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E. H. Hwang

E. H. Hwang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.str-elcond-mat.quant-gascond-mat.supr-conhep-thquant-ph

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Published work

52 published item(s)

preprint2020arXiv

Impurity scattering induced carrier transport in twisted bilayer graphene

We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resistivity, and in general, the resistivity increases (decreases) with increasing temperature (carrier density). Inclusion of the van Hove singularity in the theory leads to a strong increase in the resistivity at higher densities, where the chemical potential is close to a van Hove singularity, leading to an apparent density-dependent plateau type structure in the resistivity, which has been observed in recent transport experiments. We also show that the Matthissen's rule is strongly violated in twisted bilayer graphene at low twist angles.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Collective modes in multi-Weyl semimetals

We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., $E\sim \sqrt{ k_{\parallel}^{2J} + k_z^2}$, where $k_{\parallel}$ and $k_z$ are wave vectors and $J$ is a positive integer). For comparison, we also consider the gapless semimetals with the isotropic band dispersions (i.e., $E\sim k^J$). We calculate analytically long-wavelength plasma frequencies incorporating interband transitions and chiral properties of carriers. For both the isotropic and anisotropic cases, we find that interband transitions and chirality lead to the depolarization shift of plasma frequencies. For the isotropic parabolic band dispersion (i.e., $N=2$, $E\sim k^2$), the long-wavelength plasma frequencies lie outside the single particle excitation regions for all carrier densities, and thus the plasmons do not decay via Landau damping. For the higher-order band dispersions ($N \ge 3$) the long-wavelength plasmons experience damping below a critical density. For systems with the anisotropic dispersion the density dependence of the long-wavelength plasma frequency along the direction of non-linear dispersion behaves like that of the isotropic linear band model ($N=1$), while along the direction of linear dispersion it behaves like that of the isotropic non-linear model ($N \ge 2$). Plasmons along both directions remain undamped over a broad range of densities due to the chirality induced depolarization shift. Our results provide a comprehensive picture of how band dispersion and chirality affect plasmon behaviors in 3D gapless chiral systems with the arbitrary band dispersion.

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preprint2016arXiv

Stacking dependence of carrier-interactions in multilayer graphene systems

We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena of the momentum-direction dependent intersite phases determined by the stacking sequence. Using this method, we calculate and compare the self-energies, density--density response functions, collective modes, and ground-state energies of several different few layer graphene systems. The influence of electron--electron interactions on important electronic properties can be understood in terms of competition between intraband exchange, interband exchange and correlation contributions that vary systematically with stacking arrangement.

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preprint2015arXiv

Charge transport in gapless chiral electron systems with arbitrary band dispersion

Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from random quenched impurities in the background. We obtain the dependence of the Boltzmann conductivity on carrier density and temperature for arbitrary band dispersion in arbitrary dimensionality assuming long-range ($\sim 1/r$) Coulomb disorder and zero-range white noise disorder [$\sim δ(r)$]. We establish that the temperature and the density dependence of the Boltzmann conductivity manifests scaling behaviors determining respectively the intrinsic semimetallic or the extrinsic metallic property of the gapless system. Our results apply equally well to both chiral and non-chiral gapless systems, and provide a qualitative understanding of the dependence of the Boltzmann conductivity on the band dispersion in arbitrary dimensionality.

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preprint2015arXiv

Screening and transport in 2D semiconductor systems at low temperatures

Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects and not from phonon scattering) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder (i.e., high-mobility) 2D samples and also why some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover where the system reverses the sign of the temperature derivative of the 2D resistivity at high temperatures.

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preprint2015arXiv

Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility ($\sim 18$ m$^2$/Vs) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using RPA screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The 2D metal-insulator transition as a strong localization induced crossover phenomenon

Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. dρ/dT changes its sign at some nonuniversal sample-dependent critical carrier density n_c separating an effective 2D metal (dρ/dT >0) for n>n_c from an effective 2D insulator (dρ/dT<0) for n<n_c. We study the 2D MIT phenomenon as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, k_F l=1. Calculating the quantum mean free path (l) in the effective metallic phase from a realistic transport theory including disorder scattering effects, we solve the integral equation defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density n_c as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the n_c is the temperature and density dependence of the Coulomb disorder. Our calculated results for the crossover n_c appear to be in qualitative and semi-quantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We provide some results for graphene where a low-temperature 2D MIT becomes possible in the presence of intervalley scattering. We also provide an extensive comparison with the theoretical results obtained on the basis of 2D MIT being considered as a percolation transition.

