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Kristian S. Thygesen

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Published work

44 published item(s)

preprint2022arXiv

Computational exfoliation of atomically thin 1D materials with application to Majorana bound states

We introduce a computational database with calculated structural, thermodynamic, electronic, magnetic, and optical properties of 820 one-dimensional materials. The materials are systematically selected and exfoliated from experimental databases of crystal structures based on a dimensionality scoring parameter. The database is furthermore expanded by chemical element substitution in the materials. The materials are investigated in both their bulk form and as isolated one-dimensional components. We discuss the methodology behind the database, give an overview of some of the calculated properties, and look at patterns and correlations in the data. The database is furthermore applied in computational screening to identify materials, which could exhibit Majorana bound states.

preprint2021arXiv

Towards fully automatized GW band structure calculations: What we can learn from 60.000 self-energy evaluations

We analyze a data set comprising 370 GW band structures composed of 61716 quasiparticle (QP) energies of two-dimensional (2D) materials spanning 14 crystal structures and 52 elements. The data results from PAW plane wave based one-shot G$_0$W$_0$@PBE calculations with full frequency integration. We investigate the distribution of key quantities like the QP self-energy corrections and renormalization factor $Z$ and explore their dependence on chemical composition and magnetic state. The linear QP approximation is identified as a significant error source and propose schemes for controlling and drastically reducing this error at low computational cost. We analyze the reliability of the $1/N_\text{PW}$ basis set extrapolation and find that is well-founded with narrow distributions of $r^2$ peaked very close to 1. Finally, we explore the validity of the scissors operator approximation concluding that it is generally not valid for reasonable error tolerances. Our work represents a step towards the development of automatized workflows for high-throughput G$_0$W$_0$ band structure calculations for solids.

preprint2020arXiv

Anisotropic properties of monolayer 2D materials: an overview from the C2DB database

We analyze the occurrence of in-plane anisotropy in the electronic, magnetic, elastic and transport properties of more than one thousand 2D materials from the C2DB database. We identify hundreds of anisotropic materials and classify them according to their point group symmetry and degree of anisotropy. A statistical analysis reveals that a lower point group symmetry and a larger amount of different elements in the structure favour all types of anisotropies, which could be relevant for future materials design approaches. Besides, we identify novel compounds, predicted to be easily exfoliable from a parent bulk compound, with anisotropies that largely outscore those of already known 2D materials. Our findings provide a comprehensive reference for future studies of anisotropic response in atomically-thin crystals and point to new previously unexplored materials for the next generation of anisotropic 2D devices.

preprint2020arXiv

Conductance of quantum spin Hall edge states from first principles: the critical role of magnetic impurities and inter-edge scattering

The outstanding transport properties expected at the edge of two-dimensional time-reversal invariant topological insulators have proven to be challenging to realize experimentally, and have so far only been demonstrated in very short devices. In search for an explanation to this puzzling observation, we here report a full first-principles calculation of topologically protected transport at the edge of novel quantum spin Hall insulators - specifically, Bismuth and Antimony halides - based on the non-equilibrium Green's functions formalism. Our calculations unravel two different scattering mechanisms that may affect two-dimensional topological insulators, namely time-reversal symmetry breaking at vacancy defects and inter-edge scattering mediated by multiple co-operating impurities, possibly non-magnetic. We discuss their drastic consequences for typical non-local transport measurements as well as strategies to mitigate their negative impact. Finally, we provide an instructive comparison of the transport properties of topologically protected edge states to those of the trivial edge states in MoS$_2$ ribbons. Although we focus on a few specific cases (in terms of materials and defect types) our results should be representative for the general case and thus have significance beyond the systems studied here.

preprint2020arXiv

High throughput computational screening for 2D ferromagnetic materials: the critical role of anisotropy and local correlations

The recent observation of ferromagnetic order in two-dimensional (2D) materials has initiated a booming interest in the subject of 2D magnetism. In contrast to bulk materials, 2D materials can only exhibit magnetic order in the presence of magnetic anisotropy. In the present work we have used the Computational 2D Materials Database (C2DB) to search for new ferromagnetic 2D materials using the spinwave gap as a simple descriptor that accounts for the role of magnetic anisotropy. In addition to known compounds we find 12 novel insulating materials that exhibit magnetic order at finite temperatures. For these we evaluate the critical temperatures from classical Monte Carlo simulations of a Heisenberg model with exchange and anisotropy parameters obtained from first principles. Starting from 150 stable ferromagnetic 2D materials we find five candidates that are predicted to have critical temperatures exceeding that of CrI3. We also study the effect of Hubbard corrections in the framework of DFT+U and find that the value of U can have a crucial influence on the prediction of magnetic properties. Our work provides new insight into 2D magnetism and identifies a new set of promising monolayers for experimental investigation.

preprint2016arXiv

Defect Tolerant Monolayer Transition Metal Dichalcogenides

Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are termed defect tolerant. Here we provide a systematic first principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy while the TMDs based on group IV metals form only shallow defect levels and are thus predicted to be defect tolerant. Interestingly, all the defect sensitive TMDs have valence and conduction bands with very similar orbital composition. This indicates a bonding/anti-bonding nature of the gap which in turn suggests that dangling bonds will fall inside the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to non-polar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within the band gap.

