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Takeharu Kato

Takeharu Kato contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2026arXiv

Higher critical currents yet faster vortex creep in EuBa$_2$Cu$_3$O$_y$ films containing coherent artificial pinning centers

The electromagnetic properties of type-II superconductors depend on vortices -- magnetic flux lines whose motion introduces dissipation that can be mitigated by pinning from material defects. The material disorder landscape is tuned by the choice of materials growth technique and incorporation of impurities that serve as vortex pinning centers. For example, metal organic deposition (MOD) and pulsed laser deposition (PLD) produce high-quality superconducting films with uncorrelated versus correlated disorder, respectively. Here, we study vortex dynamics in PLD-grown EuBa$_2$Cu$_3$O$_y$ films containing varying concentrations of BaHfO$_3$ inclusions and compare our results with those of MOD-grown (Y,Gd)Ba$_2$Cu$_3$O$_y$ films. Despite both systems exhibiting behavior consistent with strong pinning theory, which predicts the critical current density $J_c$ based on vortex trapping by randomly distributed spherical inclusions, we find striking differences in the vortex dynamics owing to the correlated versus uncorrelated disorder. Specifically, we find that the EuBa$_2$Cu$_3$O$_y$ films grown without inclusions exhibit surprisingly slow vortex creep, comparable to the slowest creep rates achieved in (Y,Gd)Ba$_2$Cu$_3$O$_y$ films containing high concentrations of BaHfO$_3$. Whereas adding inclusions to (Y,Gd)Ba$_2$Cu$_3$O$_y$ is effective in slowing creep, BaHfO$_3$ increases creep in EuBa$_2$Cu$_3$O$_y$ even while concomitantly improving $J_c$. Lastly, we find evidence of variable range hopping and that $J_c$ is maximized at the BaHfO$_3$ concentration that hosts creep of large vortex bundles or a Bose glass state.

preprint2011arXiv

Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2

Electric field modulation analysis of thermopower (S) - carrier concentration (n) relation of a bilayer laminate structure composed of a 1.5-nm thick conducting layer, probably TinO2n-1 (n=2, 3,...) Magnéli phase, and rutile TiO2 was performed. The results clearly showed that both the rutile TiO2 and the thin interfacial layer contribute to carrier transport: the rutile TiO2 bulk region (mobility mu~0.03 cm2V-1s-1) and the 1.5-nm thick interfacial layer (mu~0.3 cm2V-1s-1). The effective thickness of the interfacial layer, which was obtained from the S-n relation, was below ~ 3 nm, which agrees well with that of the TEM observation (~1.5 nm), clearly showing that electric field modulation measurement of S-n relation can effectively clarify the carrier transport properties of a bilayer laminate structure.

preprint2011arXiv

Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas

Two-dimensionally confined electrons showing unusually large thermopower (S) have attracted attention as a potential approach for developing high performance thermoelectric materials. However, enhanced S has never been observed in electric field induced two-dimensional electron gas (2DEG). Here we demonstrate electric field modulation of S for a field effect transistor (FET) fabricated on a SrTiO3 crystal using a water-infiltrated nanoporous glass as the gate insulator. An electric field application confined carrier electrons up to ~2E15 /cm^2 in an extremely thin (~2 nm) 2DEG. Unusually large enhancement of |S| was observed when the sheet carrier concentration exceeded 2.5E14 /cm^2, and it modulated from ~600 (~2E15 /cm^2) to ~950 μV/K (~8E14 /cm^2), which were approximately five times larger than those of the bulk, clearly demonstrating that an electric field induced 2DEG provides unusually large enhancement of |S|.

preprint2010arXiv

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

preprint2010arXiv

Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 μV/K, which is an order magnitude smaller than that of semiconductors (-198 μV/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

preprint2010arXiv

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Here we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from an insulator to metal. We fabricated the field effect transistor structure on an oxide semiconductor, SrTiO3, using 100%-water-infiltrated nanoporous glass - amorphous 12CaO*7Al2O3 - as the gate insulator. For positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO3 surface at room temperature, leading to the formation of a thin (~3 nm) metal layer with an extremely high electron concentration of 10^15-10^16 cm^-2, which exhibits exotic thermoelectric behaviour.

preprint2009arXiv

A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.