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Researcher profile

Qiuzi Li

Qiuzi Li contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gasquant-ph

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Published work

13 published item(s)

preprint2013arXiv

Finite temperature inelastic mean free path and quasiparticle lifetime in graphene

We adopt the GW approximation and random phase approximation to study finite temperature effects on the inelastic mean free path and quasiparticle lifetime by directly calculating the imaginary part of the finite temperature self-energy induced by electron-electron interaction in extrinsic and intrinsic graphene. In particular, we provide the density-dependent leading order temperature correction to the inelastic scattering rate for both single-layer and double-layer graphene systems. We find that the inelastic mean free path is strongly influenced by finite-temperature effects. We present the similarity and the difference between graphene with linear chiral band dispersion and conventional two dimensional electron systems with parabolic band dispersion. We also compare the calculated finite temperature inelastic scattering length with the elastic scattering length due to Coulomb disorder, and comment on the prospects for quantum interference effects showing up in low density graphene transport. We also carry out inelastic scattering calculation for electron-phonon interaction, which by itself gives rather long carrier mean free paths and lifetimes since the deformation potential coupling is weak in graphene, and therefore electron-phonon interaction contributes significantly to the inelastic scattering only at relatively high temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Many-body effects and possible superconductivity in the 2D metallic surface states of 3D topological insulators

We theoretically consider temperature and density-dependent electron-phonon interaction induced many-body effects in the two-dimensional (2D) metallic carriers confined on the surface of the 3D topological insulator (e.g. Bi$_2$Se$_3$). We calculate the temperature and the carrier density dependence of the real and imaginary parts of the electronic self-energy, the interacting spectral function, and the phonon-induced velocity renormalization, enabling us to obtain a simple density and temperature dependent effective dimensionless electron-phonon coupling constant parameter, which increases (decreases) strongly with increasing density (temperature). Our theoretical results can be directly and quantitatively compared with experimental ARPES or STS studies of the 2D spectral function of topological insulator surface carriers. In particular, we predict the possible existence of surface superconductivity in Bi$_2$Se$_3$ induced by strong electron-phonon interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon

We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the inhomogeneous density landscape created by the long-range potential fluctuations induced by random quenched charged impurities in the environment. The long-range Coulomb disorder inherent in semiconductors produces strong potential fluctuations in the 2D system where a fraction of the carriers gets trapped or classically localized, leading to a mixed 2-component semiclassical transport behavior at intermediate densities where a fraction of the carriers is mobile and another fraction immobile. At high carrier density, all the carriers are essentially mobile whereas at low carrier density all the carriers are essentially trapped since there is no possible percolating transport path through the lake-and-mountain inhomogeneous potential landscape. The low-density situation with no percolation would mimic an insulator whereas the high-density situation with allowed percolating paths through the lake-and-mountain energy landscape would mimic a metal with the system manifesting an apparent MIT in between. We calculate the transport properties as a function of carrier density, impurity density, impurity location, and temperature using a 2-component (trapped and mobile carriers) effective medium theory. Our theoretically calculated transport properties are in good qualitative agreement with the experimentally observed 2D MIT phenomenology in 2D electron and hole systems. We find a high (low) density metallic (insulating) temperature-dependence of the 2D resistivity, and an intermediate-density crossover behavior which could be identified with the experimentally observed 2D MIT.

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preprint2012arXiv

Disorder by order in graphene

We predict the existence of an intriguing "disorder by order" phenomenon in graphene transport where higher quality (and thus more ordered) samples, while having higher mobility at high carrier density, will manifest more strongly insulating (and thus effectively more disordered) behavior as the carrier density is lowered compared with lower quality samples (with higher disorder) which exhibit an approximate resistivity saturation phenomenon at low carrier density near the Dirac point. This predicted behavior simulating a metal-insulator transition, which we believe to have recently been observed in an experiment at Manchester University [L. A. Ponomarenko et al., Nat. Phys. 7, 958 (2011)], arises from the suppression of Coulomb disorder induced inhomogeneous puddles near the charge neutrality point in high quality graphene samples.

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preprint2012arXiv

Effect of charged impurity correlation on transport in monolayer and bilayer graphene

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling of the graphene conductivity can be naturally explained as arising from impurity correlation effects in the Coulomb disorder, with no need to assume the presence of short-range scattering centers in addition to charged impurities. We find that also in bilayer graphene correlations among impurities induce a crossover of the scaling of the conductivity at higher carrier densities. We show that in the presence of correlation among charged impurities the conductivity depends nonlinearly on the impurity density $n_i$ and can even increase with $n_i$.

