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Researcher profile

Hongki Min

Hongki Min contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-concond-mat.str-el

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Published work

6 published item(s)

preprint2022arXiv

Nearly flat bands in twisted triple bilayer graphene

We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $ω$, twist angle $θ$, interlayer potential difference $Δ$, and top-bottom bilayers sliding vector $\boldsymbolτ$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference $Δ$ allows the flattening of bands in t3BG down to $\sim 20$~meV for twist angles $θ\lesssim 2^{\circ}$ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite $Δ$ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth $U/W \gtrsim 1$ ratios in the $θ$ and $Δ$ parameter space. We also present the expected $K$-valley Chern numbers for the lowest-energy nearly flat bands.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Semiclassical magnetotransport including the effects of the Berry curvature and Lorentz force

In topological semimetals and insulators, negative longitudinal magnetoresistance and angle-dependent planar Hall effect have been reported arising from the Berry curvature. Using the Boltzmann transport theory, we present a closed-form expression for the nonequilibrium distribution function which includes both the effects of the Berry curvature and Lorentz force. Using this formulation, we obtain analytical expressions for conductivity and resistivity tensors in Weyl semimetals demonstrating a non-monotonic field dependence arising from the competition between the two effects.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological multiband s-wave superconductivity in coupled multifold fermions

We study three-dimensional time-reversal-invariant topological superconductivity in noncentrosymmetric materials such as RhSi, CoSi, and AlPt which host coupled multifold nodes energetically split by the spin-orbit coupling at the same time-reversal-invariant momentum (TRIM). The topological superconductivity arises from the $s_{+} \oplus s_{-}$ gap function, which is $\boldsymbol{k}$ independent, but with opposite signs for the two nodes split at the same TRIM. We consider various electron-electron interactions in the tight-binding model for RhSi and find that the topological superconducting phase supporting a surface Majorana cone and topological nodal rings is favored in a wide range of interaction parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quasi-One-Dimensional Higher-Order Topological Insulators

Quasi-1D materials Bi$_{4}$X$_{4}$ (X=Br,I) are prototype weak topological insulators (TI) in the $β$ phase. For the $α$ phases, recent high-throughput database screening suggests that Bi$_{4}$Br$_{4}$ is a rare higher-order TI (HOTI) whereas Bi$_{4}$I$_{4}$ has trivial symmetry indicators. Here we show that in fact the two $α$ phases are both pristine HOTIs yet with distinct termination-dependent hinge state patterns by performing first-principles calculations, analyzing coupled-edge dimerizations, inspecting surface lattice structures, constructing tight-binding models, and establishing boundary topological invariants. We reveal that the location of inversion center dictates Bi$_{4}$Br$_{4}$ (Bi$_{4}$I$_{4}$) to feature opposite (the same) dimerizations of a surface or intrinsic (bulk or extrinsic) origin at two side cleavage surfaces. We propose a variety of experiments to examine our predictions. Given the superior hinges along atomic chains, the structural transition at room temperature, and the extreme anisotropies in three axes, our results not only imply the possible existence of many topological materials beyond the scope of symmetry indicators but also establish a new TI paradigm and a unique material platform for exploring the interplay of geometry, symmetry, topology, and interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable quantum interference effect on magnetoconductivity in few-layer black phosphorus

In this study, we develop a systematic weak localization/antilocalization theory fully considering the anisotropy and Berry phase of the system, and apply it to various phases of few-layer black phosphorus (BP), which has a highly anisotropic electronic structure with an electronic gap size tunable even to a negative value. The derivation of a Cooperon ansatz for the Bethe-Salpeter equation in a general anisotropic system is presented, revealing the existence of various quantum interference effects in different phases of few-layer BP, including a crossover from weak localization to antilocalization. We also predict that the magnetoconductivity at the semi-Dirac transition point will exhibit a nontrivial power-law dependence on the magnetic field, while following the conventional logarithmic field-dependence of 2D systems in the insulator and Dirac semimetal phases. Notably, the ratio between the magnetoconductivity and Boltzmann conductivity turns out to be independent of the direction, even in strongly anisotropic systems. Finally, we discuss the tunability of the quantum corrections of few-layer BP in terms of the symmetry class of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effects of Disorder and Internal Dynamics on Vortex Wall Propagation

Experimental measurements of domain wall propagation are typically interpreted by comparison to reduced models that ignore both the effects of disorder and the internal dynamics of the domain wall structure. Using micromagnetic simulations, we study vortex wall propagation in magnetic nanowires induced by fields or currents in the presence of disorder. We show that the disorder leads to increases and decreases in the domain wall velocity depending on the conditions. These results can be understood in terms of an effective damping that increases as disorder increases. As a domain wall moves through disorder, internal degrees of freedom get excited, increasing the energy dissipation rate.

0 citations0 reviewsNo code linkedOpen access