BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Gary A. Steele

Gary A. Steele appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.supr-conphysics.app-phphysics.ins-detphysics.optics

Catalog footprint

What is connected

44works
7topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

44 published item(s)

preprint2022arXiv

Superconducting electro-mechanics to test Diósi-Penrose effects of general relativity in massive superpositions

Attempting to reconcile general relativity with quantum mechanics is one of the great undertakings of contemporary physics. Here we present how the incompatibility between the two theories arises in the simple thought experiment of preparing a heavy object in a quantum superposition. Following Penrose's analysis of the problem, we determine the requirements on physical parameters to perform experiments where both theories potentially interplay. We use these requirements to compare different systems, focusing on mechanical oscillators which can be coupled to superconducting circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Current detection using a Josephson parametric upconverter

We present the design, measurement and analysis of a current sensor based on a process of Josephson parametric upconversion in a superconducting microwave cavity. Terminating a coplanar waveguide with a nanobridge constriction Josephson junction, we observe modulation sidebands from the cavity that enable highly sensitive, frequency-multiplexed output of small currents for applications such as transition-edge sensor array readout. We derive an analytical model to reproduce the measurements over a wide range of bias currents, detunings and input powers. Tuning the frequency of the cavity by more than \SI{100}{\mega\hertz} with DC current, our device achieves a minimum current sensitivity of \SI{8.9}{\pico\ampere\per\sqrt{\hertz}}. Extrapolating the results of our analytical model, we predict an improved device based on our platform, capable of achieving sensitivities down to \SI{50}{\femto\ampere\per\sqrt{\hertz}}}, or even lower if one could take advantage of parametric amplification in the Josephson cavity. Taking advantage of the Josephson architecture, our approach can provide higher sensitivity than kinetic inductance designs, and potentially enables detection of currents ultimately limited by quantum noise.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Flux-mediated optomechanics with a transmon qubit in the single-photon ultrastrong-coupling regime

We propose a scheme for controlling a radio-frequency mechanical resonator at the quantum level using a superconducting qubit. The mechanical part of the circuit consists of a suspended micrometer-long beam that is embedded in the loop of a superconducting quantum interference device (SQUID) and is connected in parallel to a transmon qubit. Using realistic parameters from recent experiments with similar devices, we show that this configuration can enable a tuneable optomechanical interaction in the single-photon ultrastrong-coupling regime, where the radiation-pressure coupling strength is larger than both the transmon decay rate and the mechanical frequency. We investigate the dynamics of the driven system for a range of coupling strengths and find an optimum regime for ground-state cooling, consistent with previous theoretical investigations considering linear cavities. Furthermore, we numerically demonstrate a protocol for generating hybrid discrete- and continuous-variable entanglement as well as mechanical Schrödinger cat states, which can be realised within the current state of the art. Our results demonstrate the possibility of controlling the mechanical motion of massive objects using superconducting qubits at the single-photon level and could enable applications in hybrid quantum technologies as well as fundamental tests of quantum mechanics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optomechanical microwave amplification without mechanical amplification

High-gain and low-noise signal amplification is a valuable tool in various cryogenic microwave experiments. A microwave optomechanical device, in which a vibrating capacitor modulates the frequency of a microwave cavity, is one technique that is able to amplify microwave signals with high gain and large dynamical range. Such optomechanical amplifiers typically rely on strong backaction of microwave photons on the mechanical mode achieved in the sideband-resolved limit of optomechanics. Here, we observe microwave amplification in an optomechanical cavity in the extremely unresolved sideband limit. A large gain is observed for any detuning of the single pump tone within the cavity linewidth, a clear indication that the amplification is not induced by dynamical backaction. By being able to amplify for any detuning of the pump signal, the amplification center frequency can be tuned over the entire range of the broad cavity linewidth. Additionally, by providing microwave amplification without mechanical amplification, we predict that using this scheme it is possible to achieve near-quantum-limited microwave amplification despite a large thermal occupation of the mechanical mode.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

