BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Xianbo Xiao

Xianbo Xiao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hall

Catalog footprint

What is connected

9works
1topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2015arXiv

All-electric spin transistor based on a side-gate-modulated two-dimensional topological insulator

We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and allelectric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a paramagnetic material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anisotropic Quantum Confinement Effect and Electric Control of Surface States in Dirac Semimetal Nanostructures

The recent discovery of Dirac semimetals represents a new achievement in our fundamental understanding of topological states of matter. Due to their topological surface states, high mobility, and exotic properties associated with bulk Dirac points, these new materials have attracted significant attention and are believed to hold great promise for fabricating novel topological devices. For nanoscale device applications, effects from finite size usually play an important role. In this report, we theoretically investigate the electronic properties of Dirac semimetal nanostructures. Quantum confinement generally opens a bulk band gap at the Dirac points. We find that confinement along different directions shows strong anisotropiceffects. In particular, the gap due to confinement along vertical c-axis shows a periodic modulation, which is absent for confinement along horizontal directions. We demonstrate that the topological surface states could be controlled by lateral electrostatic gating. It is possible to generate Rashba-like spin splitting for the surface states and to shift them relative to the confinement-induced bulk gap. These results will not only facilitate our fundamental understanding of Dirac semimetal nanostructures, but also provide useful guidance for designing all-electrical topological spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field (MF) by adopting the developed Usuki transfer-matrix method in combination with the Landauer-Buttiker formalism. Wide spin filtering energy windows can be achieved in this system for a spin-unpolarized injection. In addition, both the width of these energy windows and the magnitude of the spin conductance within these energy widows can be tuned by varying the Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and the spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of the QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin polarization direction switch based on an asymmetrical quantum wire

A scheme for a spin polarization direction switch is investigated by studying the spin-dependent electron transport of an asymmetrical quantum wire (QW) with Rashba spin-orbit coupling (SOC). It is found that the magnitude of the spin-polarized current in the backward biased case is equal to it in the forward biased case but their signs are contrary. This results indicate that the spin polarization direction can be switched by changing the direction of the external current. The physical mechanism of this device may arise from the symmetries in the longitudinal and transverse directions are broken but $C_2$-rotation and time-reversal symmetries are still reserved. Further studies show that the spin polarization is robust against disorder, displaying the feasibility of the proposed structure for a potential application.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-dependent electron transport in a Rashba quantum wire with rough edges

We investigate theoretically the spin-dependent electron transport in a Rashba quantum wire with rough edges. The charge and spin conductances are calculated as function of the electron energy or the wire length by adopting the spinresolved lattice Green function method. For a single disordered Rashba wire, it is found that the charge conductance quantization is destroyed by the edge disorder. However, a nonzero spin conductance can be generated and its amplitude can be manipulated by the wire length, which is attributed to the broken structure symmetries and the spin-dependent quantum interference induced by the rough boundaries. For a large ensemble of disordered Rashba wires, the average charge conductance decreases monotonically, however, the average spin conductance increases to a maximum value and then decreases, with increasing wire length. Further study shows that the influence of the rough edges on the charge and spin conductances can be eliminated by applying a perpendicular magnetic field to the wire. In addition, a very large magnitude of the spin conductance can be achieved when the electron energy lies between the two thresholds of each pair of subbands. These findings may not only benefit to further apprehend the transport properties of the Rashba low-dimensional systems but also provide some theoretical instructions to the application of spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-filtering and charge- and spin-switching effects in a quantum wire with periodically attached stubs

Spin-dependent electron transport in a periodically stubbed quantum wire in the presence of Rashba spin-orbit interaction (SOI) is studied via the nonequilibrium Green's function method combined with the Landauer-Buttiker formalism. The coexistence of spin filtering, charge and spin switching are found in the considered system. The mechanism of these transport properties is revealed by analyzing the total charge density and spin-polarized density distributions in the stubbed quantum wire. Furthermore, periodic spin-density islands with high polarization are also found inside the stubs, owing to the interaction between the charge density islands and the Rashba SOI-induced effective magnetic field. The proposed nanostructure may be utilized to devise an all-electrical multifunctional spintronic device.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-polarized current separator based on a fork-shaped Rashba nanostructure

A scheme for a spin-polarized current separator is proposed by studying the spin-dependent electron transport of a fork-shaped nanostructure with Rashba spin-orbit coupling (SOC), connected to three leads with the same width. It is found that two spin-polarized currents are of the same magnitude but opposite polarizations can be generated simultaneously in the two output leads when the spin-unpolarized electrons injected from the input lead. The underlying physics is revealed to originate from the different spin-dependent conductance caused by the effects of Rashba SOC and the geometrical structure of the system. Further study shows that the spin-polarized current with strong a robustness against disorder, demonstrates the feasibility of the proposed nanostructure for a real application.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin Filtering in a Nonuniform Quantum Wire with Rashba Spin-Orbit Interaction

We investigate theoretically the spin-polarized electron transport for a wide-narrow-wide (WNW) quantum wire under the modulation of Rashba spin-orbit interaction (SOI). The influence of both the structure of the quantum wire and the interference between different pairs of subbands on the spin-polarized electron transport is taken into account simultaneously via the spin-resolved lattice Green function method. It is found that a very large vertical spin-polarized current can be generated by the SOI-induced effective magnetic field at the structure-induced Fano resonance even in the presence of strong disorder. Furthermore, the magnitude of the spin polarization can be tuned by both the Rashba SOI strength and structural parameters. Our results may provide an effective way to design a spin filter device without containing any magnetic materials or applying a magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin polarization control by electric means: proposal for a spin diode

A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when electrons transmit from the narrow lead to the wide lead, however, it vanishes or becomes very weak when the transport direction is reversed. This difference is revealed to arise from the different local density of electron states of the quantum wire, which is dependent on the direction of bias. The spin-polarized current in the proposed structure can be generated and manipulated by purely electric means and with strong a robustness against disorder, displaying the feasibility of this structure for a real application.

0 citations0 reviewsNo code linkedOpen access