Source author record

Herre S. J. van der Zant

Herre S. J. van der Zant appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

73works
11topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

73 published item(s)

preprint2022arXiv

Magnetic Field Universality of the Kondo Effect Revealed by Thermocurrent Spectroscopy

Probing the universal low temperature magnetic field scaling of Kondo-correlated quantum dots via electrical conductance has proved to be experimentally challenging. Here, we show how to probe this in nonlinear thermocurrent spectroscopy applied to a molecular quantum dot in the Kondo regime. Our results demonstrate that the bias-dependent thermocurrent is a sensitive probe of universal Kondo physics, directly measures the splitting of the Kondo resonance in a magnetic field, and opens up possibilities for investigating nanosystems far from thermal and electrical equilibrium.

preprint2021arXiv

Self-sealing complex oxide resonators

Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity of pressure sensors to be sealed by a simple anneal. To test the hermeticity, we study the gas permeation time constants in nano-mechanical resonators made from SrRuO3 and SrTiO3 membranes suspended over SiO2/Si cavities which show an improvement up to 4 orders of magnitude in the permeation time constant after annealing the devices for 15 minutes. Similar devices fabricated on Si3N4/Si do not show such improvements, suggesting that the adhesion increase over SiO2 is mediated by oxygen bonds that are formed at the SiO2/complex oxide interface during the self-sealing anneal. We confirm the enhancement of adhesion by picosecond ultrasonics measurements which show an increase in the interfacial stiffness by 70% after annealing. Since it is straigthforward to apply, the presented self-sealing method is thus a promising route toward realizing ultrathin hermetic pressure sensors.

preprint2021arXiv

Tunable strong coupling of mechanical resonance between spatially separated FePS$_3$ nanodrums

Coupled nanomechanical resonators made of two-dimensional materials are promising for processing information with mechanical modes. However, the challenge for these types of systems is to control the coupling. Here, we demonstrate strong coupling of motion between two suspended membranes of the magnetic 2D material FePS$_3$. We describe a tunable electromechanical mechanism for control over both the resonance frequency and the coupling strength using a gate voltage electrode under each membrane. We show that the coupling can be utilized for transferring data from one drum to the other by amplitude modulation. Finally, we also study the temperature dependence of the coupling, and in particular how it is affected by the antiferromagnetic phase transition characteristic of this material. The presented electrical coupling of resonant magnetic 2D membranes holds promise of transferring mechanical energy over a distance at low electrical power, thus enabling novel data readout and information processing technologies.

preprint2020arXiv

A Mechanically Tunable Quantum Dot in a Graphene Break Junction

Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent modulation of the tunnel barrier transparencies, remains challenging and is typically addressed using electrostatic gating. We investigate charge transport in back-gated graphene mechanical break junctions and reveal Coulomb blockade physics characteristic of a single, high-quality QD when a nanogap is opened in a graphene constriction. By mechanically controlling the distance across the newly-formed graphene nanogap, we achieve reversible tunability of the tunnel coupling to the drain electrode by five orders of magnitude, while keeping the source-QD tunnel coupling constant. These findings indicate that the tunnel coupling asymmetry can be significantly modulated with a mechanical tuning knob and has important implications for the development of future graphene-based devices, including energy converters and quantum calorimeters.

preprint2020arXiv

Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3

SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and orbital states. We show that the low-temperature negative magnetoresistance is anisotropic with respect to the magnetic field orientation, and its angular dependence reveals the appearance of a fourfold symmetric component above a critical magnetic field. We show that this AMR component is of magnetocrystalline origin, and attribute the observed transition to a field-induced magnetic state in SrIrO3.

preprint2020arXiv

Enhancing nonlinear damping by parametric-direct internal resonance

Mechanical sources of nonlinear damping play a central role in modern physics, from solid-state physics to thermodynamics. The microscopic theory of mechanical dissipation [M. I . Dykman, M. A. Krivoglaz, Physica Status Solidi (b) 68, 111 (1975)] suggests that nonlinear damping of a resonant mode can be strongly enhanced when it is coupled to a vibration mode that is close to twice its resonance frequency. To date, no experimental evidence of this enhancement has been realized. In this letter, we experimentally show that nanoresonators driven into parametric-direct internal resonance provide supporting evidence for the microscopic theory of nonlinear dissipation. By regulating the drive level, we tune the parametric resonance of a graphene nanodrum over a range of 40-70 MHz to reach successive two-to-one internal resonances, leading to a nearly two-fold increase of the nonlinear damping. Our study opens up an exciting route towards utilizing modal interactions and parametric resonance to realize resonators with engineered nonlinear dissipation over wide frequency range.

preprint2020arXiv

Graphene Effusion-based Gas Sensor

Porous, atomically thin graphene membranes have interesting properties for filtration and sieving applications because they can accommodate small pore sizes, while maintaining high permeability. These membranes are therefore receiving much attention for novel gas and water purification applications. Here we show that the atomic thickness and high resonance frequency of porous graphene membranes enables an effusion based gas sensing method that distinguishes gases based on their molecular mass. Graphene membranes are used to pump gases through nanopores using optothermal forces. By monitoring the time delay between the actuation force and the membrane mechanical motion, the permeation time-constants of various gases are shown to be significantly different. The measured linear relation between the effusion time constant and the square root of the molecular mass provides a method for sensing gases based on their molecular mass. The presented microscopic effusion based gas sensor can provide a small, low-power alternative for large, high-power, mass-spectrometry and optical spectrometry based gas sensing methods.

