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Ju Li

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Published work

39 published item(s)

preprint2026arXiv

D-PACE: Dynamic Position-Aware Cross-Entropy for Parallel Speculative Drafting

Speculative decoding accelerates LLM inference by having a small drafter propose tokens that a larger target model verifies in parallel. Recent diffusion-based parallel drafters such as DFlash predict the full B-token block in one forward pass, enabling deeper drafters and longer accepted blocks. However, existing multi-token drafter objectives often use fixed position-dependent weighting schedules, such as head-dependent weights or block-position decays, which do not adapt as the positions limiting acceptance change during training. To address this, we derive per-position training weights from a differentiable surrogate of expected accepted draft length, matching the weight of each position to its log-probability gradient contribution. The resulting loss, D-PACE (Dynamic Position-Aware Cross-Entropy), shifts training signal toward positions that currently limit acceptance as the drafter improves. Across six benchmarks, two Qwen3-4B draft depths, two decoding temperatures, and two additional target models, D-PACE consistently improves both wall-clock speedup and average emitted length, with 2.3\% measured training-time overhead and no changes to the drafter architecture or inference procedure.

preprint2025arXiv

Spectral Sampling of Boron Diffusion in Ni Alloys: Cr and Mo Effects on Bulk and Grain Boundary Transport

Understanding how light interstitials migrate in chemically complex alloys is essential for predicting defect dynamics and long-term stability. Here, we introduce a spectral sampling framework to quantify boron diffusion activation energies in Ni and demonstrate how substitutional solutes (Cr, Mo) reshape interstitial point defect transport in both the bulk and along crystallographic defects. In the bulk, boron migration energy distributions exhibit distinct modality tied to solute identity and spatial arrangement: both Cr and Mo raise barriers in symmetric cages but induce directional asymmetry in partially decorated environments. Extending this framework to a $\Sigma5\langle100\rangle{210}$ symmetric tilt grain boundary reveals solute-specific confinement effects. Cr preserves low-barrier in-plane mobility while suppressing out-of-plane transport, guiding boron into favorable midplane voids. Mo, by contrast, imposes an across-the-board reduction in boron mobility, suppressing average diffusivity by two additional orders of magnitude at 800 $^\circ$C and reducing out-of-plane transport by five orders of magnitude relative to Cr. Both elements promote segregation by producing negative segregation energies, but their roles diverge: Cr facilitates rapid redistribution and stabilization at interfacial sites, consistent with Cr-rich boride formation, while Mo creates deeper and more uniform segregation wells that strongly anchor boron. Together, these complementary behaviors explain the experimental prevalence of Cr- and Mo-rich borides at grain boundaries and carbide interfaces in Ni-based superalloys. More broadly, we establish spectral sampling as a transferable framework for interpreting diffusion in disordered alloys and for designing dopant strategies that control transport across complex interfaces.

preprint2022arXiv

First-principles Calculation of the Temperature-dependent Transition Energies in Spin Defects

Spin qubits associated with color centers are promising platforms for various quantum technologies. However, to be deployed in robust quantum devices, the variations of their intrinsic properties with the external conditions, and in particular temperature, should be known with high precision. Unfortunately, a predictive theory on the temperature dependence of the resonance frequency of electron and nuclear spin defects in solids remains lacking. In this work, we develop a first-principles method for the temperature dependence of zero phonon line, zero-field splitting, hyperfine interaction, and nuclear quadrupole interaction of color centers. As a testbed, we compare our ab-initio calculation results with experiments in the Nitrogen-Vacancy (NV) center finding good agreement. Interestingly, we identify the major origin of temperature dependence as a second-order effect of phonon vibration. The method is generally applicable to different color centers and provides a theoretical tool for designing high-precision quantum sensors.

