Chirality-dependent phonon-limited resistivity in multiple layers of graphene

preprint2011arXivOpen access

Abstract

We develop a theory for the temperature and density dependence of phonon-limited resistivity ρ(T)ρ(T) in bilayer and multilayer graphene, and compare with the corresponding monolayer result. For the unscreened case, we find ρ≈CTρ\approx C T with C∝vF−2C \propto v_{\rm F}^{-2} in the high-temperature limit, and ρ≈AT4ρ\approx A T^4 with A∝vF−2kF−3A \propto v_{\rm F}^{-2} k_{\rm F}^{-3} in the low-temperature Bloch-Grüneisen limit, where vFv_{\rm F} and kFk_{\rm F} are Fermi velocity and Fermi wavevector, respectively. If screening effects are taken into account, ρ≈CTρ\approx C T in the high-temperature limit with a renormalized CC which is a function of the screening length, and ρ≈AT6ρ\approx A T^6 in the low-temperature limit with A∝kF−5A \propto k_{\rm F}^{-5} but independent of vFv_{\rm F}. These relations hold in general with vFv_{\rm F} and a chiral factor in CC determined by the specific chiral band structure for a given density.

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