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Researcher profile

C. Schüller

C. Schüller contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

10 published item(s)

preprint2022arXiv

Valley-magnetophonon resonance for interlayer excitons

Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magnetophonon resonance for localized interlayer excitons promoted by invervalley hole scattering. It leads to a resonant increase of the photoluminescence polarization degree at the same field of 24.2 Tesla for H-type and R-type stacking configurations despite their vastly different excitonic energy splittings. As a microscopic mechanism of the hole intervalley scattering we identify the scattering with chiral TA phonons of MoSe$_2$ between excitonic states mixed by the long-range electron hole exchange interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the $g$ factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas

We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pumping leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, while low power resonant optical pumping only leads to a resident hole spin polarization if a sufficient in-plane magnetic field is applied. The competition between two different processes of spin orientation strongly modifies the shape of resonant spin amplification traces. Calculations of the spin dynamics in the electron--hole system are in good agreement with the experimental Kerr rotation and resonant spin amplification traces and allow us to determine the hole spin polarization within the sample after optical orientation, as well as to extract quantitative information about spin dephasing processes at various stages of the evolution.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Low-temperature photoluminescence of oxide-covered single-layer MoS2

We present a photoluminescence study of single-layer MoS2 flakes on SiO2 surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS2, which varies by up to 25 meV between individual as-prepared flakes, can be homogenized by annealing in vacuum, which removes adsorbates from the surface. We use HfO2 and Al2O3 layers prepared by atomic layer deposition to cover some of our flakes. We clearly observe a suppression of the low-energy luminescence peak observed for as-prepared flakes at low temperatures, indicating that this peak originates from excitons bound to surface adsorbates. We also observe different temperature-induced shifts of the luminescence peaks for the oxide-covered flakes. This effect stems from the different thermal expansion coefficients of the oxide layers and the MoS2 flakes. It indicates that the single-layer MoS2 flakes strongly adhere to the oxide layers and are therefore strained.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Low-temperature photocarrier dynamics in monolayer MoS2

The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems

We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Cyclotron effect on coherent spin precession of two-dimensional electrons

We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the $(001)$-grown structures without external magnetic fields, we observe coherent oscillations of the electron spin polarization about the effective spin-orbit field. In non-quantizing magnetic fields applied normal to the sample plane, the cyclotron motion of the electrons rotates the effective spin-orbit field. This rotation leads to fast oscillations in the spin polarization about a non-zero value and a strong increase in the spin dephasing time in our experiments. These two effects are absent in the $(110)$-grown structure due to the different symmetry of its effective spin-orbit field. The measurements are in excellent agreement with our theoretical model.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^\ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^\ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with {\em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.

0 citations0 reviewsNo code linkedOpen access