Source author record

Xiaofeng Qian

Xiaofeng Qian appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

18works
8topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

18 published item(s)

preprint2026arXiv

Tensor Decomposition Networks for Fast Machine Learning Interatomic Potential Computations

$\rm{SO}(3)$-equivariant networks are the dominant models for machine learning interatomic potentials (MLIPs). The key operation of such networks is the Clebsch-Gordan (CG) tensor product, which is computationally expensive. To accelerate the computation, we develop tensor decomposition networks (TDNs) as a class of approximately equivariant networks in which CG tensor products are replaced by low-rank tensor decompositions, such as the CANDECOMP/PARAFAC (CP) decomposition. With the CP decomposition, we prove (i) a uniform bound on the induced error of $\rm{SO}(3)$-equivariance, and (ii) the universality of approximating any equivariant bilinear map. To further reduce the number of parameters, we propose path-weight sharing that ties all multiplicity-space weights across the $\mathcal{O}(L^3)$ CG paths into a single shared parameter set without compromising equivariance, where $L$ is the maximum angular degree. The resulting layer acts as a plug-and-play replacement for tensor products in existing networks, and the computational complexity of tensor products is reduced from $\mathcal{O}(L^6)$ to $\mathcal{O}(L^4)$. We evaluate TDNs on PubChemQCR, a newly curated molecular relaxation dataset containing 105 million DFT-calculated snapshots. We also use existing datasets, including OC20, and OC22. Results show that TDNs achieve competitive performance with dramatic speedup in computations. Our code is publicly available as part of the AIRS library (\href{https://github.com/divelab/AIRS/tree/main/OpenMol/TDN}{https://github.com/divelab/AIRS/}).

preprint2022arXiv

Generalized Wilson Loop Method for Nonlinear Light-Matter Interaction

Nonlinear light-matter interaction, as the core of ultrafast optics, bulk photovoltaics, nonlinear optical sensing and imaging, and efficient generation of entangled photons, has been traditionally studied by first-principles theoretical methods with the sum-over-states approach. However, this indirect method often suffers from the divergence at band degeneracy and optical zeros as well as convergence issues and high computation costs when summing over the states. Here, using shift vector and shift current conductivity tensor as an example, we present a gauge-invariant generalized approach for efficient and direct calculations of nonlinear optical responses by representing interband Berry curvature, quantum metric, and shift vector in a generalized Wilson loop. This generalized Wilson loop method avoids the above cumbersome challenges and allows for easy implementation and efficient calculations. More importantly, the Wilson loop representation provides a succinct geometric interpretation of nonlinear optical processes and responses based on quantum geometric tensors and quantum geometric potentials and can be readily applied to studying other excited-state responses.

preprint2021arXiv

Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6

We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 16f sites of the Im-3m space group, thus creating a colored version of the Ir3Ge7 structure. Like the other compounds of the Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displaying a relatively large power factor, PF ~ 2 mW/cmK2, at a temperature T ~ 225 K albeit showing a modest figure of merit, ZT = 8 x 10-4, due to the lack of a finite band gap. These figures might improve through a use of chemical substitution strategies to achieve band gap opening. Remarkably, electronic band structure calculations reveal that this compound displays a complex Dirac-like electronic structure relatively close to the Fermi level. The electronic structure is composed of several Dirac type-I and type-II nodes, and even Dirac type-III nodes that result from the touching between a flat band and a linearly dispersing band. This rich Dirac-like electronic dispersion offers the possibility to observe Dirac type-III nodes and study their role in the physical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.