preprint2016arXiv

Efficient many-body calculations of 2D materials using exact limits for the screened potential: Band gaps of MoS$_2$, hBN, and phosphorene

Calculating the quasiparticle (QP) band structure of two-dimensional (2D) materials within the GW self-energy approximation has proven to be a rather demanding computational task. The main reason is the strong $\mathbf{q}$-dependence of the 2D dielectric function around $\mathbf{q} = \mathbf{0}$ that calls for a much denser sampling of the Brillouin zone than is necessary for similar 3D solids. Here we use an analytical expression for the small $\mathbf{q}$-limit of the 2D response function to perform the BZ integral over the critical region around $\mathbf{q} = \mathbf{0}$. This drastically reduces the requirements on the $\mathbf{q}$-point mesh and implies a significant computational speed-up. For example, in the case of monolayer MoS$_2$, convergence of the $G_0W_0$ band gap to within $\sim 0.1\,\mathrm{eV}$ is achieved with $12\times 12$ $\mathbf{q}$-points rather than the $36\times 36$ mesh required with discrete BZ sampling techniques. We perform a critical assessment of the band gap of the three prototypical 2D semiconductors MoS$_2$, hBN, and phosphorene including the effect of self-consistency at the GW$_0$ and GW level. The method is implemented in the open source GPAW code.

preprint2016arXiv

Hubbard-$U$ corrected Hamiltonians for non-self-consistent random-phase approximation total-energy calculations: A study of ZnS, TiO$_2$, and NiO

In non-self-consistent calculations of the total energy within the random-phase approximation (RPA) for electronic correlation, it is necessary to choose a single-particle Hamiltonian whose solutions are used to construct the electronic density and non-interacting response function. Here we investigate the effect of including a Hubbard-$U$ term in this single-particle Hamiltonian, to better describe the on-site correlation of 3$d$ electrons in the transition metal compounds ZnS, TiO$_2$ and NiO. We find that the RPA lattice constants are essentially independent of $U$, despite large changes in the underlying electronic structure. We further demonstrate that the non-self-consistent RPA total energies of these materials have minima at nonzero $U$. Our RPA calculations find the rutile phase of TiO$_2$ to be more stable than anatase independent of $U$, a result which is consistent with experiments and qualitatively different to that found from calculations employing $U$-corrected (semi)local functionals. However we also find that the +$U$ term cannot be used to correct the RPA's poor description of the heat of formation of NiO.

preprint2015arXiv

Adiabatic-connection fluctuation-dissipation DFT for the structural properties of solids-the renormalized ALDA and electron gas kernels

We present calculations of the correlation energies of crystalline solids and isolated systems within the adiabatic-connection fluctuation-dissipation formulation of density-functional theory. We perform a quantitative comparison of a set of model exchange-correlation kernels originally derived for the homogeneous electron gas (HEG), including the recently-introduced renormalized adiabatic local-density approximation (rALDA) and also kernels which (a) satisfy known exact limits of the HEG, (b) carry a frequency dependence or (c) display a 1/$k^2$ divergence for small wavevectors. After generalizing the kernels to inhomogeneous systems through a reciprocal-space averaging procedure, we calculate the lattice constants and bulk moduli of a test set of 10 solids consisting of tetrahedrally-bonded semiconductors (C, Si, SiC), ionic compounds (MgO, LiCl, LiF) and metals (Al, Na, Cu, Pd). We also consider the atomization energy of the H$_2$ molecule. We compare the results calculated with different kernels to those obtained from the random-phase approximation (RPA) and to experimental measurements. We demonstrate that the model kernels correct the RPA's tendency to overestimate the magnitude of the correlation energy whilst maintaining a high-accuracy description of structural properties.

preprint2015arXiv

Anharmonic stabilization and band gap renormalization in the perovskite CsSnI$_3$

Amongst the X(Sn,Pb)Y$_3$ perovskites currently under scrutiny for their photovoltaic applications, the cubic B-$α$ phase of CsSnI$_3$ is arguably the best characterized experimentally. Yet, according to the standard harmonic theory of phonons, this deceptively simple phase should not exist at all due to rotational instabilities of the SnI$_6$ octahedra. Here, employing self-consistent phonon theory we show that these soft modes are stabilized at experimental conditions through anharmonic phonon-phonon interactions between the Cs ions and their iodine cages. We further calculate the renormalization of the electronic energies due to vibrations and find an unusual opening of the band gap, estimated as 0.24 and 0.11 eV at 500 and 300 K, which we attribute to the stretching of Sn-I bonds. Our work demonstrates the important role of temperature in accurately describing these materials.

preprint2015arXiv

Excitons in van der Waals heterostructures: The important role of dielectric screening

The existence of strongly bound excitons is one of the hallmarks of the newly discovered atomically thin semi-conductors. While it is understood that the large binding energy is mainly due to the weak dielectric screening in two dimensions (2D), a systematic investigation of the role of screening on 2D excitons is still lacking. Here we provide a critical assessment of a widely used 2D hydrogenic exciton model which assumes a dielectric function of the form ε(q) = 1 + 2παq, and we develop a quasi-2D model with a much broader applicability. Within the quasi-2D picture, electrons and holes are described as in-plane point charges with a finite extension in the perpendicular direction and their interaction is screened by a dielectric function with a non-linear q-dependence which is computed ab-initio. The screened interaction is used in a generalized Mott-Wannier model to calculate exciton binding energies in both isolated and supported 2D materials. For isolated 2D materials, the quasi-2D treatment yields results almost identical to those of the strict 2D model and both are in good agreement with ab-initio many-body calculations. On the other hand, for more complex structures such as supported layers or layers embedded in a van der Waals heterostructure, the size of the exciton in reciprocal space extends well beyond the linear regime of the dielectric function and a quasi-2D description has to replace the 2D one. Our methodology has the merit of providing a seamless connection between the strict 2D limit of isolated monolayer materials and the more bulk-like screening characteristics of supported 2D materials or van der Waals heterostructures.

