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Thomas Olsen

Thomas Olsen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.chem-phcond-mat.mes-hallcond-mat.str-elphysics.comp-phcond-mat.dis-nn

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Published work

23 published item(s)

preprint2023arXiv

Plane wave implementation of the magnetic force theorem for magnetic exchange constants: Application to bulk Fe, Co and Ni

We present a plane wave implementation of the magnetic force theorem, which provides a first principles framework for extracting exchange constants parameterizing a classical Heisenberg model description of magnetic materials. It is shown that the full microscopic exchange tensor may be expressed in terms of the static Kohn-Sham susceptibility tensor and the exchange-correlation magnetic field. This formulation allows one to define arbitrary magnetic sites localized to predefined spatial regions, hence rendering the problem of finding Heisenberg parameters independent of any orbital decomposition of the problem. The susceptibility is calculated in a plane wave basis, which allows for systematic convergence with respect to unoccupied bands and spatial representation. We then apply the method to the well-studied problem of calculating adiabatic spin wave spectra for bulk Fe, Co and Ni, finding good agreement with previous calculations. In particular, we utilize the freedom of defining magnetic sites to show that the calculated Heisenberg parameters are robust towards changes in the definition of magnetic sites. This demonstrates that the magnetic sites can be regarded as well-defined and thus asserts the relevance of the Heisenberg model description despite the itinerant nature of the magnetic state.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic properties of monolayer 2D materials: an overview from the C2DB database

We analyze the occurrence of in-plane anisotropy in the electronic, magnetic, elastic and transport properties of more than one thousand 2D materials from the C2DB database. We identify hundreds of anisotropic materials and classify them according to their point group symmetry and degree of anisotropy. A statistical analysis reveals that a lower point group symmetry and a larger amount of different elements in the structure favour all types of anisotropies, which could be relevant for future materials design approaches. Besides, we identify novel compounds, predicted to be easily exfoliable from a parent bulk compound, with anisotropies that largely outscore those of already known 2D materials. Our findings provide a comprehensive reference for future studies of anisotropic response in atomically-thin crystals and point to new previously unexplored materials for the next generation of anisotropic 2D devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Conductance of quantum spin Hall edge states from first principles: the critical role of magnetic impurities and inter-edge scattering

The outstanding transport properties expected at the edge of two-dimensional time-reversal invariant topological insulators have proven to be challenging to realize experimentally, and have so far only been demonstrated in very short devices. In search for an explanation to this puzzling observation, we here report a full first-principles calculation of topologically protected transport at the edge of novel quantum spin Hall insulators - specifically, Bismuth and Antimony halides - based on the non-equilibrium Green's functions formalism. Our calculations unravel two different scattering mechanisms that may affect two-dimensional topological insulators, namely time-reversal symmetry breaking at vacancy defects and inter-edge scattering mediated by multiple co-operating impurities, possibly non-magnetic. We discuss their drastic consequences for typical non-local transport measurements as well as strategies to mitigate their negative impact. Finally, we provide an instructive comparison of the transport properties of topologically protected edge states to those of the trivial edge states in MoS$_2$ ribbons. Although we focus on a few specific cases (in terms of materials and defect types) our results should be representative for the general case and thus have significance beyond the systems studied here.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gapless hinge states from adiabatic pumping of axion coupling

We demonstrate that chiral hinge modes naturally emerge in insulating crystals undergoing a slow cyclic evolution that changes the Chern-Simons axion angle $θ$ by $2π$. This happens when the surface (not just the bulk) returns to its initial state at the end of the cycle, in which case it must pass through a metallic state to dispose of the excess quantum of surface anomalous Hall conductivity pumped from the bulk. If two adjacent surfaces become metallic at different points along the cycle, there is an interval in which they are in topologically distinct insulating states, with chiral modes propagating along the connecting hinge. We illustrate these ideas for a tight-binding model consisting of coupled layers of the Haldane model with alternating parameters. The surface topology is determined in a slab geometry using two different markers, surface anomalous Hall conductivity and surface-localized charge pumping (flow of surface-localized Wannier bands), and we find that both correctly predict the appearance of gapless hinge modes in a rod geometry. When viewing the axion pump as a four-dimensional (4D) crystal with one synthetic dimension, the hinge modes trace Fermi arcs in the Brillouin zone of the 2D hinge connecting a pair of 3D surfaces of the 4D crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High throughput computational screening for 2D ferromagnetic materials: the critical role of anisotropy and local correlations