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preprint2015arXiv

Transport in two-dimensional modulation doped semiconductor structures

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultra high-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultra-pure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Carrier screening, transport, and relaxation in 3D Dirac semimetals

A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$) and the doped extrinsic ("low-temperature", $T \ll T_F$) limit with analytical scaling properties for the carrier conductivity obtained in both regimes, where $T_F$ is the Fermi temperature corresponding to the doped free carrier density (electrons or holes). The scaling properties describing how the conductivity depends on the density and temperature can be used to establish the Dirac nature of 3D systems through transport measurements. We also consider the temperature dependent conductivity limited by the acoustic phonon scattering in 3D Dirac materials. In addition, we theoretically calculate and compare the single particle relaxation time $\tas$, defining the quantum level broadening, and the transport scattering time $\tat$, defining the conductivity, in the presence of screened charged impurity scattering. A critical quantitative analysis of the $\tat/\tas$ results for 3D Dirac materials in the presence of long-range screened Coulomb disorder is provided.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effective field theory, three-loop perturbative expansion, and their experimental implications in graphene many-body effects

Many-body electron-electron interaction effects are theoretically considered in monolayer graphene from a continuum effective field-theoretic perspective by going beyond the standard leading-order perturbative renormalization group (RG) analysis. Given that the bare fine structure constant in graphene is of order unity, which is neither small to justify a perturbative expansion nor large enough for strong-coupling theories to be applicable, the problem is a difficult one, with some similarity to 2+1-dimensional strong-coupling quantum electrodynamics (QED). In this work, we take a systematic and comprehensive analytical approach, working primarily at the Dirac point (intrinsic graphene), by going up to three loops in the diagrammatic expansion to both ascertain the validity of perturbation theory and to estimate quantitatively higher-order renormalization effects. While no direct signatures for non-Fermi liquid behavior at the Dirac point have yet been observed experimentally, there is ample evidence for the interaction-induced renormalization of the graphene velocity as the carrier density approaches zero. We provide a critical comparison between theory and experiment, using both bare- and screened-interaction (RPA) calculations. We find that while the one-loop RG analysis gives reasonable agreement with the experimental data, especially when screening and finite-density effects are included through the RPA, the two-loop analysis reveals a strong-coupling critical point in suspended graphene, signifying either a quantum phase transition or a breakdown of the weak-coupling RG approach. We show that the latter is more likely by adapting Dyson's argument for the breakdown of perturbative QED to the case of graphene. We propose future experiments and theoretical directions to make further progress on this important and difficult problem.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling

We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron and electron-surface optical (SO) phonon interactions. In this calculation the leading order dynamic screening approximation (G$_0$W approximation) is used to obtain the quasiparticle self-energy by treating electrons and phonons on an equal footing. We find that the strong coupling between the SO phonon and plasmon leads to a new decay channel for the quasiparticle through the emission of the coupled mode, and gives rise to an abrupt increase in the scattering rate, which is absent in the uncoupled system. In monolayer graphene a single jump in the scattering rate occurs, arising from the emission of the low energy branch of the coupled plasmon-phonon modes. In bilayer graphene the emission of both low and high energy branches of the coupled modes contributes to the scattering rate and gives rise to two abrupt changes in the scattering rate. The jumps in the scattering rate can be potentially used in the hot electron device such as switching devices and oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mobility versus quality in 2D semiconductor structures

We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or universal indicator of the sample quality in high-mobility modulation-doped 2D GaAs structures because, depending on the specific system property of interest, mobility and quality may be controlled by different aspects of the underlying disorder distribution, particularly since these systems are dominated by long-range Coulomb disorder from both near and far random quenched charged impurities. We show that in the presence of both channel and remote charged impurity scattering, which is a generic situation in modulation-doped high-mobility 2D carrier systems, it is quite possible for higher (lower) mobility structures to have lower (higher) quality as measured by the disorder-induced single-particle level broadening. In particular, we establish that there is no reason to expect a unique relationship between mobility and quality in 2D semiconductor structures as both are independent functionals of the disorder distribution, and are therefore, in principle, independent of each other. Using a simple, but reasonably realistic, ``2-impurity'' minimal model of the disorder distribution, we provide concrete examples of situations where higher (lower) mobilities correspond to lower (higher) sample qualities. We discuss experimental implications of our theoretical results and comment on possible strategies for future improvement of 2D sample quality.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Short-range disorder effects on electronic transport in 2D semiconductor structures

We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor systems. We give results for unscreened and screened short-range disorder effects on 2D mobility in quantum wells and heterostructures, comparing with the results for Coulomb disorder and finding that the asymptotic high-density mobility is always limited by short-range disorder which, in general, becomes effectively stronger with increasing `carrier density' in contrast to Coulomb disorder. We also predict an intriguing re-entrant metal-insulator transition at very high carrier densities in Si-MOSFETs driven by the short-range disorder associated with surface roughness scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Signatures of localization in the effective metallic regime of high mobility Si MOSFETs

Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the effect of logarithmic insulating localization correction to the metallic temperature dependence in the 2D conductivity so as to distinguish between the 2D MIT being a true quantum phase transition versus being a finite-temperature crossover. We use the Boltzmann theory of resistivity including the temperature dependent screening effect on charged impurities in the system to fit the data. We analyze weak perpendicluar field magnetoresistance data taken in the vicinity of the transition and show that they are consistent with weak localization behavior in the strongly disordered regime $k_F\ell\gtrsim1$. Therefore we supplement the Botzmann transport theory with a logarithmic in temperature quantum weak localization correction and analyze the competition of the insulating temperature dependence of this correction with the metallic temperature dependence of the Boltzmann conductivity. Using this minimal theoretical model we find that the logarithmic insulating correction is masked by the metallic temperature dependence of the Botzmann resistivity and therefore the insulating $\log T$ behavior may be apparent only at very low temperatures which are often beyond the range of temperatures accessible experimentally. Analyzing the low-$T$ experimental Si MOSFET transport data we identify signatures of the putative insulating behavior at low temperature and density in the effective metallic phase.

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preprint2013arXiv

Density dependent electrical conductivity in suspended graphene: Approaching the Dirac point in transport

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of accessing the Dirac point using transport studies in high-quality suspended graphene. We show that the temperature dependence of graphene conductivity around the charge neutrality point provides information about how close the system can approach the Dirac point although competition between long-range and short-range disorder as well as between diffusive and ballistic transport may considerably complicate the picture. We also find that acoustic phonon scattering contribution to the graphene resistivity is always relevant at the Dirac point in contrast to higher density situations where the acoustic phonon contribution to the resistivity is strongly suppressed at the low temperature Bloch-Grüneisen regime. We provide detailed numerical results for temperature and density dependent conductivity for suspended graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Surface polar optical phonon interaction induced many-body effects and hot-electron relaxation in graphene

We theoretically study various aspects of the electron-surface optical phonon interaction effects in graphene on a substrate made of polar materials. We calculate the electron self-energy in the presence of the surface phonon-mediated electron-electron interaction focusing on how the linear chiral graphene dispersion is renormalized by the surface phonons. The electron self-energy as well as the quasiparticle spectral function in graphene are calculated, taking into account electron-polar optical phonon interaction by using a many body perturbative formalism. The scattering rate of free electrons due to polar interaction with surface optical phonons in a dielectric substrate is calculated as a function of the electron energy, temperatures, and carrier density. Effects of screening on the self-energy and scattering rate are discussed. Our theory provides a comprehensive quantitative (and qualitative) picture for surface phonon interaction induced many-body effects and hot electron relaxation in Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon

We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the inhomogeneous density landscape created by the long-range potential fluctuations induced by random quenched charged impurities in the environment. The long-range Coulomb disorder inherent in semiconductors produces strong potential fluctuations in the 2D system where a fraction of the carriers gets trapped or classically localized, leading to a mixed 2-component semiclassical transport behavior at intermediate densities where a fraction of the carriers is mobile and another fraction immobile. At high carrier density, all the carriers are essentially mobile whereas at low carrier density all the carriers are essentially trapped since there is no possible percolating transport path through the lake-and-mountain inhomogeneous potential landscape. The low-density situation with no percolation would mimic an insulator whereas the high-density situation with allowed percolating paths through the lake-and-mountain energy landscape would mimic a metal with the system manifesting an apparent MIT in between. We calculate the transport properties as a function of carrier density, impurity density, impurity location, and temperature using a 2-component (trapped and mobile carriers) effective medium theory. Our theoretically calculated transport properties are in good qualitative agreement with the experimentally observed 2D MIT phenomenology in 2D electron and hole systems. We find a high (low) density metallic (insulating) temperature-dependence of the 2D resistivity, and an intermediate-density crossover behavior which could be identified with the experimentally observed 2D MIT.

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preprint2013arXiv

Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems

We theoretically consider the carrier density dependence of low-temperature electrical conductivity in high-quality and low-disorder two-dimensional (2D) `metallic' electronic systems such as 2D GaAs electron or hole quantum wells or gated graphene. Taking into account resistive scattering by Coulomb disorder arising from quenched random charged impurities in the environment, we show that the 2D conductivity σ(n) varies as σ~ n^{β(n)} as a function of the 2D carrier density n where the exponent β(n) is a smooth, but non-monotonic, function of density with possible nontrivial extrema. In particular, the density scaling exponent β(n) depends qualitatively on whether the Coulomb disorder arises primarily from remote or background charged impurities or short-range disorder, and can, in principle, be used to characterize the nature of the dominant background disorder. A specific important prediction of the theory is that for resistive scattering by remote charged impurities, the exponent βcan reach a value as large as 2.7 for k_F d ~ 1, where k_F ~\sqrt{n} is the 2D Fermi wave vector and d is the separation of the remote impurities from the 2D layer. Such an exponent β(>5/2) is surprising because unscreened Coulomb scattering by remote impurities gives a limiting theoretical scaling exponent of β= 5/2, and naively one would expect β(n) \le 5/2 for all densities since unscreened Coulomb scattering should nominally be the situation bounding the resistive scattering from above. We find numerically and show theoretically that the maximum value of α(β), the mobility (conductivity) exponent, for 2D semiconductor quantum wells is around 1.7 (2.7) for all values of d (and for both electrons and holes) with the maximum αoccurring around k_F d ~ 1. We discuss experimental scenarios for the verification of our theory.