preprint2020arXiv

Magnetically-Tuned Kondo Effect in a Molecular Double Quantum Dot: Role of the Anisotropic Exchange

We investigate theoretically and experimentally the singlet-triplet Kondo effect induced by a magnetic field in a molecular junction. Temperature dependent conductance, $G(T)$, is calculated by the numerical renormalization group, showing a strong imprint of the relevant low energy scales, such as the Kondo temperature, exchange and singlet-triplet splitting. We demonstrate the stability of the singlet-triplet Kondo effect against weak spin anisotropy, modeled by an anisotropic exchange. Moderate spin anisotropy manifests itself by lowering the Kondo plateaus, causing the $G(T)$ to deviate from a standard temperature dependence, expected for a spin-half Kondo effect. We propose this scenario as an explanation for anomalous $G(T)$, measured in an organic diradical molecule coupled to gold contacts. We uncover certain new aspects of the singlet-triplet Kondo effect, such as coexistence of spin-polarization on the molecule with Kondo screening and non-perturbative parametric dependence of an effective magnetic field induced by the leads.

preprint2020arXiv

MoS$_2$-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

preprint2020arXiv

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

preprint2020arXiv

Nanoelectromechanical Sensors based on Suspended 2D Materials

The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.

preprint2020arXiv

Semi-permeability of graphene nanodrums in sucrose solution

Semi-permeable membranes are important elements in water purification and energy generation applications, for which the atomic thickness and strength of graphene can enhance efficiency and permeation rate while maintaining good selectivity. Here, we show that an osmotic pressure difference forms across a suspended graphene membrane as a response to a sucrose concentration difference, providing evidence for its semi-permeability. This osmotic pressure difference is detected via the deflection of the graphene membrane that is measured by atomic force microscopy. Using this technique, the time dependence of this deflection allows us to measure the water permeation rate of a single 3.4 $μ$m diameter graphene membrane. Its value is close to the expected value of a single nanopore in graphene. The method thus allows one to experimentally study the semi-permeability of graphene membranes at the microscale when the leakage rate is miniscule. It can therefore find use in the development of graphene membranes for filtration, and can enable sensors that measure the concentration and composition of solutions.

preprint2020arXiv

Sensitive capacitive pressure sensors based on graphene membrane arrays

The high flexibility, impermeability and strength of graphene membranes are key properties that can enable the next generation of nanomechanical sensors. However, for capacitive pressure sensors the sensitivity offered by a single suspended graphene membrane is too small to compete with commercial sensors. Here, we realize highly sensitive capacitive pressure sensors consisting of arrays of nearly ten thousand small, freestanding double-layer graphene membranes. We fabricate large arrays of small diameter membranes using a procedure that maintains the superior material and mechanical properties of graphene, even after high-temperature anneals. These sensors are readout using a low cost battery-powered circuit board, with a responsivity of up to 47.8 aF Pa$^{-1}$ mm$^{-2}$, thereby outperforming commercial sensors.

preprint2020arXiv

Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré

Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability.

preprint2020arXiv

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.

preprint2019arXiv

Magnetic and electronic phase transitions probed by nanomechanical resonance

Two-dimensional (2D) materials enable new types of magnetic and electronic phases mediated by their reduced dimensionality like magic-angle induced phase transitions, 2D Ising antiferromagnets and ferromagnetism in 2D atomic layers and heterostructures. However, only a few methods are available to study these phase transitions, which for example is particularly challenging for antiferromagnetic materials. Here, we demonstrate that these phases can be probed by the mechanical motion: the temperature dependent resonance frequency and quality factor of multilayer 2D material membranes show clear anomalies near the phase transition temperature, which are correlated to anomalies in the specific heat of the materials. The observed coupling of mechanical degrees of freedom to magnetic and electronic order is attributed to thermodynamic relations that are not restricted to van der Waals materials. Nanomechanical resonators, therefore, offer the potential to characterize phase transitions in a wide variety of materials, including those that are antiferromagnetic, insulating or so thin that conventional bulk characterization methods become unsuitable.

preprint2019arXiv

Nonequilibrium Thermodynamics of Acoustic Phonons in Suspended Graphene

Recent theory has predicted large temperature differences between the in-plane (LA and TA) and out-of-plane (ZA) acoustic phonon baths in locally-heated suspended graphene. To verify these predictions, and their implications for understanding the nonequilibrium thermodynamics of 2D materials, experimental techniques are needed. Here, we present a method to determine the acoustic phonon bath temperatures from the frequency-dependent mechanical response of suspended graphene to a power modulated laser. The mechanical motion reveals two counteracting contributions to the thermal expansion force, that are attributed to fast positive thermal expansion by the in-plane phonons and slower negative thermal expansion by the out-of-plane phonons. The magnitude of the two forces reveals that the in-plane and flexural acoustic phonons are at very different temperatures in the steady-state, with typically observed values of the ratio $ΔT_{\mathrm{LA+TA}}/ΔT_{\mathrm{ZA}}$ between 0.2 and 3.7. These deviations from the generally used local thermal equilibrium assumption ($ΔT_{\mathrm{LA+TA}}=ΔT_{\mathrm{ZA}}$) can affect the experimental analysis of thermal properties of 2D materials.

