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Guanghui Zhou

Guanghui Zhou appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scihep-phphysics.app-phcond-mat.str-elhep-exnucl-exnucl-th

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Published work

18 published item(s)

preprint2026arXiv

Electric-Field Modulated Optical Transitions in Monolayer CrI3 and Its Nanoribbons

The successful synthesis of few-layer CrI3 has opened new avenues for research in two-dimensional magnetic materials. Owing to its simple crystal structure and excellent physical properties, layered CrI3 has been extensively studied in magneto-optical effects, excitons, tunneling transport, and novel memory devices. However, the most current theoretical studies rely heavily on the first-principles calculations, and a general analytical theoretical framework, particularly for electric-field modulation and transport properties, is still lacking. In this work, using a 28-band tight-binding model combined with linear response theory, we systematically investigate the optoelectronic response for monolayer CrI3 and its nanoribbons. The results demonstrate that: (1) a vertical electric field can selectively close the band gap of one spin channel while the other remains insulating, resulting a transition to an half-metallic state; (2) the electric field dynamically shifts the optical transition peaks, providing a theoretical basis for extracting band parameters from experimental photoconductivity spectra; (3) nanoribbons with different edge morphologies exhibit distinct edge-state distributions and electronic properties, indicating that optical transition can be dynamically modualted through edge design. The theoretical model developed in this study, which can describe external electric field effect, offers an efficient and flexible approach for analytically investigating the CrI3 family and related materials. This model overcomes the limitations of first-principles methods and provides a solid foundation for designing spintronic and optoelectronic devices controlled by electric fields and edge effect.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High rectifying performance of heterojunctions with interface between armchair C$_3$N nanoribbons with and without edge H-passivation

Two-dimensional polyaniline with C$_3$N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart nano-ribbons/structures offering even more tunability in property because of the unique quantum confinement and edge effect, however, has not been revealed sufficiently. Here, using the first-principles calculation based on density functional theory and nonequilibrium Green's function technique, we first perform a study on the electron band structure of armchair C$_3$N nanoribbons (AC$_3$NNRs) without and with H-passivation. The calculated results show that the pristine AC$_3$NNRs are metal, while the H-passivated ones are either direct or indirect band gap semiconductors depending on the detailed edge atomic configurations. Then we propose a lateral planar homogenous junction with an interface between the pristine and H-passivated AC$_3$NNRs, in which forms a Schottky-like barrier. Interestingly, our further transport calculation demonstrates that this AC$_3$NNRs-based heterojunction exhibits a good rectification behavior. In specification, the average rectification ratio (RR) can reach up to $10^3$ in the bias regime from 0.2 to 0.4 V. Particularly, extending the length of semiconductor part in the heterojunction leads to the decrease of the current through the junction, but the RR can be enlarged obviously. The average RR increases to the order of $10^4$ in the bias from 0.25 to 0.40 V, with the boosted maximum up to $10^5$ at 0.35 V. The findings of this work may be serviceable for the design of functional nanodevices based on AC$_3$NNRs in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light sterile neutrinos and lepton-number-violating kaon decays in effective field theory

We investigate lepton-number-violating decays $K^\mp \rightarrow π^\pm l^\mp l^\mp$ in the presence of sterile neutrinos. We consider minimal interactions with Standard-Model fields through Yukawa couplings as well as higher-dimensional operators in the framework of the neutrino-extended Standard Model Effective Field Theory. We use $SU(3)$ chiral perturbation theory to match to mesonic interactions and compute the lepton-number-violating decay rate in terms of the neutrino masses and the Wilson coefficients of higher-dimensional operators. For neutrinos that can be produced on-shell, the decay rates are highly enhanced and higher-dimensional interactions can be probed up to very high scales around $ \mathcal{O}$(30) TeV.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-lived Sterile Neutrinos at Belle II in Effective Field Theory

Large numbers of $τ$ leptons are produced at Belle II. These could potentially decay into sterile neutrinos that, for the mass range under consideration, are typically long-lived, leading to displaced-vertex signatures. Here, we study a displaced-vertex search sterile-neutrino-extended Standard Model Effective Field Theory. The production and decay of the sterile neutrinos can be realized via either the standard active-sterile neutrino mixing or higher-dimensional operators in the effective Lagrangian. We perform Monte-Carlo simulations to estimate the Belle II sensitivities to such interactions. We find that Belle II can probe non-renormalizable dimension-six operators involving a single sterile neutrino up to a few TeV in the new-physics scale.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Edge and sublayer degrees of freedom for phosphorene nanoribbons with twofold-degenerate edge bands via electric field