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preprint2013arXiv

Velocity renormalization and anomalous quasiparticle dispersion in extrinsic graphene

Using many-body diagrammatic perturbation theory we consider carrier density- and substrate-dependent many-body renormalization of doped or gated graphene induced by Coulombic electron-electron interaction effects. We quantitatively calculate the many-body spectral function, the renormalized quasiparticle energy dispersion, and the renormalized graphene velocity using the leading-order self-energy in the dynamically screened Coulomb interaction within the ring diagram approximation. We predict experimentally detectable many-body signatures, which are enhanced as the carrier density and the substrate dielectric constant are reduced, finding an intriguing instability in the graphene excitation spectrum at low wave vectors where interaction completely destroys all particle-like features of the noninteracting linear dispersion. We also make experimentally relevant quantitative predictions about the carrier density and wave-vector dependence of graphene velocity renormalization induced by electron-electron interaction. We compare on-shell and off-shell self-energy approximations within the ring diagram approximation, finding a substantial quantitative difference between their predicted velocity renormalization corrections in spite of the generally weak-coupling nature of interaction in graphene.

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preprint2012arXiv

2D transport and screening in topological insulator surface states

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged disorder in the environment result in electron and hole puddles that dominate the electronic properties of these materials. By calculating the polarizability of the surface state using the random phase approximation, and determining the characteristics of puddles using the self-consistent approximation, we find that band asymmetry plays a crucial role in determining experimentally measured quantities including the conductivity and the puddle autocorrelation length.

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preprint2012arXiv

Comparison of microscopic models for disorder in bilayer graphene: Implications for the density of states and the optical conductivity

We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged scatterers and screened Coulomb impurities, using both the Born approximation and self-consistent Born approximation for the self-energy. We also include a finite interlayer potential asymmetry which generates a gap between the valence and conduction bands. We find that the qualitative behavior of the two scattering potentials are similar, but that the choice of approximation for the self-energy leads to important differences near the band edge in the gapped case. Finally, we describe how these differences manifest in the measurement of the band gap in optical and transport experimental techniques.

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preprint2012arXiv

Disorder by order in graphene

We predict the existence of an intriguing "disorder by order" phenomenon in graphene transport where higher quality (and thus more ordered) samples, while having higher mobility at high carrier density, will manifest more strongly insulating (and thus effectively more disordered) behavior as the carrier density is lowered compared with lower quality samples (with higher disorder) which exhibit an approximate resistivity saturation phenomenon at low carrier density near the Dirac point. This predicted behavior simulating a metal-insulator transition, which we believe to have recently been observed in an experiment at Manchester University [L. A. Ponomarenko et al., Nat. Phys. 7, 958 (2011)], arises from the suppression of Coulomb disorder induced inhomogeneous puddles near the charge neutrality point in high quality graphene samples.

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preprint2012arXiv

Effect of charged impurity correlation on transport in monolayer and bilayer graphene

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling of the graphene conductivity can be naturally explained as arising from impurity correlation effects in the Coulomb disorder, with no need to assume the presence of short-range scattering centers in addition to charged impurities. We find that also in bilayer graphene correlations among impurities induce a crossover of the scaling of the conductivity at higher carrier densities. We show that in the presence of correlation among charged impurities the conductivity depends nonlinearly on the impurity density $n_i$ and can even increase with $n_i$.

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preprint2012arXiv

Electronic transport in two dimensional Si:P $δ$-doped layers

We investigate theoretically 2D electronic transport in Si:P $δ$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows qualitatively different behavior from that of the well-studied 2D Si-MOSFETs where the carrier density is independent of the impurity density. We find that the density dependent mobility of the Si:P system shows non-monotonic behavior which is exactly opposite of the non-monotonicity observed in Si-MOSFETs --- in the Si:P system the mobility first decreases with increasing density and then it increases slowly with increasing density above a typical density $10^{14}$ cm$^{-2}$ (in contrast to Si MOSFETs where the mobility typically increases with density first and then slowly decreases at high density as surface roughness scattering dominates). In the low density limit (or strong screening limit) mobility decreases inversely with increasing density, but in the high density limit (or weak screening limit) it slowly increases due to the finite width effects of the 2D layer. In the intermediate density regime ($1/a < 2 k_F < q_{TF}$, where $a$, $k_F$, and $q_{TF}$ are the confinement width of the $δ$-layer, Fermi wave vector, and Thomas-Fermi screening wave vector, respectively) the density dependent mobility is approximately a constant at the minimum value. However, the calculated mean free path increase monotonically with density. We also compare the transport scattering time relevant to the mobility and the single particle relaxation time relevant the quantum level broadening, finding that the transport scattering time could be much larger than the single-particle scattering time unlike in Si MOSFETs where they are approximately equal.