preprint2022arXiv

Generalized Wilson Loop Method for Nonlinear Light-Matter Interaction

Nonlinear light-matter interaction, as the core of ultrafast optics, bulk photovoltaics, nonlinear optical sensing and imaging, and efficient generation of entangled photons, has been traditionally studied by first-principles theoretical methods with the sum-over-states approach. However, this indirect method often suffers from the divergence at band degeneracy and optical zeros as well as convergence issues and high computation costs when summing over the states. Here, using shift vector and shift current conductivity tensor as an example, we present a gauge-invariant generalized approach for efficient and direct calculations of nonlinear optical responses by representing interband Berry curvature, quantum metric, and shift vector in a generalized Wilson loop. This generalized Wilson loop method avoids the above cumbersome challenges and allows for easy implementation and efficient calculations. More importantly, the Wilson loop representation provides a succinct geometric interpretation of nonlinear optical processes and responses based on quantum geometric tensors and quantum geometric potentials and can be readily applied to studying other excited-state responses.

preprint2022arXiv

Ion-Beam Radiation-Induced Eshelby Transformations: The Mean and Variance in Hydrostatic and Shear Residual Stresses

Ion beam plays a pivotal role in ion implantations and the fabrication of nanostructures. However, there lacks a quantitative model to describe the residual stresses associated with the ion-beam radiation. Radiation-induced residual stress/transformation strain have been mostly recognized in the hydrostatic sub strain space. Here, we use molecular dynamics (MD) simulations to show that the response of a material to irradiation is generally anisotropic that depends on the ion-beam direction, and should be described using tensorial quantities. We demonstrate that accelerator-based ion beam irradiation, combined with the intrinsic lattice anisotropy and externally induced anisotropy (such as anisotropic mechanical loadings), causes radiation-actuated shear transformation strains in addition to hydrostatic expansion. We map out these complex correlations for several materials. Radiation-induced defects are shown to be responsible for residual shear stresses in the manner of Eshelby inclusion transformation. We propose such tensorial response model should be considered for accurate nanoscale fabrication using ion-beam irradiation.

preprint2022arXiv

Nonlinear Nonreciprocal Photocurrents under Phonon Dressing

Nonlinear optical (NLO) effects have attracted great interest recently. However, by far the computational studies on NLO use the independent particle approximation and ignore many-body effects. Here we develop a generic Green's function framework to calculate the NLO response functions, which can incorporate various many-body interactions. We focus on the electron-phonon coupling and reveal that phonon dressing can make significant impacts on nonlinear photocurrent, such as the bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) currents. BPV/BSPV should be zero for centrosymmetric crystals, but when phonons are driven out-of-equilibrium, by for example, a temperature gradient $\nabla T$, the optical selections rules are altered and phonon-pumped BPV/BSPV currents can be non-zero in nominally centrosymmetric crystal. Moreover, we elucidate that such NLO responses under non-equilibrium phonon dressing can be nonreciprocal, as the direction of the current does not necessarily get reversed when the direction of the temperature gradient is reversed.

preprint2022arXiv

Revealing hidden defects through stored energy measurements of radiation damage

With full knowledge of a material's atomistic structure, it is possible to predict any macroscopic property of interest. In practice, this is hindered by limitations of the chosen characterisation techniques. For example, electron microscopy is unable to detect the smallest and most numerous defects in irradiated materials. Instead of spatial characterisation, we propose to detect and quantify defects through their excess energy. Differential scanning calorimetry (DSC) of irradiated Ti measures defect densities 5 times greater than those determined using transmission electron microscopy (TEM). Our experiments also reveal two energetically-distinct processes where the established annealing model predicts one. Molecular dynamics (MD) simulations discover the defects responsible and inform a new mechanism for the recovery of irradiation-induced defects. The combination of annealing experiments and simulations can reveal defects hidden to other characterisation techniques, and has the potential to uncover new mechanisms behind the evolution of defects in materials.

preprint2021arXiv

Abnormal Surface Nonlinear Optical Responses in Topological Materials

Nonlinear optical (NLO) responses of topological materials are under active research in recent years. Yet by far, most studies focused on the bulk properties, whereas the surface effects and the difference between surface and bulk responses have not been systematically studied. Here we develop a generic Green's function framework to investigate the surface NLO properties of topological materials. The Green's function framework can naturally incorporate many-body effects and can be easily extended to high-order NLO responses. Using Td-WTe2 as an example, we reveal that the surface can behave disparately from the bulk under light illumination. Remarkably, the shift and circular currents on the surface can flow in opposite directions to those in the bulk interior. Moreover, the light-induced spin current on the surface can be orders of magnitude stronger than its bulk counterpart. We also study the responses under inhomogeneous field and higher-order NLO effect, which are all distinct on the surface. These anomalous surface NLO responses suggest that light can be a valuable tool for probing the surface states of topological materials. On the other hand, the surface effects shall be prudently considered when investigating the optical properties of topological materials, especially if the material is of nanoscale and/or the light penetration depth is small.