preprint2015arXiv

Plasmons on the edge of MoS2 nanostructures

Using ab initio calculations we predict the existence of one-dimensional (1D), atomically confined plasmons at the edges of a zigzag MoS2 nanoribbon. The strongest plasmon originates from a metallic edge state localized on the sulfur dimers decorating the Mo edge of the ribbon. A detailed analysis of the dielectric function reveals that the observed deviations from the ideal 1D plasmon behavior result from single-particle transitions between the metallic edge state and the valence and conduction bands of the MoS2 sheet. The Mo and S edges of the ribbon are clearly distinguishable in calculated spatially resolved electron energy loss spectrum owing to the different plasmonic properties of the two edges. The edge plasmons could potentially be utilized for tuning the photocatalytic activity of MoS2 nanoparticles.

preprint2015arXiv

Simple Screened Hydrogen Model of Excitons in Two-Dimensional Materials

We present a generalized hydrogen model for the binding energies ($E_B$) of excitons in two-dimensional (2D) materials that sheds light on the fundamental differences between excitons in two and three dimensions. In contrast to the well-known hydrogen model of three-dimensional (3D) excitons, the description of 2D excitons is complicated by the fact that the screening cannot be assumed to be local. We show that one can consistently define an effective 2D dielectric constant by averaging the screening over the extend of the exciton. For an ideal 2D semiconductor this leads to a simple expression for $E_B$ that only depends on the excitonic mass and the 2D polarizability $α$. The model is shown to produce accurate results for 51 transition metal dichalcogenides. Remarkably, over a wide range of polarizabilities the expression becomes independent of the mass and we obtain $E_B^{2D}\approx3/(4πα)$, which explains the recently observed linear scaling of exciton binding energies with band gap. It is also shown that the model accurately reproduces the non-hydrogenic Rydberg series in WS$_2$ and can account for screening from the environment.

preprint2014arXiv

Accurate Ground State Energies of Solids and Molecules from Time Dependent Density Functional Theory

We demonstrate that ground state energies approaching chemical accuracy can be obtained by combining the adiabatic connection fluctuation-dissipation theorem (ACFDT) with time-dependent density functional theory (TDDFT). The key ingredient is a renormalization scheme, which eliminates the divergence of the correlation hole characteristic of any local kernel. This new class of renormalized kernels gives a significantly better description of the short-range correlations in covalent bonds compared to the random phase approximation (RPA) and yields a four fold improvement of RPA binding energies in both molecules and solids. We also consider examples of barrier heights in chemical reactions, molecular adsorption and graphene interacting with metal surfaces, which are three examples where RPA has been successful. In these cases, the renormalized kernel provides results that are of equal quality or even slightly better than RPA, with a similar computational cost.

preprint2014arXiv

Dynamical Image Charge Effect in Molecular Tunnel Junctions: Beyond Energy Level Alignment

When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model for the image potential applies. Here we investigate how the finite IC formation time affects charge transport through a molecule suspended between two electrodes. For a single level model, an analytical treatment shows that the conductance is suppressed by a factor $Z^2$ (compared to the static IC approximation) where $Z$ is the quasiparticle renormalization factor. We show that $Z$ can be expressed either in terms of the plasma frequency of the electrode or as the overlap between the ground states of the electrode with and without an electron on the molecule. First-principles GW calculations for benzene-diamine connected to gold electrodes show that the dynamical corrections can reduce the conductance by more than a factor of two.

preprint2014arXiv

How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS$_2$

We present first-principles many-body calculations of the dielectric constant, quasiparticle band structure, and optical absorption spectrum of monolayer MoS$_2$ using a supercell approach. As the separation between the periodically repeated layers is increased, the dielectric function of the layer develops a strong $q$ dependence around $q=0$. This implies that denser $k$-point grids are required to converge the band gap and exciton binding energies when large supercells are used. In the limit of infinite layer separation, here obtained using a truncated Coulomb interaction, a $45\times45$ $k$-point grid is needed to converge the G$_0$W$_0$ band gap and exciton energy to within 0.1 eV. We provide an extensive comparison with previous studies and explain agreement and variations in the results. It is demonstrated that too coarse $k$-point sampling and the interactions between the repeated layers have opposite effects on the band gap and exciton energy, leading to a fortuitous error cancellation in the previously published results.