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preprint2012arXiv

Gate tunable quantum transport in double layer graphene

We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in the additional layer is two-fold: it provides screening of the long-range potential of charged defects in the system, and screens out Coulomb interactions between charge carriers. We find that the efficiency of defect charge screening is strongly dependent on the concentration and location of defects within the DLG. In particular, only a moderate suppression of electron-hole puddles around the Dirac point induced by the high concentration of remote impurities in the silicon oxide substrate could be achieved. A stronger effect is found on the elastic relaxation rate due to charged defects resulting in mobility strongly dependent on the electron denisty in the additional layer of DLG. We find that the quantum interference correction to the resistivity of graphene is also strongly affected by screening in DLG. In particular, the dephasing rate is strongly suppressed by the additional screening that supresses the amplitude of electron-electron interaction and reduces the diffusion time that electrons spend in proximity of each other. The latter effect combined with screening of elastic relaxation rates results in a peculiar gate tunable weak-localization magnetoresistance and quantum correction to resistivity. We propose suitable experiments to test our theory and discuss the possible relevance of our results to exisiting data.

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preprint2012arXiv

Interplay between phonon and impurity scattering in 2D hole transport

We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10 K$<T<$100 K, we estimate the value of the appropriate deformation potential for hole-phonon coupling. Due to the interplay between hole-phonon and hole-impurity scattering the calculated temperature-dependent resistivity shows interesting nonmonotonic behavior. In particular, we find that there is a temperature range (typically 2 K$<T<$10 K) in which the calculated resistivity becomes independent of temperature due to a subtle cancellation between the temperature dependent resistive scattering contributions arising from impurities and phonons. This resistivity saturation regime appears at low carrier densities when the increasing resistivity due to phonon scattering compensates for the decreasing resistivity due to the nondegeneracy effect. This temperature-independent flat resistivity regime is experimentally accessible and may have already been observed in a recent experiment.

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preprint2012arXiv

Polarizability and Screening in Chiral Multilayer Graphene

We calculate the static polarizability of multilayer graphene and study the effect of stacking arrangement, carrier density, and onsite energy difference on graphene screening properties. At low densities, the energy spectrum of multilayer graphene is described by a set of chiral two-dimensional electron systems and the associated chiral nature determines the screening properties of multilayer graphene showing very different behavior depending on whether the chirality index is even or odd. As density increases, the energy spectrum follows that of the monolayer graphene and thus the polarizability approaches that of monolayer graphene. The qualitative dependence of graphene polarizability on chirality and layering indicates the possibility of distinct graphene quantum phases as a function of the chirality index.

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preprint2012arXiv

Valley-dependent 2D transport in Si-MOSFETs

Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where screening effects are important. We show conclusively that, given the same bare Coulomb disorder, the 2D mobility for a given system increases monotonically with increasing valley degeneracy. We also show that the temperature and the parallel magnetic field dependence of the 2D conductivity is strongly enhanced by increasing valley degeneracy. We analytically consider the low temperature limit of 2D transport, particularly its theoretical dependence on valley degeneracy, comparing with our full numerical results and with the available experimental results. We make qualitative and quantitative predictions for the parallel magnetic field induced 2D magnetoresistance in recently fabricated high-mobility 6-valley Si(111)-on-vacuum inversion layers. We also provide a theory for 2D transport in ultrahigh mobility Si(111) structures recently fabricated in the laboratory, discussing the possibility of observing the fractional quantum Hall effect in such Si(111) structures.

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preprint2011arXiv

Chirality-dependent phonon-limited resistivity in multiple layers of graphene

We develop a theory for the temperature and density dependence of phonon-limited resistivity $ρ(T)$ in bilayer and multilayer graphene, and compare with the corresponding monolayer result. For the unscreened case, we find $ρ\approx C T$ with $C \propto v_{\rm F}^{-2}$ in the high-temperature limit, and $ρ\approx A T^4$ with $A \propto v_{\rm F}^{-2} k_{\rm F}^{-3}$ in the low-temperature Bloch-Grüneisen limit, where $v_{\rm F}$ and $k_{\rm F}$ are Fermi velocity and Fermi wavevector, respectively. If screening effects are taken into account, $ρ\approx C T$ in the high-temperature limit with a renormalized $C$ which is a function of the screening length, and $ρ\approx A T^6$ in the low-temperature limit with $A \propto k_{\rm F}^{-5}$ but independent of $v_{\rm F}$. These relations hold in general with $v_{\rm F}$ and a chiral factor in $C$ determined by the specific chiral band structure for a given density.