preprint2020arXiv

Berry curvature memory through electrically driven stacking transitions

In two-dimensional layered quantum materials, the stacking order of the layers determines both the crystalline symmetry and electronic properties such as the Berry curvature, topology and electron correlation. Electrical stimuli can influence quasiparticle interactions and the free-energy landscape, making it possible to dynamically modify the stacking order and reveal hidden structures that host different quantum properties. Here we demonstrate electrically driven stacking transitions that can be applied to design nonvolatile memory based on Berry curvature in few-layer WTe$_2$. The interplay of out-of-plane electric fields and electrostatic doping controls in-plane interlayer sliding and creates multiple polar and centrosymmetric stacking orders. In situ nonlinear Hall transport reveals such stacking rearrangements result in a layer-parity-selective Berry curvature memory in momentum space, where the sign reversal of the Berry curvature and its dipole only occurs in odd-layer crystals. Our findings open an avenue towards exploring coupling between topology, electron correlations, and ferroelectricity in hidden stacking orders and demonstrate a new low-energy-cost, electrically controlled topological memory in the atomically thin limit.

preprint2020arXiv

Electrically-Tunable High Curie Temperature Two-Dimensional Ferromagnetism in Van der Waals Layered Crystals

Identifying intrinsic low-dimensional ferromagnets with high transition temperature and electrically tunable magnetism is crucial for the development of miniaturized spintronics and magnetoelectrics. Recently long-range 2D ferromagnetism was observed in van der Waals crystals CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, however their Curie temperature is significantly lowered when reducing down to monolayer/few layers. Herein, using renormalized spin-wave theory and first-principles electronic structure theory, we present a theoretical study of electrically tunable 2D ferromagnetism in van der Waals layered CrSBr and CrSeBr semiconductors with high Curie temperature of ~150K and sizable band gap. High transition temperature is attributed to strong anion-mediated superexchange interaction and a sizable spin-wave excitation gap due to large exchange and single-ion anisotropy. Remarkably, hole and electron doping can switch magnetization easy axis from in-plane to out-of-plane direction. These unique characteristics establish monolayer CrSBr and CrSeBr as promising platform for realizing 2D spintronics and magnetoelectrics such as 2D spin field effect transistor.

preprint2020arXiv

Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture

Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer $T_d$-WTe$_2$, have been reported to show superconductivity at temperatures near 1 K. Here we report superconductivity in semimetallic monolayer $T_d$-MoTe$_2$. The critical temperature $T_\textrm{c}$ reaches 8 K, a sixty-fold enhancement as compared to the bulk. This anomalous increase in $T_\textrm{c}$ is only observed in monolayers, and may be indicative of electronically mediated pairing. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage, revealing a superconducting dome that extends across both hole and electron pockets. The temperature dependence of the in-plane upper critical field is distinct from that of $2H$ transition metal dichalcogenides (TMDs), consistent with a tilted spin texture as predicted by \textit{ab initio} theory.

preprint2020arXiv

Giant nonlinear photocurrent in $\mathcal{PT}$-symmetric magnetic topological quantum materials

Nonlinear photocurrent in time-reversal invariant noncentrosymmetric systems have attracted substantial interest. Here we propose two new types of second-order nonlinear direct photocurrent as the counterpart of normal shift photocurrent (NSC) and normal injection photocurrent (NIC), namely magnetic shift photocurrent (MSC) and magnetic injection photocurrent (MIC) in time-reversal symmetry and inversion symmetry broken system. We show that MSC is mainly governed by shift vector and interband Berry curvature, and MIC is dominated by absorption strength and asymmetry of the group velocity difference at time-reversed $\pm$$\textbf{k}$ points. MSC and MIC can be induced by circularly and linearly polarized light, respectively, in $\mathcal{PT}$-symmetric systems with $\mathcal{P}$ and $\mathcal{T}$ being individually broken. Taking $\mathcal{PT}$-symmetric magnetic topological quantum material bilayer antiferromagnetic (AFM) MnBi$_2$Te$_4$ as an example, we predict the presence of large MIC in the terahertz frequency regime which can be magnetically switched between two AFM states with time-reversed spin orderings. While NSC vanishes in $\mathcal{T}$-symmetric systems, external electric field breaks $\mathcal{PT}$ symmetry and enables large NSC response which can be electrically switched. MIC and NSC are perpendicular to each other upon linearly $x$/$y$-polarized light, and are highly tunable under electric field, resulting in giant nonlinear photocurrent response down to a few THz regime. It suggests bilayer AFM MnBi$_2$Te$_4$ as a tunable platform with rich THz and magneto-optoelectronic applications. The present work reveals that nonlinear photocurrent provides a powerful tool for deciphering magnetic structures and interactions, particularly fruitful for probing and understanding magnetic topological quantum materials.

