010]}/λ_{[001]}=1.4\pm 0.1$. The temperature-dependence is in accord with phonon-phonon-Umklapp scattering processes from 300 K down to 150 K. Below 150 K point-defect-scattering lowers the estimated phonon-phonon-Umklapp-scattering values.

preprint2015arXiv

On the influence of inversion on thermal properties of magnesium gallium spinel

Measurements of thermal diffusivity \k{appa} (using laser flash analysis) for temperatures from 100 °C to 1200 °C and of the inversion parameter x (using X-ray analysis) for the single crystal spinel MgGa2O4 have been performed. X-ray analysis showed a small change in x for samples annealed at 800 °C (x = 0.838) and 1200 °C (x = 0.834). Thermal diffusivity revealed a significant rise of \k{appa} for temperatures higher than 950 °C, deviating from the typical 1/T drop of \k{appa}. An additional systematic rise of \k{appa} with time is observed for temperatures between 950 °C and 1100 °C. A connection between cation disordering processes typical for spinels at elevated temperatures and the observed deviation of \k{appa} is proposed: Data indicate that cations changing their occupancy site at equilibration processes contribute significantly to \k{appa} and therefore represent a new type of heat transport.

preprint2014arXiv

Temperature-dependent thermal conductivity in Mg-doped and undoped $β$-$\mathrm{Ga_2O_3}$ bulk-crystals

For $β$-$\mathrm{Ga_2O_3}$ only little information exist concerning the thermal properties, especially the thermal conductivity $λ$. Here, the thermal conductivity is measured by applying the electrical 3$ω$-method on Czochralski-grown $β$-$\mathrm{Ga_2O_3}$ bulk crystals, which have a thickness of $200~\mathrm{μm}$ and $800~\mathrm{μm}$. At room temperature the thermal conductivity along the [100]-direction in Mg-doped electrical insulating and undoped semiconducting $β$-$\mathrm{Ga_2O_3}$ is confirmed as $13\pm 1~\mathrm{Wm^{-1}K^{-1}}$ for both crystals. The thermal conductivity increases for decreasing temperature down to $25~\mathrm{K}$ to $λ(25~\mathrm{K})=(5.3\pm 0.6)\cdot 10^2~\mathrm{Wm^{-1}K^{-1}}$. The phonon contribution of $λ$ dominates over the electron contribution below room temperature. The observed function $λ(T)$ is in accord with phonon-phonon-Umklapp scattering and the Debye-model for the specific heat at $T\gtrsim 90~\mathrm{K}$ which is about $0.1$ fold of the Debye-temperature $θ_\mathrm{D}$. Here a detailed discussion of the phonon-phonon-Umklapp scattering for $T< θ_\mathrm{D}$ is carried out. The influence of point defect scattering is considered for $T<100~\mathrm{K}$.

preprint2013arXiv

High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.