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Researcher profile

Guanghui Zhou

Guanghui Zhou contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scihep-phphysics.app-phhep-exnucl-exnucl-th

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Published work

9 published item(s)

preprint2026arXiv

Electric-Field Modulated Optical Transitions in Monolayer CrI3 and Its Nanoribbons

The successful synthesis of few-layer CrI3 has opened new avenues for research in two-dimensional magnetic materials. Owing to its simple crystal structure and excellent physical properties, layered CrI3 has been extensively studied in magneto-optical effects, excitons, tunneling transport, and novel memory devices. However, the most current theoretical studies rely heavily on the first-principles calculations, and a general analytical theoretical framework, particularly for electric-field modulation and transport properties, is still lacking. In this work, using a 28-band tight-binding model combined with linear response theory, we systematically investigate the optoelectronic response for monolayer CrI3 and its nanoribbons. The results demonstrate that: (1) a vertical electric field can selectively close the band gap of one spin channel while the other remains insulating, resulting a transition to an half-metallic state; (2) the electric field dynamically shifts the optical transition peaks, providing a theoretical basis for extracting band parameters from experimental photoconductivity spectra; (3) nanoribbons with different edge morphologies exhibit distinct edge-state distributions and electronic properties, indicating that optical transition can be dynamically modualted through edge design. The theoretical model developed in this study, which can describe external electric field effect, offers an efficient and flexible approach for analytically investigating the CrI3 family and related materials. This model overcomes the limitations of first-principles methods and provides a solid foundation for designing spintronic and optoelectronic devices controlled by electric fields and edge effect.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High rectifying performance of heterojunctions with interface between armchair C$_3$N nanoribbons with and without edge H-passivation

Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart nano-ribbons/structures offering even more tunability in property because of the unique quantum confinement and edge effect, however, has not been revealed sufficiently. Here, using the first-principles calculation based on density functional theory and nonequilibrium Green's function technique, we first perform a study on the electron band structure of armchair C$_3$N nanoribbons (AC$_3$NNRs) without and with H-passivation. The calculated results show that the pristine AC$_3$NNRs are metal, while the H-passivated ones are either direct or indirect band gap semiconductors depending on the detailed edge atomic configurations. Then we propose a lateral planar homogenous junction with an interface between the pristine and H-passivated AC$_3$NNRs, in which forms a Schottky-like barrier. Interestingly, our further transport calculation demonstrates that this AC$_3$NNRs-based heterojunction exhibits a good rectification behavior. In specification, the average rectification ratio (RR) can reach up to $10^3$ in the bias regime from 0.2 to 0.4 V. Particularly, extending the length of semiconductor part in the heterojunction leads to the decrease of the current through the junction, but the RR can be enlarged obviously. The average RR increases to the order of $10^4$ in the bias from 0.25 to 0.40 V, with the boosted maximum up to $10^5$ at 0.35 V. The findings of this work may be serviceable for the design of functional nanodevices based on AC$_3$NNRs in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light sterile neutrinos and lepton-number-violating kaon decays in effective field theory

We investigate lepton-number-violating decays $K^\mp \rightarrow π^\pm l^\mp l^\mp$ in the presence of sterile neutrinos. We consider minimal interactions with Standard-Model fields through Yukawa couplings as well as higher-dimensional operators in the framework of the neutrino-extended Standard Model Effective Field Theory. We use $SU(3)$ chiral perturbation theory to match to mesonic interactions and compute the lepton-number-violating decay rate in terms of the neutrino masses and the Wilson coefficients of higher-dimensional operators. For neutrinos that can be produced on-shell, the decay rates are highly enhanced and higher-dimensional interactions can be probed up to very high scales around $ \mathcal{O}$(30) TeV.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-lived Sterile Neutrinos at Belle II in Effective Field Theory

Large numbers of $τ$ leptons are produced at Belle II. These could potentially decay into sterile neutrinos that, for the mass range under consideration, are typically long-lived, leading to displaced-vertex signatures. Here, we study a displaced-vertex search sterile-neutrino-extended Standard Model Effective Field Theory. The production and decay of the sterile neutrinos can be realized via either the standard active-sterile neutrino mixing or higher-dimensional operators in the effective Lagrangian. We perform Monte-Carlo simulations to estimate the Belle II sensitivities to such interactions. We find that Belle II can probe non-renormalizable dimension-six operators involving a single sterile neutrino up to a few TeV in the new-physics scale.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Edge and sublayer degrees of freedom for phosphorene nanoribbons with twofold-degenerate edge bands via electric field

For the pristine phosphorene nanoribbons (PNRs) with edge states, there exist two categories of edge bands near the Fermi energy (EF), i.e., the shuttle-shaped twofold-degenerate and the near-flat simple degenerate edge bands. However, the usual experimental measurement may not distinguish the difference between the two categories of edge bands. Here we study the varying rule for the edge bands of PNRs under an external electrostatic field. By using the KWANT code based on the tight-binding approach, we find that the twofold-degenerate edge bands can be divided into two separated shuttles until the degeneracy is completely removed and a gap near EFis opened under a sufficiently strong in-plane electric field. Importantly, each shuttle from the ribbon upper or lower edge outmost atoms is identified according to the local density of states. However, under a small off-plane field the shuttle-shaped bands are easily induced into two near-flat bands contributed from the edge atoms of the top and bottom sublayers, respectively. The evidence provides the edge and sublayer degrees of freedom (DOF) for the PNRs with shuttle-shaped edge bands, of which is obviously different from another category PNRs intrinsically with near-flat edge bands. This is because that the former category of ribbons solely have four zigzag-like atomic configurations at the edges in each unit cell, which also results in that the property is robust against the point defect in the ribbon center area. As an application, furthermore, based on this issue we propose a homogenous junction of a shuttle-edge-band PNR attached by two electric gates. Interestingly, the transport property of the junction with field manipulation well reflects the characteristics of the two DOFs. These findings may provide a further understanding on PNRs and initiate new developments in PNR-based electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sterile neutrinos and neutrinoless double beta decay in effective field theory

We investigate neutrinoless double beta decay ($0νββ$) in the presence of sterile neutrinos with Majorana mass terms. These gauge-singlet fields are allowed to interact with Standard-Model (SM) fields via renormalizable Yukawa couplings as well as higher-dimensional gauge-invariant operators up to dimension seven in the Standard Model Effective Field Theory extended with sterile neutrinos. At the GeV scale, we use Chiral effective field theory involving sterile neutrinos to connect the operators at the level of quarks and gluons to hadronic interactions involving pions and nucleons. This allows us to derive an expression for $0νββ$ rates for various isotopes in terms of phase-space factors, hadronic low-energy constants, nuclear matrix elements, the neutrino masses, and the Wilson coefficients of higher-dimensional operators. The needed hadronic low-energy constants and nuclear matrix elements depend on the neutrino masses, for which we obtain interpolation formulae grounded in QCD and chiral perturbation theory that improve existing formulae that are only valid in a small regime of neutrino masses. The resulting framework can be used directly to assess the impact of $0νββ$ experiments on scenarios with light sterile neutrinos and should prove useful in global analyses of sterile-neutrino searches. We perform several phenomenological studies of $0νββ$ in the presence of sterile neutrinos with and without higher-dimensional operators. We find that non-standard interactions involving sterile neutrinos have a dramatic impact on $0νββ$ phenomenology, and next-generation experiments can probe such interactions up to scales of $\mathcal O(100)$ TeV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices.

0 citations0 reviewsNo code linkedOpen access