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preprint2011arXiv

Compressibility of graphene

We develop a theory for the compressibility and quantum capacitance of disordered monolayer and bilayer graphene including the full hyperbolic band structure and band gap in the latter case. We include the effects of disorder in our theory, which are of particular importance at the carrier densities near the Dirac point. We account for this disorder statistically using two different averaging procedures: first via averaging over the density of carriers directly, and then via averaging in the density of states to produce an effective density of carriers. We also compare the results of these two models with experimental data, and to do this we introduce a model for inter-layer screening which predicts the size of the band gap between the low-energy conduction and valence bands for arbitary gate potentials applied to both layers of bilayer graphene. We find that both models for disorder give qualitatively correct results for gapless systems, but when there is a band gap at charge neutrality, the density of states averaging is incorrect and disagrees with the experimental data.

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preprint2011arXiv

Correlations, Plasmarons, and Quantum Spectral Function in Bilayer Graphene

We theoretically study the many-body effects of electron electron interaction on the single particle spectral function of doped bilayer graphene. Using random phase approximation, we calculate the real and imaginary part of the self-energy and hence the spectral function. The spectral function near the Fermi surface shows the usual quasiparticle peak, establishing doped bilayer graphene, in contrast to the unstable neutral system, to be a Fermi liquid. Away from the Fermi surface, an additional broad plasmaron peak is visible in the spectral function. From the low energy behaviour of the self-energy we calculate the quasiparticle residue and the effective mass of the quasiparticles as a function of carrier density. We present results for both the on-shell and the off-shell approximation for the quasiparticle renormalization.

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preprint2011arXiv

Coulomb drag in monolayer and bilayer graphene

We theoretically calculate the interaction-induced frictional Coulomb drag resistivity between two graphene monolayers as well as between two graphene bilayers, which are spatially separated by a distance "$d$". We show that the drag resistivity between graphene monolayers can be significantly affected by the intralayer momentum-relaxation mechanism. For energy independent intralayer scattering, the frictional drag induced by inter-layer electron-electron interaction goes asymptotically as $ρ_D \sim T^2/n^4d^6$ and $ρ_D \sim T^2/n^2d^2$ in the high-density ($k_F d \gg 1$) and low-density ($k_F d \ll 1$) limits, respectively. When long-range charge impurity scattering dominates within the layer, the monolayer drag resistivity behaves as $ρ_D \sim T^2/n^3d^4$ and $T^2 \ln (\sqrt{n} d) /n$ for $k_F d \gg 1$ and $k_F d \ll 1$, respectively. The density dependence of the bilayer drag is calculated to be $ρ_D \propto T^2/n^{3}$ both in the large and small layer separation limit. In the large layer separation limit, the bilayer drag has a strong $1/d^4$ dependence on layer separation, whereas this goes to a weak logarithmic dependence in the strong inter-layer correlation limit of small layer separation. In addition to obtaining the asymptotic analytical formula for Coulomb drag in graphene, we provide numerical results for arbitrary values of density and layer separation interpolating smoothly between our asymptotic theoretical results.

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preprint2011arXiv

Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the graphene conductivity by taking into account the non-mean-field two-component nature of transport in the highly inhomogeneous density and potential landscape, where activated transport across the potential fluctuations in the puddle regimes coexists with regular metallic diffusive transport. The existence of puddles allows the local activation at low carrier densities, giving rise to an insulating temperature dependence in the conductivity of both monolayer and bilayer graphene systems. We also critically study the qualitative similarity and the quantitative difference between monolayer and bilayer graphene transport in the presence of puddles. Our theoretical calculation explains the non-monotonic feature of the temperature dependent transport, which is experimentally generically observed in low mobility graphene samples. We establish the 2-component nature (i.e., both activated and diffusive) of graphene transport arising from the existence of potential fluctuation induced inhomogeneous density puddles. The temperature dependence of the graphene conductivity arises from many competing mechanisms, even without considering any phonon effects, such as thermal excitation of carriers from the valence band to the conduction band, temperature dependent screening, thermal activation across the potential fluctuations associated with the electron-hole puddles induced by the random charged impurities in the environment, leading to very complex temperature dependence which depends both on the carrier density and the temperature range of interest.

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preprint2011arXiv

dmu/dn In suspended bilayer graphene: the interplay of disorder and band gap

We present an interpretation of recent experimental measurements of dmu/dn in suspended bilayer graphene samples. We demonstrate that the data may be quantitatively described by assuming a spatially varying band gap induced by local electric fields. We demonstrate that the gap fluctuations vary amongst different samples and that the gap fluctuations are correlated with the associated charge density fluctuations, indicating that the mechanism causing this effect is likely to be an extrinsic effect. We also provide predictions for the optical conductivity and mobility of suspended bilayer graphene samples with small band gaps.