The recent observation of ferromagnetic order in two-dimensional (2D) materials has initiated a booming interest in the subject of 2D magnetism. In contrast to bulk materials, 2D materials can only exhibit magnetic order in the presence of magnetic anisotropy. In the present work we have used the Computational 2D Materials Database (C2DB) to search for new ferromagnetic 2D materials using the spinwave gap as a simple descriptor that accounts for the role of magnetic anisotropy. In addition to known compounds we find 12 novel insulating materials that exhibit magnetic order at finite temperatures. For these we evaluate the critical temperatures from classical Monte Carlo simulations of a Heisenberg model with exchange and anisotropy parameters obtained from first principles. Starting from 150 stable ferromagnetic 2D materials we find five candidates that are predicted to have critical temperatures exceeding that of CrI3. We also study the effect of Hubbard corrections in the framework of DFT+U and find that the value of U can have a crucial influence on the prediction of magnetic properties. Our work provides new insight into 2D magnetism and identifies a new set of promising monolayers for experimental investigation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Theory and simulations of critical temperatures in CrI3 and other 2D materials: Easy-axis magnetic order and easy-plane Kosterlitz-Thouless transitions

The recent observations of ferromagnetic order in several two-dimensional (2D) materials have generated an enormous interest in the physical mechanisms underlying 2D magnetism. In the present prospective article we show that Density Functional Theory (DFT) combined with either classical Monte Carlo simulations or renormalized spin-wave theory can predict Curie temperatures for ferromagnetic insulators that are in quantitative agreement with experiment. The case of materials with in-plane anisotropy is then discussed and it is argued that finite size effects may lead to observable magnetic order in macroscopic samples even if long range magnetic order is forbidden by the Mermin-Wagner theorem.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Towards Photoferroic Materials by Design: Recent Progresses and Perspective

The use of photoferroic materials that combine ferroelectric and light harvesting properties in a photovoltaic device is a promising route to significantly improve the efficiency of solar cells. These materials do not require the formation of a p-n junction and can produce photovoltages well above the value of the band gap, because of the spontaneous intrinsic polarization and the formation of domain walls. In this perspective, we discuss the recent experimental progresses and challenges for the synthesis of these materials and the theoretical discovery of novel photoferroic materials using a high-throughput approach.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Defect Tolerant Monolayer Transition Metal Dichalcogenides

Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are termed defect tolerant. Here we provide a systematic first principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy while the TMDs based on group IV metals form only shallow defect levels and are thus predicted to be defect tolerant. Interestingly, all the defect sensitive TMDs have valence and conduction bands with very similar orbital composition. This indicates a bonding/anti-bonding nature of the gap which in turn suggests that dangling bonds will fall inside the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to non-polar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within the band gap.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Excitons in van der Waals heterostructures: The important role of dielectric screening

The existence of strongly bound excitons is one of the hallmarks of the newly discovered atomically thin semi-conductors. While it is understood that the large binding energy is mainly due to the weak dielectric screening in two dimensions (2D), a systematic investigation of the role of screening on 2D excitons is still lacking. Here we provide a critical assessment of a widely used 2D hydrogenic exciton model which assumes a dielectric function of the form ε(q) = 1 + 2παq, and we develop a quasi-2D model with a much broader applicability. Within the quasi-2D picture, electrons and holes are described as in-plane point charges with a finite extension in the perpendicular direction and their interaction is screened by a dielectric function with a non-linear q-dependence which is computed ab-initio. The screened interaction is used in a generalized Mott-Wannier model to calculate exciton binding energies in both isolated and supported 2D materials. For isolated 2D materials, the quasi-2D treatment yields results almost identical to those of the strict 2D model and both are in good agreement with ab-initio many-body calculations. On the other hand, for more complex structures such as supported layers or layers embedded in a van der Waals heterostructure, the size of the exciton in reciprocal space extends well beyond the linear regime of the dielectric function and a quasi-2D description has to replace the 2D one. Our methodology has the merit of providing a seamless connection between the strict 2D limit of isolated monolayer materials and the more bulk-like screening characteristics of supported 2D materials or van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Simple Screened Hydrogen Model of Excitons in Two-Dimensional Materials