preprint2019arXiv

Phonon Scattering at Kinks in Suspended Graphene

Recent experiments have shown surprisingly large thermal time constants in suspended graphene ranging from 10 to 100 ns in drums with a diameter ranging from 2 to 7 microns. The large time constants and their scaling with diameter points towards a thermal resistance at the edge of the drum. However, an explanation of the microscopic origin of this resistance is lacking. Here, we show how phonon scattering at a kink in the graphene, e.g. formed by sidewall adhesion at the edge of the suspended membrane, can cause a large thermal time constant. This kink strongly limits the fraction of flexural phonons that cross the suspended graphene edge, which causes a thermal interface resistance at its boundary. Our model predicts thermal time constants that are of the same order of magnitude as experimental data, and shows a similar dependence on the circumference. Furthermore, the model predicts the relative in-plane and out-of-plane phonon contributions to graphene's thermal expansion force, in agreement with experiments. We thus show, that in contrast to conventional thermal (Kapitza) resistance which occurs between two different materials, in 2D materials another type of thermal interface resistance can be geometrically induced in a single material.

preprint2019arXiv

Tunneling spectroscopy of localized states of $\mathrm{WS}_2$ barriers in vertical van der Waals heterostructures

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here, we study localized states in $\mathrm{WS}_2$ and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/$\mathrm{WS}_2$/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.

preprint2016arXiv

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy

We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.

preprint2016arXiv

Charge Transport through Conjugated Azomethine-based Single Molecules for Optoelectronic Applications

The single-molecule conductance of a 3-ring, conjugated azomethine was studied using the mechanically controlled breakjunction technique. Charge transport properties are found to be comparable to vinyl-based analogues; findings are supported with density functional calculations. The simple preparation and good transport properties make azomethine-based molecules an attractive class for use in polymer and single-molecule organic electronics.

preprint2016arXiv

Colorimetry technique for scalable characterization of suspended graphene

Previous statistical studies on the mechanical properties of chemical-vapor-deposited (CVD) suspended graphene membranes have been performed by means of measuring individual devices or with techniques that affect the material. Here, we present a colorimetry technique as a parallel, non-invasive, and affordable way of characterizing suspended graphene devices. We exploit Newton rings interference patterns to study the deformation of a double-layer graphene drum 13.2 micrometer in diameter when a pressure step is applied. By studying the time evolution of the deformation, we find that filling the drum cavity with air is 2-5 times slower than when it is purged.

preprint2016arXiv

Enhanced superconductivity in atomically thin TaS2

The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.

preprint2016arXiv

Folded MoS2 layers with reduced interlayer coupling

We study molybdenum disulfide (MoS2) structures generated by folding single- and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence emission yield. We additionally find that folded single-layer MoS2 structures show a contribution to photoluminescence spectra of both neutral and charged excitons, which is a characteristic feature of single-layer MoS2 that has not been observed in multilayer MoS2. The results presented here open the door to fabrication of multilayered MoS2 samples with high optical absorption while maintaining the advantageous enhanced photoluminescence emission of single-layer MoS2 by controllably twisting the MoS2 layers.

preprint2016arXiv

Near room-temperature memory devices based on hybrid spin-crossover SiO2 nanoparticles coupled to single-layer graphene nanoelectrodes

In this paper, we report on the charge transport properties of hybrid nanoparticles (NPs) based on the polymeric 1D compound [Fe(Htrz)2(trz)](BF4), which is one of the most promising SCO systems for designing electronic devices. In particular, we used for the first time hybrid SCO NPs covered with a silica shell and placed in between single-layer graphene electrodes. We evidence a reproducible thermal hysteresis loop in the conductance above room-temperature, meaning that no degradation of the current levels has been detected; we thus conclude that the robustness of the spin-transition is significantly improved as compared with previous results and with other reports where even larger assemblies and SCO objects were involved. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.

preprint2016arXiv

Spatial conductivity mapping of unprotected and capped black phosphorus using microwave microscopy

Thin layers of black phosphorus present an ideal combination of a 2D material with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which involves water, oxygen and light. We have measured the spatial profile of the conductivity on flakes of black phosphorus as a function of time using scanning microwave impedance microscopy. A microwave excitation (3 GHz) allows to image a conducting sample even when covered with a dielectric layer. We observe that on bare black phosphorus, the conductivity changes drastically over the whole surface within a day. We demonstrate that the degradation process is slowed down considerably by covering the material with a 10 nm layer of hafnium oxide. It is stable for more than a week, opening up a route towards stable black phosphorus devices in which the high dielectric constant of hafnium oxide can be exploited. Covering black phosphorus with a 15 nm boron nitride flake changes the degradation process qualitatively, it is dominated by the edges of the flake indicating a diffusive process and happens on the scale of days.