QuCAT: Quantum Circuit Analyzer Tool in Python

Quantum circuits constructed from Josephson junctions and superconducting electronics are key to many quantum computing and quantum optics applications. Designing these circuits involves calculating the Hamiltonian describing their quantum behavior. Here we present QuCAT, or "Quantum Circuit Analyzer Tool", an open-source framework to help in this task. This open-source Python library features an intuitive graphical or programmatical interface to create circuits, the ability to compute their Hamiltonian, and a set of complimentary functionalities such as calculating dissipation rates or visualizing current flow in the circuit.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Cavity electromechanics with parametric mechanical driving

Microwave optomechanical circuits have been demonstrated in the past years to be extremely powerfool tools for both, exploring fundamental physics of macroscopic mechanical oscillators as well as being promising candidates for novel on-chip quantum limited microwave devices. In most experiments so far, the mechanical oscillator is either used as a passive device element and its displacement is detected using the superconducting cavity or manipulated by intracavity fields. Here, we explore the possibility to directly and parametrically manipulate the mechanical nanobeam resonator of a cavity electromechanical system, which provides additional functionality to the toolbox of microwave optomechanical devices. In addition to using the cavity as an interferometer to detect parametrically modulated mechanical displacement and squeezed thermomechanical motion, we demonstrate that parametric modulation of the nanobeam resonance frequency can realize a phase-sensitive parametric amplifier for intracavity microwave photons. In contrast to many other microwave amplification schemes using electromechanical circuits, the presented technique allows for simultaneous cooling of the mechanical element, which potentially enables this type of optomechanical microwave amplifier to be quantum-limited.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunneling spectroscopy of localized states of $\mathrm{WS}_2$ barriers in vertical van der Waals heterostructures

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here, we study localized states in $\mathrm{WS}_2$ and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/$\mathrm{WS}_2$/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Enhanced superconductivity in atomically thin TaS2

The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Folded MoS2 layers with reduced interlayer coupling

We study molybdenum disulfide (MoS2) structures generated by folding single- and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence emission yield. We additionally find that folded single-layer MoS2 structures show a contribution to photoluminescence spectra of both neutral and charged excitons, which is a characteristic feature of single-layer MoS2 that has not been observed in multilayer MoS2. The results presented here open the door to fabrication of multilayered MoS2 samples with high optical absorption while maintaining the advantageous enhanced photoluminescence emission of single-layer MoS2 by controllably twisting the MoS2 layers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2) - molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 uA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Broadband architecture for galvanically accessible superconducting microwave resonators

In many hybrid quantum systems, a superconducting circuit is required that combines DC-control with a coplanar waveguide (CPW) microwave resonator. The strategy thus far for applying a DC voltage or current bias to microwave resonators has been to apply the bias through a symmetry point in such a way that it appears as an open circuit for certain frequencies. Here, we introduce a microwave coupler for superconducting CPW cavities in the form of a large shunt capacitance to ground. Such a coupler acts as a broadband mirror for microwaves while providing galvanic connection to the center conductor of the resonator. We demonstrate this approach with a two-port $λ/4$-transmission resonator with linewidths in the MHz regime ($Q\sim10^3$) that shows no spurious resonances and apply a voltage bias up to $80$ V without affecting the quality factor of the resonator. This resonator coupling architecture, which is simple to engineer, fabricate and analyse, could have many potential applications in experiments involving superconducting hybrid circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Environmental instability of few-layer black phosphorus

We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of moisture from air. We find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes. Interestingly, flakes can be etched down to single layer (phosphorene) thicknesses. BP's strong affinity for water greatly modifies the performance of fabricated field-effect transistors (FETs) measured in ambient conditions. Upon exposure to air, we differentiate between two timescales for doping of BP FET transfer characterisitcs: a short timescale (minutes) in which a shift in the threshold voltage occurs due to physisorbed oxygen and nitrogen, and a long timescale (hours) in which p-type doping occurs from water absorption. Continuous measurements of BP FETs in air reveal eventual degradation and break-down of the channel material after several days due to the layer-by-layer etching process.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High-Q Tantalum Oxide Nanomechanical Resonators by Laser-Oxidation of TaSe2

Controlling the strain in two-dimensional materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by laser-oxidation of nano-drumhead resonators made out of tantalum diselenide (TaSe2), a layered 2D material belonging to the metal dichalcogenides. Prior to the study of their mechanical properties with a laser interferometer, we checked the oxidation and crystallinity of the freely-suspended tantalum oxide in a high-resolution electron microscope. We show that the stress of tantalum oxide resonators increase by 140 MPa (with respect to pristine TaSe2 resonators) which causes an enhancement of quality factor (14 times larger) and resonance frequency (9 times larger) of these resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large cooperativity and microkelvin cooling with a three-dimensional optomechanical cavity