We present a generalized hydrogen model for the binding energies ($E_B$) of excitons in two-dimensional (2D) materials that sheds light on the fundamental differences between excitons in two and three dimensions. In contrast to the well-known hydrogen model of three-dimensional (3D) excitons, the description of 2D excitons is complicated by the fact that the screening cannot be assumed to be local. We show that one can consistently define an effective 2D dielectric constant by averaging the screening over the extend of the exciton. For an ideal 2D semiconductor this leads to a simple expression for $E_B$ that only depends on the excitonic mass and the 2D polarizability $α$. The model is shown to produce accurate results for 51 transition metal dichalcogenides. Remarkably, over a wide range of polarizabilities the expression becomes independent of the mass and we obtain $E_B^{2D}\approx3/(4πα)$, which explains the recently observed linear scaling of exciton binding energies with band gap. It is also shown that the model accurately reproduces the non-hydrogenic Rydberg series in WS$_2$ and can account for screening from the environment.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Valley Hall effect in disordered monolayer MoS2 from first principles

Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal symmetry is present, equal and opposite amounts of k-space Berry curvature accumulate in each of the two valleys. This is conveniently quantified by the integral of the Berry curvature over a single valley - the valley Hall conductivity. We generalize this definition to include contributions from disorder described with the supercell approach, by mapping ("unfolding") the Berry curvature from the folded Brillouin zone of the disordered supercell onto the normal Brillouin zone of the pristine crystal, and then averaging over several realizations of disorder. We use this scheme to study from first-principles the effect of sulfur vacancies on the valley Hall conductivity of monolayer MoS2. In dirty samples the intrinsic valley Hall conductivity receives gating-dependent corrections that are only weakly dependent on the impurity concentration, consistent with side-jump scattering and the unfolded Berry curvature can be interpreted as a k-space resolved side-jump. At low impurity concentrations skew scattering dominates, leading to a divergent valley Hall conductivity in the clean limit. The implications for the recently-observed photoinduced anomalous Hall effect are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Accurate Ground State Energies of Solids and Molecules from Time Dependent Density Functional Theory

We demonstrate that ground state energies approaching chemical accuracy can be obtained by combining the adiabatic connection fluctuation-dissipation theorem (ACFDT) with time-dependent density functional theory (TDDFT). The key ingredient is a renormalization scheme, which eliminates the divergence of the correlation hole characteristic of any local kernel. This new class of renormalized kernels gives a significantly better description of the short-range correlations in covalent bonds compared to the random phase approximation (RPA) and yields a four fold improvement of RPA binding energies in both molecules and solids. We also consider examples of barrier heights in chemical reactions, molecular adsorption and graphene interacting with metal surfaces, which are three examples where RPA has been successful. In these cases, the renormalized kernel provides results that are of equal quality or even slightly better than RPA, with a similar computational cost.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS$_2$

We present first-principles many-body calculations of the dielectric constant, quasiparticle band structure, and optical absorption spectrum of monolayer MoS$_2$ using a supercell approach. As the separation between the periodically repeated layers is increased, the dielectric function of the layer develops a strong $q$ dependence around $q=0$. This implies that denser $k$-point grids are required to converge the band gap and exciton binding energies when large supercells are used. In the limit of infinite layer separation, here obtained using a truncated Coulomb interaction, a $45\times45$ $k$-point grid is needed to converge the G$_0$W$_0$ band gap and exciton energy to within 0.1 eV. We provide an extensive comparison with previous studies and explain agreement and variations in the results. It is demonstrated that too coarse $k$-point sampling and the interactions between the repeated layers have opposite effects on the band gap and exciton energy, leading to a fortuitous error cancellation in the previously published results.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Static correlation beyond the random phase approximation: Dissociating H2 with the Bethe-Salpeter equation and time-dependent GW