preprint2016arXiv

Spin excitations in an all-organic double quantum dot molecule

We realize a strongly coupled double quantum dot in a single all-organic molecule by introducing a non-conjugated bridge in between two identical conjugated moieties. Spin-1/2 Kondo and Kondo enhanced low-energy excitations for respectively the odd and even electron occupation are observed in off-resonant transport. The ground state in the even occupation can be the singlet or the triplet state varying between samples. This observation suggests that both anti-ferromagnetic and ferromagnetic interactions between spins are of the same order of magnitude.

preprint2016arXiv

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2) - molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 uA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.

preprint2016arXiv

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance.

preprint2016arXiv

Visualizing the motion of graphene nanodrums

Membranes of suspended two-dimensional materials show a large variability in mechanical properties, in part due to static and dynamic wrinkles. As a consequence, experiments typically show a multitude of nanomechanical resonance peaks, which makes an unambiguous identification of the vibrational modes difficult. Here, we probe the motion of graphene nanodrum resonators with spatial resolution using a phase-sensitive interferometer. By simultaneously visualizing the local phase and amplitude of the driven motion, we show that unexplained spectral features represent split degenerate modes. When taking these into account, the resonance frequencies up to the eighth vibrational mode agree with theory. The corresponding displacement profiles however, are remarkably different from theory, as small imperfections increasingly deform the nodal lines for the higher modes. The Brownian motion, which is used to calibrate the local displacement, exhibits a similar mode pattern. The experiments clarify the complicated dynamic behaviour of suspended two-dimensional materials, which is crucial for reproducible fabrication and applications.

preprint2015arXiv

Environmental instability of few-layer black phosphorus

We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of moisture from air. We find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes. Interestingly, flakes can be etched down to single layer (phosphorene) thicknesses. BP's strong affinity for water greatly modifies the performance of fabricated field-effect transistors (FETs) measured in ambient conditions. Upon exposure to air, we differentiate between two timescales for doping of BP FET transfer characterisitcs: a short timescale (minutes) in which a shift in the threshold voltage occurs due to physisorbed oxygen and nitrogen, and a long timescale (hours) in which p-type doping occurs from water absorption. Continuous measurements of BP FETs in air reveal eventual degradation and break-down of the channel material after several days due to the layer-by-layer etching process.

preprint2015arXiv

Fabrication of hybrid molecular devices using multi-layer graphene break junctions

We report on the fabrication of hybrid molecular devices employing multilayer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope (HIM) or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.

preprint2015arXiv

Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors

Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, due to the strong photogating effect, these direct-band gap, multi-layer phototransistors produce ultra-high gains of (9.8 +- 2.5) x 10^4 A/W and inferred detectivities of (3.3 +- 0.8) x 10^13 Jones, putting In2Se3 amongst the most sensitive 2D materials for photodetection studied to date.

preprint2015arXiv

High-Q Tantalum Oxide Nanomechanical Resonators by Laser-Oxidation of TaSe2

Controlling the strain in two-dimensional materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by laser-oxidation of nano-drumhead resonators made out of tantalum diselenide (TaSe2), a layered 2D material belonging to the metal dichalcogenides. Prior to the study of their mechanical properties with a laser interferometer, we checked the oxidation and crystallinity of the freely-suspended tantalum oxide in a high-resolution electron microscope. We show that the stress of tantalum oxide resonators increase by 140 MPa (with respect to pristine TaSe2 resonators) which causes an enhancement of quality factor (14 times larger) and resonance frequency (9 times larger) of these resonators.

preprint2015arXiv

Mechanics of freely-suspended ultrathin layered materials

The study of atomically thin two-dimensional materials is a young and rapidly growing field. In the past years, a great advance in the study of the remarkable electrical and optical properties of 2D materials fabricated by exfoliation of bulk layered materials has been achieved. Due to the extraordinary mechanical properties of these atomically thin materials, they also hold a great promise for future applications such as flexible electronics. For example, this family of materials can sustain very large deformations without breaking. Due to the combination of small dimensions, high Young's modulus and high crystallinity of 2D materials, they have attracted the attention of the field of nanomechanical systems as high frequency and high quality factor resonators. In this article, we review experiments on static and dynamic response of 2D materials. We provide an overview and comparison of the mechanics of different materials, and highlight the unique properties of these thin crystalline layers. We conclude with an outlook of the mechanics of 2D materials and future research directions such as the coupling of the mechanical deformation to their electronic structure.

preprint2015arXiv

Photocurrent generation with two-dimensional van der Waals semiconductors

Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10\%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.

preprint2015arXiv

Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27 +- 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of -32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications.

preprint2015arXiv

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 K to 570 K, due to the anharmonic vibrations of the lattice which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors such as MoS2, MoSe2, WSe2 or black phosphorus (BP). This marked temperature dependence of the Raman could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a non-invasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to a lower interlayer coupling in the nanosheets.

preprint2015arXiv

TiS3 transistors with tailored morphology and electrical properties

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.