preprint2021arXiv

Colossal switchable photocurrents in topological Janus transition metal dichalcogenides

Nonlinear optical properties, such as bulk photovoltaic effects, possess great potential in energy harvesting, photodetection, rectification, etc. To enable efficient light-current conversion, materials with strong photo-responsivity are highly desirable. In this work, we predict that monolayer Janus transition metal dichalcogenides (JTMDs) in the 1T' phase possess colossal nonlinear photoconductivity owing to their topological band mixing, strong inversion symmetry breaking, and small electronic bandgap. 1T' JTMDs have inverted bandgaps on the order of 10 meV and are exceptionally responsive to light in the terahertz (THz) range. By first-principles calculations, we reveal that 1T' JTMDs possess shift current (SC) conductivity as large as $2300 ~\rm nm \cdot μA / V^2$, equivalent to a photo-responsivity of $2800 ~\rm mA/W$. The circular current (CC) conductivity of 1T' JTMDs is as large as $10^4~ \rm nm \cdot μA / V^2$. These remarkable photo-responsivities indicate that the 1T' JTMDs can serve as efficient photodetectors in the THz range. We also find that external stimuli such as the in-plane strain and out-of-plane electric field can induce topological phase transitions in 1T' JTMDs and that the SC can abruptly flip their directions. The abrupt change of the nonlinear photocurrent can be used to characterize the topological transition and has potential applications in 2D optomechanics and nonlinear optoelectronics.

preprint2021arXiv

On-lattice voxelated convolutional neural networks for prediction of phase diagrams and diffusion barriers in cubic alloys

Cluster expansion approximates an on-lattice potential with polynomial regression. We show that using a convolutional neural network (CNN) instead leads to more accurate prediction due to the depth of the network. We construct our CNN potential directly on cubic lattice sites, representing voxels in a 3D image, and refer to our method as the voxelated CNN (VCNN). The convolutional layers automatically integrate interaction terms in the regressor; thus, no explicit definition of clusters is required. As a model system, we combine our VCNN potential with Monte Carlo simulations on a Ni$_{1-x}$Al$_x$ ($x$ < 30%) and predict a disordered-to-ordered phase transition with less than 1 meV/atom error. We also predict the energetic landscape of vacancy diffusion. Classification of formation energy with respect to short-range-ordering of Al alloys around a vacancy reveals that the ordering decreases the probability of Ni diffusion. As the width of our input layer does not depend on the atomic composition, VCNNs can be applied to study alloys with arbitrary numbers of elements and empty lattice sites, without additional computational costs.

preprint2021arXiv

TeaNet: universal neural network interatomic potential inspired by iterative electronic relaxations

A universal interatomic potential for an arbitrary set of chemical elements is urgently needed in computational materials science. Graph convolution neural network (GCN) has rich expressive power, but previously was mainly employed to transport scalars and vectors, not rank $\ge 2$ tensors. As classic interatomic potentials were inspired by tight-binding electronic relaxation framework, we want to represent this iterative propagation of rank $\ge 2$ tensor information by GCN. Here we propose an architecture called the tensor embedded atom network (TeaNet) where angular interaction is translated into graph convolution through the incorporation of Euclidean tensors, vectors and scalars. By applying the residual network (ResNet) architecture and training with recurrent GCN weights initialization, a much deeper (16 layers) GCN was constructed, whose flow is similar to an iterative electronic relaxation. Our traning dataset is generated by density functional theory calculation of mostly chemically and structurally randomized configurations. We demonstrate that arbitrary structures and reactions involving the first 18 elements on the periodic table (H to Ar) can be realized satisfactorily by TeaNet, including C-H molecular structures, metals, amorphous SiO${}_2$, and water, showing surprisingly good performance (energy mean absolute error 19 meV/atom) and robustness for arbitrary chemistries involving elements from H to Ar.