For the pristine phosphorene nanoribbons (PNRs) with edge states, there exist two categories of edge bands near the Fermi energy (EF), i.e., the shuttle-shaped twofold-degenerate and the near-flat simple degenerate edge bands. However, the usual experimental measurement may not distinguish the difference between the two categories of edge bands. Here we study the varying rule for the edge bands of PNRs under an external electrostatic field. By using the KWANT code based on the tight-binding approach, we find that the twofold-degenerate edge bands can be divided into two separated shuttles until the degeneracy is completely removed and a gap near EFis opened under a sufficiently strong in-plane electric field. Importantly, each shuttle from the ribbon upper or lower edge outmost atoms is identified according to the local density of states. However, under a small off-plane field the shuttle-shaped bands are easily induced into two near-flat bands contributed from the edge atoms of the top and bottom sublayers, respectively. The evidence provides the edge and sublayer degrees of freedom (DOF) for the PNRs with shuttle-shaped edge bands, of which is obviously different from another category PNRs intrinsically with near-flat edge bands. This is because that the former category of ribbons solely have four zigzag-like atomic configurations at the edges in each unit cell, which also results in that the property is robust against the point defect in the ribbon center area. As an application, furthermore, based on this issue we propose a homogenous junction of a shuttle-edge-band PNR attached by two electric gates. Interestingly, the transport property of the junction with field manipulation well reflects the characteristics of the two DOFs. These findings may provide a further understanding on PNRs and initiate new developments in PNR-based electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sterile neutrinos and neutrinoless double beta decay in effective field theory

We investigate neutrinoless double beta decay ($0νββ$) in the presence of sterile neutrinos with Majorana mass terms. These gauge-singlet fields are allowed to interact with Standard-Model (SM) fields via renormalizable Yukawa couplings as well as higher-dimensional gauge-invariant operators up to dimension seven in the Standard Model Effective Field Theory extended with sterile neutrinos. At the GeV scale, we use Chiral effective field theory involving sterile neutrinos to connect the operators at the level of quarks and gluons to hadronic interactions involving pions and nucleons. This allows us to derive an expression for $0νββ$ rates for various isotopes in terms of phase-space factors, hadronic low-energy constants, nuclear matrix elements, the neutrino masses, and the Wilson coefficients of higher-dimensional operators. The needed hadronic low-energy constants and nuclear matrix elements depend on the neutrino masses, for which we obtain interpolation formulae grounded in QCD and chiral perturbation theory that improve existing formulae that are only valid in a small regime of neutrino masses. The resulting framework can be used directly to assess the impact of $0νββ$ experiments on scenarios with light sterile neutrinos and should prove useful in global analyses of sterile-neutrino searches. We perform several phenomenological studies of $0νββ$ in the presence of sterile neutrinos with and without higher-dimensional operators. We find that non-standard interactions involving sterile neutrinos have a dramatic impact on $0νββ$ phenomenology, and next-generation experiments can probe such interactions up to scales of $\mathcal O(100)$ TeV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

All-electric spin transistor based on a side-gate-modulated two-dimensional topological insulator

We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and allelectric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a paramagnetic material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anisotropic Quantum Confinement Effect and Electric Control of Surface States in Dirac Semimetal Nanostructures

The recent discovery of Dirac semimetals represents a new achievement in our fundamental understanding of topological states of matter. Due to their topological surface states, high mobility, and exotic properties associated with bulk Dirac points, these new materials have attracted significant attention and are believed to hold great promise for fabricating novel topological devices. For nanoscale device applications, effects from finite size usually play an important role. In this report, we theoretically investigate the electronic properties of Dirac semimetal nanostructures. Quantum confinement generally opens a bulk band gap at the Dirac points. We find that confinement along different directions shows strong anisotropiceffects. In particular, the gap due to confinement along vertical c-axis shows a periodic modulation, which is absent for confinement along horizontal directions. We demonstrate that the topological surface states could be controlled by lateral electrostatic gating. It is possible to generate Rashba-like spin splitting for the surface states and to shift them relative to the confinement-induced bulk gap. These results will not only facilitate our fundamental understanding of Dirac semimetal nanostructures, but also provide useful guidance for designing all-electrical topological spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field (MF) by adopting the developed Usuki transfer-matrix method in combination with the Landauer-Buttiker formalism. Wide spin filtering energy windows can be achieved in this system for a spin-unpolarized injection. In addition, both the width of these energy windows and the magnitude of the spin conductance within these energy widows can be tuned by varying the Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and the spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of the QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.

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preprint2012arXiv

Electrical modulation of the edge channel transport in topological insulators coupled to ferromagnetic leads

The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads. The application of a side-gate voltage induces a constriction or quantum point contact (QPC) which couples the two edge channels. The transport properties of the system is calculated via the Keldysh nonequilibrium Green's function method. We found that inter-edge spin-flip coupling can significantly enhance (suppress) the charge current when the magnetization of the leads are anti-parallel (parallel) to one another. On the other hand, spin-conserving inter-edge coupling generally reduces the current by backscattering regardless of the magnetization configuration. The charge current and the conductance as a function of the bias voltage, also exhibit similar trends with respect to spin-flip coupling strength, for both parallel and anti-parallel configurations. Hence, gate voltage modulation of edge states via a QPC can provide a means of modulating the spin or charge current flow in TI-based spintronics devices.