preprint2014arXiv

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

Deterministic transfer of two-dimensional crystals constitutes a crucial step towards the fabrication of heterostructures based on artificial stacking of two-dimensional materials. Moreover, control on the positioning of two-dimensional crystals facilitates their integration in complex devices, which enables the exploration of novel applications and the discovery of new phenomena in these materials. Up to date, deterministic transfer methods rely on the use of sacrificial polymer layers and wet chemistry to some extent. Here, we develop an all-dry transfer method that relies on viscoelastic stamps and does not employ any wet chemistry step. This is found very advantageous to freely suspend these materials as there are no capillary forces involved in the process. Moreover, the whole fabrication process is quick, efficient, clean, and it can be performed with high yield.

preprint2014arXiv

Electron-vibron coupling effects on electron transport via a single-molecule magnet

We investigate how the electron-vibron coupling influences electron transport via an anisotropic magnetic molecule, such as a single-molecule magnet (SMM) Fe$_4$, by using a model Hamiltonian with parameter values obtained from density-functional theory (DFT). Magnetic anisotropy parameters, vibrational energies, and electron-vibron coupling strengths of the Fe$_4$ are computed using DFT. A giant spin model is applied to the Fe$_4$ with only two charge states, specifically a neutral state with the total spin $S=5$ and a singly charged state with $S=9/2$, which is consistent with our DFT result and experiments on Fe$_4$ single-molecule transistors. In sequential electron tunneling, we find that the magnetic anisotropy gives rise to new features in conductance peaks arising from vibrational excitations. In particular, the peak height shows a strong, unusual dependence on the direction as well as magnitude of applied B field. The magnetic anisotropy also introduces vibrational satellite peaks whose position and height are modified with the direction and magnitude of applied B field. Furthermore, when multiple vibrational modes with considerable electron-vibron coupling have energies close to one another, a low-bias current is suppressed, independently of gate voltage and applied B field, although that is not the case for a single mode with the similar electron-vibron coupling. In the former case, the conductance peaks reveal a stronger B-field dependence than in the latter case. The new features appear because the magnetic anisotropy barrier is of the same order of magnitude as the energies of vibrational modes with significant electron-vibron coupling. Our findings clearly show the interesting interplay between magnetic anisotropy and electron-vibron coupling in electron transport via the Fe$_4$. The similar behavior can be observed in transport via other anisotropic magnetic molecules.

preprint2014arXiv

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors

Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm2/V s and current ON/OFF ratio larger than 103. Upon illumination, the black phosphorus transistors show response to excitation wavelengths from the visible up to 940 nm and rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W and it could be drastically enhanced by engineering a detector based on a PN junction. The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetection across the visible and near-infrared part of the electromagnetic spectrum.

preprint2014arXiv

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves.

preprint2014arXiv

Isolation and characterization of few-layer black phosphorus

Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Raman spectroscopy and transmission electron microscopy in a fast and reliable way. Moreover, we demonstrate that the exfoliated flakes are highly crystalline and that they are stable even in free-standing form through Raman spectroscopy and transmission electron microscopy measurements. A strong thickness dependence of the band structure is found by density functional theory calculations. The exciton binding energy, within an effective mass approximation, is also calculated for different number of layers. Our computational results for the optical gap are consistent with preliminary photoluminescence results on thin flakes. Finally, we study the environmental stability of black phosphorus flakes finding that the flakes are very hydrophilic and that long term exposure to air moisture etches black phosphorus away. Nonetheless, we demonstrate that the aging of the flakes is slow enough to allow fabrication of field-effect transistors with strong ambipolar behavior. Density functional theory calculations also give us insight into the water-induced changes of the structural and electronic properties of black phosphorus.

preprint2014arXiv

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms: the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of two larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by e.g. an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizeable thermal gradient upon illumination.

preprint2014arXiv

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN junction, typically defined by ionic dopants in a semiconductor. In atomically thin semiconductors, the doping level can be controlled by the field-effect without need of implanting dopants in the lattice, which makes 2D semiconductors prospective materials to implement electrically tunable PN junctions. However, most 2D semiconducting materials do not show ambipolar P-type and N-type field-effect transport, necessary to realize PN junctions. Few-layer black phosphorus is a recently isolated 2D semiconductor that presents a direct bandgap, high mobility, current on/off ratio and ambipolar operation. Here, we fabricate few-layer black phosphorus (b-P) field-effect transistors with split bottom gates and crystalline hexagonal boron nitride (h-BN) dielectric. We demonstrate electrostatic control of the local charge carrier type and density above each gate in the device, tuning its electrical behaviour from metallic to rectifying. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltage, which we attribute to the separation of electron-hole pairs driven by the internal electric field at the junction region. Due to the small bandgap of the material, we observe photocurrents and photovoltages for illumination wavelengths up to 940 nm, attractive for energy harvesting applications in the near-infrared region

preprint2014arXiv

Single-layer MoS2 mechanical resonators

Here, we demonstrate the fabrication of single-layer MoS2 mechanical resonators. The fabricated resonators have fundamental resonance frequencies in the order of 10 MHz to 30 MHz (depending on their geometry) and their quality factor is about ~55 at room temperature in vacuum. The dynamical properties clearly indicate that monolayer MoS2 membranes are in the membrane limit (i.e., tension dominated), in contrast to their thicker counterparts, which behave as plates. We also demonstrate clear signatures of nonlinear behaviour of our atomically thin membranes, thus providing a starting point for future investigations on the nonlinear dynamics of monolayer nanomechanical resonators.