preprint2020arXiv

A Translational Three-Degrees-of-Freedom Parallel Mechanism With Partial Motion Decoupling and Analytic Direct Kinematics

According to the topological design theory and method of parallel mechanism (PM) based on position and orientation characteristic (POC) equations, this paper studied a 3-DOF translational PM that has three advantages, i.e., (i) it consists of three fixed actuated prismatic joints, (ii) the PM has analytic solutions to the direct and inverse kinematic problems, and (iii) the PM is of partial motion decoupling property. Firstly, the main topological characteristics, such as the POC, degree of freedom and coupling degree were calculated for kinematic modeling. Thanks to these properties, the direct and inverse kinematic problems can be readily solved. Further, the conditions of the singular configurations of the PM were analyzed which corresponds to its partial motion decoupling property.

preprint2020arXiv

Deep-learning-based optical image hiding

A novel framework of optical image hiding based on deep learning (DL) is proposed in this paper, and hidden information can be reconstructed from an interferogram by using an end to end network with high-quality. By using the prior data between the hidden image and the object image, a generative adversarial network was trained so that it can learn the hiding model, which resulting in only an interferogram needs to be transmitted and recorded to reconstruct image. Moreover, reconstruction process can be obtained without the parameters in optical inverse diffraction and the reconstruction result will not be affected by the phase shifts deviation and noise, which is convenient for practical application. The feasibility and security of the proposed method are demonstrated by the optical experiment results.

preprint2020arXiv

Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution

Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these materials have led to fabrication of heterostructures, superlattices, and twisted structures with breakthrough discoveries and applications. Here, we report a novel atomic-scale material design tool that selectively breaks and forms chemical bonds of 2D materials at room temperature, called atomic-layer substitution (ALS), through which we can substitute the top layer chalcogen atoms within the 3-atom-thick transition-metal dichalcogenides using arbitrary patterns. Flipping the layer via transfer allows us to perform the same procedure on the other side, yielding programmable in-plane multi-heterostructures with different out-of-plane crystal symmetry and electric polarization. First-principle calculations elucidate how the ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. Optical characterizations confirm the fidelity of this design approach, while TEM shows the direct evidence of Janus structure and suggests the atomic transition at the interface of designed heterostructure. Finally, transport and Kelvin probe measurements on MoXY (X,Y=S,Se; X and Y corresponding to the bottom and top layers) lateral multi-heterostructures reveal the surface potential and dipole orientation of each region, and the barrier height between them. Our approach for designing artificial 2D landscape down to a single layer of atoms can lead to unique electronic, photonic and mechanical properties previously not found in nature.

preprint2020arXiv

Giant Photonic Response of Mexican-hat Topological Semiconductors for Mid-infrared to THz Applications

The mid-infrared (MIR), far-infrared (FIR) to terahertz (THz) frequencies are the least developed parts of the electromagnetic spectrum for applications. Traditional semiconductor technologies like laser diodes and photodetectors are successful in the visible light range, but are still confronted with great challenges when extended into the MIR/FIR/THz range. In this paper, we demonstrate that topological insulators (TIs), especially those with Mexican-hat band structure (MHBS), provide a route to overcome these challenges. The optical responses of MHBS TIs can be one to two orders of magnitude larger than that of normal semiconductors at the optical-transition edge. We explore the databases of topological materials and discover a number of MHBS TIs whose bandgaps lie between $0.05\sim 0.5~\rm eV$ and possess giant gains (absorption coefficients) on the order of $10^4 \sim 10^5~\rm cm^{-1}$ at the transition edge. These findings may significantly boost potential MIR/FIR/THz applications such as photon sources, detectors, ultrafast electro-optical devices, and quantum information technologies.

preprint2019arXiv

Role of higher-order phonon scattering in the zone-center optical phonon linewidth and the Lorenz oscillator model