preprint2020arXiv

Graph Neural Network for Hamiltonian-Based Material Property Prediction

Development of next-generation electronic devices for applications call for the discovery of quantum materials hosting novel electronic, magnetic, and topological properties. Traditional electronic structure methods require expensive computation time and memory consumption, thus a fast and accurate prediction model is desired with increasing importance. Representing the interactions among atomic orbitals in any material, a material Hamiltonian provides all the essential elements that control the structure-property correlations in inorganic compounds. Effective learning of material Hamiltonian by developing machine learning methodologies therefore offers a transformative approach to accelerate the discovery and design of quantum materials. With this motivation, we present and compare several different graph convolution networks that are able to predict the band gap for inorganic materials. The models are developed to incorporate two different features: the information of each orbital itself and the interaction between each other. The information of each orbital includes the name, relative coordinates with respect to the center of super cell and the atom number, while the interaction between orbitals are represented by the Hamiltonian matrix. The results show that our model can get a promising prediction accuracy with cross-validation.

preprint2020arXiv

Large Family of Two-Dimensional Ferroelectric Metals Discovered via Machine Learning

Ferroelectricity and metallicity are usually believed not to coexist because conducting electrons would screen out static internal electric fields. In 1965, Anderson and Blount proposed the concept of 'ferroelectric metal', however, it is only until recently that very rare ferroelectric metals were reported. Here, by combining high-throughput ab initio calculations and data-driven machine learning method with new electronic orbital based descriptors, we systematically investigated a large family (2,964) of two-dimensional (2D) bimetal phosphates, and discovered 60 stable ferroelectrics with out-of-plane polarization, including 16 ferroelectric metals and 44 ferroelectric semiconductors that contain seven multiferroics. The ferroelectricity origins from spontaneous symmetry breaking induced by the opposite displacements of bimetal atoms, and the full-d-orbital coinage metal elements cause larger displacements and polarization than other elements. For 2D ferroelectric metals, the odd electrons per unit cell without spin polarization may lead to a half-filled energy band around Fermi level and is responsible for the metallicity. It is revealed that the conducting electrons mainly move on a single-side surface of the 2D layer, while both the ionic and electric contributions to polarization come from the other side and are vertical to the above layer, thereby causing the coexistence of metallicity and ferroelectricity. Van der Waals heterostructures based on ferroelectric metals may enable the change of Schottky barrier height or the Schottky-Ohmic contact type and induce a dramatic change of their vertical transport properties. Our work greatly expands the family of 2D ferroelectric metals and will spur further exploration of 2D ferroelectric metals.

preprint2019arXiv

Ferroelectric nonlinear anomalous Hall effect in few-layer WTe$_2$

Under broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field, known as classical Hall effect. However, this symmetry constraint can be relaxed in the nonlinear regime, thereby enabling nonlinear anomalous Hall current in time-reversal invariant materials - an underexplored realm with exciting new opportunities beyond classical linear Hall effect. Here, using group theory and first-principles theory, we demonstrate a remarkable ferroelectric nonlinear anomalous Hall effect in time-reversal invariant few-layer WTe$_2$ where nonlinear anomalous Hall current switches in odd-layer WTe$_2$ while remaining invariant in even-layer WTe$_2$ upon ferroelectric transition. This even-odd oscillation of ferroelectric nonlinear anomalous Hall effect was found to originate from the absence and presence of Berry curvature dipole reversal and shift dipole reversal due to distinct ferroelectric transformation in even and odd-layer WTe$_2$. Our work not only treats Berry curvature dipole and shift dipole on an equal footing to account for intraband and interband contributions to nonlinear anomalous Hall effect, but also establishes Berry curvature dipole and shift dipole as new order parameters for noncentrosymmetric materials. The present findings, therefore, suggest that ferroelectric metals and Weyl semimetals may offer unprecedented opportunities for the development of nonlinear quantum electronics.

