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Yuichi Ikuhara

Yuichi Ikuhara appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.str-el

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Published work

16 published item(s)

preprint2023arXiv

Direct imaging of local atomic structures in zeolite using novel low-dose scanning transmission electron microscopy

Zeolites have been used in industrial applications such as catalysts, ion exchangers, and molecular sieves because of their unique porous atomic structures. However, the direct observation of zeolitic local atomic structures via electron microscopy is difficult owing to their low resistance to electron irradiation. Subsequently, the fundamental relationships between these structures and their properties remain unclear. A novel low-electron-dose imaging technique, optimum bright-field scanning transmission electron microscopy (OBF STEM) has recently been developed. It reconstructs images with a high signal-to-noise ratio and a dose efficiency approximately two orders of magnitude higher than that of conventional methods. Herein, we performed low-dose atomic-resolution OBF STEM observations of an FAU-type zeolite, effectively visualizing all the atomic sites in its framework. Additionally, the complex local atomic structure of the twin boundaries in the zeolite was directly characterized. The results of this study facilitate the characterization of the local atomic structures in many electron-beam-sensitive materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ~3000 S cm-1

La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV), LSSO is considered to be a good candidate as a DUV-transparent electrode. However, the electrical conductivity of LSSO films are below 1000 S cm^-1, most likely due to the low solubility of La ion in the LSSO lattice. Here we report that high electrically conducting (>3000 S cm^-1) LSSO thin films with an energy bandgap of ~4.6 eV can be fabricated by pulsed laser deposition on MgO substrate followed by a simple annealing in vacuum. From the X-ray diffraction and the scanning transmission electron microscopy analyses, we found that lateral grain growth occurred during the annealing, which improved the activation rate of La ion, leading to a significant improvement of carrier concentration (3.26 x 10^20 cm^-3) and Hall mobility (55.8 cm^2 V^-1 s^-1). The present DUV-transparent oxide semiconductor would be useful as a transparent electrode for developing optoelectronic devices, which transmit and/or emit DUV-light.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3

Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) is one of the most promising TOSs because its single crystal exhibits a high electron mobility. However, in the LBSO films, it is very hard to obtain high mobility due to the threading dislocations, which are originated from the lattice mismatch between the film and the substrate. Therefore, many researchers have tried to improve the mobility by inserting a buffer layer. While the buffer layers increased the electron mobilities, this approach leaves much to be desired since it involves a two-step film fabrication process and the enhanced mobility values are still significantly lower than single crystal values. We show herein that the electron mobility of LBSO films can be improved without inserting any buffer layers if the films are grown under highly oxidative ozone (O3) atmospheres. The O3 environments relaxed the LBSO lattice and reduced the formation of Sn2+ states, which are known to suppress the electron mobility in LBSO. The resultant O3-LBSO films showed improved mobility values up to 115 cm2 V-1 s-1, which is among the highest in LBSO films on SrTiO3 substrates and comparable to LBSO films with buffer layers.

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preprint2018arXiv

One-dimensional van der Waals heterostructures

Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophisticated structures layer by layer. However, this concept has been so far limited in two dimensional (2D) materials. Here we show a class of new material where different layers are coaxially (instead of planarly) stacked. As the structure is in one dimensional (1D) form, we name it "1D vdW heterostructures". We demonstrate a 5 nm diameter nanotube consisting of three different materials: an inner conductive carbon nanotube (CNT), a middle insulating hexagonal boron nitride nanotube (BNNT) and an outside semiconducting MoS2 nanotube. As the technique is highly applicable to other materials in the current 2D libraries,4-6 we anticipate our strategy to be a starting point for discovering a class of new semiconducting nanotube materials. A plethora of function-designable 1D heterostructures will appear after the combination of CNTs, BNNTs and semiconducting nanotubes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Mechanical force involved multiple fields switching of both local ferroelectric and magnetic domain in a Bi5Ti3FeO15 thin film

Multiferroics have received intense attention due to their great application potential in multi-state information storage devices and new types of sensors. Coupling among ferroic orders such as ferroelectricity, (anti-)ferromagnetism, ferroelasticity, etc. will enable dynamic interaction between these ordering parameters. Direct visualization of such coupling behaviour in single phase multiferroic materials is highly desirable for both applications and fundamental study. Manipulation of both ferroelectric and magnetic domains of Bi5Ti3FeO15 thin film using electric field and external mechanical force is reported, which confirms the magnetoelectric coupling in Bi5Ti3FeO15, indicates the electric and magnetic orders are coupled through ferroelasticity. Due to the anisotropic relaxation of ferroelastic strain, the back-switching of out-of-plane electric domains is not as obvious as in-plane. An inevitable destabilization of the coupling between elastic and magnetic ordering happens because of the elastic strain relaxation, which result in a subsequent decay of magnetic domain switching. Mechanical force applied on the surface of Bi5Ti3FeO15 film generates by an AFM tip will effectively drive a transition of the local ferroelastic strain state, reverse both the polarization and magnetization in a way similar to an electric field. Current work provides a framework for exploring cross-coupling among multiple orders and potential for developing novel nanoscale functional devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Discovery of New Layered Iron Arsenide Superconductor (Ca,Pr)FeAs2

A new iron-based superconductor (Ca,Pr)FeAs2 was discovered. Plate-like crystals of the new phase were obtained and crystal structure was investigated by single-crystal X-ray diffraction analysis. The structure was identified as the monoclinic system with space group P21/m, and is composed of two Ca(Pr) planes, anti-fluorite Fe2As2 layers, and As2 zigzag chain layers. Plate-like crystals composed of the new phase showed superconductivity with Tc ~20 K in both magnetization and resistivity measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like (Ga,Mn)As. Recent two studies on the control of ferromagnetism in anatase (Ti,Co)O2 at room temperature via electric field effect [Y. Yamada et al., Science 332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett. 99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase (Ti,Co)O2 and discuss the carrier mediated ferromagnetism.