Zone-center optical phonon linewidth is a key parameter for infrared and Raman spectra as well as the Lorenz oscillator model. While three-phonon scattering was often assumed to be the leading contribution, in this work we find, surprisingly, that higher-order phonon scattering universally plays a significant or even dominant role over three-phonon scattering at room temperature, and more so at elevated temperatures, for a wide range of materials including diamond, Si, Ge, boron arsenide (BAs), cubic silicon carbide (3C-SiC), and $α$-quartz. This is enabled by the large fourphonon scattering phase space of zone-center optical phonons, and distinct from heat conduction where at room temperature four-phonon scattering is still secondary to three-phonon scattering. Moreover, our results imply that five-phonon and even higher-order scattering may be significant for some large band-gap materials, e.g., BAs. Our predicted infrared optical properties through the Lorenz oscillator model, after including four-phonon scattering, show much better agreement with experimental measurements than those three-phonon based predictions. This work will raise broad interest of studying high-order scattering in various areas beyond heat conduction.

preprint2016arXiv

Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect

Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, we predict electronic properties of M3C12S12 and M3C12O12, where M is Zn, Cd, Hg, Be, or Mg with no M orbital contributions to bands near Fermi level. For M3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n and p type, respectively, which are switchable by few-percent strain. The crossing of two cones are symmetry-protected to be non-hybridizing, leading to two independent channels in 2D node-line semimetals at the same k-point akin to spin-channels in spintronics, rendering conetronics device possible. The node line rings right at their crossing, which are both electron and hole pockets at the Fermi level, can give rise to magnetoresistance that will not saturate when the magnetic field is infinitely large, due to perfect n-p compensation. For M3C12O12, together with conjugated metal-tricatecholate polymers M3(HHTP)2, the spin-polarized slow Dirac cone center is pinned precisely at the Fermi level, making the systems conducting in only one spin or cone channel. Quantum anomalous Hall effect can arise in MOFs with non-negligible spin-orbit coupling like Cu3C12O12. Compounds of M3C12S12 and M3C12O12 with different M, can be used to build spintronic and cone-selecting heterostructure devices, tunable by strain or electrostatic gating.

preprint2016arXiv

Diffusive versus displacive contact plasticity of nanoscale asperities: Temperature- and velocity-dependent strongest size

We predict a strongest size for the contact strength when asperity radii of curvature decrease below ten nanometers. The reason for such strongest size is found to be correlated with the competition between the dislocation plasticity and surface diffusional plasticity. The essential role of temperature is calculated and illustrated in a comprehensive asperity size-strengthtemperature map taking into account the effect of contact velocity. Such a map should be essential for various phenomena related to nanoscale contacts such as nanowire cold welding, self-assembly of nanoparticles and adhesive nano-pillar arrays, as well as the electrical, thermal and mechanical properties of macroscopic interfaces.

preprint2016arXiv

Topological Semimetal-Insulator Quantum Phase Transition in Zintl Compounds Ba2X (X=Si, Ge)

By first-principles calculations, we find that Ba2X(X=Si, Ge) hosts a topological semimetal phase with one nodal ring in the kx=0 plane, which is protected by the glide mirror symmetry when spin-orbit coupling (SOC) is ignored. The corresponding drumheadlike surface flat band appears on the (100) surface in surface Green function calculation. Furthermore, a topological-semimetal-to-insulator transition (TSMIT) is found. The nodal line semimetal would evolve into topological insulator as SOC is turned on. The topologically protected metallic surface states emerge around the Gamma=0 point, which could be tuned into topologically-trivial insulator state by more than 3% hydrostatic strain. These results reveal a new category of materials showing quantum phase transition between topological semimetal and insulator, and tunability through elastic strain engineering.

