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Researcher profile

Wahib Aggoune

Wahib Aggoune contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phcond-mat.otherphysics.optics

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Published work

7 published item(s)

preprint2022arXiv

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.

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preprint2022arXiv

How ferroelectric BaTiO$_3$ can tune a two-dimensional electron gas at the interface of LaInO3 and BaSnO$_3$: a first-principles study

The emerging interest in two-dimensional electron gases (2DEGs), formed at interfaces between two insulating oxide perovskites poses crucial fundamental question in view of future electronic devices. In the framework of density-functional theory, we investigate the possibility to control the characteristics of the 2DEG formed at the LaInO$_3$/BaSnO$_3$ interface by including a ferroelectric BaTiO$_3$ layer. To do so, we examine how the orientation of the ferroelectric polarization impacts density and confinement of the 2DEG. We find that aligning the ferroelectric polarization toward (outward) the LaInO$_3$/BaSnO$_3$ interface leads to an accumulation (depletion) of the interfacial 2DEG. Varying its magnitude, we find a linear effect on the 2DEG charge density that is confined within the BaSnO$_3$ side. Analysis of the optimized geometries revels that inclusion of the BaTiO$_3$ block makes structural distortions at the LaInO$_3$/BaSnO$_3$ less pronounced, which, in turn, enhances the 2DEG density. Thicker ferroelectric layers allow for reaching higher polarization magnitudes. We discuss the mechanisms behind all these findings and rationalize how the characteristics of both 2DEG and 2D hole gases can be controlled in the considered heterostructures. Overall, our results can be generalized to other combinations of ferroelectric, polar, and nonpolar materials.

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preprint2022arXiv

Tuning two-dimensional electron (hole) gases at LaInO$_{3}$/BaSnO$_{3}$ interfaces: Impact of polar distortions, termination, and thickness

Two-dimensional election gases (2DEG), arising due to quantum confinement at interfaces between transparent conducting oxides, have received tremendous attention in view of electronic applications. The challenge is to find a material system that exhibits both a high charge-carrier density and mobility, at and even above room temperature. Here, we explore the potential of interfaces formed by two lattice-matched wide-gap oxides of emerging interest, $\textit{i.e.}$, the polar, orthorhombic perovskite LaInO$_{3}$ and the non-polar, cubic perovskite BaSnO$_{3}$, employing density-functional theory and many-body theory. We demonstrate that this material combination exhibits all the key features for reaching the goal. For periodic heterostructures, we find that the polar discontinuity at the interface is mainly compensated by electronic relaxation through charge transfer from the LaInO$_{3}$ to the BaSnO$_{3}$ side. This leads to the formation of a 2DEG hosted by the highly-dispersive Sn-$s$-derived conduction band and a 2D hole gas of O-$p$ character, strongly localized inside LaInO$_{3}$. Remarkably, structural distortions through octahedra tilts induce a depolarization field counteracting the polar discontinuity, and thus increasing the $critical$ (minimal) LaInO$_{3}$ thickness, $t_c$, required for the formation of a 2DEG. These polar distortions decrease with increasing LaInO$_{3}$ thickness, enhancing the polar discontinuity and leading to a 2DEG density of 0.5 electron per unit-cell surface. Interestingly, in non-periodic heterostructures, these distortions lead to a decrease of $t_c$, thereby enhancing and delocalizing the 2DEG. We rationalize how polar distortions, termination, and thickness can be exploited in view of tailoring the 2DEG characteristics, and why this material is superior to the most studied prototype LaAlO$_{3}$/SrTiO$_{3}$.

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preprint2022arXiv

Two-dimensional electron gas at LaInO$_3$/BaSnO$_3$ interfaces controlled by a ferroelectric layer

With the example of LaInO$_{3}$/BaSnO$_3$, we demonstrate how both density and distribution of a two-dimensional electron gas (2DEG) formed at the interface between these perovskite oxides, can be efficiently controlled by a ferroelectric functional material. A polarization induced in a BaTiO$_3$ layer pointing toward the interface enhances the polar discontinuity which, in turn, significantly increases the 2DEG density and confinement, while, the opposite polarization depletes the 2DEG. Our predictions and analysis, based on first-principles calculations, can serve as a guide for designing such material combinations to be used in electronic devices.

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preprint2021arXiv

Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV.

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preprint2020arXiv

Structural, electronic, and optical properties of periodic graphene/h-BN van der Waals heterostructures

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body perturbation theory, we investigate the structural, electronic, and optical properties of periodic heterostructures formed by graphene and hexagonal boron nitride (h-BN). To understand how the constituents affect each other depending on the layer stacking, we examine 12 commensurate arrangements. We find that interaction with graphene improves the stability of bulk h-BN also in those configurations that are predicted to be energetically metastable. In return, the interaction with h-BN can open a band gap of a few hundred meV in graphene. Its actual size can be tuned by the arrangement of the layers. In the semiconducting configurations, the character and spatial distribution of optical excitations are affected by the specific stacking, that determines the electronic states involved in the transitions. Remarkably, six out of the 12 explored heterostructures remain semi-metallic.

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preprint2020arXiv

The role of the interface in controlling the epitaxial relationship between orthorhombic $\text{LaInO}_\text{3}$ and cubic $\text{BaSnO}_\text{3}$

Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration corrected transmission electron microscopy that orthorhombic $\text{LaInO}_\text{3}$ films grow in form of three different types of domains on the cubic $\text{BaSnO}_\text{3}$ pseudosubstrate. Quantitative evaluation of our TEM data shows that $c_{pc}$-oriented and $a_{pc}/b_{pc}$-oriented domains are present with similar probability. While continuum elasticity theory suggests that $c_{pc}$-oriented domains should exhibit a significantly higher strain energy density than $a_{pc}/b_{pc}$-oriented domains, density functional calculations confirm that $c_{pc}$- and $a_{pc}$-oriented domains on $\text{BaSnO}_\text{3}$ have similar energies.

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