preprint2014arXiv

Plasmonic eigenmodes in individual and bow-tie graphene nanotriangles

Serving as a new two-dimensional plasmonic material, graphene has stimulated an intensive study of its optical properties which benefit from the unique electronic band structure of the underlying honeycomb lattice of carbon atoms. In classical electrodynamics, nanostructured graphene is commonly modeled by the computationally demanding problem of a three-dimensional conducting film of atomic-scale thickness. Here, we propose an efficient alternative two-dimensional electrostatic approach where all the calculation procedures are restricted to the plane of the graphene sheet. To explore possible quantum effects, we perform tight-binding calculations, adopting a random-phase approximation. We investigate the multiple plasmon modes in triangles of graphene, treating the optical response classically as well as quantum mechanically in the case of both armchair and zigzag edge termination of the underlying atomic lattice. Compared to the classical plasmonic spectrum which is "blind" to the edge termination, we find that the quantum plasmon frequencies exhibit blueshifts in the case of armchair edge termination, while redshifts are found for zigzag edges. Furthermore, we find spectral features in the zigzag case which are associated with electronic edge states not present for armchair termination. Merging pairs of such triangles into dimers, the plasmon hybridization leads to energy splitting in accordance with plasmon-hybridization theory, with a lower energy for the antisymmetric modes and a smaller splitting for modes with less confinement to the gap region. The hybridization appears strongest in classical calculations while the splitting is lower for armchair edges and even more reduced for zigzag edges. Our various results illustrate a surprising phenomenon: Even 20 nm large graphene structures clearly exhibit quantum plasmonic features due to atomic-scale details in the edge termination.

preprint2014arXiv

Static correlation beyond the random phase approximation: Dissociating H2 with the Bethe-Salpeter equation and time-dependent GW

We investigate various approximations to the correlation energy of a H$_2$ molecule in the dissociation limit, where the ground state is poorly described by a single Slater determinant. The correlation energies are derived from the density response function and it is shown that response functions derived from Hedin's equations (Random Phase Approximation (RPA), Time-dependent Hartree-Fock (TDHF), Bethe-Salpeter equation (BSE), and Time-Dependent GW (TDGW)) all reproduce the correct dissociation limit. We also show that the BSE improves the correlation energies obtained within RPA and TDHF significantly for intermediate binding distances. A Hubbard model for the dimer allow us to obtain exact analytical results for the various approximations, which is readily compared with the exact diagonalization of the model. Moreover, the model is shown to reproduce all the qualitative results from the \textit{ab initio} calculations and confirms that BSE greatly improves the RPA and TDHF results despite the fact that the BSE excitation spectrum breaks down in the dissociation limit. In contrast, Second Order Screened Exchange (SOSEX) gives a poor description of the dissociation limit, which can be attributed to the fact that it cannot be derived from an irreducible response function.

preprint2013arXiv

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles

We theoretically study the acoustic phonon limited mobility in n-doped two-dimensional MoS2 for temperatures T < 100 K and high carrier densities using the Boltzmann equation and first-principles calculations of the acoustic electron-phonon (el-ph) interaction. In combination with a continuum elastic model, analytic expressions and the coupling strengths for the deformation potential and piezoelectric interactions are established. We furthermore show that the deformation potential interaction has contributions from both normal and umklapp processes and that the latter contribution is only weakly affected by carrier screening. Consequently, the calculated mobilities show a transition from a high-temperature μT^{-1} behavior to a stronger μT^{-4} behavior in the low-temperature Bloch-Gruneisen regime characteristic of unscreened deformation potential scattering. Intrinsic mobilities in excess of 10^5 cm^2 V^{-1} s^{-1} are predicted at T < 10 K and high carrier densities (n > 10^{11} cm^{-2}). At 100 K, the mobility does not exceed ~7 x 10^3 cm2 V^{-1} s^{-1}. Our findings provide new and important understanding of the acoustic el-ph interaction and its screening by free carriers, and is of high relevance for the understanding of acoustic phonon limited mobilities in general.

preprint2013arXiv

Beyond the random phase approximation: Improved description of short range correlation by a renormalized adiabatic local density approximation

We assess the performance of a recently proposed renormalized adiabatic local density approximation (rALDA) for \textit{ab initio} calculations of electronic correlation energies in solids and molecules. The method is an extension of the random phase approximation (RPA) derived from time-dependent density functional theory and the adiabatic connection fluctuation-dissipation theorem and contains no fitted parameters. The new kernel is shown to preserve the accurate description of dispersive interactions from RPA while significantly improving the description of short range correlation in molecules, insulators, and metals. For molecular atomization energies the rALDA is a factor of 7(4) better than RPA(PBE) when compared to experiments, and a factor of 3(1.5) better than RPA(PBE) for cohesive energies of solids. For transition metals the inclusion of full shell semi-core states is found to be crucial for both RPA and rALDA calculations and can improve the cohesive energies by up to 0.4 eV. Finally we discuss straightforward generalizations of the method, which might improve results even further.

preprint2013arXiv

Electron transport across a metal/MoS$_2$ interface: dependence on contact area and binding distance

We investigate the nature of electron transport through monolayer molybdenum dichalcogenides (MoX$_2$, X=S, Se) suspended between Au and Ti metallic contacts. The monolayer is placed ontop of the close-packed surfaces of the metal electrodes and we focus on the role of the metal-MoX$_2$ binding distance and the contact area. Based on \emph{ab initio} transport calculations we identify two different scattering mechanisms which depend differently on the metal-MoX$_2$ binding distance: (i) An interface resistance between the metal and the supported part of MoX$_2$ which decreases with decreasing binding distance and increasing contact area. (ii) An edge resistance across the 1D interface between metal-supported and free-standing MoX$_2$ which increases with decreasing binding distance and is independent on contact area. The origin of the edge resistance is a metal-induced potential shift within the MoX$_2$ layer. The optimal metal thus depends on the junction geometry. In the case of MoS$_2$, we find that for short contacts, L$<$6 nm, Ti electrodes (with short binding distance) gives the lowest resistance, while for longer contacts, Au (large binding distance) is a better electrode metal.