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preprint2012arXiv

Graphene on SrTiO3

We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate graphene transport as the charge neutrality point is approached by lowering the carrier density, and in the higher density regime away from the neutrality point a dual model including both charged impurities and resonant defects gives an excellent description of graphene transport on SrTiO$_3$ substrates. We further establish that the non-universal high-density behavior of $σ(n)$ in different graphene samples on various substrates arises from the competition among different scattering mechanisms, and it is in principle entirely possible for graphene transport to be dominated by qualitatively different scattering mechanisms at high and low carrier densities.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Two-dimensional electronic transport on the surface of 3D topological insulators

We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into account the effects of the strong disorder-induced carrier density inhomogeneities that characterize the ground state of the surface of 3DTIs, especially at low doping, as recently shown experimentally. Due to the inhomogeneous nature of the carrier density landscape, standard theoretical techniques based on ensemble averaging over disorder assuming a spatially uniform average carrier density are inadequate. Moreover the presence of strong spatial potential and density fluctuations greatly enhance the effect of thermally activated processes on the transport properties. The theory presented is able to take into account all the effects due to the disorder-induced inhomogeneities, momentum scattering by disorder, and the effect of electron-phonon scattering processes. As a result the developed theory is able to accurately describe the transport properties of the surfaces of 3DTIs both at zero and finite temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the graphene conductivity by taking into account the non-mean-field two-component nature of transport in the highly inhomogeneous density and potential landscape, where activated transport across the potential fluctuations in the puddle regimes coexists with regular metallic diffusive transport. The existence of puddles allows the local activation at low carrier densities, giving rise to an insulating temperature dependence in the conductivity of both monolayer and bilayer graphene systems. We also critically study the qualitative similarity and the quantitative difference between monolayer and bilayer graphene transport in the presence of puddles. Our theoretical calculation explains the non-monotonic feature of the temperature dependent transport, which is experimentally generically observed in low mobility graphene samples. We establish the 2-component nature (i.e., both activated and diffusive) of graphene transport arising from the existence of potential fluctuation induced inhomogeneous density puddles. The temperature dependence of the graphene conductivity arises from many competing mechanisms, even without considering any phonon effects, such as thermal excitation of carriers from the valence band to the conduction band, temperature dependent screening, thermal activation across the potential fluctuations associated with the electron-hole puddles induced by the random charged impurities in the environment, leading to very complex temperature dependence which depends both on the carrier density and the temperature range of interest.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Temperature-dependent compressibility in graphene and two-dimensional systems

We calculate the finite temperature compressibility for two-dimensional semiconductor systems, monolayer graphene, and bilayer graphene within the Hartree-Fock approximation. We find that the calculated temperature dependent compressibility including exchange energy is non-monotonic. In 2D systems at low temperatures the inverse compressibility decreases first with increasing temperature, but after reaching a minimum it increases as temperature is raised further. At high enough temperatures the negative compressibility of low density systems induced by the exchange energy becomes positive due to the dominance of the finite temperature kinetic energy. The inverse compressibility in monolayer graphene is always positive and its temperature dependence appears to be reverse of the 2D semiconductor systems, i.e., it increases first with temperature and then decreases at high temperatures. The inverse compressibility of bilayer graphene shows the same non-monotonic behavior as ordinary 2D systems, but at high temperatures it approaches a constant which is smaller than the value of the non-interacting bilayer graphene. We find the leading order temperature correction to the compressibility within Hartree-Fock approximation to be $T^2 \ln T$ at low temperatures for all three systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory of 2D transport in graphene for correlated disorder

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged impurity correlations give rise to a density dependent graphene conductivity, which agrees well qualitatively with the existing experimental data. We also find, quite unexpectedly, that the conductivity could increase with increasing impurity density if there is sufficient inter-impurity correlation present in the system. In particular, the linearity (sublinearity) of graphene conductivity at lower (higher) gate voltage is naturally explained as arising solely from impurity correlation effects in the Coulomb disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Collective modes of monolayer, bilayer, and multilayer fermionic dipolar liquid

Motivated by recent experimental advances in creating polar molecular gases in the laboratory, we theoretically investigate the many body effects of two-dimensional dipolar systems with the anisotropic and $1/r^3$ dipole-dipole interactions. We calculate collective modes of 2D dipolar systems, and also consider spatially separated bilayer and multilayer superlattice dipolar systems. We obtain the characteristic features of collective modes in quantum dipolar gases. We quantitatively compare the modes of these dipolar systems with the modes of the extensively studied usual two-dimensional electron systems, where the inter-particle interaction is Coulombic.

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preprint2010arXiv

Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for implementing spin qubits in quantum dots. One scheme uses spin states in a single dot and the interdot exchange coupling controls interactions between unbiased dots. The other scheme employs the singlet and triplet states of a biased double dot as the two-level system making up the qubit and exchange controls the energy splitting of the levels. Exchange in these two configurations depends differently on system parameters. Our work relies on the Heitler-London approximation and the Hund-Mulliken molecular orbital method. The results we obtain enable us to investigate the sensitivity of the system to background charge fluctuations and determine the conditions under which optimal spots, at which the influence of the charge noise is minimized, may exist in Si double quantum dot structures.

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