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preprint2012arXiv

Spin-dependent electron transport in a Rashba quantum wire with rough edges

We investigate theoretically the spin-dependent electron transport in a Rashba quantum wire with rough edges. The charge and spin conductances are calculated as function of the electron energy or the wire length by adopting the spinresolved lattice Green function method. For a single disordered Rashba wire, it is found that the charge conductance quantization is destroyed by the edge disorder. However, a nonzero spin conductance can be generated and its amplitude can be manipulated by the wire length, which is attributed to the broken structure symmetries and the spin-dependent quantum interference induced by the rough boundaries. For a large ensemble of disordered Rashba wires, the average charge conductance decreases monotonically, however, the average spin conductance increases to a maximum value and then decreases, with increasing wire length. Further study shows that the influence of the rough edges on the charge and spin conductances can be eliminated by applying a perpendicular magnetic field to the wire. In addition, a very large magnitude of the spin conductance can be achieved when the electron energy lies between the two thresholds of each pair of subbands. These findings may not only benefit to further apprehend the transport properties of the Rashba low-dimensional systems but also provide some theoretical instructions to the application of spintronics devices.

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preprint2012arXiv

Spin-filtering and charge- and spin-switching effects in a quantum wire with periodically attached stubs

Spin-dependent electron transport in a periodically stubbed quantum wire in the presence of Rashba spin-orbit interaction (SOI) is studied via the nonequilibrium Green's function method combined with the Landauer-Buttiker formalism. The coexistence of spin filtering, charge and spin switching are found in the considered system. The mechanism of these transport properties is revealed by analyzing the total charge density and spin-polarized density distributions in the stubbed quantum wire. Furthermore, periodic spin-density islands with high polarization are also found inside the stubs, owing to the interaction between the charge density islands and the Rashba SOI-induced effective magnetic field. The proposed nanostructure may be utilized to devise an all-electrical multifunctional spintronic device.

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preprint2011arXiv

Dependence of transport on adatom location for armchair-edge graphene nanoribbons

We study the transport property for armchair-edge graphene nanoribbons (AGNRs) with an adatom coupling to a semi-infinite quantum wire. Using the nonequilibrium Green's function approach with tight-binding approximation, we demonstrate that the tunneling current through the system is sensitively dependent on both the AGNR width and adatom location. Interestingly, when the adatom locates onto a carbon atom in the 3$j$th chain from the edge of a metallic AGNR, the system shows a transmission gap accompanied by a threshold voltage in $I-V$ curve like a semiconducting AGNR. This effect may be useful in scanning tunneling microscopy experimental characterization on graphene samples.

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preprint2011arXiv

Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads

We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Green's function (NGF) technique, it is demonstrated that, the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresistance (TMR) around zero bias voltage possesses a pronounced plateau structure for system with semiconducting 7-AGNR or metallic 8-AGNR in the absence of exchange splitting, but this plateau structure for 8-AGNR system is remarkably broader than that for 7-AGNR one. Interestingly, the increase of exchange splitting $Δ$ suppresses the amplitude of the structure for 7-AGNR system. However, the TMR is enhanced much for 8-AGNR system under the bias amplitude comparable to splitting strength. Further, the current-induced spin transfer torque (STT) for 7-AGNR system is systematically larger than that for 8-AGNR one. The findings here suggest the design of GNR-based spintronic devices by using a metallic AGNR, but it is more favorable to fabricate a current-controlled magnetic memory element by using a semiconducting AGNR.

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preprint2007arXiv

Transport properties for a Luttinger liquid wire with Rashba spin-orbit coupling and Zeeman splitting

We study the transport properties for a Luttinger-liquid (LL) quantum wire in the presence of both Rashba spin-orbit coupling (SOC) and a weak external in-plane magnetic field. The bosonized Hamiltonian of the system with an externally applied longitudinal electric field is established. And then the equations of motion for the bosonic phase fields are solved in the Fourier space, with which the both charge and spin conductivities for the system are calculated analytically based on the linear response theory. Generally, the ac conductivity is an oscillation function of the strengths of electron-electron interaction, Rashba SOC and magnetic field, as well as the driving frequency and the measurement position in the wire. Through analysis with some examples it is demonstrated that the modification on the conductivity due to electron-electron interactions is more remarkable than that due to SOC, while the effects of SOC and Zeeman splitting on the conductivity are very similar. The spin-polarized conductivities for the system in the absence of Zeeman effect or SOC are also discussed, respectively. The ratio of the spin-polarized conductivities $σ_\uparrow/σ_\downarrow$ is dependent of the electron-electron interactions for the system without SOC, while it is independent of the electron-electron interactions for the system without Zeeman splitting.

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