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Researcher profile

Kunihito Koumoto

Kunihito Koumoto contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2011arXiv

Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2

Electric field modulation analysis of thermopower (S) - carrier concentration (n) relation of a bilayer laminate structure composed of a 1.5-nm thick conducting layer, probably TinO2n-1 (n=2, 3,...) Magnéli phase, and rutile TiO2 was performed. The results clearly showed that both the rutile TiO2 and the thin interfacial layer contribute to carrier transport: the rutile TiO2 bulk region (mobility mu~0.03 cm2V-1s-1) and the 1.5-nm thick interfacial layer (mu~0.3 cm2V-1s-1). The effective thickness of the interfacial layer, which was obtained from the S-n relation, was below ~ 3 nm, which agrees well with that of the TEM observation (~1.5 nm), clearly showing that electric field modulation measurement of S-n relation can effectively clarify the carrier transport properties of a bilayer laminate structure.

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preprint2010arXiv

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

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preprint2010arXiv

Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 μV/K, which is an order magnitude smaller than that of semiconductors (-198 μV/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

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preprint2009arXiv

A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

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