In cavity optomechanics, light is used to control mechanical motion. A central goal of the field is achieving single-photon strong coupling, which would enable the creation of quantum superposition states of motion. Reaching this limit requires significant improvements in optomechanical coupling and cavity coherence. Here we introduce an optomechanical architecture consisting of a silicon nitride membrane coupled to a three-dimensional superconducting microwave cavity. Exploiting their large quality factors, we achieve an optomechanical cooperativity of 146,000 and perform sideband cooling of the kilohertz-frequency membrane motion to 34$\pm$5 $μ$K, the lowest mechanical mode temperature reported to date. The achieved cooling is limited only by classical noise of the signal generator, and should extend deep into the ground state with superconducting filters. Our results suggest that this realization of optomechanics has the potential to reach the regimes of ultra-large cooperativity and single-photon strong coupling, opening up a new generation of experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mechanical manipulation and exfoliation of boron nitride flakes by micro-plowing with an AFM tip

We demonstrate a simple method to manipulate and exfoliate thick hexagonal boron nitride (h-BN) flakes using an atomic force microscope (AFM) cantilever and tip mounted to a micromanipulator stage. Thick flakes of tens to hundreds of nanometers can be thinned down to large area, few-layer and monolayer flakes. We characterize the resulting thinned-down flakes using AFM and Raman spectroscopy. This technique is extendable to other two dimensional, van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mechanics of freely-suspended ultrathin layered materials

The study of atomically thin two-dimensional materials is a young and rapidly growing field. In the past years, a great advance in the study of the remarkable electrical and optical properties of 2D materials fabricated by exfoliation of bulk layered materials has been achieved. Due to the extraordinary mechanical properties of these atomically thin materials, they also hold a great promise for future applications such as flexible electronics. For example, this family of materials can sustain very large deformations without breaking. Due to the combination of small dimensions, high Young's modulus and high crystallinity of 2D materials, they have attracted the attention of the field of nanomechanical systems as high frequency and high quality factor resonators. In this article, we review experiments on static and dynamic response of 2D materials. We provide an overview and comparison of the mechanics of different materials, and highlight the unique properties of these thin crystalline layers. We conclude with an outlook of the mechanics of 2D materials and future research directions such as the coupling of the mechanical deformation to their electronic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Negative nonlinear damping of a graphene mechanical resonator

We experimentally investigate the nonlinear response of a multilayer graphene resonator using a superconducting microwave cavity to detect its motion. The radiation pressure force is used to drive the mechanical resonator in an optomechanically induced transparency configuration. By varying the amplitudes of drive and probe tones, the mechanical resonator can be brought into a nonlinear limit. Using the calibration of the optomechanical coupling, we quantify the mechanical Duffing nonlinearity. By increasing the drive force, we observe a decrease in the mechanical dissipation rate at large amplitudes, suggesting a negative nonlinear damping mechanism in the graphene resonator. Increasing the optomechanical backaction, we observe a nonlinear regime not described by a Duffing response that includes new instabilities of the mechanical response.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of decoherence in a carbon nanotube mechanical resonator

In physical systems, decoherence can arise from both dissipative and dephasing processes. In mechanical resonators, the driven frequency response measures a combination of both, while time domain techniques such as ringdown measurements can separate the two. Here, we report the first observation of the mechanical ringdown of a carbon nanotube mechanical resonator. Comparing the mechanical quality factor obtained from frequency- and time-domain measurements, we find a spectral quality factor four times smaller than that measured in ringdown, demonstrating dephasing-induced decoherence of the nanomechanical motion. This decoherence is seen to arise at high driving amplitudes, pointing to a non-linear dephasing mechanism. Our results highlight the importance of time-domain techniques for understanding dissipation in nano-mechanical resonators, and the relevance of decoherence mechanisms in nanotube mechanics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optomechanical response of a non-linear mechanical resonator

