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Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

preprint2009arXivOpen access
V. LechnerL. E. GolubP. OlbrichS. StachelD. SchuhW. WegscheiderV. V. Bel'kovS. D. Ganichev
cond-mat.mes-hall
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Open access8 authors1 topic
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V. LechnerL. E. GolubP. OlbrichS. StachelD. SchuhW. WegscheiderV. V. Bel'kovS. D. Ganichev

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