preprint2013arXiv

Hybridization of quantum plasmon modes in coupled nanowires: From the classical to the tunneling regime

We present full quantum mechanical calculations of the hybridized plasmon modes of two nanowires at small separation, providing real space visualization of the modes in the transition from the classical to the quantum tunneling regime. The plasmon modes are obtained as certain eigenfunctions of the dynamical dielectric function which is computed using time dependent density functional theory (TDDFT). For freestanding wires, the energy of both surface and bulk plasmon modes deviate from the classical result for low wire radii and high momentum transfer due to effects of electron spill-out, non-local response, and coupling to single-particle transitions. For the wire dimer the shape of the hybridized plasmon modes are continuously altered with decreasing separation, and below 6 Å the energy dispersion of the modes deviate from classical results due to the onset of weak tunneling. Below 2-3 Å separation this mode is replaced by a charge-transfer plasmon which blue shifts with decreasing separation in agreement with experiment, and marks the onset of the strong tunneling regime.

preprint2013arXiv

Plasmons in metallic monolayer and bilayer transition metal dichalcogenides

We study the collective electronic excitations in metallic single- and bilayer transition metal dichalcogenides (TMDCs) using time dependent density functional theory in the random phase approximation. For very small momentum transfers (below $q\approx0.02$~Å$^{-1}$) the plasmon dispersion follows the $\sqrt{q}$ behavior expected for free electrons in two dimensions. For larger momentum transfer the plasmon energy is significantly red shifted due to screening by interband transitions. At around $q\approx 0.1$ Å$^{-1}$ the plasmon enters the dissipative electron-hole continuum and the plasmon dispersions flatten out at an energy around 0.6-1.1 eV, depending on the material. Using bilayer NbSe$_2$ as example, we show that the plasmon modes of a bilayer structure take the form of symmetric and anti-symmetric hybrids of the single-layer modes. The spatially anti-symmetric mode is rather weak with a linear dispersion tending to zero for $q=0$ while the energy of the symmetric mode follows the single-layer mode dispersion with a slight blue shift.

preprint2013arXiv

Quantitatively Accurate Calculations of Conductance and Thermopower of Molecular Junctions

Thermopower measurements of molecular junctions have recently gained interest as a characterization technique that supplements the more traditional conductance measurements. Here we investigate the electronic conductance and thermopower of benzenediamine (BDA) and benzenedicarbonitrile (BDCN) connected to gold electrodes using first-principles calculations. We find excellent agreement with experiments for both molecules when exchange-correlation effects are described by the many-body GW approximation. In contrast, results from standard density functional theory (DFT) deviate from experiments by up to two orders of magnitude. The failure of DFT is particularly pronounced for the n-type BDCN junction due to the severe underestimation of the lowest unoccupied molecular orbital (LUMO). The quality of the DFT results can be improved by correcting the molecular energy levels for self-interaction errors and image charge effects. Finally, we show that the conductance and thermopower of the considered junctions are relatively insensitive to the metal-molecule bonding geometry. Our results demonstrate that electronic and thermoelectric properties of molecular junctions can be predicted from first-principles calculations when exchange-correlation effects are taken properly into account.

preprint2013arXiv

Quasiparticle GW calculations for solids, molecules and 2D materials

We present a plane wave implementation of the G0W0 approximation within the projector augmented wave method code GPAW. The computed band gaps of ten bulk semiconductors and insulators deviate on average by 0.2 eV (~ 5 %) from the experimental values - the only exception being ZnO where the calculated band gap is around 1 eV too low. Similar relative deviations are found for the ionization potentials of a test set of 32 small molecules. The importance of substrate screening for a correct description of quasiparticle energies and Fermi velocities in supported 2D materials is illustrated by the case of graphene/h-BN interfaces. Due to the long range Coulomb interaction between periodically repeated images, the use of a truncated interaction is found to be essential for obtaining converged results for 2D materials. For all systems studied, a plasmon pole approximation is found to reproduce the full frequency results to within 0.2 eV with a significant gain in computational speed. As alternative to G0W0, the efficient local GLLBSC potential yields significantly better results than the PBE0 hybrid. For completeness, we provide a mathematically rigorous and physically transparent introduction to the notion of quasiparticle states.

preprint2013arXiv

Spatially resolved quantum plasmon modes in metallic nano-films from first principles

Electron energy loss spectroscopy (EELS) can be used to probe plasmon excitations in nanostructured materials with atomic-scale spatial resolution. For structures smaller than a few nanometers quantum effects are expected to be important, limiting the validity of widely used semi-classical response models. Here we present a method to identify and compute spatially resolved plasmon modes from first principles based on a spectral analysis of the dynamical dielectric function. As an example we calculate the plasmon modes of 0.5-4 nm thick Na films and find that they can be classified as (conventional) surface modes, sub-surface modes, and a discrete set of bulk modes resembling standing waves across the film. We find clear effects of both quantum confinement and non-local response. The quantum plasmon modes provide an intuitive picture of collective excitations of confined electron systems and offer a clear interpretation of spatially resolved EELS spectra.