preprint2014arXiv

Spin switching in electronic devices based on 2D assemblies of spin-crossover nanoparticles

In this communication we study the transport properties of two-dimensional assemblies of [Fe(Htrz)2(trz)](BF4) spin-crossover nanoparticles (NPs) with two different morphologies. The NPs have been synthesized made in a similar manner than in our previous study in which single NPs were measured. We prepared free-standing self-assembled monolayer sheets of both SCO NPs formed at the air/liquid interface on holey carbon TEM grids to extract their global arrangement and NP size distributions by STEM-HAADF technique. The SCO NP systems present a rod-like shape and possess two different volumes, corresponding to lengths of 25 nm and 44 nm along the rod direction and average diameters of 10 nm and 6 nm respectively. In a similar manner, sheets of SCO NPs with the two different morphologies were electrically measured by contacting them on pre-patterned gold electrodes substrates. For both NP morphologies, a thermal hysteresis loop in the electrical conductance near room temperature was observed, which was correlated to their morphologies and 2D organization. The most remarkable result was the observation of an unprecedented large change in the electrical conductance of the two spin states, increasing by up to two orders of magnitude in the 2D assemblies of spin-crossover NPs. This value is significantly larger than that obtained in single-NP measurements (~ 3). Although such large conductance changes are not fully understood, our results point at important contributions from its size/morphology-dependence at the nanoscale.

preprint2014arXiv

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination, the TiS3 NR-FETs present an ultrahigh photoresponse of 2910 A/W and fast rise/fall times of ~4 ms. In addition, we measure cutoff frequencies (f3dB) up to 1000 Hz. The strong combination of ultrahigh sensitivity all along the visible spectrum and fast time response of TiS3 nanoribbon transistors put them among the best nanoscale photodetectors to date.

preprint2013arXiv

Large and tunable photo-thermoelectric effect in single-layer MoS2

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photo-thermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that, by an external electric field, can be tuned between -4x10^2 uV/K and -1x10^5 uV/K. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

preprint2013arXiv

Local strain engineering in atomically thin MoS2

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

preprint2013arXiv

Long-range Scanning Tunneling Microscope for the study of nanostructures on insulating substrates

The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.

preprint2013arXiv

The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2

We quantitatively study the Raman and photoluminescence (PL) emission from single layer molybdenum disulfide (MoS2) on dielectric (SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film) and conducting substrates (Au and few-layer graphene). We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the A1g Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoS2-based vertical heterostructures and represent the first step in ad-hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

preprint2012arXiv

Carbon nanotubes: Nonlinear high-Q resonators with strong coupling to single-electron tunneling

Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. We begin by describing several methods to detect the flexural motion of a CNT resonator. Next, we illustrate how single-electron tunneling in quantum dot CNT resonators leads to sharp dips in the mechanical resonance frequency and significant damping. We discuss four different contributions to the nonlinear oscillation of a CNT resonator: beam-like mechanical nonlinearity, nonlinearity due to gate-induced mechanical tension, electrostatic nonlinearity, and nonlinearity due to single-electron tunneling, and provide quantitative estimates of their strengths. Finally, we show how the large response of the resonance frequency of a CNT resonator to a change in gate voltage or tension makes CNT resonators ideally suited for parametric excitation and for studying the coupling between different mechanical modes.

preprint2012arXiv

Elastic properties of freely suspended MoS2 nanosheets

We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of these nanosheets is extremely high (E = 0.33 TPa), comparable to that of graphene oxide, and the deflections are reversible up to tens of nanometers.

preprint2012arXiv

Fast and efficient photodetection in nanoscale quantum-dot junctions

We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum-efficiencies of 38 electrons-per-photon in combination with response times faster than 300 ns. This compact device-architecture may open up new routes for improved photodetector performance in which efficiency and bandwidth do not go at the cost of one another.

preprint2012arXiv

Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

Single-layer MoS2 is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS2 is an indirect bandgap semiconductor similar to silicon, with a gap of 1.2 eV, and therefore deterministic preparation of single MoS2 layers is a crucial step towards exploiting the large direct bandgap of monolayer MoS2 in electronic, optoelectronic, and photovoltaic applications. Although mechanical and chemical exfoliation methods can be used to obtain high quality MoS2 single-layers, the lack of control in the thickness, shape, size, and position of the flakes limits their usefulness. Here we present a technique for controllably thinning multilayered MoS2 down to a single-layer two-dimensional crystal using a laser. We generate single layers in arbitrary shapes and patterns with feature sizes down to 200 nm, and show that the resulting two-dimensional crystals have optical and electronic properties comparable to that of pristine exfoliated MoS2 single layers.

preprint2012arXiv

Mechanical properties of freely suspended atomically thin dielectric layers of mica