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preprint2012arXiv

A New Iron Pnictide Oxide (Fe2As2)(Ca5(Mg,Ti)4Oy) and a New Phase in Fe-As-Ca-Mg-Ti-O system

A new layered iron arsenide oxide (Fe2As2)(Ca5(Mg,Ti)4Oy) and its structural derivative were found in the Fe-As-Ca-Mg-Ti-O system. The crystal structure of (Fe2As2)(Ca5(Mg,Ti)4Oy) is identical to that of (Fe2As2)(Ca5(Sc,Ti)4Oy), which was reported in our previous study. The lattice constants of this compound are a = 3.86(4) A and c = 41.05(2) A. In addition, another phase with a thicker blocking layer was found. The structure of the compound and its derivative was tentatively assigned through STEM observation as (Fe2As2)(Ca8(Mg,Ti)6Oy) with sextuple perovskite-type sheets divided by a rock salt layer. The interlayer Fe-Fe distance of this compound is ~30 A. The compound and its derivative exhibited bulk superconductivity, as found from magnetization and resistivity measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2

Electric field modulation analysis of thermopower (S) - carrier concentration (n) relation of a bilayer laminate structure composed of a 1.5-nm thick conducting layer, probably TinO2n-1 (n=2, 3,...) Magnéli phase, and rutile TiO2 was performed. The results clearly showed that both the rutile TiO2 and the thin interfacial layer contribute to carrier transport: the rutile TiO2 bulk region (mobility mu~0.03 cm2V-1s-1) and the 1.5-nm thick interfacial layer (mu~0.3 cm2V-1s-1). The effective thickness of the interfacial layer, which was obtained from the S-n relation, was below ~ 3 nm, which agrees well with that of the TEM observation (~1.5 nm), clearly showing that electric field modulation measurement of S-n relation can effectively clarify the carrier transport properties of a bilayer laminate structure.

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preprint2011arXiv

Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas

Two-dimensionally confined electrons showing unusually large thermopower (S) have attracted attention as a potential approach for developing high performance thermoelectric materials. However, enhanced S has never been observed in electric field induced two-dimensional electron gas (2DEG). Here we demonstrate electric field modulation of S for a field effect transistor (FET) fabricated on a SrTiO3 crystal using a water-infiltrated nanoporous glass as the gate insulator. An electric field application confined carrier electrons up to ~2E15 /cm^2 in an extremely thin (~2 nm) 2DEG. Unusually large enhancement of |S| was observed when the sheet carrier concentration exceeded 2.5E14 /cm^2, and it modulated from ~600 (~2E15 /cm^2) to ~950 μV/K (~8E14 /cm^2), which were approximately five times larger than those of the bulk, clearly demonstrating that an electric field induced 2DEG provides unusually large enhancement of |S|.

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preprint2010arXiv

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

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preprint2010arXiv

Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 μV/K, which is an order magnitude smaller than that of semiconductors (-198 μV/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

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preprint2010arXiv

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Here we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from an insulator to metal. We fabricated the field effect transistor structure on an oxide semiconductor, SrTiO3, using 100%-water-infiltrated nanoporous glass - amorphous 12CaO*7Al2O3 - as the gate insulator. For positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO3 surface at room temperature, leading to the formation of a thin (~3 nm) metal layer with an extremely high electron concentration of 10^15-10^16 cm^-2, which exhibits exotic thermoelectric behaviour.

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preprint2010arXiv

First Homologous Series of Iron Pnictide Oxide Superconductors (Fe2As2)(Can+1(Sc,Ti)nOy) [n = 3,4,5] with Extremely Thick Blocking Layers

We have discovered first homologous series of iron pnictide oxide superconductors (Fe2As2)(Can+1(Sc,Ti)nOy) [n = 3,4,5]. These compounds have extremely thick blocking layers up to quintuple perovskite oxide layers sandwiched by the Fe2As2 layers. These samples exhibited bulk superconductivity with relatively high Tc up to 42 K. The relationship between Tc and the iron-plane interlayer distance suggested that superconductivity due to the mono Fe2As2 layer is substantially 40 K-class.

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preprint2010arXiv

Second Homologous Series of Iron Pnictide Oxide Superconductors (Fe2As2)(Can+2(Al,Ti)nOy)[n = 2,3,4]

We have discovered a new homologous series of iron pnictide oxides (Fe2As2)(Can+2(Al,Ti)nOy)[n = 2,3,4]. These compounds have perovskite-like blocking layers between Fe2As2 layers. The structure of new compounds are tetragonal with space groups of P4/nmm for n = 2 and 4 and P4mm for n = 3, which are similar to those of (Fe2As2)(Can+1(Sc,Ti)nOy)[n = 3,4,5] found in our previous study. Compounds with n = 3 and 4 have new crystal structures with 3 and 4 sheets of perovskite layers, respectively, including a rock salt layer in each blocking layer. The a-axis lengths of the three compounds are approximately 3.8 A, which are close to those of FeSe and LiFeAs. (Fe2As2)(Ca6(Al,Ti)4Oy) exhibited bulk superconductivity in magnetization measurement with Tc(onset)~36 K and resistivity drop was observed at ~39 K. (Fe2As2)(Ca5(Al,Ti)3Oy) also showed large diamagnetism at low temperatures. These new compounds indicate considerable rooms are still remaining for new superconductors in layered iron pnictides.

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preprint2009arXiv

A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

0 citations0 reviewsNo code linkedOpen access