preprint2013arXiv

The random phase approximation applied to solids, molecules, and graphene-metal interfaces: From weak to strong binding regimes

The random phase approximation (RPA) is attracting renewed interest as a universal and accurate method for first-principles total energy calculations. The RPA naturally accounts for long-range dispersive forces without compromising accuracy for short range interactions making the RPA superior to semi-local and hybrid functionals in systems dominated by weak van der Waals or mixed covalent-dispersive interactions. In this work we present plane wave-based RPA calculations for a broad collection of systems with bond types ranging from strong covalent to van der Waals. Our main result is the RPA potential energy surfaces of graphene on the Cu(111), Ni(111), Co(0001), Pd(111), Pt(111), Ag(111), Au(111), and Al(111) metal surfaces, which represent archetypical examples of metal-organic interfaces. Comparison with semi-local density approximations and a non-local van der Waals functional show that only the RPA captures both the weak covalent and dispersive forces which are equally important for these systems. We benchmark our implementation in the GPAW electronic structure code by calculating cohesive energies of graphite and a range of covalently bonded solids and molecules as well as the dissociation curves of H2 and H2+. These results show that RPA with orbitals from the local density approximation suffers from delocalization errors and systematically underestimates covalent bond energies yielding similar or lower accuracy than the Perdew-Burke-Ernzerhof (PBE) functional for molecules and solids, respectively.

preprint2012arXiv

Ab-initio non-equilibrium quantum transport and forces with the real space projector augmented wave method

We present an efficient implemention of a non-equilibrium Green function (NEGF) method for self-consistent calculations of electron transport and forces in nanostructured materials. The electronic structure is described at the level of density functional theory (DFT) using the projector augmented wave method (PAW) to describe the ionic cores and an atomic orbital basis set for the valence electrons. External bias and gate voltages are treated in a self-consistent manner and the Poisson equation with appropriate boundary conditions is solved in real space. Contour integration of the Green function and parallelization over k-points and real space makes the code highly efficient and applicable to systems containing several hundreds of atoms. The method is applied to a number of different systems demonstrating the effects of bias and gate voltages, multiterminal setups, non-equilibrium forces, and spin transport.

preprint2012arXiv

Conventional and Acoustic Surface Plasmons on Noble Metal Surfaces: A Time-dependent Density Functional Theory Study

First-principles calculations of the conventional and acoustic surface plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are presented. The effect of $s-d$ interband transitions on both types of plasmons is investigated by comparing results from the local density approximation and an orbital dependent exchange-correlation (xc) potential that improves the position and width of the $d$ bands. The plasmon dispersions calculated with the latter xc-potential agree well with electron energy loss spectroscopy (EELS) experiments. For both the CSP and ASP, the same trend of Cu$<$Au$<$Ag is found for the plasmon energies and is attributed to the reduced screening by interband transitions from Cu, to Au and Ag. This trend for the ASP, however, contradicts a previous model prediction. While the ASP is seen as a weak feature in the EELS, it can be clearly identified in the static and dynamic dielectric band structure.

preprint2012arXiv

Extending the random-phase approximation for electronic correlation energies: The renormalized adiabatic local density approximation

The adiabatic connection fluctuation-dissipation theorem with the random phase approximation (RPA) has recently been applied with success to obtain correlation energies of a variety of chemical and solid state systems. The main merit of this approach is the improved description of dispersive forces while chemical bond strengths and absolute correlation energies are systematically underestimated. In this work we extend the RPA by including a parameter-free renormalized version of the adiabatic local density (ALDA) exchange-correlation kernel. The renormalization consists of a (local) truncation of the ALDA kernel for wave vectors $q>2k_F$, which is found to yield excellent results for the homogeneous electron gas. In addition, the kernel significantly improves both the absolute correlation energies and atomization energies of small molecules over RPA and ALDA. The renormalization can be straightforwardly applied to other adiabatic local kernels.

preprint2012arXiv

First-principles study of the phonon-limited mobility in n-type single-layer MoS2

In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon interaction, the deformation potentials and Fröhlich interaction in the isolated MoS2 layer are determined. We find that the calculated room-temperature mobility of ~410 cm^2 V^-1 s^-1 is dominated by optical phonon scattering via deformation potential couplings and the Fröhlich interaction with the deformation potentials to the intravalley homopolar and intervalley longitudinal optical phonons given by 4.1 x 10^8 eV/cm and 2.6 x 10^8 eV/cm, respectively. The mobility is weakly dependent on the carrier density and follows a μ~ T^-1 temperature dependence with γ= 1.69 at room temperature. It is shown that a quenching of the characteristic homopolar mode which is likely to occur in top-gated samples, boosts the mobility with 70 cm^2 V^-1 s^-1 and can be observed as a decrease in the exponent to γ= 1.52. Our findings indicate that the intrinsic phonon-limited mobility is approached in samples where a high-kappa dielectric that effectively screens charge impurities is used as gate oxide.