preprint2016arXiv

Triple Point Topological Metals

Topologically protected fermionic quasiparticles appear in metals, where band degeneracies occur at the Fermi level, dictated by the band structure topology. While in some metals these quasiparticles are direct analogues of elementary fermionic particles of the relativistic quantum field theory, other metals can have symmetries that give rise to quasiparticles, fundamentally different from those known in high-energy physics. Here we report on a new type of topological quasiparticles -- triple point fermions -- realized in metals with symmorphic crystal structure, which host crossings of three bands in the vicinity of the Fermi level protected by point group symmetries. We find two topologically different types of triple point fermions, both distinct from any other topological quasiparticles reported to date. We provide examples of existing materials that host triple point fermions of both types, and discuss a variety of physical phenomena associated with these quasiparticles, such as the occurrence of topological surface Fermi arcs, transport anomalies and topological Lifshitz transitions.

preprint2015arXiv

Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy

We investigate the ultralow-frequency Raman response of atomically thin ReS2, a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and few-layer ReS2 exhibit rich Raman spectra at frequencies below 50 cm-1, where a panoply of interlayer shear and breathing modes are observed. The emergence of these interlayer phonon modes indicate that the ReS2 layers are coupled and stacked orderly, in contrast to the general belief that the ReS2 layers are decoupled from one another. While the interlayer breathing modes can be described by a linear chain model as in other 2D layered crystals, the shear modes exhibit distinctive behavior due to the in-plane lattice distortion. In particular, the two shear modes in bilayer ReS2 are non-degenerate and well separated in the Raman spectrum, in contrast to the doubly degenerate shear modes in other 2D materials. By carrying out comprehensive first-principles calculations, we can account for the frequency and Raman intensity of the interlayer modes, and determine the stacking order in bilayer ReS2.

preprint2015arXiv

Deformation-Driven Diffusion and Plastic Flow in Two-Dimensional Amorphous Granular Pillars

We report a combined experimental and simulation study of deformation-induced diffusion in compacted two-dimensional amorphous granular pillars, in which thermal fluctuations play negligible role. The pillars, consisting of bidisperse cylindrical acetal plastic particles standing upright on a substrate, are deformed uniaxially and quasistatically by a rigid bar moving at a constant speed. The plastic flow and particle rearrangements in the pillars are characterized by computing the best-fit affine transformation strain and non-affine displacement associated with each particle between two stages of deformation. The non-affine displacement exhibits exponential crossover from ballistic to diffusive behavior with respect to the cumulative deviatoric strain, indicating that in athermal granular packings, the cumulative deviatoric strain plays the role of time in thermal systems and drives effective particle diffusion. We further study the size-dependent deformation of the granular pillars by simulation, and find that different-sized pillars follow self-similar shape evolution during deformation. In addition, the yield stress of the pillars increases linearly with pillar size. Formation of transient shear lines in the pillars during deformation becomes more evident as pillar size increases. The width of these elementary shear bands is about twice the diameter of a particle, and does not vary with pillar size.

preprint2015arXiv

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

preprint2015arXiv

Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" C2v symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

preprint2015arXiv

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

preprint2015arXiv

Parallel Stitching of Two-Dimensional Materials

Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.

preprint2015arXiv

Piezoelectricity in Two-Dimensional Group III Monochalcogenides

We find that several layer-phase group-III monochalcogenides, including GaS, GaSe and InSe, are piezoelectric in the monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe and InSe are on the same order of magnitude as the earlier discovered two-dimensional piezoelectric materials, such as BN and MoS2 monolayers. Our study expands the family of two dimensional piezoelectric materials, suggesting that strong piezoelectric response can occur in a wide range of two dimensional materials with broken inversion symmetry. The co-existence of piezoelectricity and superior photo-sensitivity in these two-dimensional semiconductors enables the integration of electromechanical and optical sensors on the same material platform.

preprint2015arXiv

Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb$_{2-x}$V$_x$Te$_3$ hybrid heterostructure, where V doping is used to drive the TI (Sb$_{2}$Te$_3$) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping provides insights into controllable engineering of magnetic order using a hybrid heterostructure.

preprint2015arXiv

Silicene Spintronics

Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate numerous researchers into the studies of spintronics in graphene and other two-dimensional (2D) materials. Silicene, silicon analog of graphene, is considered as a promising material for spintronics. Here, we present a review on the theoretical advances about the spin-dependent properties including the electric field and exchange field tunable topological properties of silicene and the corresponding spintronic device simulations.

