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Dmitrii Nabok

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Published work

7 published item(s)

preprint2022arXiv

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.

preprint2022arXiv

Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments

We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi$_4$Te$_3$ in the framework of the $GW$ approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi$_4$Te$_3$ is classified as a dual topological insulator with bulk topological invariants $\mathbb{Z}_2$ (1;111) and magnetic mirror Chern number $n_M=1$. The bulk $GW$ results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi$_4$Te$_3$.

preprint2021arXiv

Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV.

preprint2020arXiv

Structural, electronic, and optical properties of periodic graphene/h-BN van der Waals heterostructures

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body perturbation theory, we investigate the structural, electronic, and optical properties of periodic heterostructures formed by graphene and hexagonal boron nitride (h-BN). To understand how the constituents affect each other depending on the layer stacking, we examine 12 commensurate arrangements. We find that interaction with graphene improves the stability of bulk h-BN also in those configurations that are predicted to be energetically metastable. In return, the interaction with h-BN can open a band gap of a few hundred meV in graphene. Its actual size can be tuned by the arrangement of the layers. In the semiconducting configurations, the character and spatial distribution of optical excitations are affected by the specific stacking, that determines the electronic states involved in the transitions. Remarkably, six out of the 12 explored heterostructures remain semi-metallic.

preprint2016arXiv

Accurate all-electron $G_0W_0$ quasiparticle energies employing the full-potential augmented planewave method

The $GW$ approach of many-body perturbation theory (MBPT) has become a common tool for calculating the electronic structure of materials. However, with increasing number of published results, discrepancies between the values obtained by different methods and codes become more and more apparent. For a test set of small- and wide-gap semiconductors, we demonstrate how to reach the numerically \emph{best} electronic structure within the framework of the full-potential linearized augmented planewave (FLAPW) method. We first evaluate the impact of local orbitals in the Kohn-Sham eigenvalue spectrum of the underlying starting point. The role of the basis-set quality is then further analyzed when calculating the $G_0W_0$ quasiparticle energies. Our results, computed with the \exciting{} code, are compared to those obtained using the projector-augmented planewave (PAW) formalism, finding overall, good agreement between both methods. We also provide data produced with a typical FLAPW basis set as a benchmark for other $G_0W_0$ implementations.

preprint2016arXiv

Atomic signatures of local environment from core-level spectroscopy in $β$-Ga$_2$O$_3$

We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $β$-Ga$_2$O$_3$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region. The spectrum from O 1$s$ core electrons is dominated by excitonic effects, which overall redshift the absorption onset by 0.5 eV, and significantly redistribute the intensity to lower energies. Analysis of the spectra obtained within many-body perturbation theory reveals atomic fingerprints of the inequivalent O atoms. From the comparison of energy-loss near-edge fine-structure (ELNES) spectra computed with respect to different crystal planes, with measurements recorded under the corresponding diffraction conditions, we show how the spectral contributions of specific O atoms can be enhanced while quenching others. These results suggest ELNES, combined with ab initio many-body theory, as a very powerful technique to characterize complex systems, with sensitivity to individual atomic species and to their local environment.

preprint2016arXiv

Probing the LDA-1/2 method as a starting point for $G_0W_0$ calculations

Employing the $G_0W_0$ approximation of Hedin's $GW$ approach one can obtain quasi-particle energies of extended systems and molecules with good accuracy. However, for many materials, semi-local exchange-correlation functionals are unsatisfactory starting points for $G_0W_0$ calculations. Hybrid functionals often improve upon them, but at a substantially higher computational cost. As an alternative, we suggest the LDA-1/2 method, which provides reasonable band gaps, without being computationally involved. In this work, we systematically compare 3 starting points for $G_0W_0$: LDA, PBE0, and LDA-1/2. A selection of solids is chosen for this benchmark: C, Si, SiC, AlP, LiF, MgO, Ne, Ar, GaN, GaAs, CdS, ZnS, and ZnO. We demonstrate that LDA-1/2 is a good starting point in most cases, reducing the mean absolute error of band gaps by 50% when compared to the other 2 functionals.