We investigate various approximations to the correlation energy of a H$_2$ molecule in the dissociation limit, where the ground state is poorly described by a single Slater determinant. The correlation energies are derived from the density response function and it is shown that response functions derived from Hedin's equations (Random Phase Approximation (RPA), Time-dependent Hartree-Fock (TDHF), Bethe-Salpeter equation (BSE), and Time-Dependent GW (TDGW)) all reproduce the correct dissociation limit. We also show that the BSE improves the correlation energies obtained within RPA and TDHF significantly for intermediate binding distances. A Hubbard model for the dimer allow us to obtain exact analytical results for the various approximations, which is readily compared with the exact diagonalization of the model. Moreover, the model is shown to reproduce all the qualitative results from the \textit{ab initio} calculations and confirms that BSE greatly improves the RPA and TDHF results despite the fact that the BSE excitation spectrum breaks down in the dissociation limit. In contrast, Second Order Screened Exchange (SOSEX) gives a poor description of the dissociation limit, which can be attributed to the fact that it cannot be derived from an irreducible response function.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Beyond the random phase approximation: Improved description of short range correlation by a renormalized adiabatic local density approximation

We assess the performance of a recently proposed renormalized adiabatic local density approximation (rALDA) for \textit{ab initio} calculations of electronic correlation energies in solids and molecules. The method is an extension of the random phase approximation (RPA) derived from time-dependent density functional theory and the adiabatic connection fluctuation-dissipation theorem and contains no fitted parameters. The new kernel is shown to preserve the accurate description of dispersive interactions from RPA while significantly improving the description of short range correlation in molecules, insulators, and metals. For molecular atomization energies the rALDA is a factor of 7(4) better than RPA(PBE) when compared to experiments, and a factor of 3(1.5) better than RPA(PBE) for cohesive energies of solids. For transition metals the inclusion of full shell semi-core states is found to be crucial for both RPA and rALDA calculations and can improve the cohesive energies by up to 0.4 eV. Finally we discuss straightforward generalizations of the method, which might improve results even further.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quasiparticle GW calculations for solids, molecules and 2D materials

We present a plane wave implementation of the G0W0 approximation within the projector augmented wave method code GPAW. The computed band gaps of ten bulk semiconductors and insulators deviate on average by 0.2 eV (~ 5 %) from the experimental values - the only exception being ZnO where the calculated band gap is around 1 eV too low. Similar relative deviations are found for the ionization potentials of a test set of 32 small molecules. The importance of substrate screening for a correct description of quasiparticle energies and Fermi velocities in supported 2D materials is illustrated by the case of graphene/h-BN interfaces. Due to the long range Coulomb interaction between periodically repeated images, the use of a truncated interaction is found to be essential for obtaining converged results for 2D materials. For all systems studied, a plasmon pole approximation is found to reproduce the full frequency results to within 0.2 eV with a significant gain in computational speed. As alternative to G0W0, the efficient local GLLBSC potential yields significantly better results than the PBE0 hybrid. For completeness, we provide a mathematically rigorous and physically transparent introduction to the notion of quasiparticle states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The random phase approximation applied to solids, molecules, and graphene-metal interfaces: From weak to strong binding regimes

The random phase approximation (RPA) is attracting renewed interest as a universal and accurate method for first-principles total energy calculations. The RPA naturally accounts for long-range dispersive forces without compromising accuracy for short range interactions making the RPA superior to semi-local and hybrid functionals in systems dominated by weak van der Waals or mixed covalent-dispersive interactions. In this work we present plane wave-based RPA calculations for a broad collection of systems with bond types ranging from strong covalent to van der Waals. Our main result is the RPA potential energy surfaces of graphene on the Cu(111), Ni(111), Co(0001), Pd(111), Pt(111), Ag(111), Au(111), and Al(111) metal surfaces, which represent archetypical examples of metal-organic interfaces. Comparison with semi-local density approximations and a non-local van der Waals functional show that only the RPA captures both the weak covalent and dispersive forces which are equally important for these systems. We benchmark our implementation in the GPAW electronic structure code by calculating cohesive energies of graphite and a range of covalently bonded solids and molecules as well as the dissociation curves of H2 and H2+. These results show that RPA with orbitals from the local density approximation suffers from delocalization errors and systematically underestimates covalent bond energies yielding similar or lower accuracy than the Perdew-Burke-Ernzerhof (PBE) functional for molecules and solids, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Extending the random-phase approximation for electronic correlation energies: The renormalized adiabatic local density approximation