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preprint2011arXiv

Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environment

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preprint2011arXiv

Optical and transport gaps in gated bilayer graphene

We discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments. By calculating the optical conductivity and density of states using a microscopic model in the presence of disorder, we demonstrate that the gap associated with transport experiments is smaller than that associated with optical experiments. Intrinsic bilayer graphene has an optical conductivity in which the energy of the peaks associated with the interband transition are very robust against disorder and thus provide an estimate of the band gap. In contrast, extraction of the band gap from the optical conductivity of extrinsic bilayer graphene is almost impossible for significant levels of disorder due to the ambiguity of the transition peaks. The density of states contains an upper bound on the gap measured in transport experiments, and disorder has the effect of reducing this gap which explains why these experiments have so far been unable to replicate the large band gaps seen in optical measurements.

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preprint2011arXiv

Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample.

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preprint2011arXiv

Temperature-dependent compressibility in graphene and two-dimensional systems

We calculate the finite temperature compressibility for two-dimensional semiconductor systems, monolayer graphene, and bilayer graphene within the Hartree-Fock approximation. We find that the calculated temperature dependent compressibility including exchange energy is non-monotonic. In 2D systems at low temperatures the inverse compressibility decreases first with increasing temperature, but after reaching a minimum it increases as temperature is raised further. At high enough temperatures the negative compressibility of low density systems induced by the exchange energy becomes positive due to the dominance of the finite temperature kinetic energy. The inverse compressibility in monolayer graphene is always positive and its temperature dependence appears to be reverse of the 2D semiconductor systems, i.e., it increases first with temperature and then decreases at high temperatures. The inverse compressibility of bilayer graphene shows the same non-monotonic behavior as ordinary 2D systems, but at high temperatures it approaches a constant which is smaller than the value of the non-interacting bilayer graphene. We find the leading order temperature correction to the compressibility within Hartree-Fock approximation to be $T^2 \ln T$ at low temperatures for all three systems.

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preprint2011arXiv

Theory of 2D transport in graphene for correlated disorder

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged impurity correlations give rise to a density dependent graphene conductivity, which agrees well qualitatively with the existing experimental data. We also find, quite unexpectedly, that the conductivity could increase with increasing impurity density if there is sufficient inter-impurity correlation present in the system. In particular, the linearity (sublinearity) of graphene conductivity at lower (higher) gate voltage is naturally explained as arising solely from impurity correlation effects in the Coulomb disorder.

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preprint2010arXiv

Collective modes of monolayer, bilayer, and multilayer fermionic dipolar liquid

Motivated by recent experimental advances in creating polar molecular gases in the laboratory, we theoretically investigate the many body effects of two-dimensional dipolar systems with the anisotropic and $1/r^3$ dipole-dipole interactions. We calculate collective modes of 2D dipolar systems, and also consider spatially separated bilayer and multilayer superlattice dipolar systems. We obtain the characteristic features of collective modes in quantum dipolar gases. We quantitatively compare the modes of these dipolar systems with the modes of the extensively studied usual two-dimensional electron systems, where the inter-particle interaction is Coulombic.

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preprint2010arXiv

Conductivity of graphene on boron nitride substrates

We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a direct quantitative estimate of the underlying disorder strength for both short-range and long-range disorder in the graphene on h-BN system. We find that the good interface quality between graphene and h-BN leads to strongly suppressed charged impurity scattering compared with the corresponding SiO$_2$ substrate case, thus producing very high mobility for the graphene on h-BN system.

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preprint2010arXiv

Dynamic Screening and Low Energy Collective Modes in Bilayer Graphene

We theoretically study the dynamic screening properties of bilayer graphene within the random phase approximation assuming quadratic band dispersion and zero gap for the single-particle spectrum. We calculate the frequency dependent dielectric function of the system and obtain the low energy plasmon dispersion and broadening of the plasmon modes from the dielectric function. We also calculate the optical spectral weight (i.e. the dynamical structure factor) for the system. We find that the leading order long wavelength limit of the plasmon dispersion matches with the classical result for 2D electron gas. However, contrary to electron gas systems, the non-local plasmon dispersion corrections decrease the plasmon frequency. The non-local corrections are also different from the single layer graphene. Finally, we also compare our results with the double layer graphene system (i.e. a system of two independent graphene monolayers).

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preprint2010arXiv

Electronic transport in two dimensional graphene

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

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preprint2010arXiv

Insulating behavior in metallic bilayer graphene: Interplay between density inhomogeneity and temperature

We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low mobility bilayer graphene using an analytic statistical theory taking into account the non-mean-field nature of transport in the highly inhomogeneous density and potential landscape. We find that the puddles can induce, even far from the charge neutrality point, a coexisting metallic and insulating transport behavior due to the random local activation gap in the system.