preprint2016arXiv

Equivalent-neighbor Potts models in two dimensions

We investigate the two-dimensional $q=3$ and 4 Potts models with a variable interaction range by means of Monte Carlo simulations. We locate the phase transitions for several interaction ranges as expressed by the number $z$ of equivalent neighbors. For not too large $z$, the transitions fit well in the universality classes of the short-range Potts models. However, at longer ranges the transitions become discontinuous. For $q=3$ we locate a tricritical point separating the continuous and discontinuous transitions near $z=80$, and a critical fixed point between $z=8$ and 12. For $q=4$ the transition becomes discontinuous for $z > 16$. The scaling behavior of the $q=4$ model with $z=16$ approximates that of the $q=4$ merged critical-tricritical fixed point predicted by the renormalization scenario.

preprint2015arXiv

Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors

Two-dimensional (2D) topological crystalline insulators (TCIs) were recently predicted in thin films of the SnTe class of IV-VI semiconductors, which can host metallic edge states protected by mirror symmetry. As thickness decreases, quantum confinement effect will increase and surpass the inverted gap below a critical thickness, turning TCIs into normal insulators. Surprisingly, based on first-principles calculations, here we demonstrate that (001) monolayers of rocksalt IV-VI semiconductors XY (X=Ge, Sn, Pb and Y= S, Se, Te) are 2D TCIs with the fundamental band gap as large as 260 meV in monolayer PbTe, providing a materials platform for realizing two-dimensional Dirac fermion systems with tunable band gap. This unexpected nontrivial topological phase stems from the strong {\it crystal field effect} in the monolayer, which lifts the degeneracy between $p_{x,y}$ and $p_z$ orbitals and leads to band inversion between cation $p_z$ and anion $p_{x,y}$ orbitals. This crystal field effect induced topological phase offers a new strategy to find and design other atomically thin 2D topological materials.

preprint2015arXiv

First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach

We present a first-principles investigation of the excited-state properties of electron acceptors in organic photovoltaics including C$_{60}$, C$_{70}$, [6,6]-phenyl-C$_{61}$-butyric-acid-methyl-ester ([C$_{60}$]PCBM), and bis-[C$_{60}$]PCBM using many-body perturbation theory within the Hedin's $G_0W_0$ approximation and an efficient Lanczos approach. Calculated vertical ionization potentials (VIP) and vertical electron affinities (VEA) of C$_{60}$ and C$_{70}$ agree very well with experimental values measured in gas phase. The density of states of all three molecules is also compared to photoemission and inverse photoemission spectra measured on thin-films, exhibiting a close agreement - a rigid energy-gap renormalization owing to intermolecular interactions in the thin-films. In addition, it is shown that the low-lying unoccupied states of [C$_{60}$]PCBM are all derived from the highest-occupied molecular orbitals and the lowest-unoccupied molecular orbitals of fullerene C$_{60}$. The functional side group in [C$_{60}$]PCBM introduces a slight electron transfer to the fullerene cage, resulting in small decreases of both VIP and VEA. This small change of VEA provides a solid justification for the increase of open-circuit voltage when replacing fullerene C$_{60}$ with [C$_{60}$]PCBM as the electron acceptor in bulk heterojunction polymer solar cells.

preprint2014arXiv

Envelope function method for electrons in slowly-varying inhomogeneously deformed crystals