We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young's modulus is high (190 GPa), in agreement with the bulk value, which indicates that the exfoliation procedure employed to fabricate these nanolayers does not introduce a noticeable amount of defects. Additionally, ultrathin mica shows low pre-strain and can withstand reversible deformations up to tens of nanometers without breaking. The low pre-tension and high Young's modulus and breaking force found in these ultrathin mica layers demonstrates their prospective use as a complement for graphene in applications requiring flexible insulating materials or as reinforcement in nanocomposites.

preprint2012arXiv

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

We fabricate freely suspended nanosheets of MoS2 which are characterized by quantitative optical microscopy and high resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young's modulus and the initial pre-tension of the nanosheets are determined by performing a nanoscopic version of a bending test experiment. MoS2 sheets show high elasticity and an extremely high Young's modulus (0.30 TPa, 50% larger than steel). These results make them a potential alternative to graphene in applications requiring flexible semiconductor materials.

preprint2012arXiv

Probing the charge of a quantum dot with a nanomechanical resonator

We have used the mechanical motion of a carbon nanotube (CNT) as a probe of the average charge on a quantum dot. Variations of the resonance frequency and the quality factor are determined by the change in average charge on the quantum dot during a mechanical oscillation. The average charge, in turn, is influenced by the gate voltage, the bias voltage, and the tunnel rates of the barriers to the leads. At bias voltages that exceed the broadening due to tunnel coupling, the resonance frequency and quality factor show a double dip as a function of gate voltage. We find that increasing the current flowing through the CNT at the Coulomb peak does not increase the damping, but in fact decreases damping. Using a model with energy-dependent tunnel rates, we obtain quantitative agreement between the experimental observations and the model. We theoretically compare different contributions to the single-electron induced nonlinearity, and show that only one term is significant for both the Duffing parameter and the mode coupling parameter. We also present additional measurements which support the model we develop: Tuning the tunnel barriers of the quantum dot to the leads gives a 200-fold decrease of the quality factor. Single-electron tunneling through an excited state of the CNT quantum dot also changes the average charge on the quantum dot, bringing about a decrease in the resonance frequency. In the Fabry-Pérot regime, the absence of charge quantization results in a spring behaviour without resonance frequency dips, which could be used, for example, to probe the transition from quantized to continuous charge with a nanomechanical resonator.

preprint2012arXiv

Quantum Dots at Room Temperature carved out from Few-Layer Graphene

We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to be in the 1 nm range. The large addition energies allow for Coulomb blockade at room temperature, with possible application to single-electron devices.

preprint2012arXiv

Room-temperature gating of molecular junctions using few-layer graphene nanogap electrodes

We report on a method to fabricate and measure gateable molecular junctions which are stable at room temperature. The devices are made by depositing molecules inside a few-layer graphene nanogap, formed by feedback controlled electroburning. The gaps have separations on the order of 1-2 nm as estimated from a Simmons model for tunneling. The molecular junctions display gateable IV-characteristics at room temperature.

preprint2012arXiv

Strong and tunable mode coupling in carbon nanotube resonators

The non-linear interaction between two mechanical resonances of the same freely suspended carbon nanotube resonator is studied. We find that in the Coulomb blockade regime, the non-linear modal interaction is dominated by single-electron-tunneling processes, and that the mode-coupling parameter can be tuned with the gate voltage, allowing both mode softening and mode stiffening behavior. This is in striking contrast to tension-induced mode coupling in strings, where the coupling parameter is positive and gives rise to a stiffening of the mode. The strength of the mode coupling in carbon nanotubes in the Coulomb blockade regime is observed to be six orders of magnitude larger than the mechanical mode coupling in micromechanical resonators.

preprint2011arXiv

Charge Transport in a Zn-Porphyrin single molecule junction

We have investigated charge transport in ZnTPPdT-Pyr molecular junctions using the lithographic MCBJ technique at room temperature and cryogenic temperature (6K). We combined low-bias statistical measurements with spectroscopy of the molecular levels using I(V) characteristics. This combination allows us to characterize the transport in a molecular junction in detail. This complex molecule can form different junction configurations, which is observed in trace histograms and in current-voltage (I(V)) measurements. Both methods show that multiple stable single-molecule junction configurations can be obtained by modulating the inter-electrode distance. In addition we demonstrate that different ZnTPPdT-Pyr junction configurations can lead to completely different spectroscopic features with the same conductance values. We show that statistical low-bias conductance measurements should be interpreted with care, and that the combination with I(V) spectroscopy represents an essential tool for a more detailed characterization of the charge transport in a single molecule.

preprint2011arXiv

Influence of chemical structure on the stability and the conductance of porphyrin single-molecule junctions

Porphyrin molecules can form stable single molecule junctions without anchoring groups. Adding thiol end groups and pyridine axial groups yields more stable junctions with an increased spread in low-bias conductance. This is a result of different bridging geometries during breaking, the stability of which is demonstrated in time-dependent conductance measurements. This is in strong contrast with rod like molecules which show one preferential binding geometry.