preprint2012arXiv

Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study

Using the nonequilibrium Green function formalism combined with density functional theory, we study finite-bias quantum transport in Ni/Gr_n/Ni vertical heterostructures where $n$ graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that recently predicted "pessimistic" magnetoresistance of 100% for $n \ge 5$ junctions at zero bias voltage $V_b \rightarrow 0$, persists up to $V_b \simeq 0.4$ V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the $n=5$ junction exhibits a pronounced negative differential resistance as the bias voltage is increased from $V_b=0$ V to $V_b \simeq 0.5$ V. We confirm that both of these nonequilibrium effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers.

preprint2012arXiv

Optical properties of bulk semiconductors and graphene/boron-nitride: The Bethe-Salpeter equation with derivative discontinuity-corrected DFT energies

We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method GPAW. Single-particle energies and wave functions are obtained from the GLLBSC functional which explicitly includes the derivative discontinuity, is computationally inexpensive, and yields excellent fundamental gaps. Electron-hole interactions are included through the BSE using the statically screened interaction evaluated in the random phase approximation. For a representative set of semiconductors and insulators we find excellent agreement with experiments for the dielectric functions, onset of absorption, and lowest excitonic features. For the two-dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface, we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 eV and 0.7 eV, respectively, compared to freestanding h-BN. This reduction is due to image charge screening which shows up in the GLLBSC calculation as a reduction (vanishing) of the derivative discontinuity.

preprint2012arXiv

Unraveling the acoustic electron-phonon interaction in graphene

Using a first-principles approach we calculate the acoustic electron-phonon couplings in graphene for the transverse (TA) and longitudinal (LA) acoustic phonons. Analytic forms of the coupling matrix elements valid in the long-wavelength limit are found to give an almost quantitative description of the first-principles based matrix elements even at shorter wavelengths. Using the analytic forms of the coupling matrix elements, we study the acoustic phonon-limited carrier mobility for temperatures 0-200 K and high carrier densities of 10^{12}-10^{13} cm^{-2}. We find that the intrinsic effective acoustic deformation potential of graphene is Ξ_eff = 6.8 eV and that the temperature dependence of the mobility μ~ T^{-α} increases beyond an α= 4 dependence even in the absence of screening when the full coupling matrix elements are considered. The large disagreement between our calculated deformation potential and those extracted from experimental measurements (18-29 eV) indicates that additional or modified acoustic phonon-scattering mechanisms are at play in experimental situations.

preprint2011arXiv

Computational design of chemical nanosensors: Transition metal doped single-walled carbon nanotubes

We present a general approach to the computational design of nanostructured chemical sensors. The scheme is based on identification and calculation of microscopic descriptors (design parameters) which are used as input to a thermodynamic model to obtain the relevant macroscopic properties. In particular, we consider the functionalization of a (6,6) metallic armchair single-walled carbon nanotube (SWNT) by nine different 3d transition metal (TM) atoms occupying three types of vacancies. For six gas molecules (N_{2}, O_{2}, H_{2}O, CO, NH_{3}, H_{2}S) we calculate the binding energy and change in conductance due to adsorption on each of the 27 TM sites. For a given type of TM functionalization, this allows us to obtain the equilibrium coverage and change in conductance as a function of the partial pressure of the "target" molecule in a background of atmospheric air. Specifically, we show how Ni and Cu doped metallic (6,6) SWNTs may work as effective multifunctional sensors for both CO and NH_{3}. In this way, the scheme presented allows one to obtain macroscopic device characteristics and performance data for nanoscale (in this case SWNT) based devices.

preprint2011arXiv

First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes

We overview nonequilibrium Green function combined with density functional theory (NEGF-DFT) modeling of independent electron and phonon transport in nanojunctions with applications focused on a new class of thermoelectric devices where a single molecule is attached to two metallic zigzag graphene nanoribbons (ZGNRs) via highly transparent contacts. Such contacts make possible injection of evanescent wavefunctions from ZGNRs, so that their overlap within the molecular region generates a peak in the electronic transmission. Additionally, the spatial symmetry properties of the transverse propagating states in the ZGNR electrodes suppress hole-like contributions to the thermopower. Thus optimized thermopower, together with diminished phonon conductance through a ZGNR/molecule/ZGNR inhomogeneous structure, yields the thermoelectric figure of merit ZT~0.5 at room temperature and 0.5<ZT<2.5 below liquid nitrogen temperature. The reliance on evanescent mode transport and symmetry of propagating states in the electrodes makes the electronic-transport-determined power factor in this class of devices largely insensitive to the type of sufficiently short conjugated organic molecule, which we demonstrate by showing that both 18-annulene and C10 molecule sandwiched by the two ZGNR electrodes yield similar thermopower. Thus, one can search for molecules that will further reduce the phonon thermal conductance (in the denominator of ZT) while keeping the electronic power factor (in the nominator of ZT) optimized. We also show how often employed Brenner empirical interatomic potential for hydrocarbon systems fails to describe phonon transport in our single-molecule nanojunctions when contrasted with first-principles results obtained via NEGF-DFT methodology.

preprint2011arXiv

Linear density response function in the projector-augmented wave method: Applications to solids, surfaces, and interfaces

