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Haowei Xu

Haowei Xu contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Generalized Wilson Loop Method for Nonlinear Light-Matter Interaction

Nonlinear light-matter interaction, as the core of ultrafast optics, bulk photovoltaics, nonlinear optical sensing and imaging, and efficient generation of entangled photons, has been traditionally studied by first-principles theoretical methods with the sum-over-states approach. However, this indirect method often suffers from the divergence at band degeneracy and optical zeros as well as convergence issues and high computation costs when summing over the states. Here, using shift vector and shift current conductivity tensor as an example, we present a gauge-invariant generalized approach for efficient and direct calculations of nonlinear optical responses by representing interband Berry curvature, quantum metric, and shift vector in a generalized Wilson loop. This generalized Wilson loop method avoids the above cumbersome challenges and allows for easy implementation and efficient calculations. More importantly, the Wilson loop representation provides a succinct geometric interpretation of nonlinear optical processes and responses based on quantum geometric tensors and quantum geometric potentials and can be readily applied to studying other excited-state responses.

preprint2022arXiv

Nonlinear Nonreciprocal Photocurrents under Phonon Dressing

Nonlinear optical (NLO) effects have attracted great interest recently. However, by far the computational studies on NLO use the independent particle approximation and ignore many-body effects. Here we develop a generic Green's function framework to calculate the NLO response functions, which can incorporate various many-body interactions. We focus on the electron-phonon coupling and reveal that phonon dressing can make significant impacts on nonlinear photocurrent, such as the bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) currents. BPV/BSPV should be zero for centrosymmetric crystals, but when phonons are driven out-of-equilibrium, by for example, a temperature gradient $\nabla T$, the optical selections rules are altered and phonon-pumped BPV/BSPV currents can be non-zero in nominally centrosymmetric crystal. Moreover, we elucidate that such NLO responses under non-equilibrium phonon dressing can be nonreciprocal, as the direction of the current does not necessarily get reversed when the direction of the temperature gradient is reversed.

preprint2021arXiv

Abnormal Surface Nonlinear Optical Responses in Topological Materials

Nonlinear optical (NLO) responses of topological materials are under active research in recent years. Yet by far, most studies focused on the bulk properties, whereas the surface effects and the difference between surface and bulk responses have not been systematically studied. Here we develop a generic Green's function framework to investigate the surface NLO properties of topological materials. The Green's function framework can naturally incorporate many-body effects and can be easily extended to high-order NLO responses. Using Td-WTe2 as an example, we reveal that the surface can behave disparately from the bulk under light illumination. Remarkably, the shift and circular currents on the surface can flow in opposite directions to those in the bulk interior. Moreover, the light-induced spin current on the surface can be orders of magnitude stronger than its bulk counterpart. We also study the responses under inhomogeneous field and higher-order NLO effect, which are all distinct on the surface. These anomalous surface NLO responses suggest that light can be a valuable tool for probing the surface states of topological materials. On the other hand, the surface effects shall be prudently considered when investigating the optical properties of topological materials, especially if the material is of nanoscale and/or the light penetration depth is small.

preprint2021arXiv

Colossal switchable photocurrents in topological Janus transition metal dichalcogenides

Nonlinear optical properties, such as bulk photovoltaic effects, possess great potential in energy harvesting, photodetection, rectification, etc. To enable efficient light-current conversion, materials with strong photo-responsivity are highly desirable. In this work, we predict that monolayer Janus transition metal dichalcogenides (JTMDs) in the 1T' phase possess colossal nonlinear photoconductivity owing to their topological band mixing, strong inversion symmetry breaking, and small electronic bandgap. 1T' JTMDs have inverted bandgaps on the order of 10 meV and are exceptionally responsive to light in the terahertz (THz) range. By first-principles calculations, we reveal that 1T' JTMDs possess shift current (SC) conductivity as large as $2300 ~\rm nm \cdot μA / V^2$, equivalent to a photo-responsivity of $2800 ~\rm mA/W$. The circular current (CC) conductivity of 1T' JTMDs is as large as $10^4~ \rm nm \cdot μA / V^2$. These remarkable photo-responsivities indicate that the 1T' JTMDs can serve as efficient photodetectors in the THz range. We also find that external stimuli such as the in-plane strain and out-of-plane electric field can induce topological phase transitions in 1T' JTMDs and that the SC can abruptly flip their directions. The abrupt change of the nonlinear photocurrent can be used to characterize the topological transition and has potential applications in 2D optomechanics and nonlinear optoelectronics.

preprint2020arXiv

Giant Photonic Response of Mexican-hat Topological Semiconductors for Mid-infrared to THz Applications

The mid-infrared (MIR), far-infrared (FIR) to terahertz (THz) frequencies are the least developed parts of the electromagnetic spectrum for applications. Traditional semiconductor technologies like laser diodes and photodetectors are successful in the visible light range, but are still confronted with great challenges when extended into the MIR/FIR/THz range. In this paper, we demonstrate that topological insulators (TIs), especially those with Mexican-hat band structure (MHBS), provide a route to overcome these challenges. The optical responses of MHBS TIs can be one to two orders of magnitude larger than that of normal semiconductors at the optical-transition edge. We explore the databases of topological materials and discover a number of MHBS TIs whose bandgaps lie between $0.05\sim 0.5~\rm eV$ and possess giant gains (absorption coefficients) on the order of $10^4 \sim 10^5~\rm cm^{-1}$ at the transition edge. These findings may significantly boost potential MIR/FIR/THz applications such as photon sources, detectors, ultrafast electro-optical devices, and quantum information technologies.