We investigate theoretically in detail the non-linear effects in the response of an optical/microwave cavity coupled to a Duffing mechanical resonator. The cavity is driven by a laser at a red or blue mechanical subband, and a probe laser measures the reflection close to the cavity resonance. Under these conditions, we find that the cavity exhibits optomechanically induced reflection (OMIR) or absorption (OMIA) and investigate the optomechanical response in the limit of non-linear driving of the mechanics. Similar to linear mechanical drive, an overcoupled cavity the red-sideband drive may lead to both OMIA and OMIR depending on the strength of the drive, whereas the blue-sideband drive only leads to OMIR. The dynamics of the phase of the mechanical resonator leads to the difference between the shapes of the response of the cavity and the amplitude response of the driven Duffing oscillator, for example, at weak red-sideband drive the OMIA dip has no inflection point. We also verify that mechanical non-linearities beyond Duffing model have little effect on the size of the OMIA dip though they affect the width of the dip.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photocurrent generation with two-dimensional van der Waals semiconductors

Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10\%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

Deterministic transfer of two-dimensional crystals constitutes a crucial step towards the fabrication of heterostructures based on artificial stacking of two-dimensional materials. Moreover, control on the positioning of two-dimensional crystals facilitates their integration in complex devices, which enables the exploration of novel applications and the discovery of new phenomena in these materials. Up to date, deterministic transfer methods rely on the use of sacrificial polymer layers and wet chemistry to some extent. Here, we develop an all-dry transfer method that relies on viscoelastic stamps and does not employ any wet chemistry step. This is found very advantageous to freely suspend these materials as there are no capillary forces involved in the process. Moreover, the whole fabrication process is quick, efficient, clean, and it can be performed with high yield.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors

Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm2/V s and current ON/OFF ratio larger than 103. Upon illumination, the black phosphorus transistors show response to excitation wavelengths from the visible up to 940 nm and rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W and it could be drastically enhanced by engineering a detector based on a PN junction. The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetection across the visible and near-infrared part of the electromagnetic spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Identifying signatures of photothermal current in a double-gated semiconducting nanotube

The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here, we present scanning photocurrent microscopy measurements on a double-gated suspended semiconducting SWNT and show that both photovoltaic and photothermal mechanisms are relevant for the interpretation of the photocurrent. We find that the dominant or non-dominant character of one or the other processes depends on the doping profile, and that the magnitude of each contribution is strongly influenced by the series resistance from the band alignment with the metal contacts. These results provide new insight into the interpretation of features in scanning photocurrent microscopy and lay the foundation for the understanding of optoelectronic devices made from SWNTs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Isolation and characterization of few-layer black phosphorus

Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Raman spectroscopy and transmission electron microscopy in a fast and reliable way. Moreover, we demonstrate that the exfoliated flakes are highly crystalline and that they are stable even in free-standing form through Raman spectroscopy and transmission electron microscopy measurements. A strong thickness dependence of the band structure is found by density functional theory calculations. The exciton binding energy, within an effective mass approximation, is also calculated for different number of layers. Our computational results for the optical gap are consistent with preliminary photoluminescence results on thin flakes. Finally, we study the environmental stability of black phosphorus flakes finding that the flakes are very hydrophilic and that long term exposure to air moisture etches black phosphorus away. Nonetheless, we demonstrate that the aging of the flakes is slow enough to allow fabrication of field-effect transistors with strong ambipolar behavior. Density functional theory calculations also give us insight into the water-induced changes of the structural and electronic properties of black phosphorus.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Molybdenum-Rhenium alloy based high-$Q$ superconducting microwave resonators

