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Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 μV/K, which is an order magnitude smaller than that of semiconductors (-198 μV/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

preprint2010arXivOpen access
Yuki NagaoAkira YoshikawaKunihito KoumotoTakeharu KatoYuichi IkuharaHiromichi Ohta
cond-mat.mtrl-sci
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Yuki NagaoAkira YoshikawaKunihito KoumotoTakeharu KatoYuichi IkuharaHiromichi Ohta

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