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Benhu Zhou

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Published work

3 published item(s)

preprint2026arXiv

Electric-Field Modulated Optical Transitions in Monolayer CrI3 and Its Nanoribbons

The successful synthesis of few-layer CrI3 has opened new avenues for research in two-dimensional magnetic materials. Owing to its simple crystal structure and excellent physical properties, layered CrI3 has been extensively studied in magneto-optical effects, excitons, tunneling transport, and novel memory devices. However, the most current theoretical studies rely heavily on the first-principles calculations, and a general analytical theoretical framework, particularly for electric-field modulation and transport properties, is still lacking. In this work, using a 28-band tight-binding model combined with linear response theory, we systematically investigate the optoelectronic response for monolayer CrI3 and its nanoribbons. The results demonstrate that: (1) a vertical electric field can selectively close the band gap of one spin channel while the other remains insulating, resulting a transition to an half-metallic state; (2) the electric field dynamically shifts the optical transition peaks, providing a theoretical basis for extracting band parameters from experimental photoconductivity spectra; (3) nanoribbons with different edge morphologies exhibit distinct edge-state distributions and electronic properties, indicating that optical transition can be dynamically modualted through edge design. The theoretical model developed in this study, which can describe external electric field effect, offers an efficient and flexible approach for analytically investigating the CrI3 family and related materials. This model overcomes the limitations of first-principles methods and provides a solid foundation for designing spintronic and optoelectronic devices controlled by electric fields and edge effect.

preprint2011arXiv

Dependence of transport on adatom location for armchair-edge graphene nanoribbons

We study the transport property for armchair-edge graphene nanoribbons (AGNRs) with an adatom coupling to a semi-infinite quantum wire. Using the nonequilibrium Green's function approach with tight-binding approximation, we demonstrate that the tunneling current through the system is sensitively dependent on both the AGNR width and adatom location. Interestingly, when the adatom locates onto a carbon atom in the 3$j$th chain from the edge of a metallic AGNR, the system shows a transmission gap accompanied by a threshold voltage in $I-V$ curve like a semiconducting AGNR. This effect may be useful in scanning tunneling microscopy experimental characterization on graphene samples.

preprint2011arXiv

Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads

We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Green's function (NGF) technique, it is demonstrated that, the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresistance (TMR) around zero bias voltage possesses a pronounced plateau structure for system with semiconducting 7-AGNR or metallic 8-AGNR in the absence of exchange splitting, but this plateau structure for 8-AGNR system is remarkably broader than that for 7-AGNR one. Interestingly, the increase of exchange splitting $Δ$ suppresses the amplitude of the structure for 7-AGNR system. However, the TMR is enhanced much for 8-AGNR system under the bias amplitude comparable to splitting strength. Further, the current-induced spin transfer torque (STT) for 7-AGNR system is systematically larger than that for 8-AGNR one. The findings here suggest the design of GNR-based spintronic devices by using a metallic AGNR, but it is more favorable to fabricate a current-controlled magnetic memory element by using a semiconducting AGNR.