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preprint2010arXiv

Plasmon-phonon coupling in graphene

Collective excitations of coupled electron-phonon systems are calculated for both monolayer and bilayer graphene, taking into account the non-perturbative Coulomb coupling between electronic excitations in graphene and the substrate longitudinal optical phonon modes. We find that the plasmon-phonon coupling in monolayer graphene is strong at all densities, but in bilayer graphene the coupling is significant only at high densities satisfying the resonant condition $ω_{pl} \approx ω_{ph}$. The difference arises from the peculiar screening properties associated with chirality of graphene. Plasmon-phonon coupling explains the measured quasi-linear plasmon dispersion in the long wavelength limit, thus resolving a puzzle in the experimental observations.

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preprint2010arXiv

Two-dimensional surface charge transport in topological insulators

We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy $ε_F$ and transport scattering time $τ$ satisfy $ε_F τ/\hbar \gg 1$, but sufficiently low that $ε_F$ lies below the bottom of the conduction band. Our theory is based on the spin density matrix and takes the quantum Liouville equation as its starting point. The scattering term is determined accurately to linear order in the impurity density. We consider scattering by charged impurities and short-range scatterers such as surface roughness. We calculate also the polarization function in topological insulators, emphasizing the differences from graphene. We find that the main contribution to the conductivity is $\propto n_i^{-1}$, where $n_i$ is the impurity density, and will have different carrier density dependencies for different forms of scattering. Two different contributions to this conductivity are traced to the scalar and spin-dependent terms in the Hamiltonian and their relative weight depends on the doping density. Our results contain all contributions to the conductivity to orders zero and one in the impurity density. We discuss also a way to determine the dominant scattering angles by studying the ratio of the transport relaxation time to the Bloch lifetime as a function of the Wigner-Seitz radius $r_s$. We also discuss the effect on the surface states of adding metallic contacts.

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preprint2009arXiv

Theory of carrier transport in bilayer graphene

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin, establishing that both scattering mechanisms contribute significantly to determining bilayer transport properties. We find that although strong screening properties of bilayer graphene lead to qualitative differences with the corresponding single layer situation, both systems exhibit the linearly density dependent conductivity at high density and the minimum graphene conductivity behavior around the charge neutrality point due to the formation of inhomogeneous electron-hole puddles induced by the random charged impurity centers.

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preprint2007arXiv

Is Graphene a Fermi Liquid?

We answer the question posed in the title above by considering theoretically the electron-electron interaction induced many-body effects in undoped (`intrinsic') and doped (`extrinsic') 2D graphene layers. We find that (1) intrinsic graphene is a marginal Fermi liquid with the imaginary part of the self-energy, ${Im}Σ(ω)$, going as linear in energy $ω$ for small $ω$, implying that the quasiparticle spectral weight vanishes at the Dirac point as $({ln}ω)^{-1}$; and, (2) extrinsic graphene is a well-defined Fermi liquid with ${Im}Σ(ω)\sim ω^2\mathrm{ln}ω$ near the Fermi surface similar to 2D carrier systems with parabolic energy dispersion. We provide analytical and numerical results for quasiparticle renormalization in graphene, concluding that all experimental graphene systems are ordinary 2D Fermi liquids since any doping automatically induces generic Fermi liquid behavior.

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preprint2005arXiv

The so-called two dimensional metal-insulator transition

We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the two-dimensional effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D MIT physics is the long-range bare Coulombic disorder arising from the random distribution of charged impurities in the low-density 2D semiconductor structures.

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preprint2001arXiv

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range.

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preprint1999arXiv

Collective charge density fluctuations in superconducting layered systems with bilayer unit cells

Collective modes of bilayered superconducting superlattices (e.g., YBCO) are investigated within the conserving gauge-invariant ladder diagram approximation including both the nearest interlayer single electron tunneling and the Josephson-type Cooper pair tunneling. By calculating the density-density response function including Coulomb and pairing interactions, we examine the two collective mode branches corresponding to the in-phase and out-of-phase charge fluctuations between the two layers in the unit cell. The out-of-phase collective mode develops a long wavelength plasmon gap whose magnitude depends on the tunneling strength with the mode dispersions being insensitive to the specific tunneling mechanism (i.e., single electron or Josephson). We also show that in the presence of tunneling the oscillator strength of the out-of-phase mode overwhelms that of the in-phase-mode at $k_{\|} = 0$ and finite $k_z$, where $k_z$ and $k_{\|}$ are respectively the mode wave vectors perpendicular and along the layer. We discuss the possible experimental observability of the phase fluctuation modes in the context of our theoretical results for the mode dispersion and spectral weight.

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