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Researcher profile

Akira Yoshikawa

Akira Yoshikawa contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.ins-det

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Published work

4 published item(s)

preprint2019arXiv

High-light-yield calcium iodide (CaI2) scintillator for astroparticle physics

A high light yield calcium iodide (CaI2) scintillator is being developed for an astroparticle physics experiments. This paper reports scintillation performance of calcium iodide (CaI2) crystal. Large light emission of 2.7 times that of NaI(Tl) and an emission wavelength in good agreement with the sensitive wavelength of the photomultiplier were obtained. A study of pulse shape discrimination using alpha and gamma sources was also performed. We confirmed that CaI2 has excellent pulse shape discrimination potential with a quick analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2

Electric field modulation analysis of thermopower (S) - carrier concentration (n) relation of a bilayer laminate structure composed of a 1.5-nm thick conducting layer, probably TinO2n-1 (n=2, 3,...) Magnéli phase, and rutile TiO2 was performed. The results clearly showed that both the rutile TiO2 and the thin interfacial layer contribute to carrier transport: the rutile TiO2 bulk region (mobility mu~0.03 cm2V-1s-1) and the 1.5-nm thick interfacial layer (mu~0.3 cm2V-1s-1). The effective thickness of the interfacial layer, which was obtained from the S-n relation, was below ~ 3 nm, which agrees well with that of the TEM observation (~1.5 nm), clearly showing that electric field modulation measurement of S-n relation can effectively clarify the carrier transport properties of a bilayer laminate structure.

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preprint2010arXiv

Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 μV/K, which is an order magnitude smaller than that of semiconductors (-198 μV/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

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preprint2009arXiv

A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

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