preprint2011arXiv

Mechanical systems in the quantum regime

Mechanical systems are ideal candidates for studying quantumbehavior of macroscopic objects. To this end, a mechanical resonator has to be cooled to its ground state and its position has to be measured with great accuracy. Currently, various routes to reach these goals are being explored. In this review, we discuss different techniques for sensitive position detection and we give an overview of the cooling techniques that are being employed. The latter include sideband cooling and active feedback cooling. The basic concepts that are important when measuring on mechanical systems with high accuracy and/or at very low temperatures, such as thermal and quantum noise, linear response theory, and backaction, are explained. From this, the quantum limit on linear position detection is obtained and the sensitivities that have been achieved in recent opto and nanoelectromechanical experiments are compared to this limit. The mechanical resonators that are used in the experiments range from meter-sized gravitational wave detectors to nanomechanical systems that can only be read out using mesoscopic devices such as single-electron transistors or superconducting quantum interference devices. A special class of nanomechanical systems are bottom-up fabricated carbon-based devices, which have very high frequencies and yet a large zero-point motion, making them ideal for reaching the quantum regime. The mechanics of some of the different mechanical systems at the nanoscale is studied. We conclude this review with an outlook of how state-of-the-art mechanical resonators can be improved to study quantum {\it mechanics}.

preprint2010arXiv

An All-Electric Single-Molecule Motor

Many types of molecular motors have been proposed and synthesized in recent years, displaying different kinds of motion, and fueled by different driving forces such as light, heat, or chemical reactions. We propose a new type of molecular motor based on electric field actuation and electric current detection of the rotational motion of a molecular dipole embedded in a three-terminal single-molecule device. The key aspect of this all-electronic design is the conjugated backbone of the molecule, which simultaneously provides the potential landscape of the rotor orientation and a real-time measure of that orientation through the modulation of the conductivity. Using quantum chemistry calculations, we show that this approach provides full control over the speed and continuity of motion, thereby combining electrical and mechanical control at the molecular level over a wide range of temperatures. Moreover, chemistry can be used to change all key parameters of the device, enabling a variety of new experiments on molecular motors.

preprint2010arXiv

Electric Field Controlled Magnetic Anisotropy in a Single Molecule

We have measured quantum transport through an individual Fe$_4$ single-molecule magnet embedded in a three-terminal device geometry. The characteristic zero-field splittings of adjacent charge states and their magnetic field evolution are observed in inelastic tunneling spectroscopy. We demonstrate that the molecule retains its magnetic properties, and moreover, that the magnetic anisotropy is significantly enhanced by reversible electron addition / subtraction controlled with the gate voltage. Single-molecule magnetism can thus be electrically controlled.

preprint2010arXiv

Electroluminescence spectra in weakly coupled single-molecule junctions

We have combined ab initio quantum chemistry calculations with a rate-equation formalism to analyze electroluminescence spectra in single-molecule junctions, measured recently by several groups in Scanning Tunneling Microscope setups. In our method, the entire vibrational spectrum is taken into account. Our method leads to good quantitative agreement with both the spectroscopic features of the measurements and their current and voltage dependence. Moreover, our method is able to explain several previously unexplained features. We show that in general, the quantum yield is expected to be suppressed at high bias, as is observed in one of the measurements. Additionally, we comment on the influence of the vibrational relaxation times on several features of the spectrum.

preprint2010arXiv

Mechanical stiffening, bistability, and bit operations in a microcantilever

We investigate the nonlinear dynamics of microcantilevers. We demonstrate mechanical stiffening of the frequency response at large amplitudes, originating from the geometric nonlinearity. At strong driving the cantilever amplitude is bistable. We map the bistable regime as a function of drive frequency and amplitude, and suggest several applications for the bistable microcantilever, of which a mechanical memory is demonstrated.

preprint2010arXiv

Vibrational Excitations in Weakly Coupled Single-Molecule Junctions: A Computational Analysis

In bulk systems, molecules are routinely identified by their vibrational spectrum using Raman or infrared spectroscopy. In recent years, vibrational excitation lines have been observed in low-temperature conductance measurements on single molecule junctions and they can provide a similar means of identification. We present a method to efficiently calculate these excitation lines in weakly coupled, gateable single-molecule junctions, using a combination of ab initio density functional theory and rate equations. Our method takes transitions from excited to excited vibrational state into account by evaluating the Franck-Condon factors for an arbitrary number of vibrational quanta, and is therefore able to predict qualitatively different behaviour from calculations limited to transitions from ground state to excited vibrational state. We find that the vibrational spectrum is sensitive to the molecular contact geometry and the charge state, and that it is generally necessary to take more than one vibrational quantum into account. Quantitative comparison to previously reported measurements on pi-conjugated molecules reveals that our method is able to characterize the vibrational excitations and can be used to identify single molecules in a junction. The method is computationally feasible on commodity hardware.

preprint2009arXiv

Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model.

preprint2008arXiv

Nanomechanical properties of few-layer graphene membranes

We have measured the mechanical properties of few-layer graphene and graphite flakes that are suspended over circular holes. The spatial profile of the flake's spring constant is measured with an atomic force microscope. The bending rigidity of and the tension in the membranes are extracted by fitting a continuum model to the data. For flakes down to eight graphene layers, both parameters show a strong thickness-dependence. We predict fundamental resonance frequencies of these nanodrums in the GHz range based on the measured bending rigidity and tension.