preprint2014arXiv

Envelope function method for electrons in slowly-varying inhomogeneously deformed crystals

We develop a new envelope-function formalism to describe electrons in slowly-varying inhomogeneously strained semiconductor crystals. A coordinate transformation is used to map a deformed crystal back to geometrically undeformed structure with deformed crystal potential. The single-particle Schrödinger equation is solved in the undeformed coordinates using envelope function expansion, wherein electronic wavefunctions are written in terms of strain-parametrized Bloch functions modulated by slowly varying envelope functions. Adopting local approximation of electronic structure, the unknown crystal potential in Schrödinger equation can be replaced by the strain-parametrized Bloch functions and the associated strain-parametrized energy eigenvalues, which can be constructed from unit-cell level ab initio or semi-empirical calculations of homogeneously deformed crystals at a chosen crystal momentum. The Schrödinger equation is then transformed into a coupled differential equation for the envelope functions and solved as a generalized matrix eigenvector problem. As the envelope functions are slowly varying, coarse spatial or Fourier grid can be used to represent the envelope functions, enabling the method to treat relatively large systems. We demonstrate the effectiveness of this method using a one-dimensional model, where we show that the method can achieve high accuracy in the calculation of energy eigenstates with relatively low cost compared to direct diagonalization of Hamiltonian. We further derive envelope function equations that allow the method to be used empirically, in which case certain parameters in the envelope function equations will be fitted to experimental data.

preprint2014arXiv

Experimental Verification of Van Vleck Nature of Long-Range Ferromagnetic Order in Vanadium-Doped Three-Dimensional Topological Insulator Sb$_{2}$Te$_{3}$

We demonstrate by high resolution low temperature electron energy loss spectroscopy (EELS) measurements that the long range ferromagnetic (FM) order in vanadium (V)-doped topological insulator Sb$_2$Te$_3$ has the nature of van Vleck-type ferromagnetism. The positions and the relative amplitudes of two core-level peaks (L$_3$ and L$_2$) of the V EELS spectrum show unambiguous change when the sample is cooled from room temperature to T=10K. Magnetotransport and comparison of the measured and simulated EELS spectra confirm that these changes originate from onset of FM order. Crystal field analysis indicates that in V-doped Sb$_2$Te$_3$, partially filled core states contribute to the FM order. Since van Vleck magnetism is a result of summing over all states, this magnetization of core level verifies the van Vleck-type ferromagnetism in a direct manner.

preprint2014arXiv

Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric field. We propose a novel topological field effect transistor made of these atomic layer materials and their van der Waals heterostructures. Our device exhibits parametrically enhanced charge-spin conductance through topologically protected transport channels, and can be rapidly switched off by electric field through topological phase transition instead of carrier depletion. Our work provides a practical material platform and device architecture for topological quantum electronics.

preprint2014arXiv

Time evolution of parametric instability in large-scale gravitational-wave interferometers

We present a study of three-mode parametric instability in large-scale gravitational-wave detectors. Previous work used a linearised model to study the onset of instability. This paper presents a non-linear study of this phenomenon, which shows that the initial stage of exponential rise of the amplitudes of a higher order optical mode and the mechanical internal mode of the mirror is followed by a saturation phase, in which all three participating modes reach a new equilibrium state with constant oscillation amplitudes. Results suggest that stable operation of interferometers may be possible in the presence of such instabilities, thereby simplifying the task of suppression.

preprint2014arXiv

Topological Crystalline Insulator Nanomembrane with Strain-Tunable Band Gap

The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of a free-standing nanomembrane of topological crystalline insulator (TCI) SnTe and Pb$_{1-x}$Sn$_x$(Se,Te) are highly tunable by engineering elastic strain and controlling membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We propose a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembrane with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open up new avenues for fabricating piezoresistive devices, thermoelectrics, infrared detectors and energy-efficient electronic and optoelectronic devices based on TCI nanomembrane.

preprint2013arXiv

Mechanical Controlled Thermal Switch and Hysteresis with Domain Boundary Engineered Phonon Transport

