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S. D. Ganichev

S. D. Ganichev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phcond-matcond-mat.othercond-mat.str-elphysics.optics

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Published work

47 published item(s)

preprint2022arXiv

Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene

We report on observation of the infrared photoresistance of twisted bilayer graphene under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under variations of temperature and back gate voltage, and exhibits giant resonance-like enhancements at certain gate voltages. The structure of the photoresponse correlates with weaker features in the dark dc resistance reflecting the complex band structure of twisted bilayer graphene. It is shown that the observed photoresistance is well captured by a bolometric model describing the electron and hole gas heating, which implies an ultrafast thermalization of the photoexcited electron-hole pairs in the whole range of studied temperatures and back gate voltages. We establish that photoresistance can serve a highly sensitive probe of the temperature variations of electronic transport in twisted bilayer graphene.

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preprint2022arXiv

THz radiation induced circular Hall effect in graphene

We report on the observation of the circular transversal terahertz photoconductivity in monolayer graphene supplied by a back gate. The photoconductivity response is caused by the free carrier absorption and reverses its sign upon switching the radiation helicity. The observed dc Hall effect manifests the time inversion symmetry breaking induced by circularly polarized terahertz radiation in the absence of a magnetic field. For low gate voltages, the photosignal is found to be proportional to the radiation intensity and can be ascribed to the alignment of electron momenta by the combined action of THz and static electric fields as well as by the dynamic heating and cooling of the electron gas. Strikingly, at high gate voltages, we observe that the linear-in-intensity Hall photoconductivity vanishes; the photoresponse at low intensities becomes superlinear and varies with the square of the radiation intensity. We attribute this behavior to the interplay of the second- and fourth-order effects in the radiation electric field which has not been addressed theoretically so far and requires additional studies.

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preprint2022arXiv

THz ratchet effect in HgTe interdigitated structures

The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, sweeping the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Edge photocurrent in bilayer graphene due to inter-Landau-level transitions

We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures.

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preprint2020arXiv

Edge photocurrent driven by THz electric field in bi-layer graphene

We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in the polarization dependence. Increasing the magnetic field strength, the current starts to exhibit 1/B-magnetooscillations with a period consistent with that of the Shubnikov-de-Haas effect and amplitude by an order of magnitude larger as compared to the current at zero magnetic field measured under the same conditions. The microscopic theory developed shows that the current is formed in the edges vicinity limited by the mean-free path of carriers and the screening length of the high-frequency electric field. The current originates from the alignment of the free carrier momenta and dynamic accumulation of charge at the edges, where the P-symmetry is naturally broken. The observed magnetooscillations of the photocurrent are attributed to the formation of Landau levels.

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preprint2020arXiv

Giant ratchet magneto-photocurrent in graphene lateral superlattices

We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.

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preprint2020arXiv

Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz-laser radiation with a spot smaller than the film area. This eliminates the near-field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.

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preprint2020arXiv

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.

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preprint2019arXiv

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime

We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation.

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preprint2015arXiv

Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film

We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band.

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preprint2015arXiv

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state.

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preprint2015arXiv

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal

We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic DC current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of terahertz radiation. We show that the collective plasmon modes of the planar plasmonic crystal become strongly noncentrosymmetric in the weak coupling regime of their anticrossing. Large plasmon wavevector (which is typically by two-three orders of magnitude greater than the terahertz photon wavevector) along with strong near-field enhancement at the plasmon resonance make the plasmonic drag a much stronger effect compared to the photon drag observed in conventional two-dimensional electron systems.

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preprint2015arXiv

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Terahertz ratchet effects in graphene with a lateral superlattice

Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.

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preprint2014arXiv

Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.

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preprint2013arXiv

Cyclotron-resonance-assisted photon drag effect in InSb/InAlSb quantum wells excited by terahertz radiation

We report on the observation of the cyclotron-resonance-assisted photon drag effect. Resonant photocurrent is detected in InSb/InAlSb quantum wells structures subjected to a static magnetic field and excited by terahertz radiation at oblique incidence. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experimental findings. We show that the resonant photocurrent originates from the transfer of photon momentum to free electrons drastically enhanced at cyclotron resonance.

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preprint2013arXiv

Giant spin-polarized current in a Dirac fermion system at cyclotron resonance

We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and sweeping magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical gating. The photocurent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, give an evidence that the enhancement of the photocurrent is caused by cyclotron resonance in a Dirac fermion system. The developed theory shows that the current is spin polarized and originates from the spin dependent scattering of charge carriers heated by the radiation.

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preprint2013arXiv

High frequency electric field induced nonlinear effects in graphene (review)

The nonlinear optical and optoelectronic properties of graphene with the emphasis on the processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects as well as generation of photocurrents due to coherent interference effects, are reviewed. The article presents the state-of-the-art of this subject, including both recent advances and well-established results. Various physical mechanisms controlling transport are described in depth including phenomenological description based on symmetry arguments, models visualizing physics of nonlinear responses, and microscopic theory of individual effects.