Superconducting microwave resonators (SMR) with high quality factors have become an important technology in a wide range of applications. Molybdenum-Rhenium (MoRe) is a disordered superconducting alloy with a noble surface chemistry and a relatively high transition temperature. These properties make it attractive for SMR applications, but characterization of MoRe SMR has not yet been reported. Here, we present the fabrication and characterization of SMR fabricated with a MoRe 60-40 alloy. At low drive powers, we observe internal quality-factors as high as 700,000. Temperature and power dependence of the internal quality-factors suggest the presence of the two level systems from the dielectric substrate dominating the internal loss at low temperatures. We further test the compatibility of these resonators with high temperature processes such as for carbon nanotube CVD growth, and their performance in the magnetic field, an important characterization for hybrid systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms: the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of two larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by e.g. an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizeable thermal gradient upon illumination.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN junction, typically defined by ionic dopants in a semiconductor. In atomically thin semiconductors, the doping level can be controlled by the field-effect without need of implanting dopants in the lattice, which makes 2D semiconductors prospective materials to implement electrically tunable PN junctions. However, most 2D semiconducting materials do not show ambipolar P-type and N-type field-effect transport, necessary to realize PN junctions. Few-layer black phosphorus is a recently isolated 2D semiconductor that presents a direct bandgap, high mobility, current on/off ratio and ambipolar operation. Here, we fabricate few-layer black phosphorus (b-P) field-effect transistors with split bottom gates and crystalline hexagonal boron nitride (h-BN) dielectric. We demonstrate electrostatic control of the local charge carrier type and density above each gate in the device, tuning its electrical behaviour from metallic to rectifying. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltage, which we attribute to the separation of electron-hole pairs driven by the internal electric field at the junction region. Due to the small bandgap of the material, we observe photocurrents and photovoltages for illumination wavelengths up to 940 nm, attractive for energy harvesting applications in the near-infrared region

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Single-layer MoS2 mechanical resonators

Here, we demonstrate the fabrication of single-layer MoS2 mechanical resonators. The fabricated resonators have fundamental resonance frequencies in the order of 10 MHz to 30 MHz (depending on their geometry) and their quality factor is about ~55 at room temperature in vacuum. The dynamical properties clearly indicate that monolayer MoS2 membranes are in the membrane limit (i.e., tension dominated), in contrast to their thicker counterparts, which behave as plates. We also demonstrate clear signatures of nonlinear behaviour of our atomically thin membranes, thus providing a starting point for future investigations on the nonlinear dynamics of monolayer nanomechanical resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination, the TiS3 NR-FETs present an ultrahigh photoresponse of 2910 A/W and fast rise/fall times of ~4 ms. In addition, we measure cutoff frequencies (f3dB) up to 1000 Hz. The strong combination of ultrahigh sensitivity all along the visible spectrum and fast time response of TiS3 nanoribbon transistors put them among the best nanoscale photodetectors to date.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large and tunable photo-thermoelectric effect in single-layer MoS2

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photo-thermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that, by an external electric field, can be tuned between -4x10^2 uV/K and -1x10^5 uV/K. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Local strain engineering in atomically thin MoS2

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2

We quantitatively study the Raman and photoluminescence (PL) emission from single layer molybdenum disulfide (MoS2) on dielectric (SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film) and conducting substrates (Au and few-layer graphene). We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the A1g Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoS2-based vertical heterostructures and represent the first step in ad-hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Carbon nanotubes: Nonlinear high-Q resonators with strong coupling to single-electron tunneling

Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. We begin by describing several methods to detect the flexural motion of a CNT resonator. Next, we illustrate how single-electron tunneling in quantum dot CNT resonators leads to sharp dips in the mechanical resonance frequency and significant damping. We discuss four different contributions to the nonlinear oscillation of a CNT resonator: beam-like mechanical nonlinearity, nonlinearity due to gate-induced mechanical tension, electrostatic nonlinearity, and nonlinearity due to single-electron tunneling, and provide quantitative estimates of their strengths. Finally, we show how the large response of the resonance frequency of a CNT resonator to a change in gate voltage or tension makes CNT resonators ideally suited for parametric excitation and for studying the coupling between different mechanical modes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Elastic properties of freely suspended MoS2 nanosheets

We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of these nanosheets is extremely high (E = 0.33 TPa), comparable to that of graphene oxide, and the deflections are reversible up to tens of nanometers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

Single-layer MoS2 is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS2 is an indirect bandgap semiconductor similar to silicon, with a gap of 1.2 eV, and therefore deterministic preparation of single MoS2 layers is a crucial step towards exploiting the large direct bandgap of monolayer MoS2 in electronic, optoelectronic, and photovoltaic applications. Although mechanical and chemical exfoliation methods can be used to obtain high quality MoS2 single-layers, the lack of control in the thickness, shape, size, and position of the flakes limits their usefulness. Here we present a technique for controllably thinning multilayered MoS2 down to a single-layer two-dimensional crystal using a laser. We generate single layers in arbitrary shapes and patterns with feature sizes down to 200 nm, and show that the resulting two-dimensional crystals have optical and electronic properties comparable to that of pristine exfoliated MoS2 single layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mechanical properties of freely suspended atomically thin dielectric layers of mica