Heat flow control in phononics has received significant attention recently due to its widespread applications in energy transfer, conversion and utilization. Here, we demonstrate that by applying external stress or strain we can effectively tune the thermal conductivity through changing the density of twin boundaries, which in turn offers the intriguing mechanical-controlled thermal switch and hysteresis operations. Twin boundaries perpendicular to the transport direction strongly scatter phonons. As such, the heat flow is in inverse proportional to the density of twin boundaries and hence allows an excellent way to switch thermal conductivity mechanically and even leads to the interesting hysteresis behavior as a thermal memory. Our study provides a novel mechanism to couple thermal and mechanical properties of materials as a matter of "domain boundary engineering" and can have substantial implications in flexible thermal control and thermal energy harvesting.

preprint2013arXiv

Tailoring exciton dynamics by elastic strain-gradient in semiconductors

As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconductors. Here, we take a combined experimental and theoretical approach to demonstrate that elastic strain-gradient can be created controllably and reversibly in ZnO micro/nanowires. In particular, we show that the inhomogeneous strain distribution creates an effective field that fundamentally alters the dynamics of the neutral excitons. As the basic principles behind these results are quite generic and applicable to most semiconductors, this work points to a novel route to a wide range of applications in electronics, optoelectronics, and photochemistry.

preprint2011arXiv

A Novel EM Gradiometric Surveying System for Geophysical Reconnaissance

Interferometric principles are widely used in precision physics experiments and/or in advanced laboratory-based phase measurement systems. Phase resolution of such systems is a few orders of magnitude higher compared to that of standard mixer-based quadrature demodulators or lock-in technique. The first attempt of applying interferometric signal processing to transmitter-target-receiver based electromagnetic (EM) surveying in geophysical prospecting is described. It is shown that it is possible to build an EM single carrier surveying system that is, firstly, immune to amplitude variations of both the primary and the secondary EM fields, and, secondly, can directly measure phase variations between the primary and secondary EM fields. Its inherent phase noise floor, if limited by the interferometer itself, can be as low as tens of nanoradians/\surdHz or below -140 dBc/\surdHz level. A practical example of an EM gradiometric surveying system based on an interferometric principle and operating in the Extremely Low Frequency (ELF) range, is presented. The system has been tested in regional outback Australia, in the presence of a highly conducting overburden, in the search of a nickel sulphide deposit. Key words: EM gradiometer, interferometric methods, geophysical prospecting

preprint2010arXiv

Thermodynamic stability of oxygen point defects in cubic Zirconia

Zirconia (ZrO2) is an important material with technological applications which are affected by point defect physics. Ab-initio calculations are performed to understand the structural and electronic properties of oxygen vacancies and interstitials in different charge states in cubic zirconia. We find oxygen interstitials in cubic ZrO2 can have five different configurations - <110> dumbbell, <100> dumbbell, <100> crowd-ion, octahedral, and <111> distorted dumbbell. For a neutral and singly charged oxygen interstitial, the lowest energy configuration is the <110> dumbbell, while for a doubly charged oxygen interstitial the octahedral site is energetically the most favorable. Both the oxygen interstitial and the oxygen vacancy are negative-U, so that the singly charged defects are unstable at any Fermi level. The thermodynamic stability of these defects are studied in terms of Fermi level, oxygen partial pressure and temperature. A method to determine the chemical potential of the system as a function of temperature and pressure is proposed.

preprint2009arXiv

Quantum ground-state cooling and tripartite entanglement with three-mode optoacoustic interactions

We present a quantum analysis of three-mode optoacoustic parametric interactions in an optical cavity, in which two orthogonal transverse optical-cavity modes are coupled to one acoustic mode through radiation pressure. Due to the optimal frequency matching -- the frequency separation of two cavity modes is equal to the acoustic-mode frequency -- the carrier and sideband fields simultaneously resonate and coherently build up. This mechanism significantly enhances the optoacoustic couplings in the quantum regime. It allows exploration of quantum behavior of optoacoustic interactions in small-scale table-top experiments. We show explicitly that given an experimentally achievable parameter, three-mode scheme can realize quantum ground-state cooling of milligram scale mechanical oscillators and create robust stationary tripartite optoacoustic quantum entanglements.