We present an implementation of the linear density response function within the projector-augmented wave (PAW) method with applications to the linear optical and dielectric properties of both solids, surfaces, and interfaces. The response function is represented in plane waves while the single-particle eigenstates can be expanded on a real space grid or in atomic orbital basis for increased efficiency. The exchange-correlation kernel is treated at the level of the adiabatic local density approximation (ALDA) and crystal local field effects are included. The calculated static and dynamical dielectric functions of Si, C, SiC, AlP and GaAs compare well with previous calculations. While optical properties of semiconductors, in particular excitonic effects, are generally not well described by ALDA, we obtain excellent agreement with experiments for the surface loss function of the Mg(0001) surface with plasmon energies deviating by less than 0.2 eV. Finally, we apply the method to study the influence of substrates on the plasmon excitations in graphene. On SiC(0001), the long wavelength $π$ plasmons are significantly damped although their energies remain almost unaltered. On Al(111) the $π$ plasmon is completely quenched due to the coupling to the metal surface plasmon.

preprint2011arXiv

Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT

We study thermoelectric devices where a single 18-annulene molecule is connected to metallic zigzag graphene nanoribbons (ZGNR) via highly transparent contacts that allow for injection of evanescent wave functions from ZGNRs into the molecular ring. Their overlap generates a peak in the electronic transmission, while ZGNRs additionally suppress hole-like contributions to the thermopower. Thus optimized thermopower, together with suppression of phonon transport through ZGNR-molecule-ZGNR structure, yield the thermoelectric figure of merit ZT ~ 0.5 at room temperature and 0.5 < ZT < 2.5 below liquid nitrogen temperature. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show how the transmission resonance can also be manipulated by the voltage applied to a third ZGNR electrode, acting as the top gate covering molecular ring, to tune the value of ZT.

preprint2011arXiv

Observation of Quantum Interference in Molecular Charge Transport

As the dimensions of a conductor approach the nano-scale, quantum effects will begin to dominate its behavior. This entails the exciting possibility of controlling the conductance of a device by direct manipulation of the electron wave function. Such control has been most clearly demonstrated in mesoscopic semiconductor structures at low temperatures. Indeed, the Aharanov-Bohm effect, conductance quantization and universal conductance fluctuations are direct manifestations of the electron wave nature. However, an extension of this concept to more practical emperatures has not been achieved so far. As molecules are nano-scale objects with typical energy level spacings (~eV) much larger than the thermal energy at 300 K (~25 meV), they are natural candidates to enable such a break-through. Fascinating phenomena including giant magnetoresistance, Kondo effects and conductance switching, have previously been demonstrated at the molecular level. Here, we report direct evidence for destructive quantum interference in charge transport through two-terminal molecular junctions at room temperature. Furthermore, we show that the degree of interference can be controlled by simple chemical modifications of the molecule. Not only does this provide the experimental demonstration of a new phenomenon in quantum charge transport, it also opens the road for a new type of molecular devices based on chemical or electrostatic control of quantum interference.

preprint2010arXiv

Electrochemical control of quantum interference in anthraquinone-based molecular switches

Using first-principles calculations we analyze the electronic transport properties of a recently proposed anthraquinone based electrochemical switch. Robust conductance on/off ratios of several orders of magnitude are observed due to destructive quantum interference present in the anthraquinone, but absent in the hydroquinone molecular bridge. A simple explanation of the interference effect is achieved by transforming the frontier molecular orbitals into localized molecular orbitals thereby obtaining a minimal tight-binding model describing the transport in the relevant energy range in terms of hopping via the localized orbitals. The topology of the tight-binding model, which is dictated by the symmetries of the molecular orbitals, determines the amount of quantum interference.

preprint2010arXiv

Improving Transition Voltage Spectroscopy of Molecular Junctions

Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where $\ln(I/V^2)$ is plotted against $1/V$ and relate the voltage at the minimum, $V_{\rm min}$, to the closest molecular level. Importantly, $V_{\rm min}$, is approximately half the voltage required to see a peak in the $dI/dV$ curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, $V_{\rm min}^{(α)}$ by finding the minimum of $\ln(I/V^α)$ with $α<2$. On the basis of a simple Lorentzian transmission model we analyze theoretical {\it ab initio} as well as experimental $I-V$ curves and show that the voltage required to determine the molecular levels can be reduced by $\sim 30%$ as compared to conventional TVS. As for conventional TVS, the symmetry/asymmetry of the molecular junction needs to be taken into account in order to gain quantitative information. We show that the degree of asymmetry may be estimated from a plot of $V_{\rm min}^{(α)}$ vs. $α$.

preprint2010arXiv

Quantifying Transition Voltage Spectroscopy of Molecular Junctions

Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab-initio calculations of the non-linear current voltage relations for a broad class of single-molecule transport junctions in order to assess the applicability and limitations of TVS. We find, that in order to fully utilize TVS as a quantitative spectroscopic tool, it is important to consider asymmetries in the coupling of the molecule to the two electrodes. When this is taken properly into account, the relation between the transition voltage and the energy of the molecular orbital closest to the Fermi level closely follows the trend expected from a simple, analytical model.

preprint2007arXiv

Non-equilibrium GW approach to quantum transport in nano-scale contacts

Correlation effects within the GW approximation have been incorporated into the Keldysh non-equilibrium transport formalism. We show that GW describes the Kondo effect and the zero-temperature transport properties of the Anderson model fairly well. Combining the GW scheme with density functional theory and a Wannier function basis set, we illustrate the impact of correlations by computing the I-V characteristics of a hydrogen molecule between two Pt chains. Our results indicate that self-consistency is fundamental for the calculated currents, but that it tends to wash out satellite structures in the spectral function.