The adiabatic connection fluctuation-dissipation theorem with the random phase approximation (RPA) has recently been applied with success to obtain correlation energies of a variety of chemical and solid state systems. The main merit of this approach is the improved description of dispersive forces while chemical bond strengths and absolute correlation energies are systematically underestimated. In this work we extend the RPA by including a parameter-free renormalized version of the adiabatic local density (ALDA) exchange-correlation kernel. The renormalization consists of a (local) truncation of the ALDA kernel for wave vectors $q>2k_F$, which is found to yield excellent results for the homogeneous electron gas. In addition, the kernel significantly improves both the absolute correlation energies and atomization energies of small molecules over RPA and ALDA. The renormalization can be straightforwardly applied to other adiabatic local kernels.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Memory effects in non-adiabatic molecular dynamics at metal surfaces

We study the effect of temporal correlation in a Langevin equation describing non-adiabatic dynamics at metal surfaces. For a harmonic oscillator the Langevin equation preserves the quantum dynamics exactly and it is demonstrated that memory effects are needed in order to conserve the ground state energy of the oscillator. We then compare the result of Langevin dynamics in a harmonic potential with a perturbative master equation approach and show that the Langevin equation gives a better description in the non-perturbative range of high temperatures and large friction. Unlike the master equation, this approach is readily extended to anharmonic potentials. Using density functional theory we calculate representative Langevin trajectories for associative desorption of N$_2$ from Ru(0001) and find that memory effects lowers the dissipation of energy. Finally, we propose an ab-initio scheme to calculate the temporal correlation function and dynamical friction within density functional theory.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum corrected Langevin dynamics for adsorbates on metal surfaces interacting with hot electrons

We investigate the importance of including quantized initial conditions in Langevin dynamics for adsorbates interacting with a thermal reservoir of electrons. For quadratic potentials the time evolution is exactly described by a classical Langevin equation and it is shown how to rigorously obtain quantum mechanical probabilities from the classical phase space distributions resulting from the dynamics. At short time scales, classical and quasiclassical initial conditions lead to wrong results and only correctly quantized initial conditions give a close agreement with an inherently quantum mechanical master equation approach. With CO on Cu(100) as an example, we demonstrate the effect for a system with ab initio frictional tensor and potential energy surfaces and show that quantizing the initial conditions can have a large impact on both the desorption probability and the distribution of molecular vibrational states.

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preprint2010arXiv

Vibrationally Mediated Control of Single Electron Transmission in Weakly Coupled Molecule-Metal Junctions

We propose a mechanism which allows one to control the transmission of single electrons through a molecular junction. The principle utilizes the emergence of transmission sidebands when molecular vibrational modes are coupled to the electronic state mediating the transmission. We will show that if a molecule-metal junction is biased just below a molecular resonance one may induce the transmission of a single electron by externally exciting a vibrational mode of the molecule. The analysis is quite general but requires that the molecular orbital does not hybridize strongly with the metallic states. As an example we perform a density functional theory (DFT) analysis of a benzene molecule between two Au(111) contacts and show that exciting a particular vibrational mode can give rise to transmission of a single electron

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preprint2009arXiv

Inelastic scattering in a local polaron model with quadratic coupling to bosons

We calculate the inelastic scattering probabilities in the wide band limit of a local polaron model with quadratic coupling to bosons. The central object is a two-particle Green function which is calculated exactly using a purely algebraic approach. Compared with the usual linear interaction term a quadratic interaction term gives higher probabilities for inelastic scattering involving a large number of bosons. As an application we consider the problem hot electron mediated energy transfer at surfaces and use the delta self-consistent field extension of density functional theory to calculate and compare coupling parameters and probabilities for exciting different vibrational modes of CO adsorbed on a Cu(100) surface.

0 citations0 reviewsNo code linkedOpen access