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Researcher profile

Klaus Irmscher

Klaus Irmscher contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.comp-phphysics.optics

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Published work

5 published item(s)

preprint2022arXiv

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the nitrogen defect in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal ($h$) and cubic ($k$) coordinated nitrogen including coupling with its nuclear spin (I=1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements we can fully determine the polarization properties of the spin transitions and we obtain $g$ and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator lineshape functions. We propose frequency-scanning THz-EPR-GSE as a new and versatile method to study properties of spins in solid state materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV.

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preprint2021arXiv

Thermal conductivity of bulk In$_{2}$O$_{3}$ single crystals

The transparent semiconductor In$_{2}$O$_{3}$ is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conductivity. We present a study of thermal conductivity of In$_{2}$O$_{3}$ crystals and find that around 20 K, it peaks to a value as high as 5,000 WK$^{-1}$m$^{-1}$, comparable to the peak thermal conductivity in silicon and exceeded only by a handful of insulators. The amplitude of the peak drastically decreases in presence of a type of disorder, which does not simply correlate with the density of mobile electrons. Annealing enhances the ceiling of the phonon mean free path. Samples with the highest thermal conductivity are those annealed in the presence of hydrogen. Above 100 K, thermal conductivity becomes sample independent. In this intrinsic regime, dominated by phonon-phonon scattering, the magnitude of thermal diffusivity, $D$ becomes comparable to many other oxides, and its temperature dependence evolves towards $T^{-1}$. The ratio of $D$ to the square of sound velocity yields a scattering time which obeys the expected scaling with the Planckian time.

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preprint2020arXiv

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds $5*10^{17}$ $cm^{-3}$, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isotope effect on the defects' local vibrational modes (LVMs) originally found in samples containing carbon of natural isotopic composition $(~99 $%$ ^{12}C, ~1$%$ ^{13}C)$ at $1679$ $cm^{-1}$ and $1718$ $cm^{-1}$. Number, spectral positions, and intensities of the LVMs for samples enriched with the $^{13}C$ isotope (~99 % and ~50 %) are consistently interpreted on the basis of the harmonic oscillator model taking into account the probability of possible isotope combinations. Including the polarization dependence of the LVM absorption, we show that the tri-carbon defects form a triatomic molecule-like structure in two crystallographically different configurations: a basal configuration with the carbon bonds near the basal plane and an axial configuration with one of the carbon bonds along the c-axis. Finally, the disappearance of the LVMs under additional below-bandgap illumination is interpreted as defect recharging, i.e. the tri-carbon defects possess at least one charge state transition level within the bandgap and contribute to optical absorption as well as to the electrical charge balance.

0 citations0 reviewsNo code linkedOpen access