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preprint2013arXiv

Interplay of Rashba/Dresselhaus spin splittings

The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two dimensional systems made of III-V, wurtzite and SiGe. We discuss the symmetry aspects of the linear and cubic in electron wavevector spin splitting in heterostructures prepared on (001)-, (110)-, (111)-, (113)-, (112)-, and (013)-oriented substrates and address the requirements for suppression of spin relaxation and realization of the persistent spin helix state. In experimental part of the paper we overview experimental results on the interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy: the method based on the phenomenological equivalence of the linear-in-wavevector spin splitting and several photogalvanic phenomena.

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preprint2013arXiv

Magnetic quantum ratchet effect in Si-MOSFETs

We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic field. The current rises linearly with the magnetic field strength and quadratically with the ac electric field amplitude. It depends on the polarization state of the ac field and can be induced by both linearly and circularly polarized radiation. We present the quasi-classical and quantum theories of the observed effect and show that the current originates from the Lorentz force acting upon carriers in asymmetric inversion channels of the transistors.

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preprint2012arXiv

Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.

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preprint2012arXiv

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.

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preprint2011arXiv

Classical ratchet effects in heterostructures with a lateral periodic potential

We study terahertz radiation induced ratchet currents in low dimensional semiconductor structures with a superimposed one-dimensional lateral periodic potential. The periodic potential is produced by etching a grating into the sample surface or depositing metal stripes periodically on the sample top. Microscopically, the photocurrent generation is based on the combined action of the lateral periodic potential, verified by transport measurements, and the in-plane modulated pumping caused by the lateral superlattice. We show that a substantial part of the total current is caused by the polarization-independent Seebeck ratchet effect. In addition, polarization-dependent photocurrents occur, which we interpret in terms of their underlying microscopical mechanisms. As a result, the class of ratchet systems needs to be extended by linear and circular ratchets, sensitive to linear and circular polarizations of the driving electro-magnetic force.

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preprint2011arXiv

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.

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preprint2011arXiv

Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO$_2$-laser

We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular $ac$ Hall effect and the circular photogalvanic effect. Studying the frequency dependence of the current in graphene layers grown on the SiC substrate we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC.

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preprint2011arXiv

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures

We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelength is studied. We show that at moderate magnetic fields the photocurrent exhibits a typical linear field dependence. At high magnetic fields, however, it becomes nonlinear and inverses its sign. The experimental results are analyzed in terms of the microscopic models based on asymmetric relaxation of carriers in the momentum space. We demonstrate that the observed nonlinearity of the photocurrent is caused by the large Zeeman spin splitting in InSb/AlInSb structures and an interplay of the spin-related and spin-independent roots of the magnetogyrotropic photogalvanic effect.

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preprint2011arXiv

Terahertz radiation driven chiral edge currents in graphene

We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.

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preprint2010arXiv

Circular ac Hall Effect

We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency.

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preprint2010arXiv

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

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preprint2010arXiv

Photon helicity driven electric currents in graphene

We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed.

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preprint2010arXiv

Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures

We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.

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preprint2010arXiv

Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.

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preprint2010arXiv

Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs

We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.

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preprint2009arXiv

Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures

We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-doping layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs.

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preprint2009arXiv

Nonlinear magneto-gyrotropic photogalvanic effect

We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.

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preprint2009arXiv

Orbital photogalvanic effects in quantum-confined structures

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

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preprint2009arXiv

Spin currents in diluted magnetic semiconductors (extended version)

Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances drastically the conversion due to the spin-dependent scattering by localized Mn(2+) ions and the giant Zeeman splitting.

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preprint2009arXiv

Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

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preprint2008arXiv

Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential

We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor heterostructures with one-dimensional lateral periodic potential. The potential is produced by etching a grating into the sample surface. The electric current response is well described by phenomenological theory including both the circular and linear photogalvanic effects. Experimental data demonstrate that the inversion asymmetry of the periodic lateral pattern can be varied by means of electron beam lithography to produce classical lateral ratchets. A novel microscopical mechanism for the polarization-dependent photogalvanic effects has been proposed to interpret the experimental findings. The photocurrent generation is based on the combined action of the lateral periodic potential and the modulated in-plane pumping. The latter modulation stems from near-field effects of the radiation propagating through the grating.

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preprint2006arXiv

Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.

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preprint2003arXiv

Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation

A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields.

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preprint2003arXiv

Spin-sensitive Bleaching and Spin-Relaxation in QW's

Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of circularly polarized radiation is mostly controlled by the spin relaxation time of the holes. The saturation behavior has been investigated for different QW widths and in dependence on the temperature with the result that the saturation intensity substantially decreases with narrowing of QWs. Spin relaxation times were experimentally obtained by making use of calculated (linear) absorption coefficients for inter-subband transitions.

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