We develop a new envelope-function formalism to describe electrons in slowly-varying inhomogeneously strained semiconductor crystals. A coordinate transformation is used to map a deformed crystal back to geometrically undeformed structure with deformed crystal potential. The single-particle Schrödinger equation is solved in the undeformed coordinates using envelope function expansion, wherein electronic wavefunctions are written in terms of strain-parametrized Bloch functions modulated by slowly varying envelope functions. Adopting local approximation of electronic structure, the unknown crystal potential in Schrödinger equation can be replaced by the strain-parametrized Bloch functions and the associated strain-parametrized energy eigenvalues, which can be constructed from unit-cell level ab initio or semi-empirical calculations of homogeneously deformed crystals at a chosen crystal momentum. The Schrödinger equation is then transformed into a coupled differential equation for the envelope functions and solved as a generalized matrix eigenvector problem. As the envelope functions are slowly varying, coarse spatial or Fourier grid can be used to represent the envelope functions, enabling the method to treat relatively large systems. We demonstrate the effectiveness of this method using a one-dimensional model, where we show that the method can achieve high accuracy in the calculation of energy eigenstates with relatively low cost compared to direct diagonalization of Hamiltonian. We further derive envelope function equations that allow the method to be used empirically, in which case certain parameters in the envelope function equations will be fitted to experimental data.

preprint2014arXiv

Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric field. We propose a novel topological field effect transistor made of these atomic layer materials and their van der Waals heterostructures. Our device exhibits parametrically enhanced charge-spin conductance through topologically protected transport channels, and can be rapidly switched off by electric field through topological phase transition instead of carrier depletion. Our work provides a practical material platform and device architecture for topological quantum electronics.

preprint2014arXiv

Topological Crystalline Insulator Nanomembrane with Strain-Tunable Band Gap

The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of a free-standing nanomembrane of topological crystalline insulator (TCI) SnTe and Pb$_{1-x}$Sn$_x$(Se,Te) are highly tunable by engineering elastic strain and controlling membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We propose a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembrane with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open up new avenues for fabricating piezoresistive devices, thermoelectrics, infrared detectors and energy-efficient electronic and optoelectronic devices based on TCI nanomembrane.

preprint2011arXiv

Photoelectron properties of DNA and RNA bases from many-body perturbation theory

The photoelectron properties of DNA and RNA bases are studied using many-body perturbation theory within the GW approximation, together with a recently developed Lanczos-chain approach. Calculated vertical ionization potentials, electron affinities, and total density of states are in good agreement with experimental values and photoemission spectra. The convergence benchmark demonstrates the importance of using an optimal polarizability basis in the GW calculations. A detailed analysis of the role of exchange and correlation in both many-body and density-functional theory calculations shows that while self-energy corrections are strongly orbital-dependent, they nevertheless remain almost constant for states that share the same bonding character. Finally, we report on the inverse lifetimes of DNA and RNA bases, that are found to depend linearly on quasi-particle energies for all deep valence states. In general, our G0W0-Lanczos approach provides an efficient yet accurate and fully converged description of quasiparticle properties of five DNA and RNA bases.

preprint2009arXiv

Single-cluster dynamics for the random-cluster model

We formulate a single-cluster Monte Carlo algorithm for the simulation of the random-cluster model. This algorithm is a generalization of the Wolff single-cluster method for the $q$-state Potts model to non-integer values $q>1$. Its results for static quantities are in a satisfactory agreement with those of the existing Swendsen-Wang-Chayes-Machta (SWCM) algorithm, which involves a full cluster decomposition of random-cluster configurations. We explore the critical dynamics of this algorithm for several two-dimensional Potts and random-cluster models. For integer $q$, the single-cluster algorithm can be reduced to the Wolff algorithm, for which case we find that the autocorrelation functions decay almost purely exponentially, with dynamic exponents $z_{\rm exp} =0.07 (1), 0.521 (7)$, and $1.007 (9)$ for $q=2, 3$, and 4 respectively. For non-integer $q$, the dynamical behavior of the single-cluster algorithm appears to be very dissimilar to that of the SWCM algorithm. For large critical systems, the autocorrelation function displays a range of power-law behavior as a function of time. The dynamic exponents are relatively large. We provide an explanation for this peculiar dynamic behavior.