We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young's modulus is high (190 GPa), in agreement with the bulk value, which indicates that the exfoliation procedure employed to fabricate these nanolayers does not introduce a noticeable amount of defects. Additionally, ultrathin mica shows low pre-strain and can withstand reversible deformations up to tens of nanometers without breaking. The low pre-tension and high Young's modulus and breaking force found in these ultrathin mica layers demonstrates their prospective use as a complement for graphene in applications requiring flexible insulating materials or as reinforcement in nanocomposites.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

We fabricate freely suspended nanosheets of MoS2 which are characterized by quantitative optical microscopy and high resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young's modulus and the initial pre-tension of the nanosheets are determined by performing a nanoscopic version of a bending test experiment. MoS2 sheets show high elasticity and an extremely high Young's modulus (0.30 TPa, 50% larger than steel). These results make them a potential alternative to graphene in applications requiring flexible semiconductor materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing the charge of a quantum dot with a nanomechanical resonator

We have used the mechanical motion of a carbon nanotube (CNT) as a probe of the average charge on a quantum dot. Variations of the resonance frequency and the quality factor are determined by the change in average charge on the quantum dot during a mechanical oscillation. The average charge, in turn, is influenced by the gate voltage, the bias voltage, and the tunnel rates of the barriers to the leads. At bias voltages that exceed the broadening due to tunnel coupling, the resonance frequency and quality factor show a double dip as a function of gate voltage. We find that increasing the current flowing through the CNT at the Coulomb peak does not increase the damping, but in fact decreases damping. Using a model with energy-dependent tunnel rates, we obtain quantitative agreement between the experimental observations and the model. We theoretically compare different contributions to the single-electron induced nonlinearity, and show that only one term is significant for both the Duffing parameter and the mode coupling parameter. We also present additional measurements which support the model we develop: Tuning the tunnel barriers of the quantum dot to the leads gives a 200-fold decrease of the quality factor. Single-electron tunneling through an excited state of the CNT quantum dot also changes the average charge on the quantum dot, bringing about a decrease in the resonance frequency. In the Fabry-Pérot regime, the absence of charge quantization results in a spring behaviour without resonance frequency dips, which could be used, for example, to probe the transition from quantized to continuous charge with a nanomechanical resonator.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strong and tunable mode coupling in carbon nanotube resonators

The non-linear interaction between two mechanical resonances of the same freely suspended carbon nanotube resonator is studied. We find that in the Coulomb blockade regime, the non-linear modal interaction is dominated by single-electron-tunneling processes, and that the mode-coupling parameter can be tuned with the gate voltage, allowing both mode softening and mode stiffening behavior. This is in striking contrast to tension-induced mode coupling in strings, where the coupling parameter is positive and gives rise to a stiffening of the mode. The strength of the mode coupling in carbon nanotubes in the Coulomb blockade regime is observed to be six orders of magnitude larger than the mechanical mode coupling in micromechanical resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Valley-spin blockade and spin resonance in carbon nanotubes

Manipulation and readout of spin qubits in quantum dots made in III-V materials successfully rely on Pauli blockade that forbids transitions between spin-triplet and spin-singlet states. Quantum dots in group IV materials have the advantage of avoiding decoherence from the hyperfine interaction by purifying them with only zero-spin nuclei. Complications of group IV materials arise from the valley degeneracies in the electronic bandstructure. These lead to complicated multiplet states even for two-electron quantum dots thereby significantly weakening the selection rules for Pauli blockade. Only recently have spin qubits been realized in silicon devices where the valley degeneracy is lifted by strain and spatial confinement. In carbon nanotubes Pauli blockade can be observed by lifting valley degeneracy through disorder. In clean nanotubes, quantum dots have to be made ultra-small to obtain a large energy difference between the relevant multiplet states. Here we report on low-disorder nanotubes and demonstrate Pauli blockade based on both valley and spin selection rules. We exploit the bandgap of the nanotube to obtain a large level spacing and thereby a robust blockade. Single-electron spin resonance is detected using the blockade.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I-V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior.

0 citations0 reviewsNo code linkedOpen access